Recently Published Papers

High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
SPIE Proceedings, Vol. 8631, p. 86311K-1, Photonics West, San Francisco, CA
February 5, 2013  [visit journal]  [reprint]

Crack-free AlGaN for solar-blind focal plane arrays through reduced area expitaxy
Applied Physics Letters, Vol. 102, No. 05, p. 051102-1
February 4, 2013  [visit journal]  [reprint]

Recent News & Publicity

Stress-reduced solar-blind AlGaN-based FPA is crack-free
Laser Focus World, Vol. 49, No. 4, p. 14
April 30, 2013   [read article]

Imager combines SWIR and MWIR sensitivity
Laser Focus World, Vol. 49, No. 2, p. 24-25
February 27, 2013   [read article]

Views of the Laboratory

Atomic Force Microscope

Digital Instruments, Nanoscope D3100 scanning probe microscope in a vibration isolation enclosure, configured for tapping more AFM.

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Proffessor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalance diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation.

(above) Inauguration of the Center for Quantum Devices on June 6, 1993, in the presence of Dean Jerry Cohen, Provost David Cohen, Director Manijeh Razeghi, Venky Narayanamurti, Richard Shealy, Abraham Haddad, Leo Esaki (Nobel Laureate), Lester Eastman, Klaus von Klitzing (Nobel Laureate), Gail Brown, and Erwan Bigan.