Center for Quantum Devices - Patents and Patent Applications

Patents and Patent Applications

1.	Methods of Fabricating Planar Infrared Photodetectors US patent number 12080823 Granted September 4, 2024
2.	Wide Bandgap Nitride/ Oxide Heterostructure Engineering for Next Generation Power Electronics US Patent Pending filed January 25, 2024
3.	Fundamental Study of p-Type Doping in MOCVD-Grown Ga2O3 US Patent Pending filed January 25, 2024
4.	Amphoteric p-type and n-type doping of group III-VI semiconductors with group-IV atoms US patent number 11417523 Granted January 1, 2022
5.	MAGNETIC MEMORY DEVICE USING DOPED SEMICONDUCTOR LAYER US patent number 17426508 Granted July 28, 2021
6.	AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP Ill-VI SEMICONDUCTORS WITH GROUP-IV ATOMS US Patent Pending filed June 10, 2020
7.	Monolithical Widely Tunable Quantum Cascade Laser Devices US patent number 9917418 Granted December 1, 2018
8.	Superlattice Photodiodes with Polymide Surface Passivation US patent number 7682865 Granted March 23, 2010
9.	InAs/GaSb infrared superlattice photodiodes doped with Beryllium US patent number 7638791 Granted December 29, 2009
10.	Polarity inversion of type-II InAs/GaSb superlattice photodiodes US patent number 7692183 Granted April 6, 2008
11.	Focal Plane Arrays in Type-II Superlattices US patent number 7001794 Granted February 21, 2006
12.	Focal Plane Arrays in Type-II Superlattices US patent number 6864552 Granted March 8, 2005
13.	Multi Color Detector US patent number 6750075 Granted June 15, 2004
14.	III-Nitride Optoelectronic Devices US patent number 6605485 Granted August 12, 2003
15.	High Power IR Semiconductor Laser US patent number 6577659 Granted June 10, 2003
16.	III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices US patent number 6570179 Granted May 27, 2003
17.	Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002
18.	Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002
19.	Diode Laser US patent number 6461884 Granted October 8, 2002
20.	Multi Quantum Well Grinsch Detector US patent number 6459096 Granted October 1, 2002
21.	Multi Color Detector US patent number 6452242 Granted September 17, 2002
22.	Multi-Spectral Quantum Well Infrared Photodetectors US patent number 6420728 Granted July 16, 2002
23.	Quantum Dots for Optoelectronic Devices US patent number 6329668 Granted December 11, 2001
24.	Fabrication of Defect Free III-Nitride Materials US patent number 6271104 Granted August 7, 2001
25.	Long Wavelength DH, SCH, and MQW Lasers Based on Sb US patent number 6108360 Granted August 22, 2000
26.	Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi Long Wavelength Infrared Photodetectors US patent number 6054706 Granted April 15, 2000
27.	Aluminum-free 980 nm Laser Pump US Patent Pending filed November 30, 1999
28.	III-Nitride Based Emitting Devices US patent number 5834331 Granted November 10, 1998
29.	Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors US patent number 5834331 Granted November 10, 1998
30.	III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices US patent number 5831277 Granted November 3, 1998
31.	Processing of Sb-based Lasers US patent number 5807765 Granted September 15, 1998
32.	Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm US patent number 5726078 Granted March 10, 1998
33.	Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer in Order to Decrease Dark Current of PD US patent number 5668395 Granted September 16, 1997
34.	Buried-Ridge Laser Device US patent number 5663976 Granted September 2, 1997
35.	InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes US patent number 5658825 Granted August 19, 1997
36.	Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage Sensitivity of a Photovoltaic Devices US patent number 5650635 Granted July 22, 1997
37.	Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber US patent number 5599732 Granted February 4, 1997
38.	Semiconductor Films US patent number 5462008 Granted October 31, 1995
39.	Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same US patent number 5421910 Granted June 6, 1995
40.	New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2 μm up to 9 μm US patent number 5410178 Granted April 25, 1995
41.	Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates US patent number 5389396 Granted February 14, 1995
42.	LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High Power Laser US patent number 5384151 Granted January 24, 1995
43.	Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser US patent number 5012476 Granted January 1, 1991
44.	Group III-V compound based optoelectronic device on silicon substrate US patent number 4897699 Granted January 1, 1990
45.	Procédé de réalisation de composants sans subs US patent number 56431 Granted November 15, 1988
46.	Composant électronique A couche de conductivité thermique élevée US patent number 56235 Granted July 5, 1988
47.	Dispositif optoélectronique a base d'antimoine US patent number 56236 Granted July 5, 1988
48.	Dispositif optoélectronique réalisé en optique intégrée et procédé de réalisation US patent number 56243 Granted July 5, 1988
49.	Dispositif en matériau magnétique & couche anti-usure et applications a une téte d'enregistrement/lecture et A un disque d'enregistrement US patent number 56242 Granted July 5, 1988
50.	Laser de puissance a 0,808 pm de longueur d'onde pour pompage du laser YAG US patent number 56032 Granted March 11, 1988
51.	Générateur photovoltafque a semiconducteurs réalisé sur un substrat a paramétre de maille différent US patent number 55968 Granted February 5, 1988
52.	Procédé de réalisation par épitaxie d'une couche d'un matériau supraconducteur US patent number 55945 Granted January 19, 1988
53.	III-V Compound heteroepitaxial 3-D semiconductor structures utilising superlattices US patent number 4793872 Granted January 1, 1988
54.	Dispositi£ optoélectronique A base de composés III-V sur substrat sllicium US patent number 55699 Granted September 22, 1987
55.	Dispositif en matériaux semiconducteurs réalisé sur un substrat de paramétre de maille différent, application a un laser et procédé de réalisation US patent number 55536 Granted June 2, 1987
56.	38. Procédé de réalisation d'une téte magnétique en couches minces et application & une téte d'enregistrement/lecture" US patent number 55419 Granted March 6, 1987
57.	Téte de mesure de champ magnétique intégrée et son procédé de réalisation US patent number 55041 Granted September 5, 1986
58.	Procédé de réalisation d'une couche de protection mécanique pour téte magnétique d'enregistrement/lecture et t&te magnétique d'enregistrement/ lecture mettant en oeuvre ce procédé US patent number 54856 Granted April 11, 1986
59.	Guide d'onde optique en matériau semiconducteur, laser appliquant ce guide d'onde et procédé de réalisation US patent number 54838 Granted March 28, 1986
60.	Téte de détection optique réalisée en optique intégrée et procédé de réalisation US patent number 54794 Granted February 15, 1986
61.	Capteur A effet magnétorésistif linéaire, son procédé de réalisation et son application dans un émetteur de domaines magnétiques US patent number 54208 Granted March 5, 1985
62.	Diodes émettrices-réceptrices de lumiére et éléments de transmission optiques non réciproques intégrés et leur procédé de fabrication" US patent number 53982 Granted November 12, 1984
63.	Procédé de réalisation, par épitaxie en phase gazeuse, d'hétérostructures a fonctions abruptes constituées de matériaux semiconducteurs a grande mobilité des porteurs de charges" US patent number 51790 Granted September 24, 1981
64.	Composant en matériau semiconducteur épitaxié sur un substrat a paramétre de maille différent et application 4 divers composants en semiconducteurs US patent number 54813 Granted July 3, 1886
65.	Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays US Patent Pending
66.	High Power Mid Wavelength Infrared Laser US Patent Pending
67.	Ohmic Contacts for Semiconductor Devices US Patent Pending
68.	1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD US Patent Pending
69.	Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire Substrates US Patent Pending
70.	Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire Substrates US Patent Pending
71.	SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr. Tobin Marks, NU Chemistry) US Patent Pending
72.	Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2 Atmosphere US Patent Pending
73.	Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors US Patent Pending
74.	Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers US Patent Pending
75.	Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm US Patent Pending
76.	Selective Epitaxy for Quantum Devices US Patent Pending
77.	Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature US Patent Pending
78.	InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays US Patent Pending
79.	Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices US Patent Pending
80.	Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers US Patent Pending
81.	Quantum Dots Infrared Photodetector Material and Structure US Patent Pending
82.	Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs) US Patent Pending
83.	InAsSb Two-Color Detector Technology US Patent Pending
84.	High Power Infrared Lasers US Patent Pending
85.	High Power Infrared Semiconductor Laser US Patent Pending
86.	Heterogeneous Integration of Optoelectronic Devices US Patent Pending
87.	Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices US Patent Pending
88.	Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices US Patent Pending
89.	Highly conductive codoped Ga2O3:Si-In grown by MOCVD US Patent Pending