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Page 13 of 19: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >> Next (475 Items)
| 301. | Noise performance of InGaAs/InP quantum well infrared photodetectors
C. Jelen, S. Slivken, T. David, M. Razeghi and G. J. Brown
IEEE Journal of Quantum Electronics 34 (7)-- July 7, 1998
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| 302. | Solar blind GaN p-i-n photodiodes
D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi
Applied Physics Letters 72 (25)-- June 22, 1998
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| 303. | 8.5 μm Room Temperature Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
S. Slivken and M. Razeghi
SPIE Conference, San Jose, CA, -- January 28, 1998
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| 304. | Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition
M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, A. Rybaltowski, Y. Xiao, H.J. Yi and J. Diaz
SPIE Conference, San Jose, CA, Vol. 3284, pp. 113-- January 28, 1998
Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13 degrees and 20 degrees for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation. ...[Visit Journal]
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| 305. | Narrow gap semiconductor photodiodes
A. Rogaski and M. Razeghi
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 306. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
P. Kung, X. Zhang, D. Walker, A. Saxler, and M. Razeghi
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 307. | Responsivity and Noise Performance of InGaAs/InP Quantum Well Infrared Photodetectors
C. Jelen, S. Slivken, T. David, G. Brown, and M. Razeghi
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 308. | Growth and characterization of InAs/GaSb type II superlattices for long-wavelength infrared detectors
H. Mohseni, E. Michel, M. Razeghi, W. Mitchel, and G. Brown
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 309. | Electrical Transport Properties of Highly Doped N-type GaN Epilayers
H.J. Lee, M.G. Cheong, E.K. Suh, and M. Razeghi
SPIE Conference, San Jose, CA, "Materials and Devices III"; Proceedings 3287-- January 28, 1998
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| 310. | New Developments in III-Nitride Material and Device Applications
M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, K.S. Kim, H.R. Vydyanath, J. Solomon, M. Ahoujja, and W.C. Mitchel
Physics of Semiconductor Devices, Vol. 1, V. Kumar and S.K. Agarwal eds.,Narosa Publishing House, New Delhi, India,-- January 1, 1998
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| 311. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
M. Razeghi
Physics of Semiconductor Devices, Vol. 2 (V. Kumar and S.K. Agarwal eds.), Narosa Publishing House, New Delhi, India-- January 1, 1998
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| 312. | GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
P. Kung, A. Saxler, D. Walker, A. Rybaltowski, X. Zhang, J. Diaz, and M. Razeghi
MRS Internet Journal of Nitride Semiconductor Research 3 (1)-- January 1, 1998
We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 µm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Omega at 300 and 79 K, respectively. ...[Visit Journal]
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| 313. | Simultaneous growth of two differently oriented GaN epilayers on (11.0) sapphire (II) a growth model of (00.1) and (10.0) GaN
T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda
Journal of Crystal Growth 183-- January 1, 1998
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| 314. | Recent advances in Sb-based materials for uncooled infrared photodetectors
E. Michel and M. Razeghi
Opto-Electronics Review 6 (1)-- January 1, 1998
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| 315. | Exploration of InSbBi for uncooled long-wavelength infrared photodetectors
J.J. Lee and M. Razeghi
Opto-Electronics Review 6 (1)-- January 1, 1998
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| 316. | High-Power Al-free InGaAsP/GaAs Near-Infrared Semiconductor Lasers
M. Razeghi and H. Yi
Opto-Electronics Review 6 (2)-- January 1, 1998
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| 317. | InP-based Multi-Spectral Quantum Well Infrared Photodetectors
C. Jelen and M. Razeghi
International Semiconductor Device Research Symposium (ISDRS ‘97), Charlottesville, VA; Proceedings-- December 11, 1997
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| 318. | Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
S. Slivken and M. Razeghi
International Semiconductor Device Research Symposium (ISDRS ‘97), Charlottesville, VA; Proceedings-- December 11, 1997
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| 319. | Comparison of Trimethylgallium and Triethylgallium for the Growth of GaN
A. Saxler, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, W. Mitchel, and H.R. Vydyanath
Applied Physics Letters 71 (22)-- December 1, 1997
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| 320. | Long-term reliability of Al-free InGaAsP/GaAs l = 808 nm) lasers at high-power high-temperature operation
J. Diaz, H. Yi, M. Razeghi and G.T. Burnham
Applied Physics Letters 71 (21)-- November 24, 1997
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| 321. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
M. Razeghi
SPIE Conference, Dallas, TX, "Design and Manufacturing of WDM Devices"; Proceedings 3234-- November 4, 1997
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| 322. | Gas-Source Molecular Beam Epitaxy Growth of 8.5 µm Quantum Cascade Laser
S. Slivken, C. Jelen, A. Rybaltowski, J. Diaz and M. Razeghi
Applied Physics Letters 71 (18)-- November 1, 1997
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| 323. | High power InAsSb/InPAsSb/InAs mid-infrared lasers
A. Rybaltowski, Y. Xiao, D. Wu, B. Lane, H. Yi, H. Feng, J. Diaz, and M. Razeghi
Applied Physics Letters 71 (17)-- October 27, 1997
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| 324. | “Long-Wavelength Infrared Photodetectors Based on InSbBi Grown on GaAs Substrates
J.J. Lee, J.D. Kim, and M. Razeghi
Applied Physics Letters 71 (16)-- October 20, 1997
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| 325. | High-Quality Quantum Cascade Lasers Grown by GSMBE
S. Slivken, C. Jelen, J. Diaz, and M. Razeghi
LEOS Newsletter 11 (5)-- October 1, 1997
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