Center for Quantum Devices - Most Downloaded Journal Articles

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14.	Solar-blind photodetectors based on Ga₂O₃ and III-nitrides Ryan McClintock; Alexandre Jaud; Lakshay Gautam; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128803-- January 31, 2020 ...[Visit Journal] Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga₂O₃ thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga₂O₃. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a −2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ~100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors. [reprint (PDF)]
14.	High power, electrically tunable quantum cascade lasers Steven Slivken; Manijeh Razeghi Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics-- February 13, 2016 ...[Visit Journal] Mid-infrared laser sources (3-14 μm wavelengths) which have wide spectral coverage and high output power are attractive for many applications. This spectral range contains unique absorption fingerprints of most molecules, including toxins, explosives, and nerve agents. Infrared spectroscopy can also be used to detect important biomarkers, which can be used for medical diagnostics by means of breath analysis. The challenge is to produce a broadband midinfrared source which is small, lightweight, robust, and inexpensive. We are currently investigating monolithic solutions using quantum cascade lasers. A wide gain bandwidth is not sufficient to make an ideal spectroscopy source. Single mode output with rapid tuning is desirable. For dynamic wavelength selection, our group is developing multi-section laser geometries with wide electrical tuning (hundreds of cm-1). These devices are roughly the same size as a traditional quantum cascade lasers, but tuning is accomplished without any external optical components. When combined with suitable amplifiers, these lasers are capable of multi-Watt single mode output powers. This manuscript will describe our current research efforts and the potential for high performance, broadband electrical tuning with the quantum cascade laser. [reprint (PDF)]
14.	High-power laser diodes based on InGaAsP alloys M. Razeghi Nature, Vol.369, p.631-633-- June 23, 1994 ...[Visit Journal] HIGH-POWER, high-coherence solid-state lasers, based on dielectric materials such as ruby or Nd:YAG (yttrium aluminium garnet), have many civilian and military applications. The active media in these lasers are insulating, and must therefore be excited (or ‘pumped’) by optical, rather than electrical, means. Conventional gas-discharge lamps can be used as the pumping source, but semiconductor diode lasers are more efficient, as their wavelength can be tailored to match the absorption properties of the lasing material. Semiconducting AlGaAs alloys are widely used for this purpose, but oxidation of the aluminium and the spreading of defects during device operation limit the lifetime of the diodes3, and hence the reliability of the system as a whole. Aluminium-free InGaAsP compounds, on the other hand, do not have these lifetime-limiting properties. We report here the fabrication of high-power lasers based on InGaAsP (lattice-matched to GaAs substrates), which operate over the same wavelength range as conventional AlGaAs laser diodes and show significantly improved reliability. The other optical and electrical properties of these diodes are either comparable or superior to those of the AlGaAs system. [reprint (PDF)]
14.	Growth of Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi SPIE Conference, Jose, CA, Vol. 5359, pp. 400-- January 25, 2004 ...[Visit Journal] We demonstrate high power AlGaN based ultraviolet light-emitting diodes (UV LEDs) with an emission wavelength of 280 nm using an asymmetric single quantum well active layer configuration on top of a high-quality AlGaN/AlN template layer grown by metalorganic chemical vapor deposition (MOCVD). An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 µm × 300 µm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. [reprint (PDF)]
14.	Sandwich method to grow high quality AlN by MOCVD Demir , H Li, Y Robin, R McClintock, S Elagoz and M Razeghi Journal of Physics D: Applied Physics 51, pp. 085104-- February 7, 2018 ...[Visit Journal] We report pulsed atomic layer epitaxy growth of a very high crystalline quality, thick (~2 µm) and crack-free AlN material on c-plane sapphire substrates via a sandwich method using metal organic chemical vapor deposition. This sandwich method involves the introduction of a relatively low temperature (1050 °C) 1500 nm thick AlN layer between two 250 nm thick AlN layers which are grown at higher temperature (1170 °C). The surface morphology and crystalline quality remarkably improve using this sandwich method. A 2 µm thick AlN layer was realized with 33 arcsec and 136 arcsec full width at half maximum values for symmetric and asymmetric reflections of ω-scan, respectively, and it has an atomic force microscopy root-mean-square surface roughness of ~0.71 nm for a 5 × 5 µm² surface area. [reprint (PDF)]
14.	Gain-length scaling in quantum dot/quantum well infrared photodetectors T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi Applied Physics Letters, Vol. 95, No. 9-- August 31, 2009 ...[Visit Journal] The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed. [reprint (PDF)]
14.	Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, Y. El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P.L. Voss, M. Razeghi, A. Ougazzaden Journal of Crystal Growth, Volume 435, Pages 105-109-- November 7, 2015 ...[Visit Journal] p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscopy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process. [reprint (PDF)]
14.	Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures Y.-J. Chan; D. Pavlidis; M. Razeghi; F. Omnes IEEE TRANS. ELEC.DEVICES. 77. IO. 1990-- October 1, 1990 ...[Visit Journal] The DC and microwave characteristics of Ga/sub 0.51/In/sub 0.49/P/GaAs HEMTs grown by metalorganic chemical vapor deposition (MOCVD) are presented. Devices with 1- mu m-long gates show transconductances of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer are evaluated at low temperature by the threshold voltage shift and current collapse phenomena. GaInP/GaAs HEMTs show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively. [reprint (PDF)]
14.	Radiometric characterization of long-wavelength infrared type II strained layer superlattice focal plane array under low-photon irradiance conditions J. Hubbs, V. Nathan, M. Tidrow, and M. Razeghi Optical Engineering, Vol. 51, No. 6, p. 064002-1-- June 15, 2012 ...[Visit Journal] We present the results of the radiometric characterization of an “M” structure long wavelength infrared Type-II strained layer superlattice(SLS) infrared focal plane array (IRFPA) developed by Northwestern University (NWU). The performance of the M-structure SLS IRFPA was radiometrically characterized as a function of photon irradiance, integration time, operating temperature, and detector bias. Its performance is described using standard figures of merit: responsivity, noise, and noise equivalent irradiance. Assuming background limited performance operation at higher irradiances, the detector quantum efficiency for the SLS detector array is approximately 57%. The detector dark density at 80 K is 142 μA∕cm², which represents a factor of seven reduction from previously measured devices. [reprint (PDF)]
14.	Highly temperature insensitive quantum cascade lasers Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 97, No. 25-- December 20, 2010 ...[Visit Journal] An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T(0) and T(1), for operations above room temperature. A T(0) value of 383 K and a T(1) value of 645 K are obtained within a temperature range of 298–373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mm and a ridge width of 8 μm. [reprint (PDF)]
14.	Minority electron unipolar photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi Applied Physics Letters, Vol. 95, No. 18, p. 183502-- November 2, 2009 ...[Visit Journal] We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14 µm cutoff detector exhibits a dark current 3.3 mA·cm⁻², a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×10¹⁰ Jones. [reprint (PDF)]
14.	8.5 μm Room Temperature Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy S. Slivken and M. Razeghi SPIE Conference, San Jose, CA, -- January 28, 1998 ...[Visit Journal] We report room-temperature pulsed-mode operation of 8.5 μm quantum cascade lasers grown by gas-source molecular beam epitaxy. The theory necessary to understand the operation of the laser is presented and current problems are analyzed. Very good agreement is shown to exist between theoretical and experimental emission wavelengths. The high- temperature operation is achieved with 1 μs pulses at a repetition rate of 200 Hz. Peak output power in these conditions is in excess of 700 mW per 2 facets at 79 K and 25 mW at 300 K. Threshold current as a function of temperature shows an exponential dependence with T₀ equals 188 K for a 1.5 mm cavity. [reprint (PDF)]
14.	Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands Y. Guldner, J. P. Vieren, and M. Voos F. Delahaye and D. Dominguez J. P. Hirtz and M. Razeghi Phys. Rev. B 33, 3990 1986-- March 15, 1986 ...[Visit Journal] Quantum-Hall-effect and Shubnikov–de Haas measurements are presented for InxGa1−xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (𝑛𝑠≤5×1011 cm−2). The Shubnikov–de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2𝑒2 with an uncertainty of ∼10−8. [reprint (PDF)]
14.	Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides D.N. Hahn, G.T. Kiehne, G.K.L. Wong, J.B. Ketterson, P. Kung, A. Saxler and M. Razeghi Journal of Applied Physics 85 (5)-- March 1, 1999 ...[Visit Journal] Phase-matched optical second-harmonic (SH) generation was observed in GaN and AlN slab waveguides. Phase matching was achieved by waveguide modal dispersion. By tuning the output wavelength of an optical parametric amplifier, several phased-matched SH peaks were observed in the visible spectrum covering blue to red wavelengths. The peak positions are in agreement with the values calculated using the dispersive refractive indices of the film and substrate materials. [reprint (PDF)]
14.	First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate M. Razeghi; M. Defour; R. Blondeau; F. Omnes; P. Maurel; O. Acher; F. Brillouet; J. C. C‐Fan; J. Salerno Appl. Phys. Lett. 53, 2389–2390 (1988) -- December 12, 1988 ...[Visit Journal] We report the first successful room-temperature cw operations of a GaO. 25 1110.75 ASo. 5 po. s -InP buried ridge structure laser emitting at 1.3 f-tm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 m W with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 rnA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (Ill 11,;;5%). [reprint (PDF)]
14.	Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors Chuanle Zhou, I. Vurgaftman, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, J. R. Meyer, A. Hoang, A. Haddadi, M. Razeghi, and M. Grayson Optical Materials Express. 2013;3(10):1632-1640.-- October 1, 2013 ...[Visit Journal] The in-plane and cross-plane thermal conductivities of the cladding layers and active quantum wells of interband cascade lasers and type-II superlattice infrared detector are measured by the 2-wire 3ω method. The layers investigated include InAs/AlSb superlattice cladding layers, InAs/GaInSb/InAs/AlSb W-active quantum wells, an InAs/GaSb superlattice absorber, an InAs/GaSb/AlSb M-structure, and an AlAsSb digital alloy. The in-plane thermal conductivity of the InAs/AlSb superlattice is 4-5 times higher than the cross-plane value. The isotropic thermal conductivity of the AlAsSb digital alloy matches a theoretical expectation, but it is one order of magnitude lower than the only previously-reported experimental value. [reprint (PDF)]
14.	MOCVD Growth of ZnO Nanostructures Using Au Droplets as Catalysts V.E. Sandana, D.J. Rogers, F.H. Teherani, R. McClintock, M. Razeghi, H.J. Drouhin, M.C. Clochard, V. Sallett, G. Garry and F. Fayoud SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Zinc Oxide Materials and Devices III, Vol. 6895, p. 68950Z-1-6.-- February 1, 2008 ...[Visit Journal] ZnO nanostructures were synthesised by Metal Organic Chemical Vapor Deposition growth on Si (100) and c-Al₂O₃ substrates coated with a 5nm thick layer of Au. The Au coated substrates were annealed in air prior to deposition of ZnO so as to promote formation of Au nanodroplets. The development of the nanodroplets was studied as a function of annealing duration and temperature. Under optimised conditions, a relatively homogeneous distribution of regular Au nanodroplets was obtained. Using the Au nanodroplets as a catalyst, MOCVD growth of ZnO nanostructures was studied. Scanning electron microscopy revealed nanostructures with various forms including commonly observed structures such as nanorods, nanoneedles and nanotubes. Some novel nanostructures were also observed, however, which resembled twist pastries and bevelled-multifaceted table legs. [reprint (PDF)]
14.	Investigation of 0.8 μm InGaAsP-GaAs laser diodes with Multiple Quantum Wells J. Diaz, H. Yi, S. Kim, M. Erdtmann, L.J. Wang, I. Eliashevich, E. Bigan and M. Razeghi Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995 ...[Visit Journal] In this paper, we studied the effects of the active region structure (one, two and three quantum wells with same total thickness) for high-power InGaAsP-GaAs separate confinement heterostructure lasers emitting at 0.8 μm wavelength. Experimental results for the lasers grown by low pressure metalorganic chemical vapor deposition show excellent agreement with the theoretical model. Total output power of 47 W from an uncoated 1 cm-wide laser bar was achieved in quasi-continuous wave operation [reprint (PDF)]
14.	High-Performance Focal Plane Arrays Based on InAs-GaSb Superlattices with a 10-micron Cutoff Wavelegth P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi IEEE Journal of Quantum Electronics, Vol. 44, No. 5, p. 462-467-- May 1, 2008 ...[Visit Journal] We report on the demonstration of a focal plane array based on Type-II InAs/GaSb superlattices grown on N-type GaSb substrate with a 50%-cutoff wavelength at 10 μm. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R₀A of diodes passivated with SiO₂ was 23 Ω·cm² after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms. [reprint (PDF)]
14.	High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system M. Razeghi SPIE Proceedings, San Jose, CA Volume 7230-11-- January 26, 2009 ...[Visit Journal] The latest result at the Center for Quantum Devices about high power, high wall plug efficiency, mid-infrared quantum cascade lasers (QCLs) is presented. At an emitting wavelength of 4.8 µm, an output power of 3.4 W and a wall plug efficiency of 16.5% are demonstrated from a single device operating in continuous wave at room temperature. At a longer wavelength of 10.2 µm, average power as high as 2.2 W is demonstrated at room temperature. Gas-source molecular beam epitaxy is used to grow the QCL core in an InP/GaInAs/InAlAs material system. Fe-doped semiinsulating regrowth is performed by metal organic chemical vapor deposition for efficient heat removal and low waveguide loss. This accomplishment marks an important milestone in the development of high performance midinfrared QCLs. [reprint (PDF)]
14.	GaN nanostructured p-i-n photodiodes J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi Applied Physics Letters, Vol. 93, No. 22, p. 221104-1-- December 1, 2008 ...[Visit Journal] We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 µm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at −5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars. [reprint (PDF)]
14.	Low irradiance background limited type-II superlattice MWIR M-barrier imager E.K. Huang, S. Abdollahi Pour, M.A. Hoang, A. Haddadi, M. Razeghi and M.Z. Tidrow OSA Optics Letters (OL), Vol. 37, No. 11, p. 2025-2027-- June 1, 2012 ...[Visit Journal] We report a type-II superlattice mid-wave infrared 320 × 256 imager at 81 K with the M-barrier design that achieved background limited performance (BLIP) and ∼99%operability. The 280 K blackbody’s photon irradiance was limited by an aperture and a band-pass filter from 3.6 μm to 3.8 μm resulting in a total flux of ∼5 × 10¹² ph·cm⁻²·s⁻¹. Under these low-light conditions, and consequently the use of a 13.5 ms integration time, the imager was observed to be BLIP thanks to a ∼5 pA dark current from the 27 μm wide pixels. The total noise was dominated by the photon flux and read-out circuit which gave the imager a noise equivalent input of ∼5 × 10¹⁰ ph·cm⁻²·s⁻¹ and temperature sensitivity of 9 mK with F∕2.3 optics. Excellent imagery obtained using a 1-point correction alludes to the array’s uniform responsivity. [reprint (PDF)]
14.	Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, R. McClintock Infrared Physics & Technology, Volume 59, Pages 41-52 (2013)-- July 1, 2013 ...[Visit Journal] Type-II InAs/GaSb superlattices (T2SLs), a system of multi-interacting quantum wells, was introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention especially for infrared detection. In recent years, T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photo-detectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of T2SL-based photo-detectors and focal plane arrays for imaging in different infrared regions, from SWIR to VLWIR, and the future outlook of this material system. [reprint (PDF)]
14.	Passivation of Type-II InAs/GaSb superlattice photodetectors A. Hood, Y. Wei, A. Gin, M. Razeghi, M. Tidrow, and V. Nathan SPIE Conference, Jose, CA, Vol. 5732, pp. 316-- January 22, 2005 ...[Visit Journal] Leakage currents limit the operation of high performance Type-II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 µm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of Type-II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R₀A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated Type-II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed. [reprint (PDF)]
14.	High performance quantum cascade lasers (~11 μm) operating at high temperature (T>= 425K) A. Tahraoui, A. Matlis, S. Slivken, J. Diaz, and M. Razeghi Applied Physics Letters 78 (4)-- January 22, 2001 ...[Visit Journal] We report record-low threshold current density and high output power for λ ∼ 11 μm Al_0.48In_0.52As/Ga_0.47In_0.53As quantum cascade lasers operating up to 425 K. The threshold current density is 1.1, 3.83, and 7.08 kA/cm² at 80, 300, and 425 K, respectively, for 5 μs pulses at a 200 Hz repetition rate. The cavity length is 3 mm with a stripe width of 20 μm. The maximum peak output power per facet is 1 W at 80 K, 0.5 W at 300 K, and more than 75 mW at 425 K. The characteristic temperature of these lasers is 174 K between 80 and 300 K and 218 K in the range of 300–425 K. [reprint (PDF)]

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