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Page 11 of 19: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >> Next (475 Items)
| 251. | Solar-blind AlGaN photodiodes with very low cutoff wavelength
D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X.H. Zhang, and M. Razeghi
Applied Physics Letters 76 (4)-- January 24, 2000
We report the fabrication and characterization of AlxGa1–xN photodiodes (x~0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for –5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. ...[Visit Journal]
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| 252. | Tl incorporation in InSb and lattice contraction of In1-xTlxSb
J.J. Lee and M. Razeghi
Applied Physics Letters 76 (3)-- January 17, 2000
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| 253. | Advanced Semiconductor Lasers in the 3-10 um Wavelength Range
M. Razeghi
International Journal of High Speed Electronics and Systems 10 (1-- January 1, 2000
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| 254. | Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
M. Razeghi, P. Kung, P. Sandvik, X. Zhang, K. Mi, D. Walker, V. Kumar, and J. Diaz
10th International Workshop on the Physics of Semiconductor Devices (IWPSD-99), New Delhi, India; Proceedings-- December 14, 1999
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| 255. | Pulse Autocorrelation Measurements Based on Two- and Three-Photon Conductivity in a GaN Photodiode
A. Streltsov, K.D. Moll, A. Gaeta, P. Kung, D. Walker, and M. Razeghi
Applied Physics Letters 75 (24)-- December 13, 1999
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| 256. | Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication
M. Razeghi
special issue of Microelectronics Journal 30 (10)-- October 1, 1999
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| 257. | Uncooled InAs/GaSb Type-II infrared detectors grown on GaAs substrate for the 8-12 um atmospheric window
H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel
IEEE Journal of Quantum Electronics 35 (7)-- July 1, 1999
The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of λc=8 μm and a peak detectivity of 1.2×108 cm·Hz½/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers. However, the R0A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers. These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays ...[Visit Journal]
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| 258. | Exploration of Novel InSbBi Alloy for Uncooled Infrared Photodetector Applications
J.J. Lee, J.D. Kim, and M. Razeghi
special issue of the Journal of the Korean Physical Society 35-- July 1, 1999
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| 259. | Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors
S. Kim, M. Erdtmann, and M. Razeghi
special issue of the Journal of the Korean Physical Society 35-- July 1, 1999
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| 260. | Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (808 nm) Laser Diodes
H.J. Yi and M. Razeghi
special issue of the Journal of the Korean Physical Society 35-- July 1, 1999
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| 261. | InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 um grown by metal-organic chemical vapor deposition
B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (23)-- June 7, 1999
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| 262. | Development of High-performance III-Nitride-based Semiconductor Devices
M. Razeghi, P. Kung, D. Walker, E. Monroy, M. Hamilton, and P. Sandvik
special issue of the Journal of the Korean Physical Society, 34-- June 1, 1999
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| 263. | Low-Threshold 7.3 um Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
S. Slivken, A. Matlis, A. Rybaltowski, Z. Wu and M. Razeghi
Applied Physics Letters 74 (19)-- May 19, 1999
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| 264. | Exciton localization in group-III nitride quantum wells
V.I. Litvinov and M. Razeghi
Physical Review B 59 (15)-- May 15, 1999
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| 265. | Aluminum gallium nitride short-period superlattices doped with magnesium
A. Saxler, W.C. Mitchel, P. Kung and M. Razeghi
Applied Physics Letters 74 (14)-- April 9, 1999
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| 266. | High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 um
D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi
Applied Physics Letters 74 (9)-- March 1, 1999
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| 267. | Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides
D.N. Hahn, G.T. Kiehne, G.K.L. Wong, J.B. Ketterson, P. Kung, A. Saxler and M. Razeghi
Journal of Applied Physics 85 (5)-- March 1, 1999
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| 268. | AlGaInAs/InP-based Quantum Well Infrared Photodetectors
C. Jelen and M. Razeghi
Opto-Electronics Review 7 (1)-- March 1, 1999
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| 269. | Novel InTlSb Alloy for Uncooled Long-Wavelength Infrared Photodetectors
J.J. Lee, J.D. Kim, and M. Razeghi
Opto-Electronics Review 7 (1)-- March 1, 1999
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| 270. | Recent Advance in Semiconductor Mid-Infrared Lasers Emitting at 3-12 um
M. Razeghi
Opto-Electronics Review 7 (1)-- March 1, 1999
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| 271. | High-quality visible-blind AlGaN p-i-n photodiodes
E. Monroy, M. Hamilton, D. Walker, P. Kung, F.J. Sanchez, and M. Razeghi
Applied Physics Letters 74 (8)-- February 22, 1999
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| 272. | High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN
D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (5)-- February 1, 1999
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| 273. | Recent achievement in MIR high power injection laser diodes (3 to 5 um)
M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi
LEOS Newsletter 13 (1)-- February 1, 1999
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| 274. | Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices IV"; Proceedings 3629-- January 27, 1999
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| 275. | Multi-color 4-20 um In-P-based Quantum Well Infrared Photodetectors
C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi
SPIE Conference, San Jose, CA, -- January 27, 1999
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