Center for Quantum Devices - Journal Articles and Conference Proceedings

Page 1 (3 Items)

1.	Long-Wavelength Quantum Well Infrared Photodetectors M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino and Y.S. Park Defense Science Journal 51 (1)-- January 1, 2001
2.	Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park Infrared Physics and Technology 42 (3-5)-- January 1, 2001 Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to GaAs or InP substrate, p-Type GaAs/GaInP QWIPs show background limited performance up to temperatures of 120 K, while p-type GaInAsP/GaInAsP QWIPs exhibit broadband response from lambda = 2.5-10 mum. n-Type GaAs/GaInP QWIPs are sensitive deep into the VLWIR with very low dark current. Extremely large responsivities of 33.2 AW(-1) were obtained from n-type GaInAs/InP QWIPs operating at lambda = 9 mum. Devices made from n-type AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 mum out to 20 mum while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 and 8.5 mum Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry. reprint
3.	Quantum Well Infrared Photodetectors (3 - 20 μm) Focal Plane Arrays: Monolithic Integration with Si-based Readout-integrated Circuitry for Low Cost and High Performance M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G. J. Brown, and Y.S. Park SPIE Conference, Infrared Technology and Applications XXVI, San Diego, CA, -- July 30, 2000

Page 1 (3 Items)