Ultra-broadband quantum cascade laser, tunable over 760 cm−1, with balanced gain
Opt. Express 23, 21159-21164
August 10, 2015  [visit journal]

Core-shell GaN-ZnO Moth-eye Nanostructure Arrays Grown on a-SiO2/Si (111) as a basis for Improved InGaN-based Photovoltaics and LEDs
Photonics and Nanostructures - Fundamentals and Applications (2015)
March 30, 2015  [visit journal]  [reprint]

Razeghi Gives an Overview of the CQD's Research Activites
University of Illinois-Urbana Champaigine & NSF Nano-Hub
April 2, 2015   [read article]

Tilted Laser Cavities Make Brighter Beams
McCormick Press Release
March 16, 2015   [read article]

Invited Speaker, "Developing Better Light Sources with Band Structure Engineering"
Ashton Year of Light Workshop
Birmingham, UK
October 6, 2015   [conference link]

Invited Speaker "Compact Room Temperature, CW, Monolithic Tunable Terahertz Quantum Cascade Laser Sources"
NATO Tera-Mir Workshop
Izmir, Turkey
November 3, 2015   [conference link]

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Professor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalanche diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devices, and our research can be found on the CQD's YouTube Channel.

128 Times: InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
            Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014  [visit journal]  [reprint]

61 Times: Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
            Applied Physics Letters 106 , 011104 (2015) January 8, 2015  [visit journal]  [reprint]

54 Times: High brightness angled cavity quantum cascade lasers
            Applied Physics Letters 106, 091105 (2015) March 6, 2015  [visit journal]  [reprint]

44 Times: High power frequency comb based on mid-infrared quantum cascade laser at λ ~9μm
            Appl. Phys. Lett. 106, 051105 (2015) February 2, 2015  [visit journal]  [reprint]

38 Times: Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
            Optics Letters Vol. 40, Iss. 1, pp. 29–32 (2015) December 18, 2014  [visit journal]  [reprint]

38 Times: Widely tunable room temperature semiconductor terahertz source
            Appl. Phys. Lett. 105, 201102 (2014) November 17, 2014  [visit journal]  [reprint]

36 Times: Advances in mid-infrared detection and imaging: a key issues review
            Rep. Prog. Phys. 77 (2014) 082401 August 4, 2014  [visit journal]  [reprint]

34 Times: High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
            Appl. Phys. Lett. 104, 251105 (2014) June 23, 2014  [visit journal]  [reprint]

29 Times: Modeling of Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method and Interface Engineering
            Physical Review B, 69 (8) February 15, 2004  [visit journal]  [reprint]

Last Updated 8/15/2015

Northwestern University