Publications by    
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651.  High Quality InSb Epitaxial Film Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi
-- November 1, 1992
652.  Optical Investigations of GaAs-GaInP Quantum Wells Grown on the GaAs, InP, and Si Substrates
H. Xiaoguang, M. Razeghi
Applied Physics Letters 61 (14)-- October 5, 1992
We report the first photoluminescence investigation of GaAs‐Ga0.51In0.49P lattice matched multiquantum wells grown by the low pressure metalorganic chemical vapor deposition simultaneously in the same run on GaAs, Si, and InP substrates. The sharp photoluminescence peaks indicate the high quality of the samples on three different substrates. The temperature dependence of the photoluminescence indicates that the intrinsic excitonic transitions dominate at low temperature and free‐carrier recombinations at room temperature. The photoluminescence peaks of the samples grown on Si and InP substrates shift about 15 meV from the corresponding peaks of the sample grown on the GaAs substrate. Two possible interpretations are provided for the observed energy shift. One is the diffusion of In along the dislocation threads from GaInP to GaAs and another is the localized strain induced by defects and In segregations. reprint
653.  Frontiers of Monolithic Integration of Semiconductor III-V Optoelectronic Devices with Si Technology
M. Razeghi, R. Sudharsanan, and J.C.C. Fan
-- August 1, 1992
654.  GaInAs/GaAs/GaInP Buried Ridge Structure Single Quantum Well Laser Emitting at 0.98 μm
K. Mobarhan, M. Razeghi and R. Blondeau
-- July 30, 1992
655.  Evaluation of the Band Offsets of GaAs-GaInP Multilayers by Electroreflectance
Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue
SPIE Proceedings, Vol. 1676, pp. 130-- January 1, 1992
We report the first band offset measurement of GaAs/Ga0.51In0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities (Delta) Ec equals 159 ± 4 meV and (Delta) Ev equals 388 ± 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured. reprint
656.  Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique
Acher O., Omnes F., Razeghi M., Drevillion B.
-- September 1, 1991
657.  Incorporation of Impurities in GaAs Grown by MOCVD
Razeghi M., and M.A. di Forte-Poisson
-- September 1, 1991
658.  Etude du dopage de type n et p des materiaux GaAs et GaInP
Omnes F., Defour M., Razeghi M.
-- September 1, 1991
659.  GaAs-GaInP Multipayers for High Performance Electronic Devices
Omnes F., and Razeghi M.
-- September 1, 1991
660.  A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System
Omnes F., and Razeghi M.
-- September 1, 1991
661.  Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition
Omnes F., and Razeghi M.
Applied Physics Letters 59 (9), p. 1034-- May 28, 1991
Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements. reprint
662.  Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers
Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M.
Applied Physics Letters 59 (8), p. 941-- May 28, 1991
Non-intentionally doped metalorganic vapor‐phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐voltage and deep-level transient spectroscopy techniques. They are found to exhibit a free‐carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015 cm−3. reprint
663.  InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications,
Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L.
-- November 30, 1990
664.  Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Feng S.L., Bourgoin J.C., and Razeghi M.
-- November 30, 1990
665.  Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications
Razeghi M.
-- November 30, 1990

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