Core-shell GaN-ZnO Moth-eye Nanostructure Arrays Grown on a-SiO2/Si (111) as a basis for Improved InGaN-based Photovoltaics and LEDs
Photonics and Nanostructures - Fundamentals and Applications (2015)
March 30, 2015  [visit journal]  [reprint]

Scale-up of the Chemical Lift-off of (In)GaN-based p-i-n Junctions from Sapphire Substrates Using Sacrificial ZnO Template Layers
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 936424
March 24, 2015  [visit journal]  [reprint]

Razeghi Gives an Overview of the CQD's Research Activites
University of Illinois-Urbana Champaigine & NSF Nano-Hub
April 2, 2015   [read article]

Tilted Laser Cavities Make Brighter Beams
McCormick Press Release
March 16, 2015   [read article]

Invited Speaker, "InAs/InAs1-xSbx Type-II Superlattices for High-performance Long-wavelength Infrared Medical Thermography"
ECS Meeting
Chicago, IL.
May 24, 2015   [conference link]

Invited Speaker
EMN (Energy, Materials, and Nanotechnology) Meeting
Cancun, Mexico
June 8, 2015   [conference link]

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Professor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalanche diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devices, and our research can be found on the CQD's YouTube Channel.

159 Times: InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
            Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014  [visit journal]  [reprint]

121 Times: Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
            Applied Physics Letters 106 , 011104 (2015) January 8, 2015  [visit journal]  [reprint]

120 Times: High brightness angled cavity quantum cascade lasers
            Applied Physics Letters 106, 091105 (2015) March 6, 2015  [visit journal]  [reprint]

91 Times: High power frequency comb based on mid-infrared quantum cascade laser at λ ~9μm
            Appl. Phys. Lett. 106, 051105 (2015) February 2, 2015  [visit journal]  [reprint]

78 Times: Widely tunable room temperature semiconductor terahertz source
            Appl. Phys. Lett. 105, 201102 (2014) November 17, 2014  [visit journal]  [reprint]

77 Times: Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
            Optics Letters Vol. 40, Iss. 1, pp. 29–32 (2015) December 18, 2014  [visit journal]  [reprint]

50 Times: Advances in mid-infrared detection and imaging: a key issues review
            Rep. Prog. Phys. 77 (2014) 082401 August 4, 2014  [visit journal]  [reprint]

46 Times: Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems
            Journal of ELECTRONIC MATERIALS, Vol. 43, No. 8, 2014 August 1, 2014  [visit journal]  [reprint]

27 Times: Core-shell GaN-ZnO Moth-eye Nanostructure Arrays Grown on a-SiO2/Si (111) as a basis for Improved InGaN-based Photovoltaics and LEDs
            Photonics and Nanostructures - Fundamentals and Applications (2015) March 30, 2015  [visit journal]  [reprint]

Last Updated 3/6/2014

Northwestern University