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Page 15 of 19: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >> Next (475 Items)
| 351. | InAsSbP/InAsSb/InAs Diode Lasers Emitting at 3.2 µm Grown by Metalorganic Chemical Vapor Deposition
D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H.J. Yi, and M. Razeghi
IEEE Photonics Technology Letters 9 (2)-- February 1, 1997
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| 352. | Compressively-strained multiple quantum well InAsSb lasers emitting at 3.6 µm grown by metal-organic chemical vapor deposition
B. Lane, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, and M. Razeghi
Applied Physics Letters 70 (4)-- January 27, 1997
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| 353. | Aluminum free GaInP/GaAs Quantum Well Infrared Photodetectors for Long Wavelength Detection
C. Jelen, S. Slivken, J. Hoff, M. Razeghi, and G. Brown
Applied Physics Letters 70 (3)-- January 20, 1997
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| 354. | InAsSbP/InAsSb/InAs Laser Diodes l = 3.2 µm) Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
J. Diaz, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi
Applied Physics Letters 70 (1)-- January 6, 1997
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| 355. | Infrared Imaging Arrays Using Advanced III-V Materials and technology
M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseni, J.J. Lee, J. Wojkowski, K.S. Kim, H.I. Jeon, and J. X
Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain; Proceedings-- January 6, 1997
Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system ...[Visit Journal]
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| 356. | Epitaxial growth models of hexagonal and cubic GaN on (100) Si substrates
H. Ohsato, T. Kato, M. Razeghi, and T. Okuda
Bulletin of the Ceramic Society of Japan, Ceramics Japan-- January 1, 1997
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| 357. | Morphology of Twinned GaN Grown on (11.0) Sapphire Substrates
T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda
Solid-State Electronics 41 (2)-- January 1, 1997
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| 358. | Simultaneous growth of two different oriented GaN epilayers on (11.0) sapphire (I) morphology and orientation
T. Kato, H. Ohsato, T. Okuda, P. Kung, A. Saxler, C.J. Sun, and M. Razeghi
Journal of Crystal Growth 173-- January 1, 1997
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| 359. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density less than 10^7cm^-2
P. Kung, X. Zhang, A. Saxler, D. Walker, M. Razeghi, W. Qian, and V.P. Dravid
Journal of European Ceramics Society 17-- January 1, 1997
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| 360. | Gas Source Molecular Beam Epitaxy Growth and Characterization of Ga0.51In0.49P/InxGa1-x As/GaAs Modulation-doped Field-effect Transistor Structures
C. Besikci, Y. Civan, S. Ozder, O. Sen, C. Jelen, S. Slivken, and M. Razeghi
Semiconductor Science Technology 12-- January 1, 1997
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| 361. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
M. Razeghi, J. Diaz, H.J. Yi, D. Wu, B. Lane, A. Rybaltowski, Y. Xiao, and H. Jeon
Materials Research Society Symposium, "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings 450-- December 2, 1996
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| 362. | GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging
C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi
Materials Research Society Symposium, "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings 450-- December 2, 1996
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| 363. | InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al2O3 Substrates
E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. Mitchel, and M. Ahoujja
Materials Research Society Symposium, "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings 450-- December 2, 1996
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| 364. | High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates
A. Saxler, M.A. Capano, W.C. Mitchel, P. Kung, X. Zhang, D. Walker and M. Razeghi
Materials Research Society Symposium, "III-V Nitrides"; Proceedings 449-- December 2, 1996
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| 365. | AlGaN Based Materials and Heterostructures
P. Kung, A. Saxler, D. Walker, X. Zhang, R. Lavado, K.S. Kim, and M. Razeghi
Materials Research Society Symposium, "III-V Nitrides"; Proceedings 449-- December 2, 1996
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| 366. | Observation of Room Temperature Surface-Emitting Stimulated Emission from GaN:Ge by Optical pumping
X. Zhang, P. Kung, A. Saxler, D. Walker, and M. Razeghi
Journal of Applied Physics 80 (11)-- December 1, 1996
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| 367. | Optical losses of Al-free lasers for l = 0.808 and 0.98 µm
H. Yi, J. Diaz, B. Lane, and M. Razeghi
Applied Physics Letters 69 (20)-- November 11, 1996
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| 368. | Effect of the spin split-off band on optical absorption in p-type Ga1 xInxAsyP1-y quantum-well infrared detectors
J.R. Hoff, M. Razeghi and G. Brown
Physical Review B 54 (15)-- October 15, 1996
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| 369. | Recent advances in III-Nitride materials, characterization and device applications
M. Razeghi, X. Zhang, P. Kung, A. Saxler, D. Walker, K.Y. Lim, and K.S. Kim
SPIE Conference: Solid State Crystals in Optoelectronics and Semiconductor Technology; Proceedings 3179-- October 7, 1996
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| 370. | Metalorganic chemical vapor deposition of monocrystalline GaN thin films on ß-LiGaO2substrates
P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, and M. Razeghi
Applied Physics Letters 69 (14)-- September 30, 1996
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| 371. | III-V interband and intraband far-infrared detectors
M. Razeghi, C. Jelen, S. Slivken and J. Hoff
23rd International Symposium on Compound Semiconductors, St. Petersburg, Russia; Proceedings 155 (5)-- September 23, 1996
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| 372. | Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition
S. Kim, M. Erdtmann, D. Wu, E. Kaas, H. Yi, J. Diaz, and M. Razeghi
Applied Physics Letters 69 (11)-- September 9, 1996
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| 373. | Room Temperature Operation of InTlSb Infrared Photodetectors on GaAs
J.D. Kim, E. Michel, S. Park, J. Xu, S. Javadpour and M. Razegh
Applied Physics Letters 69 (3)-- August 15, 1996
Long-wavelength InTlSb photodetectors operating at room temperature are reported. The photo- detectors were grown on (100) semi-insulating GaAs substrates by low-pressure metalorganic chemical vapor deposition. Photoresponse of InTlSb photodetectors is observed up to 11 µm at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a detectivity of about 7.64 × 108 cm·Hz½/W. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10–50 ns at 77 K. ...[Visit Journal]
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| 374. | Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition
X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi
Electronic Letters 32 (17)-- August 15, 1996
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| 375. | Demonstration of an Electronic Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor
X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi
International Conference on Solid State Devices and Materials (SSDM '96), Yokohama, Japan; Proceedings-- August 1, 1996
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