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Page 18 of 19: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >> Next (475 Items)
| 426. | A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical vapor deposition
C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P. Dravid
Journal of Applied Physics 76 (10)-- November 15, 1994
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| 427. | Theoretical Investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
H.J. Yi, I. Eliashevich, J. Diaz, L.J. Wang, and M. Razeghi
IEEE/LEOS Photonics East Conference, Boston, MA; Proceedings, Vol. 2, SL 13.4-- October 31, 1994
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| 428. | Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
J. Diaz, I. Eliashevich, H.J. Yi, L.J. Wang, and M. Razeghi
IEEE/LEOS Photonics East Conference, Boston, MA; Proceedings, Vol. 2, SL 13.3-- October 31, 1994
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| 429. | Theoretical investigation of minority carrier leakage of high-power 0.8 祄 InGaAsP/InGaP/GaAs laser diodes
J. Diaz, I. Eliashevich, H.J. Yi, M. Stanton, and M. Razeghi
Applied Physics Letters 65 (18)-- October 31, 1994
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| 430. | Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells
W. C. Mitchel, G.J. Brown, I. Lo, S. Elhamri, M. Aboujja, K. Ravindran, R.S. Newrock, M. Razeghi, and X. He
Applied Physics Letters 65 (12)-- September 19, 1994
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| 431. | Intersubband hole absorption in GaAs-GaInP Quantum Wells grown by Gas Source Molecular Beam Epitaxy
J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi with G. Brown and S.M. Hegde (Wright Laboratory)
Applied Physics Letters 65 (9)-- August 29, 1994
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| 432. | High-power InGaAsP/GaAs 0.8 祄 laser diodes and peculiarities of operational characteristics
J. Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi
Applied Physics Letters 65 (8)-- August 22, 1994
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| 433. | On the Description of the Collision Terms in Three-Valley Hydrodynamic Models for GaAs Device Modeling
C. Besikci and M. Razeghi
IEEE Transactions on Electron Devices 41 (8)-- August 1, 1994
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| 434. | Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical vapor deposition
J. Diaz, H.J. Yi, M. Erdtmann, X. He, E. Kolev, D. Garbuzov, E. Bigan, and M. Razeghi
Journal of Applied Physics 76 (2)-- July 15, 1994
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| 435. | Thermal stability of GaN thin films grown on (0001) Al2O3, (0112) Al2O3 and (0001)Si 6H-SiC substrates
C.J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D.K. Gaskill
Journal of Applied Physics 76 (1)-- July 1, 1994
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| 436. | High-power laser diodes based on InGaAsP alloys
M. Razeghi
Nature 369-- June 23, 1994
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| 437. | Electron Transport Properties of Ga[0.51]In[0.49]P for Device Applications
C. Besikci and M. Razeghi
IEEE Transactions on Electron Devices 41 (6)-- June 1, 1994
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| 438. | Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
P. Kung, C.J. Sun, A. Saxler, H. Ohsato, and M. Razeghi
Journal of Applied Physics 75 (9)-- May 1, 1994
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| 439. | A Crystallographic Model of (00*1) Aluminum Nitride Epitaxial Thin Film Growth on (00*1) Sapphire Substrate
C.J. Sun, P. Kung, A. Saxler, H. Ohsato, M. Razeghi, and K. Haritos
Journal of Applied Physics 75 (8)-- April 15, 1994
A direct comparison of the physical properties of GaN thin films is made as a function of the choice of substrate orientations. Gallium nitride single crystals were grown on (0001) and (011-bar 2) sapphire substrates by metalorganic chemical vapor deposition. Better crystallinity with fine ridgelike facets is obtained on the (011-bar 2) sapphire. Also lower carrier concentration and higher mobilities indicate both lower nitrogen vacancies and less oxygen incorporation on the (011-bar 2) sapphire. The results of this study show better physical properties of GaN thin films achieved on (011-bar 2) sapphire. ...[Visit Journal]
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| 440. | Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrat
Y.H. Choi, P. Staveteig, E. Bigan, and M. Razeghi
Journal of Applied Physics 75 (6)-- March 15, 1994
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| 441. | Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy
C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry
Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994
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| 442. | InGaP/InGaAsP/GaAs 0.808 祄 separate confinement laser diodes grown by metalorganic chemical vapor deposition
J. Diaz, I. Eliashevich, K. Mobarhan, L.J. Wang, D.Z. Garbuzov, and M. Razeghi
IEEE Photonics Technology Letters 6 (2)-- February 1, 1994
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| 443. | Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition
P.T. Staveteig, Y.H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi
Applied Physics Letters 64 (4)-- January 24, 1994
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| 444. | InTlSb alloys for infrared detection
E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi
Proceedings, SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Vol. 2145-- January 24, 1994
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| 445. | High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates
A. Saxler, P. Kung, C.J. Sun, E. Bigan and M. Razegh
Applied Physics Letters 64 (3)-- January 17, 1994
In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00路1) sapphire exhibited a better crystalline quality than that grown on (01路2) sapphire. An x-ray rocking curve of AlN on (00路1) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01路2) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00路1) Al2O3 was about 197 nm. ...[Visit Journal]
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| 446. | AlxGa1-xN Grown on (00*1) and (01*2) Sapphire
C.J. Sun, P. Kung, A. Saxler, H. Ohsato, and M. Razeghi
Proceedings of the 5th International Conference on Silicon Carbide and Related Materials, Washington, DC-- November 1, 1993
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| 447. | The Effects of V/III Ratio on Optical, Electrical and Structural Properties of InAs0.3Sb0.7Grown by LP-MOCVD
Y.H. Choi, G. Labeyrie, P.T. Staveteig, E. Bigan, and M. Razeghi
Electrochemical Society Conference, New Orleans, LA; Proceedings, 94-5, Long Wavelength Infrared Detectors and Arrays: Physics and Applications, F. Radpour and V.R. McCrary (eds.)-- October 15, 1993
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| 448. | In1- x TlxSb for Long-Wavelength Infrared Photodetectors
Y.H. Choi, P.T. Staveteig, E. Bigan, and M. Razeghi
Electrochemical Society Conference, New Orleans, LA; Proceedings, Vol. 94-5-- October 10, 1993
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| 449. | Comparison of the Physical Properties of GaN Thin Films Deposited on (0112) and (0001) Sapphire Substrates
C.J. Sun and M. Razeghi
Applied Physics Letters 63 (7)-- August 16, 1993
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| 450. | Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition
S.N. Song, J.B. Ketterson, Y.H. Choi, R. Sudharsanan, and M. Razeghi
Applied Physics Letters 63 (7)-- August 16, 1993
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