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1.  Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
M. Razeghi; M. Defour; F. Omnes; M. Dobers; J. P. Vieren; Y. Guldner
Appl. Phys. Lett. 55, 457–459 (1989)-- June 17, 1989 ...[Visit Journal]
On studying the magnetoresistivity of GaAs-GalnP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2 / (V s) at an electron density of 4.1 X lOll cm- 2 . This high electron mobility is confirmed by cyclotron resonance measurements< [reprint (PDF)]
 
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