Center for Quantum Devices - Most Downloaded Journal Articles

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15.	High performance mid-wavelength quantum dot infrared photodetectors for focal plane arrays M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang and A.A. Quivy SPIE Conference, San Diego, CA, Vol. 6297, pp. 62970C-- August 13, 2006 ...[Visit Journal] Quantum dot infrared photodetectors (QDIPs) have recently emerged as promising candidates for detection in the middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges. Here, we report our recent results for mid-wavelength QDIPs grown by low-pressure metalorganic chemical vapor deposition. Three monolayer of In_0.68Ga_0.32As self-assembled via the Stranski-Krastanov growth mode and formed lens-shaped InGaAs quantum dots with a density around 3×10₁₀ cm^-2. The peak responsivity at 77 K was measured to be 3.4 A/W at a bias of -1.9 V with 4.7 µm peak detection wavelength. Focal plane arrays (FPAs) based on these devices have been developed. The preliminary result of FPA imaging is presented. [reprint (PDF)]
15.	Molecular Beam Epitaxial Growth of High Quality InSb E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi Applied Physics Letters 65 (26)-- December 26, 1994 ...[Visit Journal] In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 µm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92,300 cm²·V⁻¹ at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. [reprint (PDF)]
15.	First Demonstration of ~ 10 microns FPAs in InAs/GaSb SLS M. Razeghi, P.Y. Delaunay, B.M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V. Nathan and M. Tidrow IEEE LEOS Newsletter 20 (5)-- October 1, 2006 ...[Visit Journal] The concept of Type-II InAs/GaSb superlattice was first brought by Nobel Laureate L. Esaki, et al. in the 1970s. There had been few studies on this material system until two decades later when reasonable quality material growth was made possible using molecular beam epitaxy. With the addition of cracker cells for the group V sources and optimizations of material growth conditions, the superlattice quality become significantly improved and the detectors made of these superlattice materials can meet the demand in some practical field applications. Especially in the LWIR regime, it provides a very promising alternative to HgCdTe for better material stability and uniformity, etc. We have developed the empirical tight binding model (ETBM) for precise determination of the superlattice bandgap. [reprint (PDF)]
15.	Recent progress of widely tunable, CW THz sources based QCLs at room temperature Manijeh Razeghi Terahertz Science and Technology, Vol.10, No.4, pp. 87-151-- December 7, 2017 ...[Visit Journal] The THz spectral region is of significant interest to the scientific community, but is one of the hardest regions to access with conventional technology. A wide range of compelling new applications are initiating a new revolution in THz technology, especially with regard to the development of compact and versatile devices for THz emission and detection. In this article, recent advances with regard to III-V semiconductor optoelectronics are explored with emphasis on how these advances will lead to the next generation of THz component technology [reprint (PDF)]
15.	Growth and Optimization of GaInAsP/InP Material System for Quantum Well Infrared Photodetector Applications M. Erdtmann, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, and G. Brown SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Multi-quantum well structures of Ga_xIn_1-xAs_yP_1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga_0.47In_0.53As/InP, Ga_0.38In_0.62As_0.80P_0.20 (1.55 μm)/InP, and Ga_0.27In_0.73As_0.57P_0.43 (1.3 μm))/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 micrometers , and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition. [reprint (PDF)]
15.	High Quantum Efficiency Solar-Blind Photodetectors R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi SPIE Conference, Jose, CA, Vol. 5359, pp. 434-- January 25, 2004 ...[Visit Journal] We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness [reprint (PDF)]
15.	Etching of ZnO Towards the Development of ZnO Homostructure LEDs K. Minder, F.H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi SPIE Conference, January 25-29, 2007, San Jose, CA Proceedings – Zinc Oxide Materials and Devices II, Vol. 6474, p. 64740Q-1-6-- January 29, 2007 ...[Visit Journal] Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. [reprint (PDF)]
15.	Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth Vinod E. Sandana; David. J. Rogers; Ferechteh Hosseini Teherani; Philippe Bove; Manijeh Razeghi physica status solidi (a) Applications and Materials Science. Volume 211, Issue 2, pages 449–454, (February 2014)-- January 14, 2014 ...[Visit Journal] The growth of catalyst-free ZnO nanostructure arrays on silicon (111) substrates by pulsed laser deposition was investigated. Without an underlayer, randomly oriented, micron-scale structures were obtained. Introduction of a c-axis oriented ZnO underlayer resulted in denser arrays of vertically oriented nanostructures with either tapering, vertical-walled or broadening forms, depending on background Ar pressure. Nanostructure pitch seemed to be determined by underlayer grain size while nanostructure widths could be narrowed from ∼100–500 to ∼10–50 nm by a 50 °C increase in growth temperature. A dimpled underlayer topography correlated with the moth-eye type arrays while a more granular surface was linked to vertically walled nanocolumns. Between-wafer reproducibility was demonstrated for both moth-eye and vertical nanocolumn arrays. Broadening nanostructures proved difficult to replicate, however. Full 2 inch wafer coverage was obtained by rastering the target with the laser beam. [reprint (PDF)]
14.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Virtual Journal of Nanoscale Science & Technology 26-- May 26, 2003 ...[Visit Journal][reprint (PDF)]
14.	Type-II Superlattices and Quantum Cascade Lasers for MWIR and LWIR Free-Space Communications A. Hood, A. Evans and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 690005-1-9.-- February 1, 2008 ...[Visit Journal] Free-space optical communications has recently been touted as a solution to the "last mile" bottleneck of high-speed data networks providing highly secure, short to long range, and high-bandwidth connections. However, commercial near infrared systems experience atmospheric scattering losses and scintillation effects which can adversely affect a link's operating budget. By moving the operating wavelength into the mid- or long-wavelength infrared enhanced link uptimes and increased operating range can be achieved due to less susceptibility to atmospheric affects. The combination of room-temperature, continuous-wave, high-power quantum cascade lasers and high operating temperature type-II superlattice photodetectors offers the benefits of mid- and long-wavelength infrared systems as well as practical operating conditions for next generation free-space communications systems. [reprint (PDF)]
14.	New frontiers in InP based quantum devices Manijeh Razeghi Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on, pp.1,4, (2008)-- May 29, 2008 ...[Visit Journal] Recent research activities taking place at center for quantum devices (CQD) based on InP material system, especially the exploration and demonstration of the state-of-art high performance quantum cascade lasers (QCL), greatly facilitate the understanding of the underlining physical principles governing the device operation. Thanks to the endless effort putting into the semiconductor epitaxy technologies, including the Molecular Beam Epitaxy (MBE) and low pressure metal organic chemical vapor deposition (LP-MOCVD), the world has seen a close approaching to the ultimate band gap engineering. Highly sophisticated man-made heterostructure, which incorporates hundreds of alternating layers of GaInAs/AlInAs with each layer thickness and composition specifically designed, can be created within a single growth. The material quality is evidenced by the atomically abrupt interfaces. The versatility of the band gap engineering is greatly enhanced by the strain-balanced technique, which allows for growing structures with continuously tunable conduction band offset with little defects. As a result, the room temperature continuous wave (CW) wall plug efficiency (WPE) and the maximum achievable output optical power from a single device have been constantly improving. Novel waveguide incorporating the photonic crystal distributed feedback (PCDFB) mechanism is also investigated with satisfactory preliminary results. [reprint (PDF)]
14.	Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Femtosecond nonlinear optical techniques have been employed in the study of carrier dynamics and transport in UV detector materials. Visible femtosecond pulses derived from the signal beam of a 250 kHz regenerative amplifier-pumped optical parametric amplifier were frequency doubled to obtain pulses tunable from 250 nm to 375 nm. Time-resolved reflectivity experiments indicate that the room-temperature carrier lifetime in GaN grown by double lateral epitaxial overgrowth is about 3 times longer than that of GaN grown on sapphire without benefit of this technique. The electron velocity-field characteristics and saturation velocity in GaN have been obtained form time-resolved studies of electroabsorption in a GaN p-i-n diode. The peak steady- state velocity of 1.9x10⁷ cm/s in this device occurs at 225 kV/cm. Time-resolved transmission measurements have been used to monitor ultrafast carrier relaxation phenomena in a thin AlGaN layer with bandgap in the solar blind region of the spectrum. Excitation intensity and wavelength dependent studies of the photoinduced bleaching decays suggest that they are primarily governed by trapping in a high density of sub-bandgap defect levels. [reprint (PDF)]
14.	Current status and potential of high power mid-infrared intersubband lasers S. Slivken, Y. Bai, B. Gokden, S.R. Darvish and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76080B-1-- January 22, 2010 ...[Visit Journal] Some of the recent advances in high power quantum cascade laser development will be reviewed in this paper. Research areas explored include short wavelength (λ <4 µm) lasers, high performance strain-balanced heterostructures, and high power long wavelength (7< λ< 16 µm) lasers. Near λ=4.5 µm, highlights include demonstration of 18% continuous wave wallplug efficiency at room temperature, 53% pulsed wallplug efficiency at 40 K, and 120 W of peak power output from a single device at room temperature. Near λ ~10 µm, up to 0.6 W of continuous output power at room temperature has also been demonstrated, with pulsed efficiencies up to 9%. [reprint (PDF)]
14.	Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells U. Cebulla, G. Bacher, A. Forchel, D. Schmitz, H. Jürgensen, M. Razeghi Appl. Phys. Lett. 55, 933–935 (1989)-- September 4, 1989* ...[Visit Journal] We have performed picosecond time-resolved measurements on Ir:.O. 53 GaO. 47 As/lnP quantum wells with varying barrier thicknesses using 10 ps Nd:Y AG excitation. For this excitation, holes and electrons are created in the Ino . 53 GaOA7 As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the harrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation. [reprint (PDF)]
14.	Minority electron unipolar photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi Applied Physics Letters, Vol. 95, No. 18, p. 183502-- November 2, 2009 ...[Visit Journal] We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14 µm cutoff detector exhibits a dark current 3.3 mA·cm⁻², a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×10¹⁰ Jones. [reprint (PDF)]
14.	Quantum Dot Infrared Photodetectors: Comparison Experiment and Theory H. Lim, W. Zhang, S. Tsao, T. Sills, J. Szafraniec, K. Mi, B. Movaghar, and M. Razeghi Physical Review B, 72-- August 17, 2005 ...[Visit Journal] We present data and calculations and examine the factors that determine the detectivities in self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We investigate a class of devices that combine good wavelength selectivity with “high detectivity.” We study the factors that limit the temperature performance of quantum dot detectors. For this we develop a formalism to evaluate the optical absorption and the electron transport properties. We examine the performance limiting factors and compare theory with experimental data. We find that the notion of a phonon bottleneck does not apply to large-diameter lenslike quantum dots, which have many closely spaced energy levels. The observed strong decrease of responsivity with temperature is ultimately due to a rapid thermal cascade back into the ground states. High temperature performance is improved by engineering the excited state to be near the continuum. The good low temperature (77 K) performance in strongly bound QDIPs is shown to be due to the high gain and the low noise achievable in these micron size devices. [reprint (PDF)]
14.	Sandwich method to grow high quality AlN by MOCVD Demir , H Li, Y Robin, R McClintock, S Elagoz and M Razeghi Journal of Physics D: Applied Physics 51, pp. 085104-- February 7, 2018 ...[Visit Journal] We report pulsed atomic layer epitaxy growth of a very high crystalline quality, thick (~2 µm) and crack-free AlN material on c-plane sapphire substrates via a sandwich method using metal organic chemical vapor deposition. This sandwich method involves the introduction of a relatively low temperature (1050 °C) 1500 nm thick AlN layer between two 250 nm thick AlN layers which are grown at higher temperature (1170 °C). The surface morphology and crystalline quality remarkably improve using this sandwich method. A 2 µm thick AlN layer was realized with 33 arcsec and 136 arcsec full width at half maximum values for symmetric and asymmetric reflections of ω-scan, respectively, and it has an atomic force microscopy root-mean-square surface roughness of ~0.71 nm for a 5 × 5 µm² surface area. [reprint (PDF)]
14.	Pulsed metal-organic chemical vapor deposition of high quality AlN/GaN superlattices for near-infrared intersubband transitions C. Bayram, N. Pere-Laperne, R. McClintock, B. Fain and M. Razeghi Applied Physics Letters, Vol. 94, No. 12, p. 121902-1-- March 23, 2009 ...[Visit Journal] A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Effects of barrier- and well-doping on the ISB absorption are reported. [reprint (PDF)]
14.	Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions D. Gauthier , L. Dmowski, J.C. Portal D. Leadley, M.A. Hopkins , M.A. Brummell , R.J. Nicholas, M. Razeghi, P. Maurel D. Gauthier, L. Dmowski, J.C. Portal, D. Leadley, M.A. Hopkins, M.A. Brummell, R.J. Nicholas, M. Razeghi, P. Maurel, Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions, Superlattices and Microstructures, Volume 4, Issue 2, 1988, Pages 201-206-- August 17, 1987 ...[Visit Journal] A study of the effective mass in GaInAs/InP heterojunctions under hydrostatic pressure up to 15 kbars is presented. Earlier results have shown the importance of hydrostatic pressure effects on the band parameters of the heterojunction to explain the experimental decrease of the carrier concentration with pressure at the interface (1). Here magnetophonon resonance experiments are performed to work out the increase of mass with pressure in our samples. The effective mass at atmospheric pressure is deduced from high temperature cyclotron resonance experiments and then used to calculate the frequency of the phonon interacting with the 2D electron gas (wo). The value of wo is found to be dependent on the carrier concentration of the measured samples. The lowest value is found for the highest carrier concentration sample. A band edge effective mass increase of 1 ± .1% kbar is found in the highest carrier concentration sample. This is two times smaller than the rate found experimentally in GaInAs bulk material and slightly smaller than in an AlInAs/GaInAs heterojunction. The experimental increase could be fitted with multiband k.p theory assuming no pressure dependence for the conduction band-valence band matrix element Ep. However at lower concentration a variation of the matrix element Ep with pressure has to be considered. [reprint (PDF)]
14.	1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD M. Razeghi, B. de Crémoux, J.P. Duchemin M. Razeghi, B. de Crémoux, J.P. Duchemin, 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD, Journal of Crystal Growth, Volume 68, Issue 1, 1984, Pages 389-397,-- September 1, 1984 ...[Visit Journal] Room temperature pulse operation and continuous wave (CW) operation in the 1.2–1.6 μm region have been achieved in GaInAsP-InP DH lasers fabricated on material grown by LPMOCVD. Threshold currents density as low as 430 A/cm2 (cavity length of 950 μm) have been measured for devices emitting at 1.3 μm. Threshold current densities of 1060 A/cm2 (cavity length of 400 μm) have been obtained for devices emitting at 1.55 μm, with active layer thicknesses of 0.22 μm. Values of T0 between 60 and 70 K have been obtained. Fundamental transverse mode oscillation has been achieved (for CW operation) up to an output power of 10 mW. The preliminary results on the aging test are most encouraging and demonstrate that the LPMOCVD lasers emitting at 1.2–1.6 μm have comparable degradation rates to those of LPE lasers suggesting the LPMOCVD technique is promising for large scale production of laser diodes. [reprint (PDF)]
14.	Relaxation kinetics in quantum cascade laser S. Slivken, V. Litvinov, M. Razeghi, and J.R. Meyer Journal of Applied Physics 85 (2)-- January 15, 1999 ...[Visit Journal] Relaxation kinetics in a quantum cascade intersubband laser are investigated. Distribution functions and gain spectra of a three-subband double-quantum-well active region are obtained as a function of temperature and injection current. The potentially important role of the nonequilibrium phonons at lasing threshold is shown and discussed in details. It is shown that the threshold current is strongly dependent of the power dissipated in the active region in steady state. The numerical calculations for an 8.5 μm laser illustrate the general issues of relaxation kinetics in quantum cascade lasers. Temperature dependence of the threshold current is obtained in a good agreement with the experiments. [reprint (PDF)]
14.	Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power Y. Bai, S.R. Darvish, S. Slivken, W. Zhang, A. Evans, J. Nguyen and M. Razeghi Applied Physics Letters, Vol. 92, No. 10, p. 101105-1-- March 10, 2008 ...[Visit Journal] We demonstrate quantum cascade lasers at an emitting wavelength of 4.6 µm, which are capable of room temperature, high power continuous wave (cw) operation. Buried ridge geometry with a width of 9.8 µm was utilized. A device with a 3 mm cavity length that was epilayer-down bonded on a diamond submount exhibited a maximum output power of 1.3 W at room temperature in cw operation. The maximum output power at 80 K was measured to be 4 W, with a wall plug efficiency of 27%. [reprint (PDF)]
14.	Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi Physica Status Solidi 214 (4), pp. 1770120-- April 4, 2017 ...[Visit Journal] The growth of thick, high quality, and low stress AlN films on Si substrates is highly desired for a number of applications like the development of micro and nano electromechanical system (MEMS and NEMS) technologies [1] and particularly for fabricating AlGaNbased UV LEDs [2–5]. UV LEDs are attractive as they are applied in many areas, such as biomedical instrumentations and dermatology, curing of industrial resins and inks, air purification, water sterilization, and many others [2, 3]. UV LEDs have been generally fabricated on AlN, GaN, Al₂O₃, or SiC substrates because of better lattice mismatching to AlGaN material systems. [reprint (PDF)]
14.	Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs) J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z. Tidrow Applied Physics Letters, 84 (13)-- April 29, 2004 ...[Visit Journal] We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×10¹⁰ cm·Hz^½/W was achieved at T = 95 K and a bias of –1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T = 77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. [reprint (PDF)]
14.	Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes Z. Vashaei, C. Bayram, R. McClintock and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-27, 2011), Vol 7945, p. 79451A-- January 23, 2011 ...[Visit Journal] Al(Ga)N/GaN resonant tunneling diodes (RTDs) are grown by metal-organic chemical vapor deposition. The effects of material quality on room temperature negative differential resistance (NDR) behaviour of RTDs are investigated by growing the RTD structure on AlN, GaN, and lateral epitaxial overgrowth GaN templates. This reveals that NDR characteristics of RTDs are very sensitive to material quality (such as surface roughness and dislocations density). The effects of the aluminum content of AlGaN double barriers (DB) and polarization fields on NDR characteristic of AlGaN/GaN RTDs were also investigated by employing low dislocation density c-plane (polar) and m-plane (nonpolar) freestanding GaN substrates. Lower aluminum content in the DB RTD active layer and minimization of dislocations and polarization fields enabled a more reliable and reproducible NDR behaviour at room temperature. [reprint (PDF)]

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