1.  Monolithical Widely Tunable Quantum Cascade Laser Devices
US Patent Pending
filed December 1, 2015
 
2.  InAs/GaSb infrared superlattice photodiodes doped with Beryllium
US patent number 7638791
Granted December 29, 2009
 
3.  Focal Plane Arrays in Type-II Superlattices
US patent number 7001794
Granted February 21, 2006
 
4.  Focal Plane Arrays in Type-II Superlattices
US patent number 6864552
Granted March 8, 2005
 
5.  Multi Color Detector
US patent number 6750075
Granted June 15, 2004
 
6.  III-Nitride Optoelectronic Devices
US patent number 6605485
Granted August 12, 2003
 
7.  High Power IR Semiconductor Laser
US patent number 6577659
Granted June 10, 2003
 
8.  III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices
US patent number 6570179
Granted May 27, 2003
 
9.  Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs)
US patent number 6480520
Granted November 12, 2002
 
10.  Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs)
US patent number 6480520
Granted November 12, 2002
 
11.  Diode Laser
US patent number 6461884
Granted October 8, 2002
 
12.  Multi Quantum Well Grinsch Detector
US patent number 6459096
Granted October 1, 2002
 
13.  Multi Color Detector
US patent number 6452242
Granted September 17, 2002
 
14.  Multi-Spectral Quantum Well Infrared Photodetectors
US patent number 6420728
Granted July 16, 2002
 
15.  Quantum Dots for Optoelectronic Devices
US patent number 6329668
Granted December 11, 2001
 
16.  Fabrication of Defect Free III-Nitride Materials
US patent number 6271104
Granted August 7, 2001
 
17.  Long Wavelength DH, SCH, and MQW Lasers Based on Sb
US patent number 6108360
Granted August 22, 2000
 
18.  Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi Long Wavelength Infrared Photodetectors
US patent number 6054706
Granted April 15, 2000
 
19.  Aluminum-free 980 nm Laser Pump
US Patent Pending
filed November 30, 1999
 
20.  III-Nitride Based Emitting Devices
US patent number 5834331
Granted November 10, 1998
 
21.  Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors
US patent number 5834331
Granted November 10, 1998
 
22.  III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices
US patent number 5831277
Granted November 3, 1998
 
23.  Processing of Sb-based Lasers
US patent number 5807765
Granted September 15, 1998
 
24.  Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm
US patent number 5726078
Granted March 10, 1998
 
25.  Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer in Order to Decrease Dark Current of PD
US patent number 5668395
Granted September 16, 1997
 
26.  Buried-Ridge Laser Device
US patent number 5663976
Granted September 2, 1997
 
27.  InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes
US patent number 5658825
Granted August 19, 1997
 
28.  Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage Sensitivity of a Photovoltaic Devices
US patent number 5650635
Granted July 22, 1997
 
29.  Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber
US patent number 5599732
Granted February 4, 1997
 
30.  Semiconductor Films
US patent number 5462008
Granted October 31, 1995
 
31.  Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same
US patent number 5421910
Granted June 6, 1995
 
32.  New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2 μm up to 9 μm
US patent number 5410178
Granted April 25, 1995
 
33.  Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates
US patent number 5389396
Granted February 14, 1995
 
34.  LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High Power Laser
US patent number 5384151
Granted January 24, 1995
 
35.  Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays
US Patent Pending
 
36.  High Power Mid Wavelength Infrared Laser
US Patent Pending
 
37.  Ohmic Contacts for Semiconductor Devices
US Patent Pending
 
38.  1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD
US Patent Pending
 
39.  Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire Substrates
US Patent Pending
 
40.  Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire Substrates
US Patent Pending
 
41.  SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr. Tobin Marks, NU Chemistry)
US Patent Pending
 
42.  Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2 Atmosphere
US Patent Pending
 
43.  Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors
US Patent Pending
 
44.  Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers
US Patent Pending
 
45.  Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm
US Patent Pending
 
46.  Selective Epitaxy for Quantum Devices
US Patent Pending
 
47.  Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature
US Patent Pending
 
48.  InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays
US Patent Pending
 
49.  Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices
US Patent Pending
 
50.  Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers
US Patent Pending
 
51.  Quantum Dots Infrared Photodetector Material and Structure
US Patent Pending
 
52.  Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs)
US Patent Pending
 
53.  InAsSb Two-Color Detector Technology
US Patent Pending
 
54.  High Power Infrared Lasers
US Patent Pending
 
55.  High Power Infrared Semiconductor Laser
US Patent Pending
 
56.  Heterogeneous Integration of Optoelectronic Devices
US Patent Pending
 
57.  Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices
US Patent Pending
 
58.  Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices
US Patent Pending