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776. | Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique Acher O., Omnes F., Razeghi M., Drevillion B. Thomson-CSF Revue Technique, Vol. 23, No. 3,-- September 1, 1991 |
777. | Incorporation of Impurities in GaAs Grown by MOCVD Razeghi M., and M.A. di Forte-Poisson Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991 |
778. | Etude du dopage de type n et p des materiaux GaAs et GaInP Omnes F., Defour M., Razeghi M. Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991 |
779. | GaAs-GaInP Multipayers for High Performance Electronic Devices Omnes F., and Razeghi M. Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991 |
780. | A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System Omnes F., and Razeghi M. Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991 |
781. | Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition Omnes F., and Razeghi M. Applied Physics Letters 59 (9), p. 1034-- May 28, 1991 Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements. reprint |
782. | Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M. Applied Physics Letters 59 (8), p. 941-- May 28, 1991 Non-intentionally doped metalorganic vapor‐phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐voltage and deep-level transient spectroscopy techniques. They are found to exhibit a free‐carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015 cm−3. reprint |
783. | InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications, Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L. Optical and Quantum Electronics, 23-- November 30, 1990 |
784. | Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Feng S.L., Bourgoin J.C., and Razeghi M. Semiconductor Science and Technology 6, pp. 229-230-- November 30, 1990 |
785. | Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications Razeghi M. Proceeding of the 7th International Conference on Vapor Growth and Epitaxy, Nagoya, Japan-- November 30, 1990 |
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