Advanced Design Techniques for Si LDMOS RFIC Operation beyond 2GHz

Si LDMOS has been the dominant transistor technology in cellular base-station power amplifiers for the past 15 years due to its low cost and excellent RF performance. The emerging fourth generation (4G) cellular standard has extended the operating frequencies beyond 2.2 GHz thereby pushing the Si LDMOS technology to its usable limits. The 4G system architecture has shifted to multiple independent transmitters in a single basestation to utilize the multiple antenna technology. The need for high frequency, power, and gain density devices will increase the demand for Si LDMOS RFIC devices that satisfies the requirements for 4G power amplifiers.

Our research focuses on the development of the industry’s first high power Si LDMOS RFIC at 2.7 GHz into production for commercial use and maximizing the Si LDMOS RF performance above 2GHz through flexible design architecture, computer design methodology, improved transistor models, and new higher quality factor passive component (inductors, capacitors, etc…) structures.

Last Updated 1/08/2013