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Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy
Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy
Lakshay Gautam , Junhee Lee, Michael Richards, and Manijeh Razeghi ,
Lakshay Gautam, Manijeh Razeghi, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 59, NO. 6, 10.1109/JQE.2023.3325254
We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of 320 × 256 focal plane array. reprint
 

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