Center for Quantum Devices - Most Downloaded Journal Articles

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15.	Monolithic terahertz source Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi Nature Photonics \| Research Highlights -- July 31, 2014 ...[Visit Journal] To date, the production of continuous-wave terahertz (THz) sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers operating at room temperature has proved elusive. A critical problem is that, to achieve a large nonlinear susceptibility for frequency conversion, the active region of the quantum cascade laser requires high doping, which elevates the lasing threshold current density. Now, Quan-Yong Lu and colleagues from Northwestern University in the USA have overcome this problem and demonstrated a room-temperature continuous-wave THz source based on difference-frequency generation in quantum cascade lasers. They designed quantum-well structures based on In_0.53Ga_0.47As/In_0.52Al_0.48As material system for two mid-infrared wavelengths. The average doping in the active region was about 2.5 × 10¹⁶ cm⁻³. A buried ridge, buried composite distributed-feedback waveguide with the Čerenkov phase-matching scheme was used to reduce the waveguide loss and enhance heat dissipation. As a result, single-mode emission at 3.6 THz was observed at 293 K. The continuous-wave THz power reached 3 μW with a conversion efficiency of 0.44 mW W⁻² from mid-infrared to THz waves. Using a similar device design, a THz peak power of 1.4 mW was achieved in pulse mode. [reprint (PDF)]
15.	Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design Wenjia Zhou, Neelanjan Bandyopadhyay, Donghai Wu, Ryan McClintock & Manijeh Razeghi Nature Scientific Reports 6, Article number: 25213 -- June 8, 2016 ...[Visit Journal] Quantum cascade lasers (QCLs) have become important laser sources for accessing the mid-infrared (mid-IR) spectral range, achieving watt-level continuous wave operation in a compact package at room temperature. However, up to now, wavelength tuning, which is desirable for most applications, has relied on external cavity feedback or exhibited a limited monolithic tuning range. Here we demonstrate a widely tunable QCL source over the 6.2 to 9.1 μm wavelength range with a single emitting aperture by integrating an eight-laser sampled grating distributed feedback laser array with an on-chip beam combiner. The laser gain medium is based on a five-core heterogeneous QCL wafer. A compact tunable laser system was built to drive the individual lasers within the array and produce any desired wavelength within the available spectral range. A rapid, broadband spectral measurement (520 cm⁻¹) of methane using the tunable laser source shows excellent agreement to a measurement made using a standard low-speed infrared spectrometer. This monolithic, widely tunable laser technology is compact, with no moving parts, and will open new opportunities for MIR spectroscopy and chemical sensing. [reprint (PDF)]
15.	Advanced InAs/GaSb Superlattice Photovoltaic Detectors for Very-Long Wavelength Infrared Applications Y. Wei, A. Gin, M. Razeghi, and G.J. Brown Applied Physics Letters 80 (18)-- May 6, 2002 ...[Visit Journal] We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A·W^-1 at 80 K. A peak detectivity of 4.5×10¹⁰ cm· Hz^½·W^-1 was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm [reprint (PDF)]
15.	Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning Steven Slivken and Manijeh Razeghi Photonics 3, 41-- June 27, 2016 ...[Visit Journal] In an effort to overcome current limitations to electrical tuning of quantum cascade lasers, a strategy is proposed which combines heterogeneous quantum cascade laser gain engineering with sampled grating architectures. This approach seeks to not only widen the accessible spectral range for an individual emitter, but also compensate for functional non-uniformity of reflectivity and gain lineshapes. A trial laser with a dual wavelength core is presented which exhibits electroluminescence over a 750 cm⁻¹ range and discrete single mode laser emission over a 700 cm⁻¹ range. Electrical tuning over 180 cm⁻¹ is demonstrated with a simple sampled grating design. A path forward to even wider tuning is also described using more sophisticated gain and grating design principles. [reprint (PDF)]
15.	Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, Manijeh Razeghi, and Vaidya Nathan Applied Physics Letters 90, 233513-- June 4, 2007 ...[Visit Journal] Effective surface passivation of Type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 µm², with a cutoff wavelength of ~11 µm, exhibited near bulk-limited R₀A values of ~12 Ω·cm², surface resistivities in excess of 10⁴ Ω·cm, and very uniform current-voltage behavior at 77 K. [reprint (PDF)]
15.	Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park Infrared Physics and Technology 42 (3-5)-- January 1, 2001 ...[Visit Journal] Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to GaAs or InP substrate, p-Type GaAs/GaInP QWIPs show background limited performance up to temperatures of 120 K, while p-type GaInAsP/GaInAsP QWIPs exhibit broadband response from lambda = 2.5-10 mum. n-Type GaAs/GaInP QWIPs are sensitive deep into the VLWIR with very low dark current. Extremely large responsivities of 33.2 AW(-1) were obtained from n-type GaInAs/InP QWIPs operating at lambda = 9 mum. Devices made from n-type AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 mum out to 20 mum while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 and 8.5 mum Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry. [reprint (PDF)]
15.	Room temperature quantum cascade laser with ∼ 31% wall-plug efficiency F. Wang, S. Slivken, D. H. Wu, and M. Razeghi AIP Advances 10, 075012-- July 14, 2020 ...[Visit Journal] In this article, we report the demonstration of a quantum cascade laser emitting at λ ≈ 4.9 μm with a wall-plug efficiency of ∼31% and an output power of ∼23 W in pulsed operation at room temperature with 50 cascade stages (Ns). With proper fabrication and packaging, this buried ridge quantum cascade laser with a cavity length of 5 mm delivers more than ∼15 W output power, and its wall-plug efficiency exceeds ∼20% at 100 °C. The experimental results of the lasers are well in agreement with the numerical predictions. [reprint (PDF)]
15.	High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector S. Tsao, H. Lim, W. Zhang, and M. Razeghi Virtual Journal of Nanoscale Science and Technology-- May 28, 2007 ...[Visit Journal][reprint (PDF)]
15.	Quantum Dot Intersubband Photodetectors C. Jelen, M. Erdtmann, S. Kim, and M. Razeghi SPIE Conference, San Jose, CA, -- January 22, 2001 ...[Visit Journal] Quantum dots are recognized as very promising candidates for the fabrication of intersubband photodetectors in the infrared spectral range. At present, material quality is making rapid progress and some devices have been demonstrated. Examples of mid-infrared quantum dot intersubband photodetectors are presented along with device design and data analysis. Nonetheless, the performance of these devices remains less than comparable quantum well intersubband photodetectors due to difficulties in controlling the quantum dot size and distribution during epitaxy. [reprint (PDF)]
15.	Multi-color 4–20 μm In-P-based Quantum Well Infrared Photodetectors C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi SPIE Conference, San Jose, CA, -- January 27, 1999 ...[Visit Journal] In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 &mum, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate the first long-wavelength quantum well infrared photodetectors using the lattice-matched n-doped InGaAlAs/InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively. A 45 degree facet coupled illumination responsivity of R equals 0.37 A/W and detectivity of D*(λ) equals 1x10⁹ cm·Hz^½·W^-1 at T = 77 K, for a cutoff wavelength λ_c equals 13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In_0.52Ga_0.21Al_0.27As/InP heterojunctions. We also report quantum well infrared photodetector structures of In_0.53Ga_0.47As/Al_0.48In_0.52As grown on InP substrate with photoresponse at 4 μm suitable for mid-wavelength infrared detectors. These detectors exhibit a constant peak responsivity of 30 mA/W independent of temperature in the range from T equals 77 K to T equals 200 K. Combining these two materials, we report the first multispectral detectors that combine lattice-matched quantum wells of InGaAs/InAlAs and InGaAs/InP. Utilizing two contacts, a voltage tunable detector with (lambda) p equals 8 micrometer at a bias of V equals 5 V and λ_p equals 4 μm at V equals 10 V is demonstrated. [reprint (PDF)]
15.	Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi, Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature, Surface Science, Volume 142, Issues 1–3, 1984, Pages 179-181,-- July 1, 1984 ...[Visit Journal] We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1−xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ϱxx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels. [reprint (PDF)]
15.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Virtual Journal of Nanoscale Science & Technology 26-- May 26, 2003 ...[Visit Journal][reprint (PDF)]
15.	Optimized structure for InGaAsP/GaAs 808nm high power lasers H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev and M. Razeghi Applied Physics Letters 66 (24)-- June 12, 1995 ...[Visit Journal] The optimized structure for the InGaAsP/GaAs quaternary material lasers (λ=0.808 μm) is investigated for the most efficient high‐power operation through an experiment and theoretical study. A comparative study is performed of threshold current density J_th and differential efficiency η_d dependence on cavity length (L) for two different laser structures with different active layer thickness (150 and 300 Å) as well as for laser structures with different multiple quantum well structures. A theoretical model with a more accurate formulation for minority leakage phenomenon provides explanation for the experimental results and sets general optimization rules for other lasers with similar restrictions on the band gap and refractive index difference between the active layer and the cladding layers. [reprint (PDF)]
15.	Reliability in room-temperature negative differential resistance characteristics of low-aluminum contact AlGaN/GaN double-barrier resonant tunneling diodes C. Bayram, Z. Vashaei, and M. Razeghi Applied Physics Letters, Vol. 97, No. 18, p. 181109-1-- November 1, 2010 ...[Visit Journal] AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs were fabricated into 35-μm-diameter devices for electrical characterization. Lower aluminum content in the DB active layer and minimization of dislocations and polarization fields increased the reliability and reproducibility of room-temperature negative differential resistance (NDR). Polar RTDs showed decaying NDR behavior, whereas nonpolar ones did not significantly. Averaging over 50 measurements, nonpolar RTDs demonstrated a NDR of 67 Ω, a current-peak-to-valley ratio of 1.08, and an average oscillator output power of 0.52 mW. [reprint (PDF)]
15.	Overview of Quantum Cascade Laser Research at the Center for Quantum Devices S. Slivken, A. Evans, J. Nguyen, Y. Bai, P. Sung, S.R. Darvish, W. Zhang and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000B-1-8.-- February 1, 2008 ...[Visit Journal] Over the past several years, our group has endeavored to develop high power quantum cascade lasers for a variety of remote and high sensitivity infrared applications. The systematic optimization of laser performance has allowed for demonstration of high power, continuous-wave quantum cascade lasers operating above room temperature. In the past year alone, the efficiency and power of our short wavelength lasers (~4.8 µm) has doubled. In continuous wave at room temperature, we have now separately demonstrated ~10% wallplug efficiency and ~700 mW of output power. Up to now, we have been able to show that room temperature continuous wave operation with > 100 mW output power in the 3.8 < λ < 11.5 µm wavelength range is possible. [reprint (PDF)]
15.	Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands Y. Guldner, J. P. Vieren, and M. Voos F. Delahaye and D. Dominguez J. P. Hirtz and M. Razeghi Phys. Rev. B 33, 3990 1986-- March 15, 1986 ...[Visit Journal] Quantum-Hall-effect and Shubnikov–de Haas measurements are presented for InxGa1−xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (𝑛𝑠≤5×1011 cm−2). The Shubnikov–de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2𝑒2 with an uncertainty of ∼10−8. [reprint (PDF)]
15.	Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing Gre´gory Barbillon, Vinod E. Sandana,Christophe Humbert, Benoit Be´lier, David J. Rogers, Ferechteh H. Teherani, Philippe Bove Ryan McClintock and Manijeh Razeghid J. Mater. Chem. C, 2017, 5, 3528-- March 20, 2017 ...[Visit Journal] At present, the simultaneous attainment of good reproducibility and high enhancement factors (EF) are key challenges in the development of surface enhanced Raman scattering (SERS)substrates for improved chemical and biological sensing. SERS substrates are generally based on distributions of metallic nanoparticles/structures with different shapes and architectures which are prepared by either thermal dewetting, precipitation from colloidal suspensions1–4 or advanced (e.g. deep UV or electron beam (EBL)) lithographic techniques.5–9 Although such substrates can exhibit large Raman enhancements, the former two techniques (colloidal and thermal dewetting) give poor SERS reproducibility while deep UV and EBL are too expensive and/or complex for mass production. [reprint (PDF)]
15.	Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi Phys. Status Solidi A, pp. 1–6-- September 30, 2016 ...[Visit Journal] AlN layers have been grown on 200 nm period of nanopatterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. The material quality of 5–10 µm thick AlN grown by LEO is comparable to that of much thinner layers (2 µm) grown by cantilever epitaxy on the nanopatterned substrates. Indeed, the latter exhibited root mean square (RMS) roughness of 0.65 nm and X-ray diffraction full width at half-maximum (FWHM) of 710 arcsec along the (0002) reflection and 930 arcsec along the (10̅15) reflection. The corresponding room temperature photoluminescence spectra was dominated by a sharp band edge peak. Back emission ultra violet light emitting diodes (UV LEDs) were fabricated by flip chip bonding to patterned AlN heat sinks followed by complete Si (111) substrate removal demonstrating a peak pulsed power of ∼0.7 mW at 344 nm peak emission wavelength. The demonstrated UV LEDs were fabricated on a cost effective epitaxial structure grown on the nanopatterned Si substrate with a total thickness of 3.3 µm [reprint (PDF)]
15.	Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi Applied Physics Letters, Vol. 99, Issue 13, p. 131106-1-- September 26, 2011 ...[Visit Journal] We demonstrate room temperature single-mode THz emission at 4 THz based on intracavity difference-frequency generation from mid-infrared dual-wavelength quantum cascade lasers. An integrated dual-period distributed feedback grating is defined on the cap layer to purify both mid-infrared pumping wavelengths and in turn the THz spectra. Single mode operation of the pumping wavelengths results in a single-mode THz operation with a narrow linewidth of 6.6 GHz. A maximum THz power of 8.5 μW with a power conversion efficiency of 10 μW/W² is obtained at room temperature. [reprint (PDF)]
15.	EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2 M. Razeghi, B. Houlier and M. Yuste M. Razeghi et al. EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2, Solid State Communications, Vol. 26, pp. 665-668. -- January 26, 1978 ...[Visit Journal] The spin Hamiltonian parameters of Mn 2÷ have been measured above and below the transition point (180"C) of the lead phosphate. They show that Mn 2+ substitutes a Pbl ion. Between 175 and 180vC the principal axis OX of the fine tensor is parallel to the wave vector of the soft mode which condensates at the transition point. An exaltation of the linewidth is observed. The linewidth remains constant within 50C of Te; in this temperature range, the "static regime" is achieved, and the correlation time of the fluctuations is less than 10 -s sec. [reprint (PDF)]
15.	ZnO nanorod electrodes for hydrogen evolution and storage Harinipriya, S.; Usmani, B.; Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Lusson, A.; Bove, P.; Drouhin, H.-J.; Razeghi, M. Proc. SPIE 8263, Oxide-based Materials and Devices III, 82631Y (February 9, 2012)-- February 9, 2012 ...[Visit Journal] Due to the attractive combination of a relatively high specific heat of combustion with a large specific energy capacity, molecular hydrogen (H2) is being investigated for use as an alternative to fossil fuels. Energy-efficient H₂ production and safe storage remain key technical obstacles to implementation of an H₂ based economy, however. ZnO has been investigated for use as an alternative photocatalytic electrode to TiO₂ for solarpowered photo-electro-chemical (PEC) electrolysis, in which H₂ is generated by direct water splitting in a cell with a metal cathode and a semiconducting anode. In this investigation, ZnO NR grown on Si (100) substrates by pulsed laser deposition were investigated for use as electrodes in the Hydrogen Evolution Reaction (HER). The electrochemical potential and Fermi energy of the ZnO NR were estimated from the electrochemical current density in acid and alkaline solutions via phenomenological thermodynamic analysis. As well as acting as an effective electrocalytic cathode, the ZnO NR appear to operate as a hydrogen reservoir. These results indicate that the ZnO NR have excellent potential for the storage of evolved H₂. [reprint (PDF)]
15.	Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994 ...[Visit Journal] We report an analysis of the heteroepitaxial interfaces in high quality GaInP–GaAs superlattices grown simultaneously on GaAs and Si substrates by gas source molecular beam epitaxy. These two superlattices have been studied using high resolution x-ray diffraction measurements. Sharp superlattice satellites, with very little broadening, are observed within a 6° range for the sample on GaAs. Photoluminescence peaks with full widths at half-maximums of 5 and 7 meV are obtained at 4 K for samples with 58 Å wells on GaAs and Si, respectively. Room temperature exciton absorption is observed in the photovoltage measurements for a superlattice grown on Si substrate. The thicknesses determined by x-ray analysis are consistent with those obtained by a Kronig–Penny model fitting of the photovoltage spectroscopy. [reprint (PDF)]
15.	Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates J.J. Lee, J.D. Kim, and M. Razeghi Applied Physics Letters 73 (5)-- August 3, 1998 ...[Visit Journal] We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×10⁶ cm·Hz^½/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. [reprint (PDF)]
15.	Advances in APDs for UV astronomy Melville P. Ulmer; Ryan M. McClintock; Jose L. Pau; Manijeh Razeghi Proc. SPIE 6686, UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XV, 668605 (September 13, 2007)-- November 13, 2007 ...[Visit Journal] We report the most recent work of our group of the development of avalanche photo diodes based on (Al)GaN. The goal of this group is to achieve single photon counting. In this paper we first give the scientific motivation for making such a device in the context of UV astronomy and then describe current work and plans for future development. The development includes improving the sensitivity to be able to carry out single photon detection and the fabrication of arrays. [reprint (PDF)]
15.	III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz M. Razeghi IEEE Photonics Journal-Breakthroughs in Photonics 2010, Vol. 3, No. 2, p. 263-267-- April 26, 2011 ...[Visit Journal] We review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state-of-the-art in three key spectral regimes: (1) Ultraviolet (AlGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light emitting diodes), (2) Visible (InGaN-based solid state lighting, lasers, and solar cells), and (3) Near-, mid-infrared, and terahertz (AlGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in III-Nitride optoelectronic devices. [reprint (PDF)]

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