Center for Quantum Devices - Patents and Patent Applications

Patents and Patent Applications

1.	Wide Bandgap Nitride/ Oxide Heterostructure Engineering for Next Generation Power Electronics US Patent Pending filed January 25, 2024
2.	Fundamental Study of p-Type Doping in MOCVD-Grown Ga2O3 US Patent Pending filed January 25, 2024
3.	MAGNETIC MEMORY DEVICE USING DOPED SEMICONDUCTOR LAYER US patent number 17426508 Granted July 28, 2021
4.	AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP Ill-VI SEMICONDUCTORS WITH GROUP-IV ATOMS US Patent Pending filed June 10, 2020
5.	Monolithical Widely Tunable Quantum Cascade Laser Devices US Patent Pending filed December 1, 2015
6.	Superlattice Photodiodes with Polymide Surface Passivation US patent number 7682865 Granted March 23, 2010
7.	InAs/GaSb infrared superlattice photodiodes doped with Beryllium US patent number 7638791 Granted December 29, 2009
8.	Polarity inversion of type-II InAs/GaSb superlattice photodiodes US patent number 7692183 Granted April 6, 2008
9.	Focal Plane Arrays in Type-II Superlattices US patent number 7001794 Granted February 21, 2006
10.	Focal Plane Arrays in Type-II Superlattices US patent number 6864552 Granted March 8, 2005
11.	Multi Color Detector US patent number 6750075 Granted June 15, 2004
12.	III-Nitride Optoelectronic Devices US patent number 6605485 Granted August 12, 2003
13.	High Power IR Semiconductor Laser US patent number 6577659 Granted June 10, 2003
14.	III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices US patent number 6570179 Granted May 27, 2003
15.	Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002
16.	Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002
17.	Diode Laser US patent number 6461884 Granted October 8, 2002
18.	Multi Quantum Well Grinsch Detector US patent number 6459096 Granted October 1, 2002
19.	Multi Color Detector US patent number 6452242 Granted September 17, 2002
20.	Multi-Spectral Quantum Well Infrared Photodetectors US patent number 6420728 Granted July 16, 2002
21.	Quantum Dots for Optoelectronic Devices US patent number 6329668 Granted December 11, 2001
22.	Fabrication of Defect Free III-Nitride Materials US patent number 6271104 Granted August 7, 2001
23.	Long Wavelength DH, SCH, and MQW Lasers Based on Sb US patent number 6108360 Granted August 22, 2000
24.	Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi Long Wavelength Infrared Photodetectors US patent number 6054706 Granted April 15, 2000
25.	Aluminum-free 980 nm Laser Pump US Patent Pending filed November 30, 1999
26.	III-Nitride Based Emitting Devices US patent number 5834331 Granted November 10, 1998
27.	Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors US patent number 5834331 Granted November 10, 1998
28.	III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices US patent number 5831277 Granted November 3, 1998
29.	Processing of Sb-based Lasers US patent number 5807765 Granted September 15, 1998
30.	Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm US patent number 5726078 Granted March 10, 1998
31.	Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer in Order to Decrease Dark Current of PD US patent number 5668395 Granted September 16, 1997
32.	Buried-Ridge Laser Device US patent number 5663976 Granted September 2, 1997
33.	InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes US patent number 5658825 Granted August 19, 1997
34.	Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage Sensitivity of a Photovoltaic Devices US patent number 5650635 Granted July 22, 1997
35.	Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber US patent number 5599732 Granted February 4, 1997
36.	Semiconductor Films US patent number 5462008 Granted October 31, 1995
37.	Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same US patent number 5421910 Granted June 6, 1995
38.	New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2 μm up to 9 μm US patent number 5410178 Granted April 25, 1995
39.	Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates US patent number 5389396 Granted February 14, 1995
40.	LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High Power Laser US patent number 5384151 Granted January 24, 1995
41.	Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays US Patent Pending
42.	High Power Mid Wavelength Infrared Laser US Patent Pending
43.	Ohmic Contacts for Semiconductor Devices US Patent Pending
44.	1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD US Patent Pending
45.	Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire Substrates US Patent Pending
46.	Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire Substrates US Patent Pending
47.	SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr. Tobin Marks, NU Chemistry) US Patent Pending
48.	Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2 Atmosphere US Patent Pending
49.	Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors US Patent Pending
50.	Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers US Patent Pending
51.	Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm US Patent Pending
52.	Selective Epitaxy for Quantum Devices US Patent Pending
53.	Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature US Patent Pending
54.	InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays US Patent Pending
55.	Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices US Patent Pending
56.	Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers US Patent Pending
57.	Quantum Dots Infrared Photodetector Material and Structure US Patent Pending
58.	Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs) US Patent Pending
59.	InAsSb Two-Color Detector Technology US Patent Pending
60.	High Power Infrared Lasers US Patent Pending
61.	High Power Infrared Semiconductor Laser US Patent Pending
62.	Heterogeneous Integration of Optoelectronic Devices US Patent Pending
63.	Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices US Patent Pending
64.	Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices US Patent Pending
65.	Highly conductive codoped Ga2O3:Si-In grown by MOCVD US Patent Pending