Center for Quantum Devices - Most Downloaded Journal Articles

Page 3 of 18: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 >> Next (433 Items)

3.	Neutron Activation Analysis of an Iranian Cigarette and its Smoke Z. Abedinzadeh, M. Razeghi and B. Parsa Z. Abedinzadeh, M. Razeghi and B. Parsa, Journal of Radioanalytical Chemistry, VoL 35 [1977) 373-376-- September 1, 1977 ...[Visit Journal] Non-destructive neutron activation analysis, employing a high-resolution Ge(Li) detector, was applied to determine the concentration of 24 trace elements in the tobacco of the Zarrin cigarette which is commercially made in Iran. These elements are: Na, K, Sc, Cr, Mn, Fe, Co, Zn, Se, Br, Rb, Ag, Sb, Cs, Ba, La, Ce, Sm, Eu, Tb, Hf, Au, Hg and Th. The smokes from the combustion of this tobacco and of the cigarette paper were also analysed for these elements and the percentage transference values were calculated. [reprint (PDF)]
3.	Ultraviolet Detectors for AstroPhysics Present and Future M. Ulmer, M. Razeghi, and E. Bigan Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 239-- February 6, 1995 ...[Visit Journal] Astronomical instruments for the study of UV astronomy have been developed for NASA missions such as the Hubble Space Telescope. The systems that are `blind to the visible' (`solar-blind') yet sensitive to the UV that have been flown in satellites have detective efficiencies of about 10 to 20%, although typically electron bombardment charge coupled devices are higher at 30 - 40% and ordinary CCDs achieve 1 - 5%. Therefore, there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors. We provide a brief review of some aspects of UV astronomy, UV detector development, and possible technologies for the future. We suggest that a particularly promising future technology is one based on the ability of investigators to produce high quality films made of wide bandgap III-V semiconductors. [reprint (PDF)]
3.	Theoretical investigation of minority carrier leakage of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes J. Diaz, I. Eliashevich, H.J. Yi, M. Stanton, and M. Razeghi Applied Physics Letters 65 (18)-- October 31, 1994 ...[Visit Journal] We report a theoretical model that accurately describes the effects of minority carrier leakage from the InGaAsP waveguide into InGaP cladding layers in high‐power aluminum-free 0.8 μm InGaAsP/InGaP/GaAs separate confinement heterostructure lasers. Current leakage due to the relatively low band‐gap discontinuity between the active region and the InGaP barrier can be eliminated by employing laser diodes with cavity length longer than 500 μm. Experimental results for lasers grown by low-pressure metalorganic chemical vapor deposition are in excellent agreement with the theoretical model. [reprint (PDF)]
3.	Deep ultraviolet (254 nm) focal plane array E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi SPIE Proceedings, Conference on Infrared Sensors, Devices and Applications; and Single Photon Imaging II, Vol. 8155, p. 81551O-1-- August 21, 2011 ...[Visit Journal] We report the synthesis, fabrication and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, Al_xGa_1-xN-based detectors, fully realized within our research laboratory. We implemented a novel pulsed atomic layer deposition technique for the metalorganic chemical vapor deposition (MOCVD) growth of crackfree, thick, and high Al composition Al_xGa_1-xN layers. Following the growth, the wafer was processed into a 320 × 256 array of 25 μm × 25 μm pixels on a 30 μm pixel-pitch and surrounding mini-arrays. A diagnostic mini-array was hybridized to a silicon fan-out chip to allow the study of electrical and optical characteristics of discrete pixels of the FPA. At a reverse bias of 1 V, an average photodetector exhibited a low dark current density of 1.12×10^-8 A·cm^-2. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower and falling off three orders of magnitude by 285 nm. After indium bump deposition and dicing, the FPA is hybridized to a matching ISC 9809 readout integrated circuit (ROIC). By developing a novel masking technology, we significantly reduced the visible response of the ROIC and thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allowed the FPA to achieve high external quantum efficiency (EQE): at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated. [reprint (PDF)]
3.	High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813-- January 31, 2020 ...[Visit Journal] A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×10¹¹ cm·Hz^½/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80 μm diameter circular diode size under 20 V applied reverse bias, a −3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection. [reprint (PDF)]
3.	Recent advances in IR semiconductor laser diodes and future trends M. Razeghi; Y. Bai; N. Bandyopadhyay; B. Gokden; Q.Y. Lu; S. Slivken Photonics Society Summer Topical Meeting Series, IEEE [6000041], pp. 55-56 (2011)-- July 18, 2011 ...[Visit Journal] The wall plug efficiency of the mid-infrared quantum cascade laser in room temperature continuous wave (cw) operation is brought to 21%, with a maximum output power of 5.1 W. Using a surface grating distributed feedback (DFB) approach, we demonstrated 2.4 W single mode output in room temperature cw operation. With a photonic crystal distributed feedback (PCDFB) design, we achieved single mode spectrum and close to diffraction limited far field with a room temperature high peak power of 34 W. [reprint (PDF)]
3.	High speed type-II superlattice based photodetectors transferred on sapphire Arash Dehzangi, Ryan McClintock, Donghai Wu, Jiakai Li, Stephen Johnson, Emily Dial and Manijeh Razeghi Applied Physics Express, Volume 12, Number 11-- October 3, 2019 ...[Visit Journal] We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the −3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance. Direct Link [reprint (PDF)]
3.	Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current Density S. Slivken and M. Razeghi Solid State Electronics 46-- January 1, 2002 ...[Visit Journal] Design and material optimization are used to both decrease the threshold current density and increase the output power for quantum cascade lasers. Waveguides are designed to try and minimize free-carrier and surface-plasmon absorption. Excellent material characterization is also presented, showing excellent control over layer thickness, interface quality, and doping level. Experiments are done to both optimize the injector doping level and to maximize the output power from a single aperture. At 300 K, a threshold current density as low as 1.8 kA/cm² is reported, along with peak powers of approximately 2.5 W. Strain-balanced lasers are also demonstrated at λnot, vert, similar5 μm, exhibiting threshold current densities<300 A/cm² at 80 K. These values represent the state-of-the-art for mid-infrared lasers with λ>4 μm [reprint (PDF)]
3.	EPR Study of Gd around the Ferroelastic Transition Point of Pb3 (PO4)2 M. RAZEGHI and B. HOULIER M. RAZEGHI et al., phys. stat. sol. (b) 89, K135 (1978) -- October 1, 1978 ...[Visit Journal][reprint (PDF)]
3.	Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994 ...[Visit Journal] We report an analysis of the heteroepitaxial interfaces in high quality GaInP–GaAs superlattices grown simultaneously on GaAs and Si substrates by gas source molecular beam epitaxy. These two superlattices have been studied using high resolution x-ray diffraction measurements. Sharp superlattice satellites, with very little broadening, are observed within a 6° range for the sample on GaAs. Photoluminescence peaks with full widths at half-maximums of 5 and 7 meV are obtained at 4 K for samples with 58 Å wells on GaAs and Si, respectively. Room temperature exciton absorption is observed in the photovoltage measurements for a superlattice grown on Si substrate. The thicknesses determined by x-ray analysis are consistent with those obtained by a Kronig–Penny model fitting of the photovoltage spectroscopy. [reprint (PDF)]
3.	Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure B. Lane, D. Wu, H.J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon and M. Razeghi Applied Physics Letters 70 (11)-- April 17, 1997 ...[Visit Journal] InAs_xSb_1−x/InP_1−x−yAs_xSb_y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results. [reprint (PDF)]
3.	EPR investigation of Gd3+ and Eu2+ in the α- and β-phases of lead phosphate M. RAZEGHI, J. P. BUISSON, and B. HOULIE M. RAZEGHI et al.: EPR Investigation of Gd3+ and Eu2+ in Lead Phosphate phys. stat. sol. (b) 96, 283 (1979-- September 1, 1979 ...[Visit Journal] The X-band EPR spectra of Gd3+and Eu2+diluted in Pb3(P04)2crystals are studied. Lead phos-phate exhibits a ferroelastic phase transition a t 180 “C and the EPR spectra obtained in eachphase differ from each other. The spectra are very complex because the zero field splitting hasthe same order of magnitude as the Zeeman term. The spin Hamiltonian parameters and theenergy levels are computed. “Forbidden” or “missing” transitions and line intensities can beexplained. [reprint (PDF)]
3.	Room temperature quantum cascade laser with ∼ 31% wall-plug efficiency F. Wang, S. Slivken, D. H. Wu, and M. Razeghi AIP Advances 10, 075012-- July 14, 2020 ...[Visit Journal] In this article, we report the demonstration of a quantum cascade laser emitting at λ ≈ 4.9 μm with a wall-plug efficiency of ∼31% and an output power of ∼23 W in pulsed operation at room temperature with 50 cascade stages (Ns). With proper fabrication and packaging, this buried ridge quantum cascade laser with a cavity length of 5 mm delivers more than ∼15 W output power, and its wall-plug efficiency exceeds ∼20% at 100 °C. The experimental results of the lasers are well in agreement with the numerical predictions. [reprint (PDF)]
3.	Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices Romain Chevallier, Abbas Haddadi, Manijeh Razeghi Solid-State Electronics 136, pp. 51-54-- June 20, 2017 ...[Visit Journal] In this study, we demonstrate 12 × 12 µm² high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 µm-thick p-doped absorption regions. High quality dry etching combined with SiO₂ passivation results in a surface resistivity value of 7.9 × 10⁵ Ω·cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 × 10⁻⁴ A/cm² for the longer (red) and 1.3 × 10⁻⁴ A/cm² for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50% cut-off wavelengths of 8.3 and 11.2 µm for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37% and 29%, respectively. This results in specific detectivity values of 2.5 × 10¹¹ cm·Hz^½/W and 1.3 × 10¹¹ cm·Hz^½/W at 77 K. [reprint (PDF)]
3.	Substrate emission quantum cascade ring lasers with room temperature continuous wave operation Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, and M. Razeghi SPIE Proceedings, Vol. 8268, p. 82680N-- January 22, 2012 ...[Visit Journal] We demonstrate room temperature, continuous wave operation of quantum cascade ring lasers around 5 μm with single mode operation up to 0.51 W output power. Single mode operation persists up to 0.4 W. Light is coupled out of the ring cavity through the substrate with a second order distributed feedback grating. The substrate emission scheme allows for epilayer-down bonding, which leads to room temperature continuous wave operation. The far field analysis indicates that the device operates in a high order mode. [reprint (PDF)]
3.	High-performance, continuous-wave operation of λ ~ 4.6 μm quantum-cascade lasers above room temperature J.S. Yu, S. Slivken, A. Evans and M. Razeghi IEEE Journal of Quantum Electronics, Vol. 44, No. 8, p. 747-754-- August 1, 2008 ...[Visit Journal] We report the high-performance continuous-wave (CW) operation of 10-μm-wide quantum-cascade lasers (QCLs) emitting at λ ~ 4.6 μm, based on the GaInAs–AlInAs material without regrowth, in epilayer-up and -down bonding configurations. The operational characteristics of QCLs such as the maximum average power, peak output power, CW output power, and maximum CW operating temperature are investigated, depending on cavity length. Also, important device parameters, i.e., the waveguide loss, the transparency current density, the modal gain, and the internal quantum efficiency, are calculated from length-dependent results. For a high-reflectivity (HR) coated 4-mm-long cavity with epilayer-up bonding, the highest maximum average output power of 633 mW is measured at 65% duty cycle, with 469 mW still observed at 100%. The laser exhibits the maximum wall-plug efficiencies of 8.6% and 3.1% at 298 K, in pulsed and CW operatons, respectively. From 298 to 393 K, the temperature dependent threshold current density in pulsed operation shows a high characteristic temperature of 200 K. The use of an epilayer-down bonding further improves the device performance. A CW output power of 685 mW at 288 K is achieved for the 4-micron-long cavity. At 298 K, the output power of 590 mW, threshold current density of 1.52 kA / cm2, and maximum wall-plug efficiency of 3.73% are obtained under CW mode, operating up to 363 K (90 °C). For HR coated 3-micron-long cavities, laser characteristics across the same processed wafer show a good uniformity across the area of 2 x 1 cm², giving similar output powers, threshold current densities, and emission wavelengths. The CW beam full-width at half-maximum of far-field patterns are 25 degree and 46 degree for the parallel and the perpendicular directions, respectively. [reprint (PDF)]
3.	High power broad area quantum cascade lasers Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi Applied Physics Letters, Vol. 95, No. 22, p. 221104-1-- November 30, 2009 ...[Visit Journal] Broad area quantum cascade lasers (QCLs) are studied with ridge widths up to 400 µm, in room temperature pulsed mode operation at an emission wavelength around 4.45 µm. The peak output power scales linearly with the ridge width. A maximum total peak output power of 120 W is obtained from a single 400-µm-wide device with a cavity length of 3 mm. A stable far field emission characteristic is observed with dual lobes at ±38° for all tested devices, which suggests that these broad area QCLs are highly resistant to filamentation. [reprint (PDF)]
3.	High-power, room-temperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ = 4.8 µm J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi Applied Physics Letters, 87 (4)-- July 25, 2005 ...[Visit Journal] The authors present high-power continuous-wave (cw) operation of distributed-feedback quantum-cascade lasers. Continuous-wave output powers of 56 mW at 25 °C and 15 mW at 40 °C are obtained. Single-mode emission near 7.8 µm with a side-mode suppression ratio of >=30 dB and a tuning range of 2.83 cm⁻¹ was obtained between 15 and 40 °C. The device exhibits no beam steering with a full width at half maximum of 27.4° at 25 °C in cw mode. [reprint (PDF)]
3.	Electrical Transport Properties of Highly Doped N-type GaN Epilayers H.J. Lee, M.G. Cheong, E.K. Suh, and M. Razeghi SPIE Conference, San Jose, CA, -- January 28, 1998 ...[Visit Journal] Temperature-dependent Hall-effects in MOCVD-grown Si-doped GaN epilayers were measured as a function of temperature in the range 10-800 K. The results were satisfactorily analyzed in terms of a two-band model including the (Gamma) and impurity bands at lower temperatures than room. The (Gamma) band electrons are dominant only high temperatures. The ionized impurity scattering is the most important in the (Gamma) band except at very high temperatures. [reprint (PDF)]
3.	Use of Yttria-Stabilised Zirconia Substrates for Zinc Oxide Mediated Epitaxial Lift-off of Superior Yttria-Stabilised Zirconia Thin Films D. J. Rogers, T. Maroutian, V. E. Sandana, P. Lecoeur, F. H. Teherani, P. Bove and M. Razeghi Proc. of SPIE Vol. 12887, Oxide-based Materials and Devices XV, 128870P 2024, San Francisco),doi: 10.1117/12.3023431 ...[Visit Journal] ZnO layers were grown on (100) and (111) oriented YSZ substrates by pulsed laser deposition (PLD). X-ray diffraction studies revealed growth of wurtzite ZnO with strong preferential (0002) orientation. The ZnO layer on YSZ (111) showed distinct Pendellosung fringes and a more pronounced c-axis orientation (rocking curve of 0.08°). Atomic force microscopy revealed RMS roughnesses of 0.7 and 2.2nm for the ZnO on the YSZ (111) and YSZ (100), respectively. YSZ was then grown on the ZnO buffered YSZ (111) substrate by PLD. XRD revealed that the YSZ overlayer grew with a strong preferential (111) orientation. The YSZ/ZnO/YSZ (111) top surface was temporary bonded to an Apiezon wax carrier and the sample was immersed in 0.1M HCl so as to preferentially etch/dissolve away the ZnO underlayer and release the YSZ from the substrate. XRD revealed only the characteristic (111) peak of YSZ after lift-off and thus confirmed both the dissolution of the ZnO and the preservation of the crystallographic integrity of the YSZ on the wax carrier. Optical and Atomic Force Microscopy revealed some buckling, roughening and cracking of the lifted YSZ, however. XRD suggested that this may have been due to compressive epitaxial strain release. [reprint (PDF)]
3.	Very Long Wavelength GaAs/GaInP Quantum Well Infrared Photodetectors C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi SPIE Conference, San Jose, CA, -- February 12, 1997 ...[Visit Journal] We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm. Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 x 10⁵ cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated. [reprint (PDF)]
3.	Growth of In_1-xTl_xSb, a New Infrared Material, by Low-Pressure Metalorganic Chemical Vapor Deposition Y.H. Choi, R. Sudharsanan, C, Besikci, and M. Razeghi Applied Physics Letters 63 (3)-- July 19, 1993 ...[Visit Journal] We report the growth of In_1-xTl_xSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In_1-xTl_xSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 °C. X-ray diffraction measurements showed resolved peaks of In_1-xTl_xSb and InSb films. Infrared absorption spectrum of In_1-xTl_xSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In_1-xTl_xSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure. [reprint (PDF)]
3.	Advances in mid-infrared detection and imaging: a key issues review Manijeh Razeghi and Binh-Minh Nguyen Rep. Prog. Phys. 77 (2014) 082401-- August 4, 2014 ...[Visit Journal] It has been over 200 years since people recognized the presence of infrared radiation, and developed methods to capture this signal. However, current material systems and technologies for infrared detections have not met the increasing demand for high performance infrared detectors/cameras, with each system having intrinsic drawbacks. Type-II InAs/GaSb superlattice has been recently considered as a promising candidate for the next generation of infrared detection and imaging. Type-II superlattice is a man-made crystal structure, consisting of multiple quantum wells placed next to each other in a controlled way such that adjacent quantum wells can interact. The interaction between multiple quantum wells offers an additional degree of freedom in tailoring the material's properties. Another advantage of type-II superlattice is the experimental benefit of inheriting previous research on material synthesis and device fabrication of bulk semiconductors. It is the combination of these two unique strengths of type-II superlattice—novel physics and easy manipulation—that has enabled unprecedented progress in recent years. In this review, we will describe historical development, and current status of type-II InAs/GaSb superlattice for advanced detection and imaging in the mid-infrared regime (λ = 3–5 µm). [reprint (PDF)]
3.	High-performance bias-selectable dual-band Short-/Mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices M. Razeghi; A.M. Hoang; A. Haddadi; G. Chen; S. Ramezani-Darvish; P. Bijjam; P. Wijewarnasuriy; E. Decuir Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041W (June 18, 2013)-- June 18, 2013 ...[Visit Journal] We report a bias selectable dual-band Type-II superlattice-based short-wave infrared (SWIR) and mid-wave infrared (MWIR) co-located photodetector capable of active and passive imaging. A new double-layer etch-stop scheme is introduced for back-side-illuminated photodetectors, which enhanced the external quantum efficiency both in the SWIR and MWIR spectral regions. Temperature-dependent dark current measurements of pixel-sized 27 μm detectors found the dark current density to be ∼1×10-5 A/cm2 for the ∼4.2 μm cut-off MWIR channel at 140 K. This corresponded to a reasonable imager noise equivalent difference in temperature of ∼49 mK using F/2.3 optics and a 10 ms integration time (tint), which lowered to ∼13 mK at 110 K using and integration time of 30 ms, illustrating the potential for high-temperature operation. The SWIR channel was found to be limited by readout noise below 150 K. An excellent imagery from the dual-band imager exemplifying pixel coincidence is shown. [reprint (PDF)]
3.	High-Average-Power, High-Duty-Cycle (~6 μm) Quantum Cascade Lasers S. Slivken, A. Evans, J. David, and M. Razeghi Virtual Journal of Nanoscience & Technology 9-- December 9, 2002 ...[Visit Journal][reprint (PDF)]

Page 3 of 18: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 >> Next (433 Items)