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| 276. | AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
D. Walker, P. Kung, P. Sandvik, J. Wu, M. Hamilton, I.H. Lee, J. Diaz, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 277. | Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
A. Saxler, M. Ahoujja, W.C. Mitchel, P. Kung, D. Walker, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 278. | Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
P. Kung, D. Walker, P. Sandvik, M. Hamilton, J. Diaz, I.H. Lee and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 279. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
J.D. Kim, H. Mohseni, J.S. Wojkowski, J.J. Lee and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 280. | Demonstration of InAsSb/AlInSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 um Wavelength Range
J.S. Wojkowski, H. Mohseni, J.D. Kim, and M. Razeghi
SPIE Conference, San Jose, CA, -- January 27, 1999
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| 281. | Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
S. Kim, M. Erdtmann, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 282. | Internal Stress Around Micropipes in 6H-SiC Substrates
H. Ohsato, T. Kato, T. Okuda and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 283. | Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
P. Kung, D. Walker, M. Hamilton, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (4)-- January 25, 1999
We report the lateral epitaxial overgrowth of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The lateral epitaxial overgrowth on Si substrates was possible after achieving quasi-monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy, and atomic force microscopy were used to assess the quality of the lateral epitaxial overgrown films. Lateral growth rates more than five times as high as vertical growth rates were achieved for both lateral epitaxial overgrowths of GaN on sapphire and silicon substrates. ...[Visit Journal]
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| 284. | Relaxation kinetics in quantum cascade laser
S. Slivken, V. Litvinov, M. Razeghi, and J.R. Meyer
Journal of Applied Physics 85 (2)-- January 15, 1999
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| 285. | High Temperature Continuous Wave Operation of ~8 um Quantum Cascade Lasers
S. Slivken, A. Matlis, C. Jelen, A. Rybaltowski, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (2)-- January 11, 1999
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| 286. | Band-gap narrowing and potential fluctuation in Si-doped GaN
I.H. Lee, J.J. Lee, P. Kung, F.J. Sanchez, and M. Razeghi
Applied Physics Letters 74 (1)-- January 4, 1999
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| 287. | Interface-induced Suppression of the Auger Recombination in Type-II InAs/GaSb Superlattices
H. Mohseni, V.I. Litvinov and M. Razeghi
Physical Review B 58 (23)-- December 15, 1998
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| 288. | Current Status and Future Trends of Infrared Detectors
M. Razeghi
Opto-Electronics Review 6 (3)-- December 1, 1998
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| 289. | Recent development in Sb-based MWIR interband laser diodes
D. Wu and M. Razeghi
Opto-Electronics Review 6 (3)-- December 1, 1998
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| 290. | Relaxation kinetics in mid-infrared quantum cascade lasers
S. Slivken, V.I. Litvinov, M. Razeghi, and J.R. Meyer
Opto-Electronics Review, 6 (3)-- December 1, 1998
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| 291. | Investigation of InAsSb Infrared Photodetectors for Near Room Temperature Operation
J.D. Kim and M. Razeghi
Opto-Electronics Review 6 (3)-- December 1, 1998
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| 292. | Low Threshold Quantum Cascade Lasers Grown by GSMBE
M. Razeghi, S. Slivken, A. Matlis, A. Rybaltowski, C. Jelen, and J. Diaz
LEOS Newsletter 12 (6)-- December 1, 1998
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| 293. | Development of High-performance III-Nitride-based Semiconductor Devices
M. Razeghi, P. Kung, D. Walker, M. Hamilton, and P. Sandvik
International Symposium on the Physics of Semiconductors and Applications (ISPSA-98), Seoul, Korea; Proceedings-- November 6, 1998
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| 294. | Growth and Characterization of InAs/GaSb Type-II Superlattice for 8-12 um Room Temperature Detectors
H. Mohseni and M. Razeghi
Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays, Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21)-- November 5, 1998
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| 295. | Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
S. Kim and M. Razeghi
Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays, Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21)-- November 5, 1998
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| 296. | High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates
M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz
SPIE International Conference on Solid State Crystals, Zakopane, Poland; Proceedings 3725-- October 12, 1998
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| 297. | Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors
M. Razeghi, J. Wojkowski, J.D. Kim, H. Mohseni and J.J. Lee
Symposium on Compound Semiconductors, Nara, Japan; Proceedings-- October 12, 1998
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| 298. | InGaAlAs/InP Quantum Well Infrared Photodetectors for 8-20 µm Wavelengths
C. Jelen, S. Slivken, V. Guzman, M. Razeghi, and G. Brown
IEEE Journal of Quantum Electronics 34 (10)-- October 1, 1998
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| 299. | Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector
S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi
Applied Physics Letters 73 (7)-- August 17, 1998
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| 300. | Room temperature operation of 8-12 µm InSbBi infrared photodetectors on GaAs substrates
J.J. Lee, J.D. Kim, and M. Razeghi
Applied Physics Letters 73 (5)-- August 3, 1998
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