| 1. | Focal Plane Arrays in Type-II Superlattices US patent number 7001794 Granted February 21, 2007 |
| 2. | Focal Plane Arrays in Type-II Superlattices US patent number 6864552 Granted March 8, 2005 |
| 3. | Multi Color Detector US patent number 6750075 Granted June 15, 2004 |
| 4. | III-Nitride Optoelectronic Devices US patent number 6605485 Granted August 12, 2003 |
| 5. | High Power IR Semiconductor Laser US patent number 6577659 Granted June 10, 2003 |
| 6. | III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices US patent number 6570179 Granted May 27, 2003 |
| 7. | Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002 |
| 8. | Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs) US patent number 6480520 Granted November 12, 2002 |
| 9. | Diode Laser US patent number 6461884 Granted October 8, 2002 |
| 10. | Multi Quantum Well Grinsch Detector US patent number 6459096 Granted October 1, 2002 |
| 11. | Multi Color Detector US patent number 6452242 Granted September 17, 2002 |
| 12. | Multi-Spectral Quantum Well Infrared Photodetectors US patent number 6420728 Granted July 16, 2002 |
| 13. | Quantum Dots for Optoelectronic Devices US patent number 6329668 Granted December 11, 2001 |
| 14. | Fabrication of Defect Free III-Nitride Materials US patent number 6271104 Granted August 7, 2001 |
| 15. | Long Wavelength DH, SCH, and MQW Lasers Based on Sb US patent number 6108360 Granted August 22, 2000 |
| 16. | Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi Long Wavelength Infrared Photodetectors US patent number 6054706 Granted April 15, 2000 |
| 17. | Aluminum-free 980 nm Laser Pump US Patent Pending filed November 30, 1999 |
| 18. | III-Nitride Based Emitting Devices US patent number 5834331 Granted November 10, 1998 |
| 19. | Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors US patent number 5834331 Granted November 10, 1998 |
| 20. | III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices US patent number 5831277 Granted November 3, 1998 |
| 21. | Processing of Sb-based Lasers US patent number 5807765 Granted September 15, 1998 |
| 22. | Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm US patent number 5726078 Granted March 10, 1998 |
| 23. | Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer in Order to Decrease Dark Current of PD US patent number 5668395 Granted September 16, 1997 |
| 24. | Buried-Ridge Laser Device US patent number 5663976 Granted September 2, 1997 |
| 25. | InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes US patent number 5658825 Granted August 19, 1997 |
| 26. | Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage Sensitivity of a Photovoltaic Devices US patent number 5650635 Granted July 22, 1997 |
| 27. | Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber US patent number 5599732 Granted February 4, 1997 |
| 28. | Semiconductor Films US patent number 5462008 Granted October 31, 1995 |
| 29. | Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same US patent number 5421910 Granted June 6, 1995 |
| 30. | New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2 μm up to 9 μm US patent number 5410178 Granted April 25, 1995 |
| 31. | Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates US patent number 5389396 Granted February 14, 1995 |
| 32. | LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High Power Laser US patent number 5384151 Granted January 24, 1995 |
| 33. | Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays US Patent Pending |
| 34. | High Power Mid Wavelength Infrared Laser US Patent Pending |
| 35. | Ohmic Contacts for Semiconductor Devices US Patent Pending |
| 36. | 1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD US Patent Pending |
| 37. | Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire Substrates US Patent Pending |
| 38. | Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire Substrates US Patent Pending |
| 39. | SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr. Tobin Marks, NU Chemistry) US Patent Pending |
| 40. | Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2 Atmosphere US Patent Pending |
| 41. | Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors US Patent Pending |
| 42. | Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers US Patent Pending |
| 43. | Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm US Patent Pending |
| 44. | Selective Epitaxy for Quantum Devices US Patent Pending |
| 45. | Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature US Patent Pending |
| 46. | InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays US Patent Pending |
| 47. | Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices US Patent Pending |
| 48. | Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers US Patent Pending |
| 49. | Quantum Dots Infrared Photodetector Material and Structure US Patent Pending |
| 50. | Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs) US Patent Pending |
| 51. | InAsSb Two-Color Detector Technology US Patent Pending |
| 52. | High Power Infrared Lasers US Patent Pending |
| 53. | High Power Infrared Semiconductor Laser US Patent Pending |
| 54. | Heterogeneous Integration of Optoelectronic Devices US Patent Pending |
| 55. | Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices US Patent Pending |
| 56. | Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices US Patent Pending |
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