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Page 1 (23 Items)
| 1. | Type-II Binary Superlattices for Infrared Detecto
M. Razeghi, H. Mohseni and G.J. Brown
Journal of the Korean Physical Society 39-- December 1, 2001
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| 2. | Long Wavelength Type-II Photodiodes Operating at Room Temperature
H. Mohseni and M. Razeghi
IEEE Photonics Technology Letters 13 (5)-- May 1, 2001
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| 3. | High Performance InAs/GaSb Superlattice Photodiodes for the Very Long Wavelength Infrared Range
H. Mohseni, M. Razeghi, G.J. Brown, Y.S. Park
Applied Physics Letters 78 (15)-- April 9, 2001
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| 4. | Miniaturization: enabling technology for the new millennium
M. Razeghi and H. Mohseni
SPIE International Conference on Solid State Crystals, Zakopane, Poland, "Epilayers and Heterostructures in Optoelectronics and Semiconductor"; Proceedings 4413-- April 1, 2001
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| 5. | High Performance Type-II InAs/GaSb Superlattice Photodiodes
H. Mohseni, Y. Wei, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices VI"; Proceedings 4288-- January 22, 2001
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| 6. | Miniaturization: enabling technology for the new millennium
M. Razeghi and H. Mohseni
Opto-Electronics Review 9 (2)-- January 1, 2001
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| 7. | Very Long Wavelength Infrared Type-II Detectors Operating at 80K
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park
Applied Physics Letters 77 (11)-- September 11, 2000
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| 8. | Growth and Characterization of Very Long Wavelength Type-II Infrared Detectors
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, W. Mitchel, and A. Saxler
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 9. | Growth and Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared Range
H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 10. | Uncooled InAs/GaSb Type-II infrared detectors grown on GaAs substrate for the 8-12 um atmospheric window
H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel
IEEE Journal of Quantum Electronics 35 (7)-- July 1, 1999
The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λc=8 μm and a peak detectivity of 1.2×108 cm·Hz½/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays ...[Visit Journal]
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| 11. | High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 um
D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi
Applied Physics Letters 74 (9)-- March 1, 1999
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| 12. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
J.D. Kim, H. Mohseni, J.S. Wojkowski, J.J. Lee and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 13. | Demonstration of InAsSb/AlInSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 um Wavelength Range
J.S. Wojkowski, H. Mohseni, J.D. Kim, and M. Razeghi
SPIE Conference, San Jose, CA, -- January 27, 1999
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| 14. | Interface-induced Suppression of the Auger Recombination in Type-II InAs/GaSb Superlattices
H. Mohseni, V.I. Litvinov and M. Razeghi
Physical Review B 58 (23)-- December 15, 1998
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| 15. | Growth and Characterization of InAs/GaSb Type-II Superlattice for 8-12 um Room Temperature Detectors
H. Mohseni and M. Razeghi
Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays, Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21)-- November 5, 1998
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| 16. | Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors
M. Razeghi, J. Wojkowski, J.D. Kim, H. Mohseni and J.J. Lee
Symposium on Compound Semiconductors, Nara, Japan; Proceedings-- October 12, 1998
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| 17. | Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector
S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi
Applied Physics Letters 73 (7)-- August 17, 1998
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| 18. | Growth and characterization of InAs/GaSb type II superlattices for long-wavelength infrared detectors
H. Mohseni, E. Michel, M. Razeghi, W. Mitchel, and G. Brown
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 19. | Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
H. Mohseni, E. Michel, J. Sandven, M. Razeghi, W. Mitchel, and G. Brown
Applied Physics Letters 71 (10)-- September 8, 1997
In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 µm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33 × 109 cm·Hz½/W at 10.3 µm at 78 K. ...[Visit Journal]
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| 20. | High Carrier Lifetime InSb Grown on GaAs Substrates
E. Michel, H. Mohseni, J.D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, and M. Ahoujja
Applied Physics Letters 71 (8-- August 25, 1997
We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 µm epilayer, peak mobilities as high as ~ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K. ...[Visit Journal]
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| 21. | Sb-based infrared materials and photodetectors for the near room temperature applications
J.D. Kim, E. Michel, H. Mohseni, J. Wojkowski, J.J. Lee and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 2999, pp. 55-- February 12, 1997
We report on the growth of InSb, InAsSb, and InTlSb alloys for infrared photodetector applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The materials and detector structures were grown on (100) and (111)B semi-insulating GaAs and GaAs coated Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. Photoconductive detectors fabricated from InAsSb and InTlSb have been operated in the temperature range from 77 K to 300 K. The material parameters for photovoltaic device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with 77 K peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10-2 V/W at 8 micrometers . The RoA product of InAsSb detectors has been theoretically and experimentally analyzed. ...[Visit Journal]
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| 22. | Infrared Imaging Arrays Using Advanced III-V Materials and technology
M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseni, J.J. Lee, J. Wojkowski, K.S. Kim, H.I. Jeon, and J. X
Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain; Proceedings-- January 6, 1997
Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system ...[Visit Journal]
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| 23. | InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al2O3 Substrates
E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. Mitchel, and M. Ahoujja
Materials Research Society Symposium, "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings 450-- December 2, 1996
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Page 1 (23 Items)
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