Center for Quantum Devices - Most Downloaded Journal Articles

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15.	Very Long Wavelength Infrared Type-II Detectors Operating at 80K H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park Applied Physics Letters 77 (11)-- September 11, 2000 ...[Visit Journal] We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T = 80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λ_c = 17 μm showed a peak responsivity of about 100 mA/W at T = 80 K. Devices with 50% cutoff wavelengths up to λ_c = 22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths. [reprint (PDF)]
15.	Extended electrical tuning of quantum cascade lasers with digital concatenated gratings S. Slivken, N. Bandyopadhyay, Y. Bai, Q. Y. Lu, and M. Razeghi Appl. Phys. Lett. 103, 231110 (2013)-- December 6, 2013 ...[Visit Journal] In this report, the sampled grating distributed feedback laser architecture is modified with digital concatenated gratings to partially compensate for the wavelength dependence of optical gain in a standard high efficiency quantum cascade laser core. This allows equalization of laser threshold over a wide wavelength range and demonstration of wide electrical tuning. With only two control currents, a full tuning range of 500 nm (236 cm⁻¹) has been demonstrated. Emission is single mode, with a side mode suppression of >20 dB. [reprint (PDF)]
15.	MOCVD grown β-Ga₂O₃ metal-oxide-semiconductor field effect transistors on sapphire Ji-Hyeon Park , Ryan McClintock, Alexandre Jaud, Arash Dehzangi , Manijeh Razeghi Applied Physics Express 12, 095503-- August 28, 2019 ...[Visit Journal] We fabricated β-Ga₂O₃:Si metal-oxide field-effect transistors (MOSFETs) on c-plane sapphire substrates which typically showed maximum drain current of 100 mA·mm⁻¹. β-Ga₂O₃:Si thin films were realized on c-plane sapphire substrates through a combination of metalorganic chemical vapor deposition and post-annealing. The MOSFET device presented excellent on/off drain current ratio of ∼10¹¹ with very low gate leakage current, sharp pinch off behavior, and a breakdown voltage of 400 V at VG = −40 V. The growth and fabrication of β-Ga₂O₃:Si MOSFETs on c-plane sapphire is valuable to its demonstration of the great potential for future high-power electronic devices. [reprint (PDF)]
15.	LEO of III-Nitride on Al₂O₃ and Si Substrates M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously. [reprint (PDF)]
15.	8.5 μm Room Temperature Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy S. Slivken and M. Razeghi SPIE Conference, San Jose, CA, -- January 28, 1998 ...[Visit Journal] We report room-temperature pulsed-mode operation of 8.5 μm quantum cascade lasers grown by gas-source molecular beam epitaxy. The theory necessary to understand the operation of the laser is presented and current problems are analyzed. Very good agreement is shown to exist between theoretical and experimental emission wavelengths. The high- temperature operation is achieved with 1 μs pulses at a repetition rate of 200 Hz. Peak output power in these conditions is in excess of 700 mW per 2 facets at 79 K and 25 mW at 300 K. Threshold current as a function of temperature shows an exponential dependence with T₀ equals 188 K for a 1.5 mm cavity. [reprint (PDF)]
15.	Suppressing Spectral Crosstalk in Dual-Band LongWavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reﬂectors Yiyun Zhang, Abbas Haddadi, Arash Dehzangi , Romain Chevallier, Manijeh Razeghi IEEE Journal of Quantum Electronics Volume: 55, Issue:1-- November 22, 2018 ...[Visit Journal] Antimonide-based type-II superlattices (T2SLs) have made possible the development of high-performance infrared cameras for use in a wide variety of thermal imaging applications, many of which could beneﬁt from dual-band imaging. The performance of this material system has not reached its limits. One of the key issues in dual-band infrared photodetection is spectral crosstalk. In this paper, air-gapped distributed Bragg reﬂectors (DBRs) have been monolithically integrated between the two channels in long-/very long-wavelength dualband InAs/InAs_1−xSb_x/AlAs_1−xSb_x-based T2SLs photodetectors to suppress the spectral crosstalk. This air-gapped DBR has achieved a signiﬁcant spectral suppression in the 4.5–7.5-µm photonic stopband while transmitting the optical wavelengths beyond 7.5 µm, which is conﬁrmed by theoretical calculations, numerical simulation, and experimental results. [reprint (PDF)]
15.	Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs) J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z. Tidrow Applied Physics Letters, 84 (13)-- April 29, 2004 ...[Visit Journal] We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×10¹⁰ cm·Hz^½/W was achieved at T = 95 K and a bias of –1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T = 77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. [reprint (PDF)]
15.	High Detectivity InAs Quantum-Dot Infrared Photodetectors Grown on InP by Metalorganic Chemical Vapor Deposition W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, and M. Razeghi Applied Physics Letters, 86 (19)-- May 9, 2005 ...[Visit Journal] We report a high-detectivity InAs quantum-dot infrared photodetector. The InAs quantum dots were grown by self-assembly on InP substrates via low-pressure metal–organic chemical–vapor deposition. Highly uniform quantum dots with a density of 4×10¹⁰ cm² were grown on a GaAs/InP matrix. Photoresponse was observed at temperatures up to 160 K with a peak of 6.4 µm and cutoff of 6.6 µm. Very low dark currents and noise currents were obtained by inserting Al_0.48In_0.52As current blocking layers. The background-limited performance temperature was 100 K. A detectivity of 1.0×10¹⁰ cm·Hz^½/W was obtained at 77 K with a bias of –1.1 V. [reprint (PDF)]
15.	Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrat Y.H. Choi, P. Staveteig, E. Bigan, and M. Razeghi Journal of Applied Physics 75 (6)-- March 15, 1994 ...[Visit Journal] Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low‐pressure metal‐organic chemical vapor deposition on semi‐insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements. [reprint (PDF)]
15.	Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes A. Hood, M. Razeghi, V. Nathan and M.Z. Tidrow SPIE Conference, San Jose, CA, Vol. 6127, pp. 61270U-- January 23, 2006 ...[Visit Journal] The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) Type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary Type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 µm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength Type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5×10¹⁴ cm^-3. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. [reprint (PDF)]
15.	Quantum-Cascade Lasers Operating in Continuous-Wave Mode Above 90°C at λ ~5.25 µm A. Evans, J. Nguyen, S. Slivken, J.S. Yu, S.R. Darvish, and M. Razeghi Applied Physics Letters 88 (5)-- January 30, 2006 ...[Visit Journal] We report on the design and fabrication of λ~5.25 μm quantum-cascade lasers (QCLs) for very high temperature continuous-wave (CW) operation. CW operation is reported up to a maximum temperature of 90 °C (363 K). CW output power is reported in excess of 500 mW near room temperature with a low threshold current density. A finite element thermal model is used to investigate the G_th and maximum CW operating temperature of the QCLs. [reprint (PDF)]
15.	Injector doping level dependent continuous-wave operation of InP-based QCLs at λ~ 7.3 µm above room temperature J.S. Yu, S. Slivken, and M. Razeghi Semiconductor Science and Technology (SST), Vol. 25, No. 12, p. 125015-- December 1, 2010 ...[Visit Journal] We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ~ 7.3 µm above room temperature. The injector doping level–dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10¹⁶ cm⁻³ and 2 × 10¹⁷ cm⁻³. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 10¹⁶ cm⁻³, a high-reflectivity-coated 10 µm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm⁻² at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities. [reprint (PDF)]
15.	Type-II InAs/GaSb/AlSb superlatticebased heterojunction phototransistors: back to the future Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Thomas Yang, Manijeh Razeghi Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV- Page-1054004-1-- January 26, 2018 ...[Visit Journal] Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e– SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm. [reprint (PDF)]
15.	High-Performance InP-Based Mid-IR Quantum Cascade Lasers M. Razeghi IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No. 3, May-June 2009, p. 941-951.-- June 5, 2009 ...[Visit Journal] Quantum cascade lasers (QCLs) were once considered as inefficient devices, as the wall-plug efficiency (WPE) was merely a few percent at room temperature. But this situation has changed in the past few years, as dramatic enhancements to the output power andWPE have been made for InP-based mid-IR QCLs. Room temperature continuous-wave (CW) output power as high as 2.8 W and WPE as high as 15% have now been demonstrated for individual devices. Along with the fundamental exploration of refining the design and improving the material quality, a consistent determination of important device performance parameters allows for strategically addressing each component that can be improved potentially. In this paper, we present quantitative experimental evidence backing up the strategies we have adopted to improve the WPE for QCLs with room temperature CW operation. [reprint (PDF)]
15.	Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures Y.-J. Chan; D. Pavlidis; M. Razeghi; F. Omnes IEEE TRANS. ELEC.DEVICES. 77. IO. 1990-- October 1, 1990 ...[Visit Journal] The DC and microwave characteristics of Ga/sub 0.51/In/sub 0.49/P/GaAs HEMTs grown by metalorganic chemical vapor deposition (MOCVD) are presented. Devices with 1- mu m-long gates show transconductances of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer are evaluated at low temperature by the threshold voltage shift and current collapse phenomena. GaInP/GaAs HEMTs show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively. [reprint (PDF)]
15.	Splitting of the Landau Level Coincidence: A Novel Phase Transition in Tilted Magnetic Fields Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing Phys Rev B 47 (7), 4048 (1993)-- January 1, 1993 ...[Visit Journal] Magnetotransport studies of GaxIn1-xAs/InP heterostructures in strong parallel magnetic fields at mK temperatures reveal a suppression of the coincidence of two Landau levels with opposite spin at filling factor 2. This phenomenon is explained by the occurrence of a phase transition from a spin-unpolarized state (at small tilt angles) to a spin-polarized state (at large tilt angles). [reprint (PDF)]
15.	Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Femtosecond nonlinear optical techniques have been employed in the study of carrier dynamics and transport in UV detector materials. Visible femtosecond pulses derived from the signal beam of a 250 kHz regenerative amplifier-pumped optical parametric amplifier were frequency doubled to obtain pulses tunable from 250 nm to 375 nm. Time-resolved reflectivity experiments indicate that the room-temperature carrier lifetime in GaN grown by double lateral epitaxial overgrowth is about 3 times longer than that of GaN grown on sapphire without benefit of this technique. The electron velocity-field characteristics and saturation velocity in GaN have been obtained form time-resolved studies of electroabsorption in a GaN p-i-n diode. The peak steady- state velocity of 1.9x10⁷ cm/s in this device occurs at 225 kV/cm. Time-resolved transmission measurements have been used to monitor ultrafast carrier relaxation phenomena in a thin AlGaN layer with bandgap in the solar blind region of the spectrum. Excitation intensity and wavelength dependent studies of the photoinduced bleaching decays suggest that they are primarily governed by trapping in a high density of sub-bandgap defect levels. [reprint (PDF)]
15.	Solar-blind photodetectors based on Ga₂O₃ and III-nitrides Ryan McClintock; Alexandre Jaud; Lakshay Gautam; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128803-- January 31, 2020 ...[Visit Journal] Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga₂O₃ thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga₂O₃. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a −2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ~100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors. [reprint (PDF)]
15.	High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition Available M. Razeghi; Ph. Maurel; F. Omnes; M. Defour; C. Boothroyd; W. M. Stobbs; M. Kelly J. Appl. Phys. 63, 4511–4514 (1988) -- May 1, 1988 ...[Visit Journal] We report the successful growth of Ga0.49 Iuo.5 ! P-GaAs superlattices on GaAs and Si substrates by low-pressure metalorganic chemical vapor deposition. The high quality of the structure grown on GaAs and silicon substrates has been evidenced by transmission electron microscopy photographs, that show very sharp interfaces between GaAs wells and Gao.49InO.51 P barriers, with perfect control of thicknesses and compositions. Classical Hall measurements performed on the sample further demonstrated the presence of a twodimensional electron ga.<; with a mobility at T = 4 K , fL (4 K) = 50000 cm2 1V Is, and a carrier concentration n _ (4 K) = 2,9 X 1011 em -2. GaAs/Gao.49 InO. 51 P superlattices have been used, as well as buffer layer in order to grow GaAs on silicon substrates. Mirrorlike single-crystal GaAs has thus been obtained. A GaInP IGaAs heterostructure with electron HaH mobility as high as 6000 cm2 /V Is at 300 K and 80000 cm2 /V Is at 4 K has been grown, which is the highest mobility that has yet been reported for these materials, [reprint (PDF)]
15.	Radiometric characterization of long-wavelength infrared type II strained layer superlattice focal plane array under low-photon irradiance conditions J. Hubbs, V. Nathan, M. Tidrow, and M. Razeghi Optical Engineering, Vol. 51, No. 6, p. 064002-1-- June 15, 2012 ...[Visit Journal] We present the results of the radiometric characterization of an “M” structure long wavelength infrared Type-II strained layer superlattice(SLS) infrared focal plane array (IRFPA) developed by Northwestern University (NWU). The performance of the M-structure SLS IRFPA was radiometrically characterized as a function of photon irradiance, integration time, operating temperature, and detector bias. Its performance is described using standard figures of merit: responsivity, noise, and noise equivalent irradiance. Assuming background limited performance operation at higher irradiances, the detector quantum efficiency for the SLS detector array is approximately 57%. The detector dark density at 80 K is 142 μA∕cm², which represents a factor of seven reduction from previously measured devices. [reprint (PDF)]
15.	Energy harvesting from millimetric ZnO single wire piezo-generators Rogers, D. J.; Carroll, C.; Bove, P.; Sandana, V. E.; Goubert, L.; Largeteau, A.; Teherani, F. Hosseini; Demazeau, G.; McClintock, R.; Drouhin, H.-J.; Razeghi, M. Oxide-based Materials and Devices III. Edited by Teherani, Ferechteh H.; Look, David C.; Rogers, David J. Proceedings of the SPIE, Volume 8263, article id. 82631X, 7 pp. (2012).-- February 9, 2013 ...[Visit Journal] This work reports on investigations into the possibility of harvesting energy from the piezoelectric response of millimetric ZnO rods to movement. SEM & PL studies of hydrothermally grown ZnO rods revealed sizes ranging from 1 - 3 mm x 100 - 400 microns and suggested that each was a wurtzite monocrystal. Studies of current & voltage responses as a function of time during bending with a probe arm gave responses coherent with those reported elsewhere in the literature for ZnO nanowires or micro-rod single wire generators. The larger scale of these rods provided some advantages over such nano- and microstructures in terms of contacting ease, signal level & robustness. [reprint (PDF)]
15.	Gain-length scaling in quantum dot/quantum well infrared photodetectors T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi Virtual Journal of Nanoscale Science & Technology-- September 14, 2009 ...[Visit Journal][reprint (PDF)]
15.	Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers Manijeh Razeghi Wenjia Zhou Ryan McClintock Donghai Wu Steven Slivken Optical Engineering 57(1), 011018-- December 1, 2017 ...[Visit Journal] We present recent progress on the development of monolithic, broadband, widely tunable midinfrared quantum cascade lasers. First, we show a broadband midinfrared laser gain realized by a heterogeneous quantum cascade laser based on a strain balanced composite well design of Al_0.63In_0.37As∕Ga_0.35In_0.65As∕ Ga_0.47In_0.53As. Single mode emission between 5.9 and 10.9 μm under pulsed mode operation was realized from a distributed feedback laser array, which exhibited a flat current threshold across the spectral range. Using the broadband wafer, a monolithic tuning between 6.2 and 9.1 μm was demonstrated from a beam combined sampled grating distributed feedback laser array. The tunable laser was utilized for a fast sensing of methane under pulsed operation. Transmission spectra were obtained without any moving parts, which showed excellent agreement to a standard measurement made by a Fourier transform infrared spectrometer. [reprint (PDF)]
15.	Mid-infrared quantum cascade lasers with high wall plug efficiency Y. Bai, B. Gokden, S. Slivken, S.R. Darvish, S.A. Pour, and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0O-- January 26, 2009 ...[Visit Journal] We demonstrate optimization of continuous wave (cw) operation of 4.6 µm quantum cascade lasers (QCLs). A 19.7 µm by 5 mm, double channel processed device exhibits 33% cw WPE at 80 K. Room temperature cw WPE as high as 12.5% is obtained from a 10.6 µm by 4.8 mm device, epilayer-down bonded on a diamond submount. With the semi-insulating regrowth in a buried ridge geometry, 15% WPE is obtained with 2.8 W total output power in cw mode at room temperature. This accomplishment is achieved by systematically decreasing the parasitic voltage drop, reducing the waveguide loss and improving the thermal management. [reprint (PDF)]
15.	Ga₂O₃ Metal-oxide-semiconductor Field Effect Transistors on Sapphire Substrate by MOCVD Ji-Hyeon Park, Ryan McClintock and Manijeh Razeghi Semiconductor Science and Technology, Volume 34, Number 8-- June 26, 2019 ...[Visit Journal] Si-doped gallium oxide (Ga₂O₃) thin films were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) and fabricated into metal oxide semiconductor field effect transistors (MOSFETs). The Ga₂O₃ MOSFETs exhibited effective gate modulation of the drain current with a complete channel pinch-off for VG < −25 V, and the three-terminal off-state breakdown voltage was 390 V. The device shows a very low gate leakage current (~50 pA/mm), which led to a high on/off ratio of ~10⁸. These transistor characteristics were stable from room temperature to 250 °C [reprint (PDF)]

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