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Page 1 (2 Items)
1.
 | High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE
Jiakai Li, R. K. Saroj, Steven Slivken, V. H. Nguyen, Gail Brown and Manijeh Razeghi
Photonics 2022, 9, 664
In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on
InAs/InAsSb type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 um at 77 K. The
superlattice for the device was grown by molecular beam epitaxy while the planar device structure
was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K,
the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and
48% respectively at 3.7 um under -20 mV for the MWIR planar photodetector. At 77 K, the MWIR
planar photodetector exhibits a dark current density of 2.0E5 A/cm^2 and the R0A value of
~3.0E2 Ohm cm^2 under -20 mV, which yielded a specific detectivity of 4.0E11 cm Hz^(1/2)/W
at 3.7 um. At 150 K, the planar device showed a dark current density of 6.4E-5 A/cm^2 and
a quantum efficiency of 49% at ~3.7 um under -20 mV, which yielded a specific detectivity of
2.0E11 cm Hz^(1/2)/W. reprint
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2.
 | Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE
Rajendra K. Saroj, Van Hoang Nguyen, Steven Slivken, Gail J. Brown and Manijeh Razeghi
IEEE Journal of Quantum Electronics
We report on a planar long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of −20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0×10^12 cm.Hz^1/2/W, with a dark current density of 1.5 × 10−5 A/cm2 and the differential-resistance-area product of ∼8.6 × 10−1 Ω.cm2, under an applied bias of −20 mV at 77 K. A comparative study between the planar and conventional mesa isolated photodetectors was also carried out. reprint
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Page 1 (2 Items)
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