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426.  Novel Sb-based Alloys for Uncooled Infrared Photodetector Applications
M. Razeghi
SPIE Conference, San Jose, CA, -- January 22, 2001
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Bi and Tl in InSb was investigated with high-resolution x-ray diffraction, energy dispersive x-ray analysis, and optical photoresponse measurements. We also demonstrate the photodetectors fabricated from the grown InSbBi and InTlSb alloys. InSb0.96Bi0.04 photoconductive detectors exhibited a responsivity of 3.2 V/W at 77 K. The estimated Johnson noise limited detectivity at 7 micrometers was 1.7 X 108 cm·Hz½/W at 77 K. A room temperature operating InSb0.95Bi0.05 photodetector was also demonstrated. Photoresponse up to 12 micrometers was achieved at 300 K. The responsivity and Johnson noise-limited detectivity at 10.6 μm were 1.9 mV/W and 1.2 X 106 cm·Hz½/W, respectively. Photoresponse up to 15 μm was achieved at 300 K from quaternary InTlAsSb and InBiAsSb alloys. reprint
 
427.  Long-Wavelength Quantum Well Infrared Photodetectors
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino and Y.S. Park
-- January 1, 2001
 
428.  Miniaturization: enabling technology for the new millennium
M. Razeghi and H. Mohseni
-- January 1, 2001
 
429.  Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park
-- January 1, 2001
 
430.  AlxGa1-xN for Solar-Blind UV Detectors
P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi
Journal of Crystal Growth 231 (2001)-- January 1, 2001
We report on the metalorganic chemical vapor deposition of high quality AlGaN thin films on sapphire substrates over a wide range of Al concentrations. The quality of these AlGaN materials was verified through a demonstration of high performance visible and solar-blind UV p–i–n photodiodes with peak cutoff wavelengths ranging from 227 to 364 nm. External quantum efficiencies for these devices reached as high as 69% with over five orders rejection ratio from the peak to visible wavelengths. reprint
 
431.  Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
J.J. Lee and M. Razeghi
-- December 1, 2000
 
432.  High Power Electrically Injected Mid-Infrared Interband Lasers Grown by LP-MOCVD
B. Lane and M. Razeghi
-- December 1, 2000
 
433.  Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years
M. Razeghi
IEEE Journal of Selected Topics in Quantum Electronics 6 (6), pp.1344 - 1354 -- November 1, 2000
This paper reviews some of our pioneering contributions to the field of III–V compound semiconductor materials and low-dimensional optoelectronic devices. These contributions span from the ultraviolet (200 nm) up to the far-infrared (25 μm) portion of the electromagnetic spectrum and have had a major scientific and technological impact on the semiconductor world in the past 20 years. reprint
 
434.  Low-threshold and high power (~9.0 μm) quantum cascade lasers operating at room temperature
A. Matlis, S. Slivken, A. Tahraoui, K.J. Luo, J. Diaz, Z. Wu, A. Rybaltowski, C. Jelen, and M. Razeghi
Applied Physics Letters 77 (12)-- September 18, 2000
We report a low threshold current density and high power for λ ∼ 9 μm AlInAs/GaInAs quantum cascade lasers operating at room temperature. The threshold current density is 1.95 kA/cm² at 300 K and 0.61 kA/cm² at 80 K for 5 μs pulses at 200 Hz repetition rate. The peak output power is 700 mW at room temperature and 1.3 W at 80 K per two facets for cavity length is 3 mm with a stripe width of 20 μm. The characteristic temperature T0 is 185 °C. The slope efficiency is 450 and 800 mW/A at 300 and 80 K, respectively. In continuous wave operation, the output power is more than 150 mW at 80 K and 25 mW at 140 K. This high performance was achieved by improving the material growth and processing technology. reprint
 
435.  Very Long Wavelength Infrared Type-II Detectors Operating at 80K
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park
Applied Physics Letters 77 (11)-- September 11, 2000
We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T = 80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc = 17  μm showed a peak responsivity of about 100 mA/W at T = 80  K. Devices with 50% cutoff wavelengths up to λc = 22  μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths. reprint
 
436.  III-Nitride Wide Bandgap Semiconductors: A Survey of the Current Status and Future Trends of the Material and Device technology
P. Kung and M. Razeghi
Opto-Electronics Review 8 (3)-- September 1, 2000
During the past decade, group III - Nitride wide bandgap semiconductors have become the focus of extremely intensive reearch because of their exceptional physical properties and their high potential for use in countless numbers of applications. Nearly all aspects have been investigated, from the fundamental physical understanding of these materials to the development of the fabrication technology and demonstration of commercial devices. The purpose of this paper is to review the physical properties of III-Nitrides, their areas of application, the current status of the material technology (AlN, AlGaN, GaN, GaInN) including synthesis and processing. The state-of-the-art of III-Nitride material quality, as well as the devices which have been demonstrated, including electronic devices, AlGaN ultraviolet photoconductors, ultraviolet photodiodes, visible light emitting diodes (LEDs) and ultraviolet - blue laser diodes, will also be presented.
 
437.  Quantum Well Infrared Photodetectors (3 - 20 μm) Focal Plane Arrays: Monolithic Integration with Si-based Readout-integrated Circuitry for Low Cost and High Performance
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G. J. Brown, and Y.S. Park
-- July 30, 2000
 
438.  Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for Ultraviolet Photodetector Applications
M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz, and F. Shahedipour
-- May 1, 2000
 
439.  High Power InAsSb/InAsSbP Electrical Injection Laser Diodes Emitting Between 3—5 μm
B. Lane, S. Tong, J. Diaz, Z. Wu, and M. Razeghi
-- May 1, 2000
 
440.  The Development of Nitride-based UV Photodetector
D. Walker and M. Razeghi
-- March 1, 2000
 
441.  Growth and Characterization of Very Long Wavelength Type-II Infrared Detectors
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, W. Mitchel, and A. Saxler
SPIE Conference, San Jose, CA, -- January 26, 2000
We report on the growth and characterization of type-II IR detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50 percent cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90 percent-10 percent cut-off energy width of the responsivity is only 17 meV which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates. reprint
 
442.  Growth and Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared Range
H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche
SPIE Conference, San Jose, CA, -- January 26, 2000
Growth and characterization of type-II detectors for mid-IR wavelength range is presented. The device has a p-i-n structure is designed to operate in the non-equilibrium mode with low tunneling current. The active layer is a short period InAs/GaSb superlattice. Wider bandgap p-type AlSb and n-type InAs layers are used to facilitate the extraction of both electronics and holes from the active layer for the first time. The performance of these devices were compared to the performance of devices grown at the same condition, but without the AlSb barrier layers. The processed devices with the AlSb barrier show a peak responsivity of about 1.2 A/W with Johnson noise limited detectivity of 1.1 X 1011 cm·Hz½/W at 8 μm at 80 K at zero bias. The details of the modeling, growth, and characterizations will be presented. reprint
 
443.  High-responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
M. Erdtmann, A. Matlis, C. Jelen, M. Razeghi, and G. Brown
SPIE Conference, San Jose, CA, -- January 26, 2000
We have studied the dependence of the well doping density in n-type GaInAs/InP quantum well IR photodetectors (QWIPs) grown by low-pressure metalorganic chemical vapor deposition. Three identical GaInAs/InP QWIP structures were grown with well sheet carrier densities of 1x1011 cm-2, 3x1011 cm-2, and 10x1011 cm-2; all three samples had very sharp spectral response at λ equals 9.0 μm. We find that there is a large sensitivity of responsivity, dark current, noise current, and detectivity with the well doping density. Measurements revealed that the lowest-doped samples had an extremely low responsivity relative to the doping concentration while the highest-doped sample had an excessively high dark current relative to doping. The middle-doped sample yielded the optimal results. This QWIP had a responsivity of 33.2 A/W and operated with a detectivity of 3.5x1010 cm·Hz½·W-1 at a bias of 0.75 V and temperature of 80 K. This responsivity is the highest value reported for any QWIP in the (lambda) equals 8-9 &mus;m range. Analysis is also presented explaining the dependence of the measured QWIP parameters to well doping density. reprint
 
444.  Growth and Optimization of GaInAsP/InP Material System for Quantum Well Infrared Photodetector Applications
M. Erdtmann, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, and G. Brown
SPIE Conference, San Jose, CA, -- January 26, 2000
Multi-quantum well structures of GaxIn1-xAsyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 μm)/InP, and Ga0.27In0.73As0.57P0.43 (1.3 μm))/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 micrometers , and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition. reprint
 
445.  Solar-Blind AlxGa1-xN p-i-n Photodetectors grown on LEO and non-LEO GaN
P. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. Diaz, C. Jelen, and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 3948, pp. 265 -- January 26, 2000
The III-Nitride material system is an excellent candidate for UV photodetector applications due to its wide, direct bandgaps and robust material nature. However, despite many inherent material advantages, the III-Nitride material system typically suffers from a large number of extended defects which degrade material quality and device performance. One technique aimed at reducing defect densities in these materials is lateral epitaxial overgrowth (LEO). In this work, we present a preliminary comparison between AlGaN UV, solar-blind p-i-n photodiodes fabricated form LEO GaN and non-LEO GaN. Improvements in both responsivity and rejection ratio are observed, however, further device improvements are necessary. For these, we focus on the optimization of the p- i-n structure and a reduction in contact resistivity to p- GaN and p-AlGaN layers. By improving the structure of the device, GaN p-i-n photodiodes were fabricated and demonstrate 86 percent internal quantum efficiency at 362 nm and a peak to visible rejection ratio of 105. Contact treatments have reduced the contact resistivity to p-GaN and p-AlGaN by over one order of magnitude form our previous results. reprint
 
446.  LEO of III-Nitride on Al2O3 and Si Substrates
M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler
SPIE Conference, San Jose, CA, -- January 26, 2000
Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously. reprint
 
447.  Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell
SPIE Conference, San Jose, CA, -- January 26, 2000
Femtosecond nonlinear optical techniques have been employed in the study of carrier dynamics and transport in UV detector materials. Visible femtosecond pulses derived from the signal beam of a 250 kHz regenerative amplifier-pumped optical parametric amplifier were frequency doubled to obtain pulses tunable from 250 nm to 375 nm. Time-resolved reflectivity experiments indicate that the room-temperature carrier lifetime in GaN grown by double lateral epitaxial overgrowth is about 3 times longer than that of GaN grown on sapphire without benefit of this technique. The electron velocity-field characteristics and saturation velocity in GaN have been obtained form time-resolved studies of electroabsorption in a GaN p-i-n diode. The peak steady- state velocity of 1.9x107 cm/s in this device occurs at 225 kV/cm. Time-resolved transmission measurements have been used to monitor ultrafast carrier relaxation phenomena in a thin AlGaN layer with bandgap in the solar blind region of the spectrum. Excitation intensity and wavelength dependent studies of the photoinduced bleaching decays suggest that they are primarily governed by trapping in a high density of sub-bandgap defect levels. reprint
 
448.  Solar-blind AlGaN photodiodes with very low cutoff wavelength
D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X.H. Zhang, and M. Razeghi
Applied Physics Letters 76 (4)-- January 24, 2000
We report the fabrication and characterization of AlxGa1–xN photodiodes (x~0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for –5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. reprint
 
449.  Tl incorporation in InSb and lattice contraction of In1-xTlxSb
J.J. Lee and M. Razeghi
Applied Physics Letters 76 (3)-- January 17, 2000
Ternary In1−xTlxSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In1−xTlxSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In1−xTlxSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In1−xTlxSb differs from that of other group III impurities in III antimonides. reprint
 
450.  Advanced Semiconductor Lasers in the 3—10 μm Wavelength Range
M. Razeghi
-- January 1, 2000
 

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