Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
Applied Physics Letters 106 , 011104 (2015)
January 8, 2015  [visit journal]  [reprint]

Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
Optics Letters Vol. 40, Iss. 1, pp. 29–32 (2015)
December 18, 2014  [visit journal]  [reprint]

New Infrared Photodetectors Improve Medical Screening
McCormick Press Release
January 29, 2015   [read article]

Infrared Imaging Technique Operates at High Temperatures
McCormick Press Release
January 23, 2015   [read article]

Symposium Chair, "Nanotechnologies in Photonics"
SPIE 2015 Photonics West Conference
San Francisco, CA.
February 7, 2015   [conference link]

Conference Chair, "Quantum Sensing and Nanophotonic Devices XII"
SPIE 2015 Photonics West Conference
San Francisco, CA.
February 7, 2015   [conference link]

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Professor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalanche diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devices, and our research can be found on the CQD's YouTube Channel.

217 Times: Advances in mid-infrared detection and imaging: a key issues review
            Rep. Prog. Phys. 77 (2014) 082401 August 4, 2014  [visit journal]  [reprint]

149 Times: Widely tunable room temperature semiconductor terahertz source
            Appl. Phys. Lett. 105, 201102 (2014) November 17, 2014  [visit journal]  [reprint]

95 Times: InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
            Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014  [visit journal]  [reprint]

76 Times: Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
            Optics Letters Vol. 40, Iss. 1, pp. 29–32 (2015) December 18, 2014  [visit journal]  [reprint]

74 Times: Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems
            Journal of ELECTRONIC MATERIALS, Vol. 43, No. 8, 2014 August 1, 2014  [visit journal]  [reprint]

59 Times: High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN
            IEEE Journal of Quantum Electronics, Vol. 50, Issue 8, p 591-595 August 1, 2014  [visit journal]  [reprint]

58 Times: Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
            Infrared Physics & Technology, Volume 59, Pages 41-52 (2013) July 1, 2013  [visit journal]  [reprint]

52 Times: Recent advances in mid infrared (3-5 μm) quantum cascade lasers
            Optical Materials Express, Vol. 3, Issue 11, pp. 1872-1884 (2013) November 2, 2013  [visit journal]  [reprint]

50 Times: Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
            Applied Physics Letters 106 , 011104 (2015) January 8, 2015  [visit journal]  [reprint]

Last Updated 3/6/2014

Northwestern University