High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
Applied Physics Letters 107 , 141104 (2015)
October 5, 2015  [visit journal]

Ultra-broadband quantum cascade laser, tunable over 760 cm−1, with balanced gain
Opt. Express 23, 21159-21164
August 10, 2015  [visit journal]

David Heydari Wins 1st Place at 2015 NDConnect Poster Session
Notre Dame Press Release
October 23, 2015   [read article]

Razeghi Gives an Overview of the CQD's Research Activites
University of Illinois-Urbana Champaigine & NSF Nano-Hub
April 2, 2015   [read article]

Plenary Speaker, "Optoelectronics for any Occasion with Modern Band Structure Engineering"
Workshop on Multifunctional Nanomaterials and Workshop on Frontier in Electronics
San Juan, PR
December 16, 2015   [conference link]

Invited Speaker, "Quantum Science and Technology: Applications for Daily Life"
University of Maryland
Baltimore, MD.
January 29, 2016

CQD Director Proff. Razeghi

Since its founding in 1991, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

The Center for Quantum Devices has put together a comprehensive facility for solid state research. This Includes semiconductor thin film epitaxial growth, material characterization, material processing and device fabrication, thin film deposition, and device packaging and measurement. The facility occupies a total of 8,000 square feet of laboratory and office space. 3,000 square feet of this total are clean room space in Cook Hall, specifically designed by Professor Razeghi.

The Center for Quantum Devices has established a proven research track record covering areas such as: high-power quantum cascade lasers, type-II superlattice infrared photodetectors, quantum dot photodetectors, UV and visible lasers, LEDs, photodetectors, and avalanche diodes, quantum well infrared photodetectors, uncooled InAsSb photodetectors, InTlAsBiSb detector technology, aluminum-free high power lasers, and antimony based 3 to 5 μm lasers.

For a comprehensive overview of the Center for Quantum Devices and the work currently being conducted here please see this 60 minute video presentation. Additional video related to Professor Manijeh Razeghi, the Center for Quantum Devices, and our research can be found on the CQD's YouTube Channel.

89 Times: InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
            Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014  [visit journal]  [reprint]

66 Times: High brightness angled cavity quantum cascade lasers
            Applied Physics Letters 106, 091105 (2015) March 6, 2015  [visit journal]  [reprint]

45 Times: Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
            Applied Physics Letters 106 , 011104 (2015) January 8, 2015  [visit journal]  [reprint]

41 Times: High power frequency comb based on mid-infrared quantum cascade laser at λ ~9μm
            Appl. Phys. Lett. 106, 051105 (2015) February 2, 2015  [visit journal]  [reprint]

37 Times: Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application
            Optics Letters Vol. 40, Iss. 1, pp. 29–32 (2015) December 18, 2014  [visit journal]  [reprint]

34 Times: Advances in mid-infrared detection and imaging: a key issues review
            Rep. Prog. Phys. 77 (2014) 082401 August 4, 2014  [visit journal]  [reprint]

28 Times: Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
            Appl. Phys. Lett. 102, 211110 (2013) May 31, 2013  [visit journal]  [reprint]

26 Times: High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
            Appl. Phys. Lett. 104, 251105 (2014) June 23, 2014  [visit journal]  [reprint]

23 Times: Widely tunable room temperature semiconductor terahertz source
            Appl. Phys. Lett. 105, 201102 (2014) November 17, 2014  [visit journal]  [reprint]

Last Updated 8/15/2015

Northwestern University