Center for Quantum Devices - Most Downloaded Journal Articles

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16.	EPR Investigations of a Structural Phase Change in Lead Phosphate M. RAZEGHI M. RAZEGHI: EPR Investigations of a Structural Phase Change phys. stat. sol. (b) 108, 175 (1981)-- November 1, 1981 ...[Visit Journal] The temperature dependence of the EPR line width of the Mn2+ and Gd3+ in Pb3(PO4)2 is investigated from -270 to 500 °C. At the first-order ferroelastic transition point (180 °C), an abrupt change in the fine-structure splitting as well as in the resonance line width is observed. Various contributions to fine structure D and E parameters of Mn2+ and Gd3+ are computed, using a point-multipole model. For temperatures near to Tc the correlation time of the fluctuations is estimated to be greater than 10−9. [reprint (PDF)]
16.	Room temperature operation of Ge/SixGe1−x−ySny terahertz quantum cascade lasers predicted using extended combined resonant tunneling and rate equation model Zhou Li,, Zhichao Chen, Baiqi Zhang, Qiyun Lai, Zhanfeng Jiang, Yaoyao Liang Yulong Fan, Haoxiang Li, Qi Qin, Manijeh Razeghi∗, and Feihu Wang∗ J Appl Phys 138 (23) (2025) ...[Visit Journal] Raising operation temperature of terahertz (THz) quantum cascade lasers (QCLs) to room temperature remains a key challenge in QCL community. Group-IV semiconductors are believed to be a promising solution to this problem since the polar phonon–electron scattering is negligible at elevated temperature. Here, we develop a theoretical model for THz QCL development. This model is established on the combined resonant tunneling and rate equation framework and is extended to be applicable for group-IV QCL design through introducing new scattering mechanisms and continuum states carrier leakage. A two-well THz QCL based on a direct phonon extraction strategy is designed and predicted to be capable of working above 300 K. This result lays the foundation for future room temperature THz QCL devices development using group-IV semiconductors. [reprint (PDF)]
16.	Electrically pumped photonic crystal distributed feedback quantum cascade lasers Y. Bai, S.R. Darvish, S. Slivken, P. Sung, J. Nguyen, A. Evans, W. Zhang, and M. Razeghi Applied Physics Letters, Vol. 91, No. 14, p. 141123-1-- October 1, 2007 ...[Visit Journal] We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback (PCDFB) quantum cascade lasers emitting at ~4.75 µm. Ridge waveguides of 100 µm width were fabricated with both PCDFB and Fabry-Pérot feedback mechanisms. The Fabry-Pérot device has a broad emitting spectrum and a double lobed far-field character. The PCDFB device, as expected, has primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half maximum of 2.4°. This accomplishment represents the first step in power scaling of single mode, midinfrared laser diodes operating at room temperature. [reprint (PDF)]
16.	InTlSb alloys for infrared detection E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi Proceedings, SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Vol. 2145-- January 24, 1994 ...[Visit Journal] InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 10⁹ cm·Hz^½·W^-1 at 7 μm operating wavelength. [reprint (PDF)]
16.	Second harmonic generation in hexagonal silicon carbide P.M. Lundquist, W.P. Lin, G.K. Wong, M. Razeghi, and J.B. Ketterson Applied Physics Letters 66 (15)-- April 10, 1995 ...[Visit Journal] We report optical second harmonic generation measurements in single crystal α-SiC of polytype 6H. The angular dependence of second harmonic intensity was consistent with two independent nonvanishing second order susceptibility components, as expected for a crystal with hexagonal symmetry. For the fundamental wavelength of 1.064 μm the magnitudes of the two components were determined to be χ_zzz⁽²⁾=±1.2×10⁻⁷ and χ_zxx⁽²⁾=∓1.2×10⁻⁸ esu. The corresponding linear electro‐optic coefficient computed from this value is r^zzz=±100 pm/V. The wavelength dependence of the nonlinear susceptibility was examined for second harmonic wavelengths between the bandgap (400 nm) and the red (700 nm), and was found to be relatively uniform over this region. The refractory nature of this compound and its large nonlinear optical coefficients make it an attractive candidate for high power nonlinear optical waveguide applications. [reprint (PDF)]
16.	High operability 1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi AIP Conference Proceedings, Vol. 1416, p. 56-58_NGS15 Conf_Blacksburg, VA_Aug 1-5, 2011-- December 31, 2011 ...[Visit Journal] Fabrication and characterization of a high performance 1024×1024 long wavelength infrared type‐II superlattice focal plane array are described. The FPA performs imaging at a continous rate of 15.00 frames/sec. Each pixel has pitch of 18μm with a fill factor of 71.31%. It demonstrates excellent operability of 95.8% and 97.4% at 81 and 68K operation temperature. The external quantum efficiency is ∼81% without any antireflective coating. Using F∕2 optics and an integration time of 0.13ms, the FPA exhibits an NEDT as low as 27 and 19mK at operating temperatures of 81 and 68K respectively. [reprint (PDF)]
16.	Background limited performance of long wavelength infrared focal plane arrays fabricated from type-II InAs/GaSb M-structure superlattice P.Y. Delaunay, B.M. Nguyen and M. Razeghi SPIE Porceedings, Vol. 7298, Orlando, FL 2009, p. 72981Q-- April 13, 2009 ...[Visit Journal] Recent advances in growth techniques, structure design and processing have lifted the performance of Type-II InAs/GaSb superlattice photodetectors. The introduction of a M-structure design improved both the dark current and R0A of Type-II photodiodes. This new structure combined with a thick absorbing region demonstrated background limited performance at 77K for a 300K background and a 2-π field of view. A focal plane array with a 9.6 μm 50% cutoff wavelength was fabricated with this design and characterized at 80K. The dark current of individual pixels was measured around 1.3 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without anti-reflective coating was 72%. The noise equivalent temperature difference reached 23 mK. The deposition of an anti-reflective coating improved the NEDT to 20 mK and the quantum efficiency to 89%. [reprint (PDF)]
16.	High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs_1-xSb_x superlattice photodetector by MOCVD Donghai Wu, Arash Dehzangi, Jiakai Li, and Manijeh Razeghi Appl. Phys. Lett. 116, 161108-- April 21, 2020 ...[Visit Journal] We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs_1-xSb_x superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77K, the photodetector exhibits a peak responsivity of 0.70A/W at 3.65λ, corresponding to a quantum efﬁciency of 24% at zero bias without anti-reﬂection coating, with a 50% cutoff wavelength of 4.28λ. With an R₀A value of 3.2x10⁵ Ω·cm² and a dark current density of 9.6x10^-8 A/cm² bias of -20mV at 77K, the photodetector exhibits a speciﬁc detectivity of 2.9x10¹²cm·Hz^½/W. At 150K, the photodetector exhibits a dark current density of 9.1x10^-6 A/cm² and a quantum efﬁciency of 25%, resulting in a detectivity of 3.4x10¹¹cm·Hz/W. [reprint (PDF)]
16.	Fabrication of GaN Nanotubular Material using MOCVD with an Aluminium Oxide Membrane W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi Nanotechnology 17-- January 1, 2006 ...[Visit Journal] GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a template. Gallium nitride is deposited at the inner wall of the nanoholes in the aluminium oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis conditions in MOCVD are obtained successfully for the gallium nitride nanotubular material in this research. The diameter of the GaN nanotube fabricated is approximately 200–250 nm and the wall thickness is about 40–50 nm. [reprint (PDF)]
16.	UV photodetectors based on Al_xGa_1-xN grown by MOCVD A. Saxler, D. Walker, X. Zhang, P. Kung, J. Xu, and M. Razeghi SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685-- January 27, 1996 ...[Visit Journal] Metalorganic chemical vapor deposition was used to deposit Al_xGa_1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. Al_xGa_1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity. [reprint (PDF)]
16.	Tunability of intersubband absorption from 4.5 to 5.3 µm in a GaN/Al_0.2Ga_0.8N superlattices grown by metalorganic chemical vapor deposition N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi Applied Physics Letters, Vol. 95, No. 13, p. 131109-- September 28, 2009 ...[Visit Journal] Intersubband (ISB) absorption at wavelengths as long as 5.3 µm is realized in GaN/Al_0.2Ga_0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al_0.2Ga_0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 µm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated. [reprint (PDF)]
16.	Long-Wavelength Infrared Photodetectors Based on InSbBi Grown on GaAs Substrates J.J. Lee, J.D. Kim, and M. Razeghi Applied Physics Letters 71 (16)-- October 20, 1997 ...[Visit Journal] We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 μm at 77 K. The responsivity of the InSbBi photodetector at 7 μm was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was 4.7×10⁸ cm· Hz^½/W. The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements. [reprint (PDF)]
16.	Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning Steven Slivken and Manijeh Razeghi Photonics 3, 41-- June 27, 2016 ...[Visit Journal] In an effort to overcome current limitations to electrical tuning of quantum cascade lasers, a strategy is proposed which combines heterogeneous quantum cascade laser gain engineering with sampled grating architectures. This approach seeks to not only widen the accessible spectral range for an individual emitter, but also compensate for functional non-uniformity of reflectivity and gain lineshapes. A trial laser with a dual wavelength core is presented which exhibits electroluminescence over a 750 cm⁻¹ range and discrete single mode laser emission over a 700 cm⁻¹ range. Electrical tuning over 180 cm⁻¹ is demonstrated with a simple sampled grating design. A path forward to even wider tuning is also described using more sophisticated gain and grating design principles. [reprint (PDF)]
16.	High-performance, continuous-wave operation of λ ~ 4.6 μm quantum-cascade lasers above room temperature J.S. Yu, S. Slivken, A. Evans and M. Razeghi IEEE Journal of Quantum Electronics, Vol. 44, No. 8, p. 747-754-- August 1, 2008 ...[Visit Journal] We report the high-performance continuous-wave (CW) operation of 10-μm-wide quantum-cascade lasers (QCLs) emitting at λ ~ 4.6 μm, based on the GaInAs–AlInAs material without regrowth, in epilayer-up and -down bonding configurations. The operational characteristics of QCLs such as the maximum average power, peak output power, CW output power, and maximum CW operating temperature are investigated, depending on cavity length. Also, important device parameters, i.e., the waveguide loss, the transparency current density, the modal gain, and the internal quantum efficiency, are calculated from length-dependent results. For a high-reflectivity (HR) coated 4-mm-long cavity with epilayer-up bonding, the highest maximum average output power of 633 mW is measured at 65% duty cycle, with 469 mW still observed at 100%. The laser exhibits the maximum wall-plug efficiencies of 8.6% and 3.1% at 298 K, in pulsed and CW operatons, respectively. From 298 to 393 K, the temperature dependent threshold current density in pulsed operation shows a high characteristic temperature of 200 K. The use of an epilayer-down bonding further improves the device performance. A CW output power of 685 mW at 288 K is achieved for the 4-micron-long cavity. At 298 K, the output power of 590 mW, threshold current density of 1.52 kA / cm2, and maximum wall-plug efficiency of 3.73% are obtained under CW mode, operating up to 363 K (90 °C). For HR coated 3-micron-long cavities, laser characteristics across the same processed wafer show a good uniformity across the area of 2 x 1 cm², giving similar output powers, threshold current densities, and emission wavelengths. The CW beam full-width at half-maximum of far-field patterns are 25 degree and 46 degree for the parallel and the perpendicular directions, respectively. [reprint (PDF)]
16.	InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi Applied Physics Letters 74 (23)-- June 7, 1999 ...[Visit Journal] We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm². [reprint (PDF)]
16.	Extended short wavelength infrared heterojunction phototransistors based on type II superlattices Arash Dehzangi , Ryan McClintock, Donghai Wu , Abbas Haddadi, Romain Chevallier , and Manijeh Razeghi Applied Physics Letters 114, 191109-- May 17, 2019 ...[Visit Journal] A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of 2.3 λ at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 X 10³ A/cm² and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 X 10¹¹ cm·Hz^½/W at 300 K which remains constant over a broad range of wavelengths and applied biases. [reprint (PDF)]
16.	First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate M. Razeghi; R. Blondeau; M. Defour; F. Omnes; P. Maurel; F. Brillouet Appl. Phys. Lett. 53, 854–855 (1988)-- July 4, 1988 ...[Visit Journal] We report in this letter the first successful fabrication of an InP-GalnAsP light-emitting diode, emitting at 1.15 pm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 rnA), and showed no degradation. [reprint (PDF)]
16.	Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices Abbas Haddadi, and Manijeh Razeghi Optics Letters Vol. 42, Iss. 21, pp. 4275-4278-- October 16, 2017 ...[Visit Journal] A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels’ 50% cutoff wavelengths were 2.3, 2.9, and 4.4μm, respectively, at 150K. The mid-wavelength channel exhibited a saturated quantum efficiency of 34% at 4μm under +200 mV bias voltage in a front-side illumination configuration and without any antireflection coating. At 200mV, the device exhibited a dark current density of 8.7×10⁻⁵ A/cm² providing a specific detectivity of ∼2×10¹¹ cm·Hz^1/2/W at 150K. The short-wavelength channel achieved a saturated quantum efficiency of 20% at 1.8μm. At −10 mV, the device’s dark current density was 5.5×10⁻⁸ A/cm². At zero bias, its specific detectivity was 1×10¹¹ cm·Hz^1/2/W at 150K. The extended short-wavelength channel achieved a saturated quantum efficiency of 22% at 2.75 μm. Under −2 V bias voltage, the device exhibited a dark current density of 1.8×10⁻⁶ A/cm² providing a specific detectivity of 6.3×10¹¹ cm·Hz^1/2/W at 150K. [reprint (PDF)]
16.	Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, M.Z. Tidrow, and V. Nathan IEEE Proceedings, Vol. 97, No. 6, p. 1056-1066-- June 1, 2009 ...[Visit Journal] In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R₀A - product LWIR Type – II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100 % fabricated in - house reaffirms the pioneer position of this university-based laboratory. [reprint (PDF)]
16.	Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency A. Evans, S.R. Darvish, S. Slivken, J. Nguyen, Y. Bai and M. Razeghi Applied Physics Letters, Vol. 91, No. 7, p. 071101-1-- August 13, 2007 ...[Visit Journal] The authors report on the development of ~4.7 µm strain-balanced InP-based quantum cascade lasers with high wall plug efficiency and room temperature continuous-wave operation. The use of narrow-ridge buried heterostructure waveguides and thermally optimized packaging is presented. Over 9.3% wall plug efficiency is reported at room temperature from a single device producing over 0.675 W of continuous-wave output power. Wall plug efficiencies greater than 18% are also reported for devices at a temperature of 150 K, with continuous-wave output powers of more than 1 W. [reprint (PDF)]
16.	Temperature insensitivity of the Al-free InGaAsP/GaAs lasers for λ = 808 and 908 nm M. Razeghi, H. Yi, J. Diaz, S. Kim, and M. Erdtmann SPIE Conference, San Jose, CA; Proceedings 3001-- February 12, 1997 ...[Visit Journal] n this work, we present our recent achievements for the reliability of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for λ = 808 nm. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50 approximately 60 °C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (approximately 3 years). The characteristics during the tests are discussed in detail. [reprint (PDF)]
16.	Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth Vinod E. Sandana; David. J. Rogers; Ferechteh Hosseini Teherani; Philippe Bove; Manijeh Razeghi physica status solidi (a) Applications and Materials Science. Volume 211, Issue 2, pages 449–454, (February 2014)-- January 14, 2014 ...[Visit Journal] The growth of catalyst-free ZnO nanostructure arrays on silicon (111) substrates by pulsed laser deposition was investigated. Without an underlayer, randomly oriented, micron-scale structures were obtained. Introduction of a c-axis oriented ZnO underlayer resulted in denser arrays of vertically oriented nanostructures with either tapering, vertical-walled or broadening forms, depending on background Ar pressure. Nanostructure pitch seemed to be determined by underlayer grain size while nanostructure widths could be narrowed from ∼100–500 to ∼10–50 nm by a 50 °C increase in growth temperature. A dimpled underlayer topography correlated with the moth-eye type arrays while a more granular surface was linked to vertically walled nanocolumns. Between-wafer reproducibility was demonstrated for both moth-eye and vertical nanocolumn arrays. Broadening nanostructures proved difficult to replicate, however. Full 2 inch wafer coverage was obtained by rastering the target with the laser beam. [reprint (PDF)]
16.	Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition M. Razeghi; P‐L. Meunier; P. Maurel M. Razeghi, P‐L. Meunier, P. Maurel; Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition. J. Appl. Phys. 15 March 1986; 59 (6): 2261–2263-- March 15, 1986 ...[Visit Journal] Ga0.47In0.53As‐InP multiquantum wells grown by low‐pressure metalorganic chemical vapor deposition on garnet (GGG=Gd3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x‐ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers. [reprint (PDF)]
16.	Determination of of Band Gap Energy of Al_1-xIn_xN Grown by Metal Organic Chemical Vapor Deposition in the High Al Composition Regime K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim Applied Physics Letters 71 (6)-- August 11, 1997 ...[Visit Journal] Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al_0.92In_0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. [reprint (PDF)]
16.	Evaluation of the Band Offsets of GaAs-GaInP Multilayers by Electroreflectance Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue SPIE Proceedings, Vol. 1676, pp. 130-- January 1, 1992 ...[Visit Journal] We report the first band offset measurement of GaAs/Ga_0.51In_0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities (Delta) Ec equals 159 ± 4 meV and (Delta) Ev equals 388 ± 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured. [reprint (PDF)]

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