Publications by    
Page 1  (2 Items)
1.  InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition
B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (23)-- June 7, 1999
We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm². reprint
 
2.  Recent achievement in MIR high power injection laser diodes (3 to 5 μm)
M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi
LEOS Newsletter 13 (1)-- February 1, 1999
 
Page 1  (2 Items)
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