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| 201. | Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi
Applied Physics Letters 81 (5)-- July 29, 2002
We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ~5 V with a differential resistance of ~40 Omega. The peak emission wavelength redshifts ~1 nm at high injection currents. ...[Visit Journal]
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| 202. | Optoelectronic Integrated Circuits (OEICs) for Next Generation WDM Communications
M. Razeghi and S. Slivken
SPIE Conference, Boston, MA, "Active and Passive Optical Components for WDM Communications II"; Proceedings 4870-- July 29, 2002
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| 203. | High-Power (~9um) Quantum Cascade Lasers
S. Slivken, Z. Huang, A. Evans, and M. Razeghi
Applied Physics Letters 80 (22)-- June 3, 2002
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| 204. | Low-Pressure Metal Organic Chemical Vapor Deposition Growth of InAsSbP Based Materials for Infrared Laser Applications
M. Razeghi
15th Annual Solid State and Diode Laser Technology Review (SSDLTR), Albuquerque, NM; Technical Digest MIR1-- June 3, 2002
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| 205. | High power InAsSbP based electrical injection laser diodes emitting between 3-5 mm
W. Zhang and M. Razeghi
15th Annual Solid State and Diode Laser Technology Review (SSDLTR), Albuquerque, NM; Technical Digest MIR1-- June 3, 2002
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| 206. | High-Power (~9 um) Quantum Cascade Lasers
S. Slivken, Z. Huang, A. Evans, and M. Razeghi
Virtual Journal of Nanoscale Science and Technology 5 (22)-- June 3, 2002 ...[Visit Journal]
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| 207. | Optoelectronics: Learning From Nature
M. Razeghi and S. Slivken
Business Briefing: Global Optical Communications-- June 1, 2002
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| 208. | Short Wavelength Solar-Blind Detectors: Status, Prospects, and Markets
M. Razeghi
Proceedings of IEEE, Wide Bandgap Semiconductor Devices: The Third Generation Semiconductor Comes of Age 90 (6)-- June 1, 2002
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| 209. | Advanced InAs/GaSb Superlattice Photovoltaic Detectors for Very-Long Wavelength Infrared Applications
Y. Wei, A. Gin, M. Razeghi, and G.J. Brown
Applied Physics Letters 80 (18)-- May 6, 2002
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| 210. | Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors
P. Kung, A. Yasan, R. McClintock, S. Darvish, K. Mi, and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 4650, pp. 199-- May 1, 2002
Design of the photodetector structure is one of the key issues in obtaining high performance devices; especially the thickness of the intrinsic region for p-i-n photodiodes is a crucial value and needs to be optimized. We compare the performance of the p-i-n photodiodes with different widths for the depletion region, which shows a trade-off between speed and responsivity of the devices. ...[Visit Journal]
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| 211. | Characteristics of high quality p-type AlxGa1-xN/GaN superlattices
A. Yasan, R. McClintock, S.R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi
Applied Physics Letters 80 (12)-- March 18, 2002
Very-high-quality p-type AlxGa1–xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x = 26%, the hole concentration reaches a high value of 4.2×1018 cm–3 with a resistivity as low as 0.19 Ω · cm by Hall measurement. Measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory. ...[Visit Journal]
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| 212. | High Detectivity GaInAs/InP Quantum Well Infrared Photodetectors Grown on Si Substrates
J. Jiang, C. Jelen, M. Razeghi and G.J. Brown
IEEE Photonics Technology Letters 14 (3)-- March 1, 2002
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| 213. | Type-II InAs/GaSb Superlattices and Detectors with Cutoff Wavelength Greater Than 18 um
M. Razeghi, Y. Wei, A. Gin, G.J. Brown and D. Johnstone
SPIE Conference, San Jose, CA, -- January 25, 2002
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| 214. | Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current Density
S. Slivken and M. Razeghi
Solid State Electronics Journal 46-- January 1, 2002
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| 215. | 280 nm UV LEDs Grown on HVPE GaN Substrates
A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi, and R.J. Molnar
Opto-Electronics Review, 10 (4)-- January 1, 2002
We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE-grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ~30% reduction in current-voltage differential resistance, ~15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements. ...[Visit Journal]
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| 216. | Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC
H. Ohsato, K. Wada, T. Kato, C.J. Sun, and M. Razeghi
Materials Science Forum 389-393-- January 1, 2002
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| 217. | Type-II Binary Superlattices for Infrared Detecto
M. Razeghi, H. Mohseni and G.J. Brown
Journal of the Korean Physical Society 39-- December 1, 2001
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| 218. | Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing
M. Razeghi, Y. Wei, A. Gin and G.J. Brown
Materials Research Society Fall Meeting, Boston, MA; MRS Symposium Proceedings, Vol. 692 (H3.1)-- November 26, 2001
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| 219. | High Power 3-12 um Infrared Lasers: Recent Improvements and Future Trends
M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park
Physica E: Low-Dimensional Systems and Nanostructures 11 (2-3)-- October 1, 2001
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| 220. | Long Wavelength Type-II Photodiodes Operating at Room Temperature
H. Mohseni and M. Razeghi
IEEE Photonics Technology Letters 13 (5)-- May 1, 2001
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| 221. | High Performance InAs/GaSb Superlattice Photodiodes for the Very Long Wavelength Infrared Range
H. Mohseni, M. Razeghi, G.J. Brown, Y.S. Park
Applied Physics Letters 78 (15)-- April 9, 2001
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| 222. | Miniaturization: enabling technology for the new millennium
M. Razeghi and H. Mohseni
SPIE International Conference on Solid State Crystals, Zakopane, Poland, "Epilayers and Heterostructures in Optoelectronics and Semiconductor"; Proceedings 4413-- April 1, 2001
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| 223. | High performance quantum cascade lasers (~11 um) operating at high temperature (T>= 425K)
A. Tahraoui, A. Matlis, S. Slivken, J. Diaz, and M. Razeghi
Applied Physics Letters 78 (4)-- January 22, 2001
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| 224. | High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
M. Razeghi, S. Slivken, A. Tahraoui and A. Matlis
SPIE Conference, San Jose, CA, "In-Plane Semiconductor Lasers V"; Proceedings 4287-- January 22, 2001
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| 225. | Quantum Dot Intersubband Photodetectors
C. Jelen, M. Erdtmann, S. Kim, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices VI"; Proceedings 4288-- January 22, 2001
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