Novel Method for Reclaim/Reuse of Bulk GaN Substrates using Sacrifical ZnO Release Layers
Proc. SPIE 8987, Oxide-based Materials and Devices V, 898719
April 2, 2014  [visit journal]  [reprint]

Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy
Adv. Funct. Mater. 2014
April 1, 2014  [visit journal]  [reprint]

Erdem Cicek Wins Award for Breakthrough in Human-Oriented Applications
SPIE Photonics West 2014 Conference
February 4, 2014   [read article]

Francois Callewaert Wins Award for Breakthrough in Human-Oriented Applications
SPIE Photonics West 2014 Conference
February 4, 2014   [read article]

Invited Speaker,
3rd Annual Conference and Expo of AnalytiX 2014
Dalian, China
April 25, 2014   [conference link]

Keynote Speaker "A Review on Antimonide-based Semiconductors for High-Performance Optoelectronic Devices in Center for Quantum Devices"
SPIE DSS 2014 - Image Sensing Technologies: Materials, Devices, Systems, and Applications Conference
Baltimore, MD.
May 5, 2014   [conference link]

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Proffessor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalance diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devvices, and our research can be found on the CQD's YouTube Channel.

99 Times: AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
            Appl. Phys. Lett. 103, 191108 (2013) November 5, 2013  [visit journal]  [reprint]

76 Times: Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice
            Applied Physics Letters, 104, 053508 (2014) February 6, 2014  [visit journal]  [reprint]

66 Times: Extended electrical tuning of quantum cascade lasers with digital concatenated gratings
            Appl. Phys. Lett. 103, 231110 (2013) December 6, 2013  [visit journal]  [reprint]

43 Times: Room temperature terahertz quantum cascade laser sources with 215 μW output power through epilayer-down mounting
            Appl. Phys. Lett. 103, 011101 (2013) July 1, 2013  [visit journal]  [reprint]

41 Times: Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array
            Appl. Phys. Lett. 103, 223501 (2013) November 25, 2013  [visit journal]  [reprint]

40 Times: AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
            Appl. Phys. Lett. 103, 181113 (2013) October 30, 2013  [visit journal]  [reprint]

39 Times: Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
            Infrared Physics & Technology, Volume 59, Pages 41-52 (2013) July 1, 2013  [visit journal]  [reprint]

35 Times: High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation
            Optics Express, Vol. 21, No. 1, p. 968 January 14, 2013  [visit journal]  [reprint]

28 Times: Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement
            Applied Physics Letters 103, 033512 (2013) July 17, 2013  [visit journal]  [reprint]

Last Updated 3/6/2014

Northwestern University