Center for Quantum Devices - Most Downloaded Journal Articles

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20.	Modeling of Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method and Interface Engineering Y. Wei and M. Razeghi Physical Review B, 69 (8)-- February 15, 2004 ...[Visit Journal] We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp3s* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of Ga_xIn_1-x type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality. [reprint (PDF)]
20.	High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices M. Razeghi; A. Haddadi; A.M. Hoang; G. Chen; S. Ramezani-Darvish; P. Bijjam Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040S (June 11, 2013)-- June 11, 2013 ...[Visit Journal] We report a bias selectable dual-band mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 μm active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR band. Under back-side illumination, a temperature evolution study of the MWIR detector's electro-optical performance found the 300 K background-limit with 2π field-of-view to be achieved below operating temperatures of 160 K, at which the temperature's 50% cutoff wavelength was 5.2 μm. The measured current reached the system limit of 0.1 pA at 110 K for 30 μm pixel-sized diodes. At 77 K, where the LWIR channel operated with a 50% cutoff wavelength at 11.2 μm, an LWIR selectivity of ∼17% was achieved in the MWIR wave band between 3 and 4.7 μm, making the detector highly selective. [reprint (PDF)]
20.	High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 μm WENJIA ZHOU,QUAN-YONG LU,DONG-HAI WU, STEVEN SLIVKEN, AND MANIJEH RAZEGHI OPTICS EXPRESS 27, 15776-15785-- May 20, 2019 ...[Visit Journal] We report a room-temperature eight-element phase-locked quantum cascade laser array emitting at 8 μm with a high continuous-wave power of 8.2 W and wall plug efficiency of 9.5%. The laser array operates primarily via the in-phase supermode and has single-mode emission with a side-mode suppression ratio of ~20 dB. The quantum cascade laser active region is based on a high differential gain (8.7 cm/kA) and low voltage defect (90 meV) design. A record high wall plug efficiency of 20.4% is achieved from a low loss buried ridge type single-element Fabry-Perot laser operating in pulsed mode at 20 °C. [reprint (PDF)]
20.	High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs_1-xSb_x/AlAs_1-xSb_x superlattices M. Razeghi, A. Haddadi, X. V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, A. Dehzangi Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190A -- May 20, 2016 ...[Visit Journal] We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs_1-xSb_x/AlAs_1-xSb_x on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ~1.8mm. For −50mV applied bias at 300 K the photodetector has dark current density of 9.6x10^-5 A/cm² and RxA of 285 Ω•cm², and it revealed a detectivity of 6.45x10¹⁰ cm•Hz^½/W. Dark current density reached to 1.3x10^-8 A/cm² at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x10¹² cm•Hz^½/W. [reprint (PDF)]
20.	Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) C. Bayram, J. Ott, K. T. Shiu, C. W. Cheng, Y. Zhu, J. Kim, D. K. Sadana, M. Razeghi Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93702F -- February 8, 2015 ...[Visit Journal] This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contributing to the “droop” behavior – a phenomenon defined as “the reduction in emitter efficiency as injection current increases”. The elimination of piezoelectric fields in GaN-based emitters as proposed in this work provide the potential for achieving a 100% internal efficiency and might lead to droopfree light emitting diodes. In addition, this work demonstrates co-integration of GaN emitters on cheap and scalable CMOS-compatible Si (100) substrate, which yields possibility of realizing a GaN laser diode uniquely – via forming mirrors along the naturally occurring cubic phase GaN-Si(100) cleavage planes. [reprint (PDF)]
20.	Room temperature terahertz semiconductor frequency comb Quanyong Lu, Feihu Wang, Donghai Wu, Steven Slivken & Manijeh Razeghi Nature Communications 10, 2403-- June 3, 2019 ...[Visit Journal] A terahertz (THz) frequency comb capable of high-resolution measurement will significantly advance THz technology application in spectroscopy, metrology and sensing. The recently developed cryogenic-cooled THz quantum cascade laser (QCL) comb has exhibited great potentials with high power and broadband spectrum. Here, we report a room temperature THz harmonic frequency comb in 2.2 to 3.3 THz based on difference-frequency generation from a mid-IR QCL. The THz comb is intracavity generated via down-converting a mid-IR comb with an integrated mid-IR single mode based on distributed-feedback grating without using external optical elements. The grating Bragg wavelength is largely detuned from the gain peak to suppress the grating dispersion and support the comb operation in the high gain spectral range. Multiheterodyne spectroscopy with multiple equally spaced lines by beating it with a reference Fabry-Pérot comb confirms the THz comb operation. This type of THz comb will find applications to room temperature chip-based THz spectroscopy. [reprint (PDF)]
20.	Novel Method for Reclaim/Reuse of Bulk GaN Substrates using Sacrifical ZnO Release Layers A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock & M. Razeghi Proc. SPIE 8987, Oxide-based Materials and Devices V, 898719-- April 2, 2014 ...[Visit Journal] Free-standing (0002)-oriented GaN substrates (f = 2”) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle. [reprint (PDF)]
20.	4.5 mW Operation of AlGaN-based 267 nm Deep-Ultraviolet Light-Emitting Diodes A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S.R. Darvish, P. Kung and M. Razeghi Applied Physics Letters, 83 (23)-- December 8, 2003 ...[Visit Journal] We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 µW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management. [reprint (PDF)]
20.	Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi Applied Physics Letters, Vol. 101, No. 25, p. 251121-1-- December 17, 2012 ...[Visit Journal] We demonstrate room temperature THz quantum cascade laser sources with a broad spectral coverage based on intracavity difference-frequency generation. Two mid-infrared active cores based on the single-phonon resonance scheme are designed with a THz nonlinearity specially optimized at the high operating fields that correspond to the highest mid-infrared output powers. A Čerenkov phase-matching scheme along with integrated dual-period distributed feedback gratings are used for efficient THz extraction and spectral purification. Single mode emissions from 1.0 to 4.6 THz with a side-mode suppression ratio and output power up to 40 dB and 32 μW are obtained, respectively. [reprint (PDF)]
20.	Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetector Arash Dehzangi , Abbas Haddadi, Romain Chevallier, Yiyun Zhang and Manijeh Razegh Semicond. Sci. Technol. 34, 03LT01-- February 4, 2019 ...[Visit Journal] We present an initial demonstration of a 1280 × 1024 extended short-wavelength infrared focal plane array (FPA) imager with 12μm pixel-pitch based on type–II InAs/AlSb/GaSb superlattice heterojunction photodetectors, with a novel bandstructure-engineered photo-generated carrier extractor as the window layer in the hetero structure to efﬁciently extract the photo-generated carriers. This heterostructure with a larger bandgap top window/contact layer leads to the device having lower dark current density compared to conventional pn junction devices. The large format FPA was fabricated with 12 μm pixel-pitch using a developed fabrication process. Test pixels fabricated separately exhibit 100% cut–off wavelengths of ∼2.22, ∼2.34μm, and ∼2.45μm at 150, 200K, and 300K. The test devices achieve saturated quantum efﬁciency values under zero bias of 54.3% and 68.4% at 150 and 300K, under back-side illumination and without any anti-reﬂection coating. At 150K, these photodetectors exhibit dark current density of 1.63 × 10⁻⁷ A·cm⁻² under −20mV applied bias providing a speciﬁc detectivity of 1.01 × 10¹¹ cm ·Hz^½/W at 1.9μm. [reprint (PDF)]
20.	Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication M. Razeghi special issue of Microelectronics Journal 30 (10)-- October 1, 1999[reprint (PDF)]
20.	High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN Erdem Cicek, Ryan McClintock, Abbas Haddadi, William A. Gaviria Rojas, and Manijeh Razeghi IEEE Journal of Quantum Electronics, Vol. 50, Issue 8, p 591-595-- August 1, 2014 ...[Visit Journal] We report on solar-blind ultraviolet, AlxGa1-x N- based,p-i-n,focal plane array (FPA) with 92% operability. At the peak detection wavelength of 278 nm, 320×256-FP A-pixel showed unbiased peak external quantum efficiency (EQE) and responsivity of 49% and 109 mA/W, respectively, increasing to 66% under 5 volts of reverse bias. Electrical measurements yielded a low-dark current density: <7×10^-9A/cm², at FPA operating voltage of 2 volts of reverse bias. [reprint (PDF)]
20.	Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi Applied Physics Letters 73 (7)-- August 17, 1998 ...[Visit Journal] We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W and a detectivity of 4.74×10⁷ cm· Hz^½/W at 77 K. [reprint (PDF)]
20.	Solar blind GaN p-i-n photodiodes D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi Applied Physics Letters 72 (25)-- June 22, 1998 ...[Visit Journal] We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 10¹¹ Ω. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit. [reprint (PDF)]
20.	Very High Average Power Quantum Cascade Lasers by GasMBE S. Slivken and M. Razeghi SPIE Conference, San Jose, CA, Vol. 4999, pp. 59-- January 27, 2003 ...[Visit Journal] Very high average power QCLs are demonstrated within the 5.8 - 9 µm wavelength range. At longer wavelengths, scaling of the power is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 µm, over 3.5 W of peak power per facet has been demonstrated at room temperature for a single 25 µm by 3 mm diode, with an average power of 150 mW at 6% duty cycle. At shorter wavelengths, highly strain-balanced heterostructures are used to create a high coduction band offset and minimize leakage current. At λ = 6 µm, utilizing a high reflective coating and epilayer-down mounting of the laser, we demonstrate 225 mW of average power from a single facet at room temperature. Increasing the conduction band offset further and optimizing the doping in the injector region has led to demonstration of > 250 mW average power (λ = 5.8 µm) at > 50% duty cycle for a 20 µm by 2 mm HR coated diode bonded epilayer-down to a copper heatsink. Also at room temperature, use of Au electroplating and wider ridges has allowed us to further demonstrate without epilayer-down bonding, 0.67 W average power at 17% duty cycle from a single 40 µm by 2 mm HR coated laser. [reprint (PDF)]
20.	Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ ∼ 3.76 μm N. Bandyopadhyay, Y. Bai, B. Gokden, A. Myzaferi, S. Tsao, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 97, No. 13-- September 27, 2010 ...[Visit Journal] An InP-based quantum cascade laser heterostructure emitting at 3.76 μm is grown with gas-source molecular beam epitaxy. The laser core is composed of strain balanced In_0.76Ga_0.24As/In_0.26Al_0.74As. Pulsed testing at room temperature exhibits a low threshold current density (1.5 kA/cm²) and high wall plug efficiency (10%). Room temperature continuous wave operation gives 6% wall plug efficiency with a maximum output power of 1.1 W. Continuous wave operation persists up to 95 °C. [reprint (PDF)]
20.	InSb Infrared Photodetectors on Si Substrates Grown by Molecular Beam Epitaxy E. Michel, J. Xu, J.D. Kim, I. Ferguson, and M. Razeghi IEEE Photonics Technology Letters 8 (5) pp. 673-- May 1, 1996 ...[Visit Journal] The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10³ V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10¹⁰ cm·Hz^½/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. [reprint (PDF)]
19.	Sb-based infrared materials and photodetectors for the near room temperature applications J.D. Kim, E. Michel, H. Mohseni, J. Wojkowski, J.J. Lee and M. Razeghi SPIE Conference, San Jose, CA, Vol. 2999, pp. 55-- February 12, 1997 ...[Visit Journal] We report on the growth of InSb, InAsSb, and InTlSb alloys for infrared photodetector applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The materials and detector structures were grown on (100) and (111)B semi-insulating GaAs and GaAs coated Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. Photoconductive detectors fabricated from InAsSb and InTlSb have been operated in the temperature range from 77 K to 300 K. The material parameters for photovoltaic device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with 77 K peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10-2 V/W at 8 micrometers . The RoA product of InAsSb detectors has been theoretically and experimentally analyzed. [reprint (PDF)]
19.	Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice Arash Dehzangi, Jiakai Li, Manijeh Razeghi Photonics 2021, 8(5), 148; https://doi.org/10.3390/photonics8050148 Received: 8 March 2021 / Revised: 12 April 2021 / Accepted: 25 April 2021 / Published: 30 April 2021 ...[Visit Journal] We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved. [reprint (PDF)]
19.	Optical Coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers J. Nguyen, J.S. Yu, A. Evans, S. Slivken and M. Razeghi Applied Physics Letters, 89 (11)-- September 11, 2006 ...[Visit Journal] The authors report on the development of high-reflection and multilayer antireflection coatings using ion-beam sputtering deposition for long-wave infrared (λ~9.4 μm) quantum cascade lasers. A metallic high-reflection coating structure using Y₂O₃ and Au is demonstrated to achieve a high reflectance of 96.70%, and the use of a multilayer anti-reflection coating structure using PbTe and ZnO is demonstrated to achieve a very low reflectance of 1.64%. [reprint (PDF)]
19.	Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier A. Haddadi, R. Chevallier, A. Dehzangi, and M. Razeghi Applied Physics Letters 110, 101104-- March 8, 2017 ...[Visit Journal] Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAsSb/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed to have a 100% cut-off wavelength of ∼2.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.65 A/W at 1.9 μm, corresponding to a quantum efficiency of 41% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 78 Ω·cm² and a dark current density of 8 × 10⁻³ A/cm² under −400 mV applied bias at 300 K, the nBn photodetector exhibited a specific detectivity of 1.51 × 10¹⁰ Jones. At 150 K, the photodetector exhibited a dark current density of 9.5 × 10⁻⁹ A/cm² and a quantum efficiency of 50%, resulting in a detectivity of 1.12 × 10¹³ Jones. [reprint (PDF)]
19.	Advanced InAs/GaSb Superlattice Photovoltaic Detectors for Very-Long Wavelength Infrared Applications Y. Wei, A. Gin, M. Razeghi, and G.J. Brown Applied Physics Letters 80 (18)-- May 6, 2002 ...[Visit Journal] We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A·W^-1 at 80 K. A peak detectivity of 4.5×10¹⁰ cm· Hz^½·W^-1 was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm [reprint (PDF)]
19.	III-Nitride Avalanche Photodiodes P. Kung, R. McClintock, J. Pau Vizcaino, K. Minder, C. Bayram and M. Razeghi SPIE Conference, January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices IV, Vol. 6479, p. 64791J-1-12-- January 29, 2007 ...[Visit Journal] Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first backilluminated GaN p-i-n APD structures on transparent sapphire substrates. Under low bias and linear mode avalanche operation where they exhibited gains near 1500 after undergoing avalanche breakdown. The breakdown electric field in GaN was determined to be 2.73 MV/cm. The hole impact ionization coefficients were shown to be greater than those of electrons. [reprint (PDF)]
19.	Terahertz emitters at Center for Quantum Devices: recent advances and future trends Manijeh Razeghi Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017705-- August 23, 2018 ...[Visit Journal] This paper reviews the recent advances and future trends of terahertz (THz) emitters at CQD/NU, highlights the high-performance THz sources based on intracavity nonlinear frequency generation in mid-infrared quantum cascade lasers. Significant performance improvements of our THz sources in the power, wall plug efficiency are achieved by systematic optimizing the device's active region, waveguide, and chip bonding strategy. High THz power up to 1.9 mW and 0.014 mW for pulsed mode and continuous wave operations at room temperature are demonstrated, respectively. Even higher power and efficiency are envisioned based on enhancements in outcoupling efficiency and mid-IR performance. Our compact THz device with high power and wide tuning range is highly suitable for the imaging, sensing, spectroscopy, medical diagnosis, and many other applications. [reprint (PDF)]
19.	Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition M. Razeghi; M. Defour; F. Omnes; M. Dobers; J. P. Vieren; Y. Guldner Appl. Phys. Lett. 55, 457–459 (1989)-- June 17, 1989 ...[Visit Journal] On studying the magnetoresistivity of GaAs-GalnP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2 / (V s) at an electron density of 4.1 X lOll cm- 2 . This high electron mobility is confirmed by cyclotron resonance measurements< [reprint (PDF)]

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