High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN
IEEE Journal of Quantum Electronics, Vol. 50, Issue 8, p 591-595
August 1, 2014  [visit journal]  [reprint]

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
Appl. Phys. Lett. 104, 251105 (2014)
June 23, 2014  [visit journal]  [reprint]

New Technology Illuminates Colder Objects in Deep Space
McCormick Press Release
July 8, 2014   [read article]

Team Demonstrates Continuous Terahertz Sources at Room Temperature
McCormick Press Release
June 4, 2014   [read article]

Conference Chair, "Terahertz Emitters, Receivers, and Applications V"
SPIE 2014 - Optics & Photonics
San Diego, CA.
August 17, 2014   [conference link]

Invited Speaker, "RT,CW operation of 3.5 THz laser diode based on DFG-QCL"
SPIE 2014 - Optics & Photonics
San Diego, CA.
August 17, 2014   [conference link]

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Proffessor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalance diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devvices, and our research can be found on the CQD's YouTube Channel.

63 Times: Continuous operation of a monolithic semiconductor terahertz source at room temperature
            Appl. Phys. Lett. 104, 221105 (2014) June 3, 2014  [visit journal]  [reprint]

53 Times: AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
            Appl. Phys. Lett. 103, 191108 (2013) November 5, 2013  [visit journal]  [reprint]

53 Times: High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN
            IEEE Journal of Quantum Electronics, Vol. 50, Issue 8, p 591-595 August 1, 2014  [visit journal]  [reprint]

50 Times: High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
            Appl. Phys. Lett. 104, 251105 (2014) June 23, 2014  [visit journal]  [reprint]

45 Times: Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
            Infrared Physics & Technology, Volume 59, Pages 41-52 (2013) July 1, 2013  [visit journal]  [reprint]

43 Times: Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice
            Applied Physics Letters, 104, 053508 (2014) February 6, 2014  [visit journal]  [reprint]

33 Times: Recent advances in mid infrared (3-5 μm) quantum cascade lasers
            Optical Materials Express, Vol. 3, Issue 11, pp. 1872-1884 (2013) November 2, 2013  [visit journal]  [reprint]

32 Times: Extended electrical tuning of quantum cascade lasers with digital concatenated gratings
            Appl. Phys. Lett. 103, 231110 (2013) December 6, 2013  [visit journal]  [reprint]

23 Times: Novel Method for Reclaim/Reuse of Bulk GaN Substrates using Sacrifical ZnO Release Layers
            Proc. SPIE 8987, Oxide-based Materials and Devices V, 898719 April 2, 2014  [visit journal]  [reprint]

Last Updated 3/6/2014

Northwestern University