Center for Quantum Devices - Most Downloaded Journal Articles

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13.	Intermixing of GaInP/GaAs Multiple Quantum Wells C. Francis, M.A. Bradley, P. Boucaud, F.H. Julien and M. Razeghi Applied Physics Letters 62 (2)-- January 11, 1993 ...[Visit Journal] The intermixing of GaInP‐GaAs superlattices induced by a heat treatment is investigated as a function of the annealing temperature and duration. Photoluminescence experiments reveal a large red shift of the effective band gap of the annealed quantum wells thus indicating a dominant self‐diffusion of the group III atoms which is confirmed by secondary ion mass spectroscopic measurements. For long enough annealing durations, the red shift saturates and even decreases due to the competing slower self‐diffusion of the group V atoms. Experiments are well understood based on a simple diffusion model. [reprint (PDF)]
13.	Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Undoped Ga2O3 MSM Photodetectors Grown by Pulsed Laser Deposition D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden & M. Razeghi Proc. SPIE 11687 (2021) 116872D-1 ...[Visit Journal] Ga2O3layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3(monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias. [reprint (PDF)]
13.	ZnO nanorod electrodes for hydrogen evolution and storage Harinipriya, S.; Usmani, B.; Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Lusson, A.; Bove, P.; Drouhin, H.-J.; Razeghi, M. Proc. SPIE 8263, Oxide-based Materials and Devices III, 82631Y (February 9, 2012)-- February 9, 2012 ...[Visit Journal] Due to the attractive combination of a relatively high specific heat of combustion with a large specific energy capacity, molecular hydrogen (H2) is being investigated for use as an alternative to fossil fuels. Energy-efficient H₂ production and safe storage remain key technical obstacles to implementation of an H₂ based economy, however. ZnO has been investigated for use as an alternative photocatalytic electrode to TiO₂ for solarpowered photo-electro-chemical (PEC) electrolysis, in which H₂ is generated by direct water splitting in a cell with a metal cathode and a semiconducting anode. In this investigation, ZnO NR grown on Si (100) substrates by pulsed laser deposition were investigated for use as electrodes in the Hydrogen Evolution Reaction (HER). The electrochemical potential and Fermi energy of the ZnO NR were estimated from the electrochemical current density in acid and alkaline solutions via phenomenological thermodynamic analysis. As well as acting as an effective electrocalytic cathode, the ZnO NR appear to operate as a hydrogen reservoir. These results indicate that the ZnO NR have excellent potential for the storage of evolved H₂. [reprint (PDF)]
13.	Fabrication of Indium Bumps for Hybrid Infrared Focal Plane Array Applications J. Jiang, S. Tsao, T. O'Sullivan, M. Razeghi, and G.J. Brown Infrared Physics and Technology, 45 (2)-- March 1, 2004 ...[Visit Journal] Hybrid infrared focal plane arrays (FPAs) have found many applications. In hybrid IR FPAs, FPA and Si read out integrated circuits (ROICs) are bonded together with indium bumps by flip-chip bonding. Taller and higher uniformity indium bumps are always being pursued in FPA fabrication. In this paper, two indium bump fabrication processes based on evaporation and electroplating techniques are developed. Issues related to each fabrication technique are addressed in detail. The evaporation technique is based on a unique positive lithography process. The electroplating method achieves taller indium bumps with a high aspect ratio by a unique “multi-stack” technique. This technique could potentially benefit the fabrication of multi-color FPAs. Finally, a proposed low-cost indium bump fabrication technique, the “bump transfer”, is given as a future technology for hybrid IR FPA fabrication. [reprint (PDF)]
13.	Band gap tunability of Type-II Antimonide-based superlattices M. Razeghi and B.M. Nguyen Physics Procedia, Vol. 3, Issue 2, p. 1207-1212 (14th International Conference on Narrow Gap Semiconductors and Systems NGSS-14, Sendai, Japan, July 13-17, 2009)-- January 31, 2010 ...[Visit Journal] Current state-of-the art infrared photon detectors based on bulk semiconductors such as InSb or HgCdTe are now relatively mature and have almost attained the theoretical limit of performance. It means, however, that the technology can not be expected to demonstrate revolutionary improvements, in terms of device performances. In contrasts, low dimensional quantum systems such as superlattices, quantum wells, quantum dots, are still the development stage, yet have shown comparable performance to the bulk detector family. Especially for the Type-II Antimony-based superlattices, recent years have seen significant improvements in material quality, structural design as well as fabrication techniques which lift the performance of Type-II superlattice photodetectors to a new level. In this talk, we will discuss the advantages of Type-II-superlattices, from the physical nature of the material to the practical realisms. We will demonstrate the flexibility in controlling the energy gap and their overall band alignment for the suppression of Auger recombination, as well as to create sophisticated hetero-designs. [reprint (PDF)]
13.	2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers Q.Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 98, No. 18, p. 181106-1-- May 4, 2011 ...[Visit Journal] We demonstrate high power continuous-wave room-temperature operation surface-grating distributed feedback quantum cascade lasers at 4.8 μm. High power single mode operation benefits from a combination of high-reflection and antireflection coatings. Maximum single-facet continuous-wave output power of 2.4 W and peak wall plug efficiency of 10% from one facet is obtained at 298 K. Single mode operation with a side mode suppression ratio of 30 dB and single-lobed far field without beam steering is observed. [reprint (PDF)]
13.	First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate M. Razeghi; R. Blondeau; M. Defour; F. Omnes; P. Maurel; F. Brillouet Appl. Phys. Lett. 53, 854–855 (1988)-- July 4, 1988 ...[Visit Journal] We report in this letter the first successful fabrication of an InP-GalnAsP light-emitting diode, emitting at 1.15 pm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 rnA), and showed no degradation. [reprint (PDF)]
13.	Review of III-Nitride Optoelectronic Materials for light Emission and Detection M. Razeghi, A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, and P. Kung Physica Status Solidi C S141 - S148-- September 10, 2004 ...[Visit Journal] We review the significant achievements relating to optoelectronic devices based on III-nitrides at the center for quantum devices (CQD). Based on GaN/InGaN multiple-quantum well structures, we demonstrated blue laser diodes at a wavelength of 405 nm. This achievement was particularly significant at the time, because while no defect reduction technique was used, a fairly low threshold current density was achieved (3.8 kA/cm²). In the past few years, however, the interest has shifted towards shorter wavelength light emitters, i.e. ultraviolet LEDs and LDs. Lower crystalline quality and unsatisfactory doping levels of AlGaN compound semiconductors posed serious challenges en route to the realization of UV light emitters. However, steady progress in the growth of AlGaN and AlN epilayers made it possible to overcome some of the difficulties. To date, we have been able to demonstrate UV LEDs at wavelengths as short as 265 nm (corresponding to 45% Al in Al_xGa_1-xN) with optical output powers of over 5 mW. We have addressed the n-type AlGaN doping problem by using a Si-In co-doped scheme. We also employed high-quality AlGaN/AlN superlattice templates for the reduction of defects. We have also demonstrated 280 nm UV LEDs with output powers of over 6 mW and external quantum efficiencies of over 0.25%. Despite all the success in the realization of short-wavelength UV LEDs, UV laser diodes at these short wavelengths are yet to be realized. The main difficulties are the low material quality, high device resistance leading to excessive heating of the device, realization of smooth cavity mirrors, and issues related to the cracking of the material. We have also demonstrated different types of photodetectors in the UV range of the spectrum: photoconductors, MSM photodetector, Schottky barrier photodetectors, and p-i-n photodiodes to name a few. The most promising type of photodetector for realization of UV imaging focal plane arrays is the p-i-n photodiode. Realization of high-efficiency AlGaN-based p-i-n photodiodes becomes more difficult when considering the need for the collection of the light from the backside of the substrate. However, similar to our back-emission UV LED structure, we have demonstrated back-illuminated p-i-n solar-blind photodiodes with external quantum efficiencies as high as 68% under no applied bias and 74% under -5 V of bias. [reprint (PDF)]
13.	Short Wavelength Solar-Blind Detectors: Status, Prospects, and Markets M. Razeghi IEEE Proceedings, Wide Bandgap Semiconductor Devices: The Third Generation Semiconductor Comes of Age 90 (6)-- June 1, 2002 ...[Visit Journal] Recent advances in the research work on III-nitride semiconductors and Al_xGa_1-xN materials in particular has renewed the interest and led to significant progress in the development of ultraviolet (UV) photodetectors able to detect light in the mid- and near-UV spectral region (λ∼200-400 nm). There have been a growing number of applications which require the use of such sensors and, in many of these, it is important to be able to sense UV light without detecting infrared or visible light, especially from the Sun, in order to minimize the chances of false detection or high background. The research work on short-wavelength UV detectors has, therefore, been recently focused on realizing short-wavelength "solar-blind" detectors which, by definition, are insensitive to photons with wavelengths longer than ∼285 nm. In this paper the development of Al_xGa_1-xN-based solar-blind UV detectors will be reviewed. The technological issues pertaining to material synthesis and device fabrication will be discussed. The current state-of-the-art and future prospects for these detectors will be reviewed and discussed. [reprint (PDF)]
13.	Dark current reduction in microjunction-based compound electron barrier type-II InAs/InAs1-xSbx superlattice-based long-wavelength infrared photodetectors Romain Chevallier, Abbas Haddadi, Manijeh Razeghi Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV Page. 1054007-1-- January 26, 2018 ...[Visit Journal] Reduction of dark current density in microjunction-based InAs/InAs_1-xSb_x type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface dark currents. The photodetectors exhibited high surface resistivity after passivation with SiO₂, which permits the use of small size features without having strong surface leakage current degrading the electrical performance. Fabricating a microjunction structure (25×25 μm² mesas with 10×10 μm² microjunctions) with this photodetector double barrier design results in a dark current density of 6.3×10^-6 A/cm² at 77 K. The device has an 8 μm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 μm-thick absorption region, which results in a specific detectivity value of 1.2×10¹² cm·Hz^1/2/W at 77 K. [reprint (PDF)]
13.	Kinetics of photoconductivity in n-type GaN photodetector P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, and M. Razeghi Applied Physics Letters 67 (25)-- December 18, 1995 ...[Visit Journal] High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency‐dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation‐dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. [reprint (PDF)]
13.	Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 µm B.M. Nguyen, D. Hoffman, Y. Wei, P.Y. Delaunay, A. Hood and M. Razeghi Applied Physics Letters, Vol. 90, No. 23, p. 231108-1-- June 4, 2007 ...[Visit Journal] The authors report the dependence of the quantum efficiency on device thickness of Type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12 µm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 µm cutoff wavelength photodiodes with a -region thickness of 6.0 µm. The R₀A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×10¹¹ cm·Hz^½/W). [reprint (PDF)]
13.	Dual section quantum cascade lasers with wide electrical tuning S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q.Y. Lu and M. Razeghi SPIE Proceedings, Vol. 8631, p. 86310P-1, Photonics West, San Francisco, CA-- February 3, 2013 ...[Visit Journal] This paper describes our development efforts at Northwestern University regarding dual-section sampled grating distributed feedback (SGDFB) QCLs. These devices are the same size, but have much wider electrical tuning, than a traditional DFB laser. In this paper, I will show how we have dramatically extended the monolithic tuning range of high power quantum cascade lasers with high side mode suppression. This includes individual laser element tuning of up to 50 cm^-1 and 24 dB average side mode suppression. These lasers are capable of room temperature continuous operation with high power (>100 mW) output. Additionally, we have demonstrated a broad spectral coverage of over 350 cm^-1 on a single chip, which is equivalent to 87.5% of the gain bandwidth. The eventual goal is to realize an extended array of such laser modules in order to continuously cover a similar or broader spectral range, similar to an external cavity device without any external components. [reprint (PDF)]
13.	Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2substrates P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, and M. Razeghi Applied Physics Letters 69 (14)-- September 30, 1996 ...[Visit Journal] We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO₂ substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence. [reprint (PDF)]
13.	InTlSb alloys for infrared detection E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi Proceedings, SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Vol. 2145-- January 24, 1994 ...[Visit Journal] InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 10⁹ cm·Hz^½·W^-1 at 7 μm operating wavelength. [reprint (PDF)]
13.	Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy Lakshay Gautam , Junhee Lee, Michael Richards, and Manijeh Razeghi , Lakshay Gautam, Manijeh Razeghi, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 59, NO. 6, 10.1109/JQE.2023.3325254 ...[Visit Journal] We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of 320 × 256 focal plane array. [reprint (PDF)]
13.	Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) Chu-Young Cho, Yinjun Zhang, Erdem Cicek, Benjamin Rahnema, Yanbo Bai, Ryan McClintock, and Manijeh Razeghi Appl. Phys. Lett. 102, 211110 (2013)-- May 31, 2013 ...[Visit Journal] We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer. [reprint (PDF)]
13.	Room-temperature, high-power and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ~ 9.6 µm S.R. Darvish, S. Slivken, A. Evans, J.S. Yu, and M. Razeghi Applied Physics Letters, 88 (20)-- May 15, 2006 ...[Visit Journal] High-power continuous-wave (cw) operation of distributed-feedback quantum-cascade lasers is reported. Continuous-wave output powers of 100 mW at 25 °C and 20 mW at 50 °C are obtained. The device exhibits a cw threshold current density of 1.34 kA/cm², a maximum cw wall-plug efficiency of 1% at 25 °C, and a characteristic temperature of ~190 K in pulsed mode. Single-mode emission near 9.6 μm with a side-mode suppression ratio of ≥ 30 dB and a tuning range of 2.89 cm^–1 from 15 to 50 °C is obtained. [reprint (PDF)]
13.	High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector S. Tsao, H. Lim, W. Zhang, and M. Razeghi Applied Physics Letters, Vol. 90, No. 20, p. 201109-- May 14, 2007 ...[Visit Journal] This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 µm, a responsivity of 34 mA/W, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K. [reprint (PDF)]
13.	High quantum efficiency back-illuminated GaN avalanche photodiodes C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, M.P. Ulmer, and D. Silversmith Applied Physics Letters, Vol. 93, No. 21, p. 211107-1-- November 24, 2008 ...[Visit Journal] Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs. [reprint (PDF)]
13.	EPR Investigations of a Structural Phase Change in Lead Phosphate M. RAZEGHI M. RAZEGHI: EPR Investigations of a Structural Phase Change phys. stat. sol. (b) 108, 175 (1981)-- November 1, 1981 ...[Visit Journal] The temperature dependence of the EPR line width of the Mn2+ and Gd3+ in Pb3(PO4)2 is investigated from -270 to 500 °C. At the first-order ferroelastic transition point (180 °C), an abrupt change in the fine-structure splitting as well as in the resonance line width is observed. Various contributions to fine structure D and E parameters of Mn2+ and Gd3+ are computed, using a point-multipole model. For temperatures near to Tc the correlation time of the fluctuations is estimated to be greater than 10−9. [reprint (PDF)]
13.	Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates J.J. Lee, J.D. Kim, and M. Razeghi Applied Physics Letters 73 (5)-- August 3, 1998 ...[Visit Journal] We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×10⁶ cm·Hz^½/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. [reprint (PDF)]
13.	Optical losses of Al-free lasers for λ = 0.808 and 0.98 μm H. Yi, J. Diaz, B. Lane, and M. Razeghi Applied Physics Letters 69 (20)-- November 11, 1996 ...[Visit Journal] In this work, we study the origin of the optical losses in Al‐free InGaAsP/GaAs (λ=0.808 μm) and InGaAs/GaAs/InGaP (λ=0.980 μm) lasers. Theoretical modeling and the experimental results indicate that the scattering of the laser beam by refractive index fluctuation in the alloys is the dominant loss in our lasers, and the loss due to the free‐carrier absorption and scattering by interface roughness are negligible. [reprint (PDF)]
13.	High magnetic field studies of the two‐dimensional electron gas in GaInAs‐InP superlattices J. C. Portal; R. J. Nicholas; M. A. Brummell; M. Razeghi; M. A. Poisson J. C. Portal, R. J. Nicholas, M. A. Brummell, M. Razeghi, M. A. Poisson; High magnetic field studies of the two‐dimensional electron gas in GaInAs‐InP superlattices. Appl. Phys. Lett. 1 August 1983; 43 (3): 293–295.-- August 1, 1983 ...[Visit Journal] We report the observation of Shubnikov–de Haas oscillations in superlattices of GaInAs and InP, showing evidence of two‐dimensional behavior. The electron g‐factor is deduced from both the criteria for resolution of a spin splitting by comparison with the broadening parameter Γ, and from the tilted field method, and is shown to increase with increasing resolution of the Landau levels in a manner consistent with the theory of Ando and Uemura. In the ultraquantum limit, structure at ν=1/2 and ν=1/3 is observed. [reprint (PDF)]
13.	Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition D. Biswas; N. Debbar; P. Bhattacharya; M. Razeghi; M. Defour; F. Omnes Appl. Phys. Lett. 56, 833–835 (1990)-- February 26, 1990 ...[Visit Journal] We have independently estimated the conduction- and valence-band offsets D.Ec and D.Ev in GaAs/Gao . 51 Ino49 P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wens. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of AEc and AEv are 0.198 and 0.285 eV, respectively. [reprint (PDF)]

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