Center for Quantum Devices - Most Downloaded Journal Articles

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15.	Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport V.E. Sandana, D.J. Rogers, F. Hosseini Teherani, R. McClintock, C. Bayram, M. Razeghi, H-J Drouhin, M.C. Clochard, V. Sallett, G. Garry, and F. Falyouni Journal of Vacuum Science and Technology B, Vol. 27, No. 3, May/June, p. 1678-1683-- May 29, 2009 ...[Visit Journal] This article compares the forms and properties of ZnO nanostructures grown on Si (111) and c-plane sapphire (c-Al₂O₃) substrates using three different growth processes: metal organic chemical vapor deposition (MOCVD), pulsed laser deposition (PLD), and physical vapor transport (PVT). A very wide range of ZnO nanostructures was observed, including nanorods, nanoneedles, nanocombs, and some novel structures resembelling “bevelled” nanowires. PVT gave the widest family of nanostructures. PLD gave dense regular arrays of nanorods with a preferred orientation perpendicular to the substrate plane on both Si and c-Al₂O₃ substrates, without the use of a catalyst. X-ray diffraction (XRD) studies confirmed that nanostructures grown by PLD were better crystallized and more highly oriented than those grown by PVT and MOCVD. Samples grown on Si showed relatively poor XRD response but lower wavelength emission and narrower linewidths in PL studies. [reprint (PDF)]
15.	Recent performance records for mid-IR quantum cascade lasers M. Razeghi; Y. Bai; S. Slivken; S. Kuboya; S.R. Darvish Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR International Workshop [5379656], (2009) -- November 9, 2009 ...[Visit Journal] The wall plug efficiency of the mid-infrared quantum cascade laser in room temperature continuous wave operation is brought to 17%. Peak output power from a broad area (400 μm x 3 mm) device gives 120 W output power in pulsed mode operation at room temperature. Using a single-well-injector design, specifically made for low temperature operation, a record wall plug efficiency of 53% is demonstrated at 40 K. [reprint (PDF)]
15.	Effect of sidewall surface recombination on the quantum efficiency in a Y₂O₃ passivated gated type-II InAs/GaSb long-infrared photodetector array G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi Appl. Phys. Lett. 103, 223501 (2013)-- November 25, 2013 ...[Visit Journal] Y₂O₃ was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO₂ passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at −300 mV of 2.5 × 10⁻⁵ A/cm² and 1.3 × 10⁴ Ω·cm², respectively, and a specific detectivity of 1.4 × 10¹² Jones. [reprint (PDF)]
15.	Semiconductor ultraviolet detectors M. Razeghi and A. Rogalski Journal of Applied Physics Applied Physics Review 79 (10)-- May 15, 1996 ...[Visit Journal] In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail. [reprint (PDF)]
15.	Observation of Room Temperature Surface-Emitting Stimulated Emission from GaN:Ge by Optical pumping X. Zhang, P. Kung, A. Saxler, D. Walker, and M. Razeghi Journal of Applied Physics 80 (11)-- December 1, 1996 ...[Visit Journal] Optically pumped surface-emitting stimulated emission at room temperature was observed from GaN:Ge grown by metalorganic chemical vapor deposition. The sample was optically pumped perpendicularly on the top surface while the stimulated emission was collected from the back colinearly with the pump beam. The cavity was formed by the GaN/air and GaN/sapphire interfaces without any other structure. The stimulated emission was gain guided by the pump beam. The threshold optical pump density for stimulated emission was approximately 2.8 MW/cm² and the linewidth was 2.5 nm. The emission from GaN:Ge showed a redshift as the pump density increased. The comparison between theoretical calculations and experimental results suggested that many-body interactions can account well for the redshift. [reprint (PDF)]
15.	Low frequency noise in 1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi SPIE Proceedings, Vol. 8268, p. 82680X-- January 22, 2012 ...[Visit Journal] Recently, the type-II InAs/GaSb superlattice (T2SL) material platform is considered as a potential alternative for HgCdTe technology in long wavelength infrared (LWIR) imaging. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. In this paper, we report electrical low frequency noise measurement on a high performance type-II InAs/GaSb superlattice 1024×1024 LWIR focal plane array. [reprint (PDF)]
15.	Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi Physica Status Solidi 214 (4), pp. 1770120-- April 4, 2017 ...[Visit Journal] The growth of thick, high quality, and low stress AlN films on Si substrates is highly desired for a number of applications like the development of micro and nano electromechanical system (MEMS and NEMS) technologies [1] and particularly for fabricating AlGaNbased UV LEDs [2–5]. UV LEDs are attractive as they are applied in many areas, such as biomedical instrumentations and dermatology, curing of industrial resins and inks, air purification, water sterilization, and many others [2, 3]. UV LEDs have been generally fabricated on AlN, GaN, Al₂O₃, or SiC substrates because of better lattice mismatching to AlGaN material systems. [reprint (PDF)]
15.	Recent advances in antimonide-based gap-engineered Type-II superlattices material system for 2 and 3 colors infrared imagers Manijeh. Razeghi, Abbas Haddadi, Arash Dehzangi, Romain Chevallier, and Thomas Yang Proceedings of SPIE 10177, Infrared Technology and Applications XLIII, 1017705-- May 9, 2017 ...[Visit Journal] InAs/InAs_1-xSb_x/AlAs_1-xSb_x type-II superlattices (T2SLs) is a system of multi-interacting quantum wells. Since its introduction, this material system has drawn a lot of attention especially for infrared detection. In recent years, InAs/InAs_1- xSb_x/AlAs_1-xSb_x T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photodetectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of InAs/InAs_1-xSb_x/AlAs_1-xSb_x T2SL-based photodetectors for detection in different infrared regions, from short-wavelength (SWIR) to long-wavelength (LWIR) infrared, and the future outlook of this material system. [reprint (PDF)]
15.	High peak power 16 m InP-related quantum cascade laser A. Szerlinga,∗, S. Slivkenb, M. RazeghibaInstytut Opto-Electronics Review 25, pp. 205–208-- July 22, 2017 ...[Visit Journal] tIn this paper ∼16 μm-emitting multimode InP-related quantum cascade lasers are presented with themaximum operating temperature 373 K, peak and average optical power equal to 720 mW and 4.8 mW at 303 K, respectively, and the characteristic temperature (T₀) 272 K. Two types of the lasers were fabricatedand characterized: the lasers with a SiO₂ layer left untouched in the area of the metal-free window ontop of the ridge, and the lasers with the SiO₂layer removed from the metal-free window area. Dual-wavelength operation was obtained, at ∼15.6 μm (641 cm⁻¹) and at ∼16.6 μm (602 cm⁻¹) for laserswith SiO₂-removed, while within the emission spectrum of the lasers with SiO₂-left untouched only the former lasing peak was present. The parameters of these devices like threshold current, optical power and emission wavelength are compared. Lasers without the SiO₂ layer showed ∼15% lower threshold current than these ones with the SiO₂ layer. The optical powers for lasers without SiO₂ layer were almost twice higher than for the lasers with the SiO₂ layer on the top of the ridge. [reprint (PDF)]
15.	Comparison of Gain and Threshold Current Density for InGaAsP/GaAs λ = 808 nm) Lasers with Different Quantum-Well Thickness H.J. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L.J. Wang, and M. Razeghi Journal of Applied Physics 79 (11)-- July 1, 1996 ...[Visit Journal] We investigated the quantum‐size effects of quantum well (QW) on gain and threshold current density for InGaAsP/GaAs (λ=808 nm) laser diodes. In this work, a comparison is made of lasers with different QW thickness while keeping the optical confinement factors constant. We found that the threshold current density and differential efficiency were not affected by narrowing the QW thickness. The theoretical model taking into account the mixing of the valence bands and momentum relaxation for InGaAsP/GaAs lasers with spontaneous emission (optically pumped) measurement shows that the absence of difference between these structures can be attributed to the high relaxation rate. [reprint (PDF)]
15.	High power broad area quantum cascade lasers Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi Applied Physics Letters, Vol. 95, No. 22, p. 221104-1-- November 30, 2009 ...[Visit Journal] Broad area quantum cascade lasers (QCLs) are studied with ridge widths up to 400 µm, in room temperature pulsed mode operation at an emission wavelength around 4.45 µm. The peak output power scales linearly with the ridge width. A maximum total peak output power of 120 W is obtained from a single 400-µm-wide device with a cavity length of 3 mm. A stable far field emission characteristic is observed with dual lobes at ±38° for all tested devices, which suggests that these broad area QCLs are highly resistant to filamentation. [reprint (PDF)]
15.	Thin-Film Antimonide-Based Photodetectors Integrated on Si Yiyun Zhang , Member, IEEE, Abbas Haddadi, Member, IEEE, Romain Chevallier, Arash Dehzangi, Member, IEEE, and Manijeh Razeghi , Life Fellow, IEEE IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 2-- April 1, 2018 ...[Visit Journal] Monolithic integration of antimonide (Sb)-based compound semiconductors on Si is in high demand to enrich silicon photonics by extending the detection range to longer infrared wavelengths. In this paper, we have demonstrated the damage-free transfer of large-area (1×1 cm² ) narrow-bandgap Sb-based type-II superlattice (T2SL)-based thin-film materials onto a Si substrate using a combination of wafer-bonding and chemical epilayer release techniques. An array of Sb-based T2SL-based long-wavelength infrared (LWIR) photodetectors with diameters from 100 to 400 μm has been successfully fabricated using standard "top–down" processing technique. The transferred LWIR photodetectors exhibit a cut-off wavelength of λ 8.6 μm at 77 K. The dark current density of the transferred photodetectors under 200 mV applied bias at 77 K is as low as 5.7×10⁻⁴ A/cm² and the R×A reaches 66.3 Ω·cm², exhibiting no electrical degradation compared with reference samples on GaSb native substrate. The quantum efficiency and peak responsivity at 6.75 μm (@77 K, 200 mV) are 46.2% and 2.44 A/W, respectively. The specific detectivity (D^*) at 6.75 μm reaches as high as 1.6×10¹¹ cm·Hz^1/2/W under 200 mV bias at 77 K. Our method opens a reliable pathway to realize high performance and practical Sb-based optoelectronic devices on a Si platform. [reprint (PDF)]
15.	Negative luminescence of InAs/GaSb superlattice photodiodes F. Fuchs, D. Hoffman, A. Gin, A. Hood, Y. Wei, and M. Razeghi Phys. Stat. Sol. C 3 (3)-- February 22, 2006 ...[Visit Journal] The emission behaviour of InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 µm and 13 μm. With a radiometric calibration of the experimental set-up the internal quantum efficiency has been determined in the temperature range between 80 K and 300 K for both, the negative and positive luminescence. The quantitative analysis of the internal quantum efficiency of the non-equilibrium radiation enables the determination of the Auger coefficient. [reprint (PDF)]
15.	High Quality Type-II InAs/GaSb Superlattices with Cutoff Wavelength ~3.7 µm Using Interface Engineering Y. Wei, J. Bae, A. Gin, A. Hood, M. Razeghi, G.J. Brown, and M. Tidrow Journal of Applied Physics, 94 (7)-- October 1, 2003 ...[Visit Journal] We report the most recent advance in the area of Type-II InAs/GaSb superlattices that have cutoff wavelength of ~3.7 µm. With Ga_xIn_1–x type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ~4.5 meV using an Ar+ ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T1 = 245 K at sample temperatures below 160 K with fluent power of 70 mW, and T1 = 203 K for sample temperatures above 180 K with fluent power of 70 and 420 mW. [reprint (PDF)]
15.	High-Power (~9 μm) Quantum Cascade Lasers S. Slivken, Z. Huang, A. Evans, and M. Razeghi Virtual Journal of Nanoscale Science and Technology 5 (22)-- June 3, 2002 ...[Visit Journal][reprint (PDF)]
15.	High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi Optics Express, Vol. 21, No. 1, p. 968-- January 14, 2013 ...[Visit Journal] We demonstrate high power, room temperature, single-mode THz emissions based on intracavity difference frequency generation from mid-infrared quantum cascade lasers. Dual active regions both featuring giant nonlinear susceptibilities are used to enhance the THz power and conversion efficiency. The THz frequency is lithographically tuned by integrated dual-period distributed feedback gratings with different grating periods. Single mode emissions from 3.3 to 4.6 THz with side-mode suppression ratio and output power up to 40 dB and 65 µW are obtained, with a narrow linewidth of 5 GHz. [reprint (PDF)]
15.	Review of high power frequency comb sources based on InP From MIR to THZ at CQD Manijeh Razeghi, Quanyong Lu, Donghai Wu, Steven Slivken Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States-- September 14, 2018 ...[Visit Journal] We present the recent development of high performance compact frequency comb sources based on mid-infrared quantum cascade lasers. Significant performance improvements of our frequency combs with respect to the continuous wave power output, spectral bandwidth, and beatnote linewidth are achieved by systematic optimization of the device's active region, group velocity dispersion, and waveguide design. To date, we have demonstrated the most efficient, high power frequency comb operation from a free-running room temperature continuous wave (RT CW) dispersion engineered QCL at λ~5-9 μm. In terms of bandwidth, the comb covered a broad spectral range of 120 cm⁻¹ with a radio-frequency intermode beatnote spectral linewidth of 40 Hz and a total power output of 880 mW at 8 μm and 1 W at ~5.0 μm. The developing characteristics show the potential for fast detection of various gas molecules. Furthermore, THz comb sources based on difference frequency generation in a mid-IR QCL combs could be potentially developed. [reprint (PDF)]
15.	InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection A. Haddadi , G. Chen , R. Chevallier , A. M. Hoang , and M. Razeghi Appl. Phys. Lett. 105, 121104 (2014)-- September 22, 2014 ...[Visit Journal] High performance long-wavelength infrared nBn photodetectors based on InAs/InAs_1−xSb_x type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at −90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm² and a dark current density of 4.4 × 10⁻⁴ A/cm² under −90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 10¹¹ cm·Hz^1/2·W^-1. [reprint (PDF)]
15.	High power 1D and 2D photonic crystal distributed feedback quantum cascade lasers B. Gokden, Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79450C-- January 23, 2011 ...[Visit Journal] For many practical applications that need bright sources of mid-infrared radiation, single mode operation and good beam quality are also required. Quantum cascade lasers are prominent candidates as compact sources of mid-infrared radiation capable of delivering very high power both CW and under pulsed operation. While 1D photonic crystal distributed feedback structures can be used to get single mode operation from quantum cascade lasers with narrow ridge widths, novel 2D photonic crystal cavity designs can be used to improve spectral and spatial purity of broad area quantum cascade lasers. In this paper, we demonstrate high power, spatially and spectrally pure operation at room temperature from narrow ridge and broad area quantum cascade lasers with buried 1D and 2D photonic crystal structures. Single mode continuous wave emission at λ = 4.8 μm up to 700 mW in epi-up configuration at room temperature was observed from a 11 μm wide 5 mm long distributed feedback quantum cascade laser with buried 1D gratings. High peak powers up to 34 W was obtained from a 3mm long 400 μm wide 2D photonic crystal distributed feedback laser at room temperature under pulsed operation. The far field profile had a single peak normal to the laser facet and the M2 figure of merit was as low as 2.5. Emission spectrum had a dominating single mode at λ = 4.36 μm. [reprint (PDF)]
15.	Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice F. Callewaert, A.M. Hoang, and M. Razeghi Applied Physics Letters, 104, 053508 (2014)-- February 6, 2014 ...[Visit Journal] A long wavelength infrared minority electron unipolar photodetector based on InAs/GaSb type-II superlattices is demonstrated. At 77 K, a dark current of 3 × 10⁻⁵ A/cm² and a differential resistance-area of 3 700 Ω·cm² are achieved at the turn-on bias, with a 50%-cutoff of 10.0 μm and a specific detectivity of 6.2 × 10¹¹ Jones. The dark current is fitted as a function of bias and temperature using a model combining generation-recombination and trap-assisted tunneling. Good agreement was observed between the theory and the experimental dark current. [reprint (PDF)]
14.	MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates M. Razeghi, M. Defour , F. Omnes, P. Maurel , E. Bigan , O. Acher, J. Nagle, F. Brillouet , J.C. Portal M. Razeghi, M. Defour, F. Omnes, P. Maurel, E. Bigan, O. Acher, J. Nagle, F. Brillouet, J.C. Portal, MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates, Journal of Crystal Growth, Volume 93, Issues 1–4, 1988, Pages 776-781,-- January 1, 1988 ...[Visit Journal] High quality II[-V semiconductor heterojunctions, quantum wells and superlauices have been grown on lattice matched and alternative substrates such as silicon for photonic and electronic devices, using low pressure metalorganic chemical vapor deposition growth technique. [reprint (PDF)]
14.	Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, and B.M. Nguyen Opto-Electronics Review (OER), Vol. 19, No. 3, June 2011, p. 46-54-- June 1, 2011 ...[Visit Journal] Recent efforts to improve the performance of type-II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K. [reprint (PDF)]
14.	Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN C. Bayram, J.L. Pau, R. McClintock and M. Razeghi Applied Physics B: Lasers and Optics, Vol. 95, p. 307-314-- November 29, 2008 ...[Visit Journal] Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with identical structures grown on conventional GaN. Atomic force microscopy is used to confirm the significant reduction of dislocations in the wing region of our LEO samples before active-region growth. Differences between surface morphologies of blue and green MQWs are analyzed. These MQWs are integrated into LEDs. All devices show a blue shift in the electroluminescence (EL) peak and narrowing in EL spectra with increasing injection current, both characteristics attributed to the band-gap renormalization. Green LEDs show a larger EL peak shift and a broader EL spectrum due to larger piezoelectric field and more indium segregation in the MQWs, respectively. Blue LEDs on LEO GaN show a higher performance than those on conventional GaN; however, no performance difference is observed for green LEDs on LEO GaN versus conventional GaN. The performance of the green LEDs is shown to be primarily limited by the active layer growth quality. [reprint (PDF)]
14.	Tl incorporation in InSb and lattice contraction of In_1-xTl_xSb J.J. Lee and M. Razeghi Applied Physics Letters 76 (3)-- January 17, 2000 ...[Visit Journal] Ternary In_1−xTl_xSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In_1−xTl_xSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In_1−xTl_xSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In_1−xTl_xSb differs from that of other group III impurities in III antimonides. [reprint (PDF)]
14.	Neutron Activation Analysis of an Iranian Cigarette and its Smoke Z. Abedinzadeh, M. Razeghi and B. Parsa Z. Abedinzadeh, M. Razeghi and B. Parsa, Journal of Radioanalytical Chemistry, VoL 35 [1977) 373-376-- September 1, 1977 ...[Visit Journal] Non-destructive neutron activation analysis, employing a high-resolution Ge(Li) detector, was applied to determine the concentration of 24 trace elements in the tobacco of the Zarrin cigarette which is commercially made in Iran. These elements are: Na, K, Sc, Cr, Mn, Fe, Co, Zn, Se, Br, Rb, Ag, Sb, Cs, Ba, La, Ce, Sm, Eu, Tb, Hf, Au, Hg and Th. The smokes from the combustion of this tobacco and of the cigarette paper were also analysed for these elements and the percentage transference values were calculated. [reprint (PDF)]

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