Center for Quantum Devices - Journal Articles and Conference Proceedings

Page 1 (10 Items)

1.	Intersubband hole absorption in GaAs-GaInP Quantum Wells grown by Gas Source Molecular Beam Epitaxy J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi with G. Brown and S.M. Hegde (Wright Laboratory) Applied Physics Letters 65 (9)-- August 29, 1994 P-doped GaAs‐GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half‐maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated. reprint
2.	First observation of the quantum Hall effect in a Ga0.47In0.53As‐InP heterostructure with three electric subbands M. Razeghi; J. P. Duchemin; J. C. Portal; L. Dmowski; G. Remeni; R. J. Nicholas; A. Briggs M. Razeghi, J. P. Duchemin, J. C. Portal, L. Dmowski, G. Remeni, R. J. Nicholas, A. Briggs; First observation of the quantum Hall effect in a Ga0.47In0.53As‐InP heterostructure with three electric subbands. Appl. Phys. Lett. 17 March 1986; 48 (11)-- March 17, 1986 Shubnikov–de Haas and quantum Hall effects have been studied in GaInAs‐InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs‐InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) subbands is observed in both perpendicular and tilted magnetic field orientations. This enables a demonstration of the importance of intersubband scattering in resistivity and cyclotron resonance. reprint
3.	Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition M. Razeghi; R. Blondeau; K. Kazmierski; M. Krakowski; J. P. Duchemin M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, J. P. Duchemin; Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 15 January 1985; 46 (2): 131–133.-- January 15, 1985 GaInAsP‐InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink‐free) light‐current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.
4.	Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition M. Razeghi; J. P. Duchemin; J. C. Portal M. Razeghi, J. P. Duchemin, J. C. Portal; Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 1 January 1985; 46 (1): 46–48.-- January 1, 1985 We report the first observation of a two‐dimensional electron gas from Shubnikov–de Haas experiments, in a Ga0.25In0.75As0.50P0.50‐InP heterojunction, multi‐quantum well, and superlattices grown by metalorganic chemical vapor deposition at reduced pressure.
5.	Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys M. Razeghi, J.P. Duchemin M. Razeghi, J.P. Duchemin, Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys, Journal of Crystal Growth, Volume 70, Issues 1–2, 1984, Pages 145-149,-- December 1, 1984 The low pressure metalorganic chemical vapour deposition (LPMOCVD) growth of GaxIn1-xAsyP1-y-InP lattice matched system, with high mobilities, sharp interfaces, low background doping densities, and the formation of a two-dimensional electron gas (2DEG) at the interfaces, has recently made spectacular advances, as in evidenced by the availability of high quality DH lasers, PIN photodiodes, and Gunn diodes. We present here some new results obtained on the above-mentioned material and devices. reprint
6.	1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD M. Razeghi, B. de Crémoux, J.P. Duchemin M. Razeghi, B. de Crémoux, J.P. Duchemin, 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD, Journal of Crystal Growth, Volume 68, Issue 1, 1984, Pages 389-397,-- September 1, 1984 Room temperature pulse operation and continuous wave (CW) operation in the 1.2–1.6 μm region have been achieved in GaInAsP-InP DH lasers fabricated on material grown by LPMOCVD. Threshold currents density as low as 430 A/cm2 (cavity length of 950 μm) have been measured for devices emitting at 1.3 μm. Threshold current densities of 1060 A/cm2 (cavity length of 400 μm) have been obtained for devices emitting at 1.55 μm, with active layer thicknesses of 0.22 μm. Values of T0 between 60 and 70 K have been obtained. Fundamental transverse mode oscillation has been achieved (for CW operation) up to an output power of 10 mW. The preliminary results on the aging test are most encouraging and demonstrate that the LPMOCVD lasers emitting at 1.2–1.6 μm have comparable degradation rates to those of LPE lasers suggesting the LPMOCVD technique is promising for large scale production of laser diodes. reprint
7.	Low pressure metalorganic chemical vapor deposition of InP and related compounds M. Razeghi, M. A. Poisson, J. P. Larivain & J. P. Duchemin Razeghi, M., Poisson, M.A., Larivain, J.P. et al. Low pressure metalorganic chemical vapor deposition of InP and related compounds. J. Electron. Mater. 12, 371–395 (1983). https://doi.org/10.1007/BF02651138-- March 1, 1983 The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga0.47In0.53 As and GaxIn1-xAsyP1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm2 V−1S−1 at 300 K and 58 900 cm2 V−1 S−1 at 772K, and for GaInAs was 11900 cm2 V−1 S−1 at 300 K, 54 600 cm2 V−1 S−1 at 77 K and 90 000 cm V−1S−1 at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current. reprint
8.	TEG IN LP-MO CVD Ga 0 4 7 ln 0 S3 As-lnP SUPERLATTICE M. RAZEGHIM. A. POISSONJ. P. LARIVAINB. de CREMOUXJ. P. DUCHEMIN ELECTRONICS LETTERs, 1982 ,Vol. 18-- April 15, 1982 We report the first successful growth of Ga o .4. 7 In 0 . J3 As-InPsuperlattice by the low-pressure metalorganic chemicalvapour deposition technique, and evidence for TEG proper-ties in these structures. reprint
9.	1-5 jim ROOM-TEMPERATURE PULSED OPERATION OF GalnAsP/lnP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD Manijeh Razeghi, P. Hirtz, J.P. Larivain, R. Blondeau, B. de Crémoux, J.P. Duchemin, ELECTRONICS LETTERS, vol. 17, no.18-- September 3, 1981 The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. InxGa1−xAsyP1−y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35–0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1−xGaxASyP1−y, very attractive as a semiconductor laser and detector material for future fibre communication systems. reprint
10.	GalnAs AND GaInAsP MATERIALS GROWN BY LOW PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS J.P. Duchemin, J.P. Hirtz, M. Razeghi, M. Bonnet , S.D. Hersee J.P. Duchemin, J.P. Hirtz, M. Razeghi, GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications, Journal of Crystal Growth, 55, 1, 1981, Pages 64-73,-- August 1, 1981 The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-matched to InP, for the complete compositional range between InP (λ=0.91 μm) and the ternary compound Ga0.47In0.53As (λ=1.67 μm). By contrast to LPE growth it has been found that during the MOCVD growth of double heterostructures InP can be grown directly onto the ternary or quaternary with no disturbance of the active layer, i.e. there is no effect equivalent to “melt back”. The compositional grading on both sides of the active layer was measured by scanning Auger spectroscopy on bevelled samples. It was found that the graded regions were typically less than 100 Å wide for GaInAsP active layers and less than 50 Å wide for GaInAs active layers. Single layers of undoped GaInAs exhibited a typical mobility of 6700 cm2 V-1s-1 at 1.5×1017 cm-3. The compositional uniformity of the ternary layers was characterised by measurement of the photoluminescence wavelength at various points on a large sample. The wavelength varied by <3 nm over 95% of the area, which was approximately 8 cm2. Our early MOCVD grown GaInAsP/InP DH lasers exhibited high thresholds due to a poor interface between the p-InP and the active layer. However, recently fabricated broad area lasers emitting at 1.27 μm show an average threshold current density of 1.5 kA cm-2 with a T0 of between 70 to 80 K. Stripe geometry lasers have being fabricated from this material and CW operation has been obtained. reprint

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