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| 226. | Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
M. Erdtmann and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices VI"; Proceedings 4288-- January 22, 2001
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| 227. | High Performance Type-II InAs/GaSb Superlattice Photodiodes
H. Mohseni, Y. Wei, and M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices VI"; Proceedings 4288-- January 22, 2001
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| 228. | AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications
R. McClintock, P. Sandvik, K. Mi, F. Shahedipour, A. Yasan, C. Jelen, P. Kung, and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 4288, pp. 219-- January 22, 2001
There has been a growing interest for the development of solar blind ultraviolet (UV) photodetectors for use in a variety of applications, including early missile threat warning, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The AlxGa1-xN material system has emerged as the most promising approach for such devices. However, the control of the material quality and the device technology are still rather immature. We report here the metalorganic chemical vapor deposition, the n-type and the p-type doping of high quality AlxGa1-xN thin films on sapphire substrates over a wide range of Al concentration. ...[Visit Journal]
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| 229. | Novel Sb-based Alloys for Uncooled Infrared Photodetector Applications
M. Razeghi
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices VI"; Proceedings 4288-- January 22, 2001
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| 230. | Long-Wavelength Quantum Well Infrared Photodetectors
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino and Y.S. Park
Defense Science Journal 51 (1)-- January 1, 2001
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| 231. | Miniaturization: enabling technology for the new millennium
M. Razeghi and H. Mohseni
Opto-Electronics Review 9 (2)-- January 1, 2001
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| 232. | Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park
Infrared Physics and Technology 42 (3-5)-- January 1, 2001
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| 233. | AlxGa1-xN for Solar-Blind UV Detectors
P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi
Journal of Crystal Growth 231 (2001)-- January 1, 2001
We report on the metalorganic chemical vapor deposition of high quality AlGaN thin films on sapphire substrates over a wide range of Al concentrations. The quality of these AlGaN materials was verified through a demonstration of high performance visible and solar-blind UV p–i–n photodiodes with peak cutoff wavelengths ranging from 227 to 364 nm. External quantum efficiencies for these devices reached as high as 69% with over five orders rejection ratio from the peak to visible wavelengths. ...[Visit Journal]
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| 234. | Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
J.J. Lee and M. Razeghi
Journal of Crystal Growth 221 (1-4)-- December 1, 2000
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| 235. | High Power Electrically Injected Mid-Infrared Interband Lasers Grown by LP-MOCVD
B. Lane and M. Razeghi
Journal of Crystal Growth 221 (1-4)-- December 1, 2000
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| 236. | Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years
M. Razegh
IEEE Journal of Selected Topics in Quantum Electronics 6 (6)-- November 1, 2000
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| 237. | Low-threshold and high power (~9.0um) quantum cascade lasers operating at room temperature
A. Matlis, S. Slivken, A. Tahraoui, K.J. Luo, J. Diaz, Z. Wu, A. Rybaltowski, C. Jelen, and M. Razeghi
Applied Physics Letters 77 (12)-- September 18, 2000
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| 238. | Very Long Wavelength Infrared Type-II Detectors Operating at 80K
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park
Applied Physics Letters 77 (11)-- September 11, 2000
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| 239. | III-Nitride Wide Bandgap Semiconductors: A Survey of the Current Status and Future Trends of the Material and Device technology
P. Kung and M. Razeghi
Opto-Electronics Review 8 (3)-- September 1, 2000
During the past decade, group III - Nitride wide bandgap semiconductors have become the focus of extremely intensive reearch because of their exceptional physical properties and their high potential for use in countless numbers of applications. Nearly all aspects have been investigated, from the fundamental physical understanding of these materials to the development of the fabrication technology and demonstration of commercial devices. The purpose of this paper is to review the physical properties of III-Nitrides, their areas of application, the current status of the material technology (AlN, AlGaN, GaN, GaInN) including synthesis and processing. The state-of-the-art of III-Nitride material quality, as well as the devices which have been demonstrated, including electronic devices, AlGaN ultraviolet photoconductors, ultraviolet photodiodes, visible light emitting diodes (LEDs) and ultraviolet - blue laser diodes, will also be presented. ...[Visit Journal]
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| 240. | Quantum Well Infrared Photodetectors (3 - 20 um) Focal Plane Arrays: Monolithic Integration with Si-based Readout-integrated Circuitry for Low Cost and High Performance
M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G. J. Brown, and Y.S. Park
SPIE Conference, Infrared Technology and Applications XXVI, San Diego, CA, -- July 30, 2000
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| 241. | Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for Ultraviolet Photodetector Applications
M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz, and F. Shahedipour
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. B74 (1-3)-- May 1, 2000
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| 242. | High Power InAsSb/InAsSbP Electrical Injection Laser Diodes Emitting Between 3-5 um
B. Lane, S. Tong, J. Diaz, Z. Wu, and M. Razeghi
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. B74 (1-3)-- May 1, 2000
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| 243. | The Development of Nitride-based UV Photodetector
D. Walker and M. Razeghi
Opto-Electronics Review 8 (1)-- March 1, 2000
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| 244. | Growth and Characterization of Very Long Wavelength Type-II Infrared Detectors
H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, W. Mitchel, and A. Saxler
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 245. | Growth and Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared Range
H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 246. | High-responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
M. Erdtmann, A. Matlis, C. Jelen, M. Razeghi, and G. Brown
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 247. | Growth and Optimization of GaInAsP/InP Material System for Quantum Well Infrared Photodetector Applications
M. Erdtmann, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, and G. Brown
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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| 248. | Solar-Blind AlxGa1-xN p-i-n Photodetectors grown on LEO and non-LEO GaN
P. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. Diaz, C. Jelen, and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 3948, pp. 265 -- January 26, 2000
The III-Nitride material system is an excellent candidate for UV photodetector applications due to its wide, direct bandgaps and robust material nature. However, despite many inherent material advantages, the III-Nitride material system typically suffers from a large number of extended defects which degrade material quality and device performance. One technique aimed at reducing defect densities in these materials is lateral epitaxial overgrowth (LEO). In this work, we present a preliminary comparison between AlGaN UV, solar-blind p-i-n photodiodes fabricated form LEO GaN and non-LEO GaN. Improvements in both responsivity and rejection ratio are observed, however, further device improvements are necessary. For these, we focus on the optimization of the p- i-n structure and a reduction in contact resistivity to p- GaN and p-AlGaN layers. By improving the structure of the device, GaN p-i-n photodiodes were fabricated and demonstrate 86 percent internal quantum efficiency at 362 nm and a peak to visible rejection ratio of 105. Contact treatments have reduced the contact resistivity to p-GaN and p-AlGaN by over one order of magnitude form our previous results. ...[Visit Journal]
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| 249. | LEO of III-Nitride on Al2O3 and Si Substrates
M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler
SPIE Conference, San Jose, CA, -- January 26, 2000
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| 250. | Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell
SPIE Conference, San Jose, CA, "Photodetectors: Materials and Devices V"; Proceedings 3948-- January 26, 2000
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