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1.  Type-II Antimonide-based Superlattices for the Third Generation Infrared Focal Plane Arrays
Manijeh Razeghi, Edward Kwei-wei Huang, Binh-Minh Nguyen, Siamak Abdollahi Pour, and Pierre-Yves Delaunay
SPIE Proceedings, Infrared Technology and Applications XXXVI, Vol. 7660, pp. 76601F-- May 10, 2010
In recent years, the Type-II superlattice (T2SL) material platform has seen incredible growth in the understanding of its material properties which has lead to unprecedented development in the arena of device design. Its versatility in band-structure engineering is perhaps one of the greatest hallmarks of the T2SL that other material platforms are lacking. In this paper, we discuss advantages of the T2SL, specifically the M-structure T2SL, which incorporates AlSb in the traditional InAs/GaSb superlattice. Using the M-structure, we present a new unipolar minority electron detector coined as the p-M-p, the letters which describe the composition of the device. Demonstration of this device structure with a 14 μm cutoff attained a detectivity of 4x1010 Jones (-50 mV) at 77 K. As device performance improves year after year with novel design contributions from the many researchers in this field, the natural progression in further enabling the ubiquitous use of this technology is to reduce cost and support the fabrication of large infrared imagers. In this paper, we also discuss the use of GaAs substrates as an enabling technology for third generation imaging on T2SLs. Despite the 7.8% lattice mismatch between the native GaSb and alternative GaAs substrates, T2SL photodiodes grown on GaAs at the MWIR and LWIR have been demonstrated at an operating temperature of 77 K reprint
2.  Passivation of type-II InAs/GaSb double heterostructure
P.Y. Delaunay, A. Hood, B.M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi
Applied Physics Letters, Vol. 91, No. 9, p. 091112-1-- August 27, 2007
Focal plane array fabrication requires a well passivated material that is resistant to aggressive processes. The authors report on the ability of type-II InAs/GaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques. The heterostructure consisting of two wide band gap (5 µm) superlattice contacts and a low band gap active region (11 µm) exhibits an R0A averaging of 13·Ω cm2. The devices passivated with SiO2, Na2S and SiO2 or polyimide did not degrade compared to the unpassivated sample and the resistivity of the sidewalls increased to 47 kΩ·cm. reprint
3.  Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 µm
B.M. Nguyen, D. Hoffman, Y. Wei, P.Y. Delaunay, A. Hood and M. Razeghi
Applied Physics Letters, Vol. 90, No. 23, p. 231108-1-- June 4, 2007
The authors report the dependence of the quantum efficiency on device thickness of Type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12 µm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 µm cutoff wavelength photodiodes with a -region thickness of 6.0 µm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×1011 cm·Hz½/W). reprint
4.  Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation
Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, Manijeh Razeghi, and Vaidya Nathan
Applied Physics Letters 90, 233513-- June 4, 2007
Effective surface passivation of Type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 µm2, with a cutoff wavelength of ~11 µm, exhibited near bulk-limited R0A values of ~12 Ω·cm2, surface resistivities in excess of 104 Ω·cm, and very uniform current-voltage behavior at 77 K. reprint
5.  Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array
Ho-Chul Lim; Stanley Tsao; Wei Zhang; Manijen Razeghi
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420R (May 14, 2007)-- May 14, 2007
Self-assembled semiconductor quantum dots have attracted much attention because of their novel properties and thus possible practical applications including the lasers, detectors and modulators. Especially the photodetectors which have quantum dots in their active region have been developed and show promising performances such as high operation temperature due to three dimensional confinement of the carriers and normal incidence in contrast to the case of quantum well detectors which require special optical coupling schemes. Here we report our recent results for mid-wavelength infrared quantum dot infrared photodetector grown by low-pressure metalorganic chemical vapor deposition. The material system we have investigated consists of 25 period self-assembled InAs quantum dot layers on InAlAs barriers, which are lattice-matched to InP substrates, covered with InGaAs quantum well layers and InAlAs barriers. This active region was sandwiched by highly doped InP contact layers. The device operates at 4.1 μm with a peak detectivity of 2.8×1011 cm·Hz1/2/W at 120 K and a quantum efficiency of 35 %. The photoresponse can be observed even at room temperature resulting in a peak detectivity of 6×107 cm·Hz1/2/W. A 320×256 focal plane array has been fabricated in this kind of device. Its performance will also be discussed here. reprint
6.  First Demonstration of ~ 10 microns FPAs in InAs/GaSb SLS
M. Razeghi, P.Y. Delaunay, B.M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V. Nathan and M. Tidrow
IEEE LEOS Newsletter 20 (5)-- October 1, 2006
The concept of Type-II InAs/GaSb superlattice was first brought by Nobel Laureate L. Esaki, et al. in the 1970s. There had been few studies on this material system until two decades later when reasonable quality material growth was made possible using molecular beam epitaxy. With the addition of cracker cells for the group V sources and optimizations of material growth conditions, the superlattice quality become significantly improved and the detectors made of these superlattice materials can meet the demand in some practical field applications. Especially in the LWIR regime, it provides a very promising alternative to HgCdTe for better material stability and uniformity, etc. We have developed the empirical tight binding model (ETBM) for precise determination of the superlattice bandgap. reprint
7.  Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays
M. Razeghi, Y. Wei, A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and R. McClintock
SPIE Infrared Technology and Applications Conference, April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060N-1-- April 21, 2006
Results obtained on GaSb/InAs Type-II superlattices have shown performance comparable to HgCdTe detectors, with the promise of higher performance due to reduced Auger recombination and dark current through improvements in device design and material quality. In this paper, we discuss advancements in Type-II IR sensors that cover the 3 to > 30 µm wavelength range. Specific topics covered will be device design and modeling using the Empirical Tight Binding Method (ETBM), material growth and characterization, device fabrication and testing, as well as focal plane array processing and imaging. Imaging has been demonstrated at room temperature for the first time with a 5 µm cutoff wavelength 256×256 focal plane array. reprint
8.  Negative luminescence of InAs/GaSb superlattice photodiodes
F. Fuchs, D. Hoffman, A. Gin, A. Hood, Y. Wei, and M. Razeghi
Phys. Stat. Sol. C 3 (3)-- February 22, 2006
The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient. reprint
9.  Capacitance-voltage investigation of high purity InAs/GaSb superlattice photodiodes
A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi
Applied Physics Letters 88 (6)-- February 6, 2006
The residual carrier backgrounds of binary type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm–3 has been found. reprint
10.  Negative and positive luminescence in mid-wavelength infrared InAs/GaSb superlattice photodiodes
D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi
IEEE Journal of Quantum Electronics, 41 (12)-- December 1, 2005
The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination. reprint
11.  Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes
D. Hoffman, A. Hood, Y. Wei, A. Gin, F. Fuchs, and M. Razeghi
Applied Physics Letters 87 (20)-- November 14, 2005
The electrically pumped emission behavior of binary type-II InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 µm. With a radiometric calibration of the experimental setup, the internal and external quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The negative luminescence efficiency approaches values as high as 35% without antireflection coating. The temperature dependence of the internal quantum efficiency near zero-bias voltage allows for the determination of the electron-hole-electron Auger recombination coefficient of Γn=1×1024 cm6 s–1. reprint
12.  Focal plane arrays based on quantum dot infrared photodetectors
Manijeh Razeghi; Wei Zhang; Ho-Chul Lim; Stanley Tsao; John Szafraniec; Maho Taguchi; Bijan Movaghar
Proc. SPIE 5838, Nanotechnology II, 125 (June 28, 2005);-- June 28, 2005
Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform QWIPs due to their potential advantages including normally incident absorption, higher responsivity and high temperature operation. Two material systems have been studied: InGaAs/InGaP QDIPs on GaAs substrates and InAs QDIP on InP substrates. An InGaAs/InGaP QDIP has been grown on GaAs substrate by LP-MOCVD. Photoresponse was observed at temperatures up to 200 K with a peak wavelength of 4.7 μm and cutoff wavelength of 5.2 μm. A detectivity of 1.2x1011 cm·Hz1/2/W was obtained at T=77 K and bias of -0.9 V, which is the highest for QDIPs grown by MOCVD. An InAs QDIP structure has also been grown on InP substrate by LP-MOCVD. Photoresponse of normal incidence was observed at temperature up to 160K with a peak wavelength of 6.4 μm and cutoff wavelength of 6.6 μm. A detectivity of 1.0x1010 cm·Hz1/2/W was obtained at 77K at biases of -1.1 V, which is the first and highest detectivity reported for QDIP on InP substrate. 256×256 detector arrays were fabricated first time in the world for both the GaAs and InP based QDIPs. Dry etching and indium bump bonding were used to hybridize the arrays to a Litton readout integrated circuit. For the InGaAs/InGaP QDIP FPA, thermal imaging was achieved at temperatures up to 120 K. At T=77K, the noise equivalent temperature difference (NEDT) was measured as 0.509K with a 300K background and f/2.3 optics. For the InP based QDIPs, thermal imaging was achieved at 77 K. reprint
13.  Uncooled operation of Type-II InAs/GaSb superlattice photodiodes in the mid- wavelength infrared range
Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M.Z. Tidrow, V. Natha
Applied Physics Letters, 86 (23)-- June 6, 2005
We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAs/GaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 µm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 A/W. Detectivity was measured around 109 cm·Hz½/W at room temperature and 1.5×1013 cm·Hz½/W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier–Stark oscillations in the Zener tunneling current were observed up to room temperature. reprint
14.  High performance Type-II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M.Z. Tidrow, and V. Nathan
SPIE Conference, Orlando, FL, Vol. 5783, pp. 86-- March 28, 2005
We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type-II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 µm up to 32 µm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays are presented. reprint
15.  High-Performance Type-II InAs/GaSb Superlattice Photodiodes with Cutoff Wavelength Around 7 µm
Y. Wei, A. Hood, H. Yau, V. Yazdanpanah, M. Razeghi, M.Z. Tidrow and V. Nathan
Applied Physics Letters, 86 (9)-- February 28, 2005
We report the most recent result in the area of type-II InAs/GaSb superlattice photodiodes that have a cutoff wavelength around 7 µm at 77 K. Superlattice with a period of 40 Å lattice matched to GaSb was realized using GaxIn1–x type interface engineering technique. Compared with significantly longer period superlattices, we have reduced the dark current density under reverse bias dramatically. For a 3 µm thick structure, using sulfide-based passivation, the dark current density reached 2.6×10–5 A/cm2 at –3 V reverse bias at 77 K. At this temperature the photodiodes have R0A of 9300 Ω·cm2 and a thermally limited zero bias detectivity of 1×1012 cm·Hz½/W. The 90%–10% cutoff energy width was only 16.5 meV. The devices did not show significant dark current change at 77 K after three months storage in the atmosphere. reprint
16.  High performance LWIR Type-II InAs/GaSb superlattice photodetectors and infrared focal plane array
Y. Wei, A. Hood, A. Gin, V. Yazdanpanah, M. Razeghi and M. Tidrow
SPIE Conference, Jose, CA, Vol. 5732, pp. 309-- January 22, 2005
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 μm. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω·cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms. reprint
17.  Passivation of Type-II InAs/GaSb superlattice photodetectors
A. Hood, Y. Wei, A. Gin, M. Razeghi, M. Tidrow, and V. Nathan
SPIE Conference, Jose, CA, Vol. 5732, pp. 316-- January 22, 2005
Leakage currents limit the operation of high performance Type-II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 µm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of Type-II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated Type-II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed. reprint
18.  GaInAs/InP nanopillar arrays for long wavelength infrared detection
A. Gin, Y. Wei, A. Hood, D. Hoffman, M. Razeghi and G.J. Brown
SPIE Conference, Jose, CA, Vol. 5732, pp. 350-- January 22, 2005
Nanopillar devices have been fabricated from GaInAs/InP QWIP material grown by MOCVD. Using electron beam lithography and reactive ion etching techniques, large, regular arrays of nanopillars with controllable diameters ranging from 150 nm to less than 40 nm have been reproducibly formed. Photoluminescence experiments demonstrate a strong peak wavelength blue shift for nanopillar structures compared to the as-grown quantum well material. Top and bottom metal contacts have been realized using a polyimide planarization and etchback procedure. I-V and noise measurements have been performed. Optical measurements indicate photoconductive response in selected nanopillar arrays. Device peak wavelength response occurs at about 8 µm with peak device responsivity of 420 mA/W. Peak detectivity of 3×108 cm·Hz½/W has been achieved at -1V bias and 30 K. reprint
19.  Ammonium Sulfide Passivation of Type-II InAs/GaSb Superlattice Photodiodes
A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi and M.Z. Tidrow
Applied Physics Letters, 84 (12)-- March 22, 2004
We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 µm×400 µm devices with 8 µm cutoff wavelength was improved by over an order of magnitude to ~20 kΩ at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm2 at –2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. reprint
20.  Modeling of Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method and Interface Engineering
Y. Wei and M. Razeghi
Physical Review B, 69 (8)-- February 15, 2004
We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp3s* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of GaxIn1-x type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality. reprint
21.  Passivation of Type-II InAs/GaSb Superlattice Photodiodes
A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah, and M. Razeghi
International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, CA; Thin Solid Films 447-448-- January 30, 2004
Recently, excellent infrared detectors have been demonstrated using Type-II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type-II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type-II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type-II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices. reprint
22.  Modeling Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: New Aspects
Y. Wei, M. Razeghi, G.J. Brown, and M.Z. Tidrow
SPIE Conference, Jose, CA, Vol. 5359, pp. 301-- January 25, 2004
The recent advances in the experimental work on the Type-II InAs/GaSb superlattices necessitate a modeling that can handle arbitrary layer thickness as well as different types of interfaces in order to guide the superlattice design. The empirical tight-binding method (ETBM) is a very good candidate since it builds up the Hamiltonian atom by atom. There has been a lot of research work on the modeling of Type-II InAs/GaSb superlattices using the ETBM. However, different groups generate very different accuracy comparing with experimental results. We have recently identified two major aspects in the modeling: the antimony segregation and the interface effects. These two aspects turned out to be of crucial importance governing the superlattice properties, especially the bandgap. We build the superlattice Hamiltonian using antimony segregated atomic profile taking into account the interface. Our calculations agree with our experimental results within growth uncertainties. In addition we introduced the concept of GaxIn1-x type interface engineering, which will add another design freedom especially in the mid-wavelength infrared range (3~7 µm) in orderto reduce the lattice mismatch. reprint
23.  High Quality Type-II InAs/GaSb Superlattices with Cutoff Wavelength ~3.7 µm Using Interface Engineering
Y. Wei, J. Bae, A. Gin, A. Hood, M. Razeghi, G.J. Brown, and M. Tidrow
Journal of Applied Physics, 94 (7)-- October 1, 2003
We report the most recent advance in the area of Type-II InAs/GaSb superlattices that have cutoff wavelength of ~3.7 µm. With GaxIn1–x type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ~4.5 meV using an Ar+ ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T1 = 245 K at sample temperatures below 160 K with fluent power of 70 mW, and T1 = 203 K for sample temperatures above 180 K with fluent power of 70 and 420 mW. reprint
24.  Quantum Sensing Using Type-II InAs/GaSb Superlattice for Infrared Detection
M. Razeghi, A. Gin, Y. Wei, J. Bae, and J. Nah
Microelectronics Journal, 34 (5-8)-- May 1, 2003
Large, regular arrays of bulk GaSb and InAs/GaSb Type-II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm×500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III–V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO2 and Si3N4 thin films has also been discussed. reprint
25.  Recent Advances in InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection
G.J. Brown, F. Szmulowicz, K. Mahalingam, S. Houston, Y. Wei, A. Gin and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 4999, pp. 457-- January 27, 2003
New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous long and very long wavelength infrared imaging applications. One materials system has shown great theoretical and, more recently, experimental promise for these applications: InAs/InxGa1-xSb type-II superlattices. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection beyond 15 microns. The infrared properties of various compositions and designs of these type-II superlattices have been studied. The infrared photoresponse spectra are combined with quantum mechanical modeling of predicted absorption spectra to provide insight into the underlying physics behind the quantum sensing in these materials. Results for superlattice photodiodes with cut-off wavelengths as long as 25 microns are presented. reprint

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