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16.  Recent advances in mid infrared (3-5 μm) quantum cascade lasers
Manijeh Razeghi; Neelanjan Bandyopadhyay; Yanbo Bai; Quanyong Lu; Steven Slivken
Optical Materials Express, Vol. 3, Issue 11, pp. 1872-1884 (2013)-- November 2, 2013 ...[Visit Journal]
Quantum cascade laser (QCL) is an important source of electromagnetic radiation in mid infrared region. Recent research in mid-IR QCLs has resulted in record high wallplug efficiency (WPE), high continuous wave (CW) output power, single mode operation and wide tunability. CW output power of 5.1 W with 21% WPE has been achieved at room temperature (RT). A record high WPE of 53% at 40K has been demonstrated. Operation wavelength of QCL in CW at RT has been extended to as short as 3μm. Very high peak power of 190 W has been obtained from a broad area QCL of ridge width 400μm. 2.4W RT, CW power output has been achieved from a distributed feedback (DFB) QCL. Wide tuning based on dual section sample grating DFB QCLs has resulted in individual tuning of 50cm-1 and 24 dB side mode suppression ratio with continuous wave power greater than 100 mW. [reprint (PDF)]
 
15.  High power frequency comb based on mid-infrared quantum cascade laser at λ ~9μm
Q. Y. Lu, M. Razeghi, S. Slivken, N. Bandyopadhyay, Y. Bai, W. J. Zhou, M. Chen, D. Heydari, A. Haddadi, R. McClintock, M. Amanti, and C. Sirtori
Appl. Phys. Lett. 106, 051105 (2015)-- February 2, 2015 ...[Visit Journal]
We investigate a frequency comb source based on a mid-infrared quantum cascade laser at λ ∼9 μm with high power output. A broad flat-top gain with near-zero group velocity dispersion has been engineered using a dual-core active region structure. This favors the locking of the dispersed Fabry-Pérot modes into equally spaced frequency lines via four wave mixing. A current range with a narrow intermode beating linewidth of 3 kHz is identified with a fast detector and spectrum analyzer. This range corresponds to a broad spectral coverage of 65 cm−1 and a high power output of 180 mW for ∼176 comb modes. [reprint (PDF)]
 
11.  Imprinting of Nanoporosity in Lithium-Doped Nickel Oxide through the use of Sacrificial Zinc Oxide Nanotemplates
Vinod E. Sandana, David J. Rogers, Ferechteh H. Teheran1, Philippe Bove, Ryan McClintock and Manijeh Razeghi
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101052C-- April 3, 2017 ...[Visit Journal]
Methods for simultaneously increasing the conductivity and the porosity of NiO layers grown by pulsed laser deposition (PLD) were investigated in order to develop improved photocathodes for p-DSSC applications. NiO:Li (20at%) layers grown on c-Al2O3 by PLD showed a sharp drop in conductivity with increasing substrate temperature. Layers grown at room temperature were more than two orders of magnitude more conductive than undoped NiO layers but did not show evidence of any porosity in Scanning Electron Microscope (SEM) images. A new method for imposing a nanoporosity in NiO was developed based on a sacrificial template of nanostructured ZnO. SEM images and EDX spectroscopy showed that a nanoporous morphology had been imprinted in the NiO overlayer after preferential chemical etching away of the nanostructured ZnO underlayer. Beyond p-DSSC applications, this new process could represent a new paradigm for imprinting porosity in a whole range of materials. [reprint (PDF)]
 
10.  Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors
Ryan McClintock ; Manijeh Razeghi
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550U-- August 28, 2015 ...[Visit Journal]
AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon. [reprint (PDF)]
 
10.  Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
G. Chen, E.K. Huang, A.M. Hoang, S. Bogdanov, S.R. Darvish, and M. Razeghi
Applied Physics Letters, Vol. 101, No. 21, p. 213501-1-- November 19, 2012 ...[Visit Journal]
By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω·cm² differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11 μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias. [reprint (PDF)]
 
10.  InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
A. Haddadi , G. Chen , R. Chevallier , A. M. Hoang , and M. Razeghi
Appl. Phys. Lett. 105, 121104 (2014)-- September 22, 2014 ...[Visit Journal]
High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at −90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm² and a dark current density of 4.4 × 10−4 A/cm² under −90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011 cm·Hz1/2·W-1. [reprint (PDF)]
 
10.  High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition
N. Bandyopadhyay, Y. Bai, S. Slivken, and M. Razeghi
Appl. Phys. Lett. 105, 071106 (2014)-- August 20, 2014 ...[Visit Journal]
A technique based on composite quantum wells for design and growth of strain balanced Al0.63In0.37As/Ga0.35In0.65As/Ga0.47In0.53As quantum cascade lasers (QCLs) by molecular beam epitaxy (MBE), emitting in 5.2–11 μm wavelength range, is reported. The strained Al0.63In0.37As provides good electron confinement at all wavelengths, and strain balancing can be achieved through composite wells of Ga0.35In0.65As/Ga0.47In0.53As for different wavelength. The use of these fixed composition materials can avoid the need for frequent calibration of a MBE reactor to grow active regions with different strain levels for different wavelengths. Experimental results for QCLs emitting at 5.2, 6.7, 8.2, 9.1, and 11 μm exhibit good wall plug efficiencies and power across the whole wavelength range. It is shown that the emission wavelength can be predictably changed using the same design template. These lasers are also compatible with a heterogeneous broadband active region, consisting of multiple QCL cores, which can be produced in a single growth run. [reprint (PDF)]
 
10.  Angled cavity broad area quantum cascade lasers
Y. Bai, S. Slivken, Q.Y. Lu, N. Bandyopadhyay, and M. Razeghi
Applied Physics Letters, Vol. 100, Np. 8, p. 081106-1-- August 20, 2012 ...[Visit Journal]
Angled cavity broad area quantum cascade lasers (QCLs) are investigated with surface gratingbased distributed feedback (DFB) mechanisms. It is found that an angled cavity incorporating a one dimensional DFB with grating lines parallel to the laser facet offers the simplest solution for single mode and diffraction limited emission in the facet normal direction. A room temperature single mode QCL with the highest output power for wavelengths longer than 10 micron is demonstrated. This structure could be applied to a wide range of laser structures for power scaling along with spectral and spatial beam control. [reprint (PDF)]
 
9.  

-- November 30, 1999
 
9.  Highly temperature insensitive quantum cascade lasers
Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi
Applied Physics Letters, Vol. 97, No. 25-- December 20, 2010 ...[Visit Journal]
An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T(0) and T(1), for operations above room temperature. A T(0) value of 383 K and a T(1) value of 645 K are obtained within a temperature range of 298–373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mm and a ridge width of 8 μm. [reprint (PDF)]
 
8.  High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
A. Haddadi, X.V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A.M. Hoang, and M. Razeghi
Applied Physics Letters 107 , 141104 (2015)-- October 5, 2015 ...[Visit Journal]
A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ~1.8μm at 300K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R×A of 285 Ω·cm² and a dark current density of 9.6×10-5 A/cm² under −50mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45×1010 cm·Hz½/W. At 200 K, the photodiode exhibited a dark current density of 1.3×10-8 A/cm² and a quantum efficiency of 36%, resulting in a detectivity of 5.66×1012 cm·Hz½/W. [reprint (PDF)]
 
8.  2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers
Q.Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi
Applied Physics Letters, Vol. 98, No. 18, p. 181106-1-- May 4, 2011 ...[Visit Journal]
We demonstrate high power continuous-wave room-temperature operation surface-grating distributed feedback quantum cascade lasers at 4.8 μm. High power single mode operation benefits from a combination of high-reflection and antireflection coatings. Maximum single-facet continuous-wave output power of 2.4 W and peak wall plug efficiency of 10% from one facet is obtained at 298 K. Single mode operation with a side mode suppression ratio of 30 dB and single-lobed far field without beam steering is observed. [reprint (PDF)]
 
8.  Room temperature quantum cascade lasers with 27% wall plug efficiency
Y. Bai, N. Bandyopadhyay, S. Tsao, S. Slivken and M. Razeghi
Applied Physics Letters, Vol. 98, No. 18, p. 181102-1-- May 3, 2011 ...[Visit Journal]
Using the recently proposed shallow-well design, we demonstrate InP based quantum cascade lasers (QCLs) emitting around 4.9 μm with 27% and 21% wall plug efficiencies in room temperature (298 K) pulsed and continuous wave (CW) operations, respectively. The laser core consists of 40 QCL-stages. The highest cw efficiency is obtained from a buried-ridge device with a ridge width of 8 μm and a cavity length of 5 mm. The front and back facets are antireflection and high-reflection coated, respectively. The maximum single facet cw power at room temperature amounts to 5.1 W. [reprint (PDF)]
 
8.  Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi
Applied Physics Letters 106 , 011104 (2015)-- January 8, 2015 ...[Visit Journal]
A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm² under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 1012 cm·Hz½·W-1 at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm² under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm·Hz½·W-1. [reprint (PDF)]
 
7.  Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems
M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam, and R. McClintock
Journal of ELECTRONIC MATERIALS, Vol. 43, No. 8, 2014-- August 1, 2014 ...[Visit Journal]
Type II superlattices (T2SLs), a system of interacting multiquantum wells,were introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention, especially for infrared detection and imaging. In recent years, the T2SL material system has experienced incredible improvements in material growth quality, device structure design, and device fabrication techniques that have elevated the performance of T2SL-based photodetectors and focal-plane arrays (FPAs) to a level comparable to state-of-the-art material systems for infrared detection and imaging, such as mercury cadmium telluride compounds. We present the current status of T2SL-based photodetectors and FPAs for imaging in different infrared regimes, from short wavelength to very long wavelength, and dual-band infrared detection and imaging, as well as the future outlook for this material system. [reprint (PDF)]
 
7.  Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors
E.K. Huang, A. Haddadi, G. Chen, A.M. Hoang, and M. Razeghi
Optics Letters, Vol. 38, no. 1, p. 22-24-- January 1, 2013 ...[Visit Journal]
A versatile dual-band detector capable of active and passive use is demonstrated using short-wave (SW) and midwave(MW) IR type-II superlattice photodiodes. A bilayer etch-stop scheme is introduced for back-side-illuminated detectors, which enhanced the external quantum efficiency both in the SWIR and MWIR spectral regions. Temperature-dependent dark current measurements of pixel-sized 27 μm detectors found the dark current density to be ~1 × 10-5 A/cm² for the ∼4.2 μm cutoff MWIR channel at 140 K. This corresponded to a reasonable imager noise equivalent difference in temperature of ∼49 mK using F∕2.3 optics and a 10 ms integration time (tint), which lowered to ∼13 mK at 110 K using tint  30 ms, illustrating the potential for high-temperature operation. The SWIR channel was found to be limited by readout noise below 150 K. Excellent imagery from the dual-band imager exemplifying pixel coincidence is shown. [reprint (PDF)]
 
6.  Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO
K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, Y. El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P.L. Voss, M. Razeghi, A. Ougazzaden
Journal of Crystal Growth -- November 7, 2015 ...[Visit Journal]
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscopy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process. [reprint (PDF)]
 
6.  Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, R. McClintock
Infrared Physics & Technology, Volume 59, Pages 41-52 (2013)-- July 1, 2013 ...[Visit Journal]
Type-II InAs/GaSb superlattices (T2SLs), a system of multi-interacting quantum wells, was introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention especially for infrared detection. In recent years, T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photo-detectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of T2SL-based photo-detectors and focal plane arrays for imaging in different infrared regions, from SWIR to VLWIR, and the future outlook of this material system. [reprint (PDF)]
 
6.  Monolithic terahertz source
Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi
Nature Photonics | Research Highlights -- July 31, 2014 ...[Visit Journal]
To date, the production of continuous-wave terahertz (THz) sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers operating at room temperature has proved elusive. A critical problem is that, to achieve a large nonlinear susceptibility for frequency conversion, the active region of the quantum cascade laser requires high doping, which elevates the lasing threshold current density. Now, Quan-Yong Lu and colleagues from Northwestern University in the USA have overcome this problem and demonstrated a room-temperature continuous-wave THz source based on difference-frequency generation in quantum cascade lasers. They designed quantum-well structures based on In0.53Ga0.47As/In0.52Al0.48As material system for two mid-infrared wavelengths. The average doping in the active region was about 2.5 × 1016 cm−3. A buried ridge, buried composite distributed-feedback waveguide with the Čerenkov phase-matching scheme was used to reduce the waveguide loss and enhance heat dissipation. As a result, single-mode emission at 3.6 THz was observed at 293 K. The continuous-wave THz power reached 3 μW with a conversion efficiency of 0.44 mW W−2 from mid-infrared to THz waves. Using a similar device design, a THz peak power of 1.4 mW was achieved in pulse mode. [reprint (PDF)]
 
6.  Optimizing facet coating of quantum cascade lasers for low power consumption
Y. Bai, S.R. Darvish, N. Bandyopadhyay, S. Slivken and M. Razeghi
Journal of Applied Physics, Vol. 109, No. 5, p. 053103-1-- March 1, 2011 ...[Visit Journal]
Typical high power consumption (∼10 W) of mid-infrared quantum cascade lasers (QCLs) has been a serious limitation for applications in battery powered systems. A partial high-reflection (PHR) coating technique is introduced for power downscaling with shorter cavity lengths. The PHR coating consists of a double layer dielectric of SiO2 and Ge. With this technique, a 4.6 μm QCL with an ultra low threshold power consumption of less than a watt (0.83 W) is demonstrated in room temperature continuous wave operation. At 25°C, the maximum output power and wall plug efficiency are 192 mW and 8.6%, respectively. [reprint (PDF)]
 
6.  Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output
Q.Y. Lu, Y. Bai, N. Bandyopadhyay, Sl Slivken, and M. Razeghi
Applied Physics Letters, Vol. 97, No. 23, p. 231119-1-- December 6, 2010 ...[Visit Journal]
We demonstrate surface-grating distributed feedback quantum cascade lasers (QCLs) with a watt-level power output at 4.75 μm. A device with a 5 mm cavity length exhibits an output power of 1.1 W in room-temperature cw operation. Single-mode operation with a side mode suppression ratio of 30 dB is obtained in the working temperature of 15–105 °C. A double-lobed far field with negligible beam steering is observed. The significance of this demonstration lies in its simplicity and readiness to be applied to standard QCL wafers with the promise of high-power performances. [reprint (PDF)]
 
6.  Widely tunable room temperature semiconductor terahertz source
Q. Y. Lu, S. Slivken, N. Bandyopadhyay, Y. Bai, and M. Razeghi
Appl. Phys. Lett. 105, 201102 (2014)-- November 17, 2014 ...[Visit Journal]
We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6–4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing. [reprint (PDF)]
 
6.  Quntum Cascade Laser Breakthrough for Advanced Remote Detection
Manijeh Razeghi, Wenjia Zhou, Donghai Wu, Ryan McClintock, and Steven Slivken, Northwestern University
www.photonics.com-- November 1, 2016
The atoms in a molecule can bend, stretch and rotate with respect to one an­other, and these excitations are largely optically active. Most molecules, from simple to moderately complex, have a characteristic absorption spectrum in the 3- to 14-µrn wavelength range that can be uniquely identified and quantified in real time. Infrared spectroscopy has been used to study these absorption features and de­velop different molecular "fingerprints."
 
5.  Suppresion of surface leakage in gate controlled Type-II InAs/GaSb mid-Infrared photodetectors
G. Chen, B.M. Nguyen, A.M. Hoang, E.K. Huang, S.R. Darvish and M. Razeghi
SPIE Proceedings, Vol. 8268, p. 826811-- January 22, 2012 ...[Visit Journal]
One of the biggest challenges of improving the electrical performance in Type II InAs/GaSb superlattice photodetector is suppressing the surface leakage. Surface leakage screens important bulk dark current mechanisms, and brings difficulty and uncertainty to the material optimization and bulk intrinsic parameters extraction such as carrier lifetime and mobility. Most of surface treatments were attempted beyond the mid-infrared (MWIR) regime because compared to the bulk performance, surface leakage in MWIR was generally considered to be a minor factor. In this work, we show that below 150 K, surface leakage still strongly affects the electrical performance of the very high bulk performance p-π-M-n MWIR photon detectors. With gating technique, we can effectively eliminate the surface leakage in a controllable manner. At 110K, the dark current density of a 4.7 μm cut-off gated photon diode is more than 2 orders of magnitude lower than the current density in SiO2 passivated ungated diode. With a quantum efficiency of 48%, the specific detecivity of gated diodes attains 2.5 x 1014 cm·Hz1/2/W, which is 3.6 times higher than that of ungated diodes. [reprint (PDF)]
 
5.  Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array
G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi
Appl. Phys. Lett. 103, 223501 (2013)-- November 25, 2013 ...[Visit Journal]
Y2O3 was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO2 passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at −300 mV of 2.5 × 10−5 A/cm² and 1.3 × 104 Ω·cm², respectively, and a specific detectivity of 1.4 × 1012 Jones. [reprint (PDF)]
 

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