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Page 19 of 19: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (475 Items)
| 451. | Growth of In1-xTlxSb, a New Infrared Material, by Low-Pressure Metalorganic Chemical Vapor Deposition
Y.H. Choi, R. Sudharsanan, C, Besikci, and M. Razeghi
Applied Physics Letters 63 (3)-- July 19, 1993
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| 452. | GaInAsP/InP 1.35 µm Double Heterostructure Laser Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition
K. Mobarhan, C. Jelen, E. Kolev, and M. Razeghi
Journal of Applied Physics 74 (1)-- July 1, 1993
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| 453. | Anomalous Hall Effect in InSb Layers Grown by MOCVD on GaAs Substrates
C. Besikci, Y.H. Choi, R. Sudharsanan, and M. Razeghi
Journal of Applied Physics 73 (10)-- May 15, 1993
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| 454. | Investigation of the Heteroepitaxial Interfaces in the GaInP/GaAs Superlattices by High Resolution X-Ray Diffraction and Dynamical Solutions
Xiaoguang He and Manijeh Razeghi
Journal of Applied Physics 73 (7)-- April 1, 1993
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| 455. | Well Resolved Room Temperature Photovoltage Spectra of GaAs-GaInP Quantum Wells and Superlattices
Xiaoguang He and Manijeh Razeghi
Applied Physics Letters 62 (6)-- February 8, 1993
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| 456. | Intermixing of GaInP/GaAs Multiple Quantum Wells
C. Francis, M.A. Bradley, P. Boucaud, F.H. Julien and M. Razeghi
Applied Physics Letters 62 (2)-- January 11, 1993
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| 457. | Finite-Size Scaling in the Dissipative Transport Regime Between Quantum Hall Plateaus
Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing, K. Ploog
Physical Review-- January 1, 1993
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| 458. | Splitting of the Landau Level Coincidence: A Novel Phase Transition in Tilted Magnetic Fields
Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing
Physical Review-- January 1, 1993
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| 459. | Growth of InSb/GaAs layers on YIG-coated GGG substrate
C. Jelen, S. Charriere, M. Razeghi, and V.J. Leppert
Mat. Res. Soc. Symp. Proc., Vol. 281-- January 1, 1993
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| 460. | High Power 0.98 µm GaInAs/GaAs/GaInP Multiple Quantum Well Laser
K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki
Journal of Applied Physics 72 (9)-- November 1, 1992
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| 461. | High Quality InSb Epitaxial Film Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi
Proceeding of Materials Research Society Conference Proceedings, Vol. 281-- November 1, 1992
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| 462. | Optical Investigations of GaAs-GaInP Quantum Wells Grown on the GaAs, InP, and Si Substrates
H. Xiaoguang, M. Razeghi
Applied Physics Letters 61 (14)-- October 5, 1992
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| 463. | Frontiers of Monolithic Integration of Semiconductor III-V Optoelectronic Devices with Si Technology
M. Razeghi, R. Sudharsanan, and J.C.C. Fan
Proceedings of International Conference on Solid State Devices and Materials, Tsukuba, Japan-- August 1, 1992
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| 464. | GaInAs/GaAs/GaInP Buried Ridge Structure Single Quantum Well Laser Emitting at 0.98 µm
K. Mobarhan, M. Razeghi and R. Blondeau
Electronics Letters 28 (16)-- July 30, 1992
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| 465. | Evaluation of the Band Offsets of GaAs-GaInP Multilayers by Electroreflectance
Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue and P. Raccah
Journal of Applied Physics-- January 1, 1992
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| 466. | Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique
Acher O., Omnes F., Razeghi M., Drevillion B.
Thomson-CSF Revue Technique, Vol. 23, No. 3,-- September 1, 1991
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| 467. | Incorporation of Impurities in GaAs Grown by MOCVD
Razeghi M., and M.A. di Forte-Poisson
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
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| 468. | Etude du dopage de type n et p des materiaux GaAs et GaInP
Omnes F., Defour M., Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
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| 469. | GaAs-GaInP Multipayers for High Performance Electronic Devices
Omnes F., and Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
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| 470. | A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System
Omnes F., and Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
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| 471. | InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications,
Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L.
Optical and Quantum Electronics, 23-- November 30, 1990
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| 472. | Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition
Omnes F., and Razeghi M.
Applied Physics Letters 59 (9), p. 1034-- November 30, 1990
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| 473. | Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers
Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M.
Applied Physics Letters 59 (8), p. 941-- November 30, 1990
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| 474. | Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Feng S.L., Bourgoin J.C., and Razeghi M.
Semiconductor Science and Technology 6, pp. 229-230-- November 30, 1990
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| 475. | Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications
Razeghi M.
Proceeding of the 7th International Conference on Vapor Growth and Epitaxy, Nagoya, Japan-- November 30, 1990
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