Center for Quantum Devices - Most Downloaded Journal Articles

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16.	Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates X. Zhang, P. Kung, A. Saxler, D. Walker, T.C. Wang, and M. Razeghi Applied Physics Letters 67 (12)-- September 18, 1995 ...[Visit Journal] Al_xGa_1–xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0 <= x <= 1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive Al_xGa_1–xN epilayers were successfully doped with Ge and free-electron concentration as high as 3 × 10¹⁹ cm^–3 was achieved. [reprint (PDF)]
16.	Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition S.N. Song, J.B. Ketterson, Y.H. Choi, R. Sudharsanan, and M. Razeghi Applied Physics Letters 63 (7)-- August 16, 1993 ...[Visit Journal] We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films epitaxially grown on GaAs substrates by metalorganic chemical vapor deposition. The films show a giant magnetoresistance: e.g., at 240 K the resistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 μ·Ω· cm/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresistance may be understood based on a two-layer model. [reprint (PDF)]
16.	InP-based quantum-dot infrared photodetectors with high quantum efficiency and high temperature imaging S. Tsao, H. Lim, H. Seo, W. Zhang and M. Razeghi IEEE Sensors Journal, Vol. 8, No. 6, p. 936-941-- June 1, 2008 ...[Visit Journal] We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 6 x 10¹⁰cm·Hz^1/2·W^-1 at 150 K and a bias of 5 V with a peak detection wavelength around 4.0 micron and a quantum efficiency of 48%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature. A 320 x 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also demonstrated. The focal plane array had 34 mA/W responsivity, 1.1% conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature. [reprint (PDF)]
16.	p-doped GaAs/Ga_0.51In_0.49P quantum well intersub-band photodetectors J. Hoff, X. He, M. Erdtmann, E. Bigan, M. Razeghi, and G.J. Brown Journal of Applied Physics 78 (3)-- August 1, 1995 ...[Visit Journal] Lattice‐matched p-doped GaAs–Ga_0.51In_0.49P quantum well intersub‐band photodetectors with three different well widths have been grown on GaAs substrates by metal‐organic chemical‐vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig–Penney calculations. [reprint (PDF)]
16.	Semiconductor ultraviolet detectors M. Razeghi and A. Rogalski SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685-- January 27, 1996 ...[Visit Journal] This paper presents an overview of semiconductor ultraviolet (UV) detectors that are currently available and associated technologies that are undergoing further development. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further consideration are restricted to modern semiconductor UV detectors, so the current state-of-the-art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main effort are currently directed to a new generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail. [reprint (PDF)]
16.	Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning Steven Slivken and Manijeh Razeghi Photonics 3, 41-- June 27, 2016 ...[Visit Journal] In an effort to overcome current limitations to electrical tuning of quantum cascade lasers, a strategy is proposed which combines heterogeneous quantum cascade laser gain engineering with sampled grating architectures. This approach seeks to not only widen the accessible spectral range for an individual emitter, but also compensate for functional non-uniformity of reflectivity and gain lineshapes. A trial laser with a dual wavelength core is presented which exhibits electroluminescence over a 750 cm⁻¹ range and discrete single mode laser emission over a 700 cm⁻¹ range. Electrical tuning over 180 cm⁻¹ is demonstrated with a simple sampled grating design. A path forward to even wider tuning is also described using more sophisticated gain and grating design principles. [reprint (PDF)]
16.	High-responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition M. Erdtmann, A. Matlis, C. Jelen, M. Razeghi, and G. Brown SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] We have studied the dependence of the well doping density in n-type GaInAs/InP quantum well IR photodetectors (QWIPs) grown by low-pressure metalorganic chemical vapor deposition. Three identical GaInAs/InP QWIP structures were grown with well sheet carrier densities of 1x10¹¹ cm^-2, 3x10¹¹ cm^-2, and 10x10¹¹ cm^-2; all three samples had very sharp spectral response at λ equals 9.0 μm. We find that there is a large sensitivity of responsivity, dark current, noise current, and detectivity with the well doping density. Measurements revealed that the lowest-doped samples had an extremely low responsivity relative to the doping concentration while the highest-doped sample had an excessively high dark current relative to doping. The middle-doped sample yielded the optimal results. This QWIP had a responsivity of 33.2 A/W and operated with a detectivity of 3.5x10¹⁰ cm·Hz^½·W^-1 at a bias of 0.75 V and temperature of 80 K. This responsivity is the highest value reported for any QWIP in the (lambda) equals 8-9 &mus;m range. Analysis is also presented explaining the dependence of the measured QWIP parameters to well doping density. [reprint (PDF)]
16.	Recent advances in mid infrared (3-5 μm) quantum cascade lasers Manijeh Razeghi; Neelanjan Bandyopadhyay; Yanbo Bai; Quanyong Lu; Steven Slivken Optical Materials Express, Vol. 3, Issue 11, pp. 1872-1884 (2013)-- November 2, 2013 ...[Visit Journal] Quantum cascade laser (QCL) is an important source of electromagnetic radiation in mid infrared region. Recent research in mid-IR QCLs has resulted in record high wallplug efficiency (WPE), high continuous wave (CW) output power, single mode operation and wide tunability. CW output power of 5.1 W with 21% WPE has been achieved at room temperature (RT). A record high WPE of 53% at 40K has been demonstrated. Operation wavelength of QCL in CW at RT has been extended to as short as 3μm. Very high peak power of 190 W has been obtained from a broad area QCL of ridge width 400μm. 2.4W RT, CW power output has been achieved from a distributed feedback (DFB) QCL. Wide tuning based on dual section sample grating DFB QCLs has resulted in individual tuning of 50cm-1 and 24 dB side mode suppression ratio with continuous wave power greater than 100 mW. [reprint (PDF)]
16.	InGaAs/InGaP Quantum-Dot Photodetector with a High Detectivity H. Lim, S. Tsao, M. Taguchi, W. Zhang, A. Quivy and M. Razeghi SPIE Conference, San Jose, CA, Vol. 6127, pp. 61270N-- January 23, 2006 ...[Visit Journal] Quantum-dot infrared photodetectors (QDIPs) have recently been considered as strong candidates for numerous applications such as night vision, space communication, gas analysis and medical diagnosis involving middle and long wavelength infrared (MWIR and LWIR respectively) operation. This is due to their unique properties arising from their 3-dimensional confinement potential that provides a discrete density of states. They are expected to outperform quantum-well infrared photodetectors (QWIPs) as a consequence of their natural sensitivity to normal incident radiation, their higher responsivity and their higher-temperature operation. So far, most of the QDIPs reported in the literature were based on the InAs/GaAs system and were grown by molecular beam epitaxy (MBE). Here, we report on the growth of a high detectivity InGaAs/InGaP QDIP grown on a GaAs substrate using low-pressure metalorganic chemical vapor deposition (MOCVD). [reprint (PDF)]
16.	InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi Proc. SPIE 9819, Infrared Technology and Applications XLII, 981909-- May 20, 2016 ...[Visit Journal] We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x10¹¹ cm•Hz^½/W at 77 K, where RxA and dark current density were 119 Ω•cm² and 4.4x10^-4 A/cm² , respectively, under -90 mV applied bias voltage [reprint (PDF)]
16.	The Molecular Beam Epitaxial Growth of InSb on (111) GaAs E. Michel, J. Kim, J. Xu, S. Javadpour, I. Ferguson, and M. Razeghi Applied Physics Letters 69 (2)-- July 8, 1996 ...[Visit Journal] The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb. [reprint (PDF)]
16.	Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers Manijeh Razeghi, Arash Dehzangi, Donghai Wu, Ryan McClintock, Yiyun Zhang, Quentin Durlin, Jiakai Li, Fanfei Meng Proc. SPIE Defense + Commercial Sensing,Infrared Technology and Applications XLV, 110020G -- May 7, 2019 ...[Visit Journal] Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonidebased gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for MercuryCadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as highperformance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Zuantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE). [reprint (PDF)]
16.	High power 1D and 2D photonic crystal distributed feedback quantum cascade lasers B. Gokden, Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79450C-- January 23, 2011 ...[Visit Journal] For many practical applications that need bright sources of mid-infrared radiation, single mode operation and good beam quality are also required. Quantum cascade lasers are prominent candidates as compact sources of mid-infrared radiation capable of delivering very high power both CW and under pulsed operation. While 1D photonic crystal distributed feedback structures can be used to get single mode operation from quantum cascade lasers with narrow ridge widths, novel 2D photonic crystal cavity designs can be used to improve spectral and spatial purity of broad area quantum cascade lasers. In this paper, we demonstrate high power, spatially and spectrally pure operation at room temperature from narrow ridge and broad area quantum cascade lasers with buried 1D and 2D photonic crystal structures. Single mode continuous wave emission at λ = 4.8 μm up to 700 mW in epi-up configuration at room temperature was observed from a 11 μm wide 5 mm long distributed feedback quantum cascade laser with buried 1D gratings. High peak powers up to 34 W was obtained from a 3mm long 400 μm wide 2D photonic crystal distributed feedback laser at room temperature under pulsed operation. The far field profile had a single peak normal to the laser facet and the M2 figure of merit was as low as 2.5. Emission spectrum had a dominating single mode at λ = 4.36 μm. [reprint (PDF)]
16.	Fabrication of nanostructured heterojunction LEDs using self-forming Moth-Eye Arrays of n-ZnO Nanocones Grown on p-Si (111) by PLD D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi; H.-J. Drouhin Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 721708 (February 17, 2009)-- February 17, 2009 ...[Visit Journal] ZnO nanostructures were grown on Si (111) substrates using Pulsed Laser Deposition. The impact of growth temperature (T_s) and Ar pressure (P_Ar) on the morphology, crystal structure and photoluminescence was investigated. Various types of ZnO nanostructures were obtained. Self-forming arrays of vertically-aligned nanorods and nanocones with strong c-axis crystallographic orientation and good optical response were obtained at higher T_s. The nanocone, or "moth-eye" type structures were selected for LED development because of their graded effective refractive index, which could facilitate improved light extraction at the LED/air interface. Such moth-eye arrays were grown on p-type Si (111) substrates to form heteroj unction LEDs with the n-type ZnO nanocones acting as an active component of the device. These nanostructured LEDs gave rectifying I/V characteristics with a threshold voltage of about 6V and a blueish-white electroluminescence, which was clearly visible to the naked eye. [reprint (PDF)]
16.	Broad area photonic crystal distributed feedback quantum cascade lasers emitting 34 W at λ ~ 4.36 μm B. Gokden, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 97, No. 13, p. 131112-1-- September 27, 2010 ...[Visit Journal] We demonstrate room temperature, high power, single mode, and diffraction limited operation of a two dimensional photonic crystal distributed feedback quantum cascade laser emitting at 4.36 μm. Total peak power up to 34 W is observed from a 3 mm long laser with 400 μm cavity width at room temperature. Far-field profiles have M2 figure of merit as low as 2.5. This device represents a significant step toward realization of spatially and spectrally pure broad area high power quantum cascade lasers. [reprint (PDF)]
16.	High Performance Type-II InAs/GaSb Superlattice Photodiodes H. Mohseni, Y. Wei, and M. Razeghi SPIE Conference, San Jose, CA, -- January 22, 2001 ...[Visit Journal] We report on the demonstration of high performance p-i-n photodiodes based on Type-II InAs/GaSb superlattices operating in the very long wavelength infrared (VLWIR) range at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and atomic force microscopy. The processed devices with a 50% cutoff wavelength of λ_c equals 22 μm show a peak current responsivity about 5.5 A/W at 80 K. The use of binary layers in the superlattice has significantly enhanced the uniformity and reproducibility of the energy gap. The 90% to 10% cut-off energy width of these devices is on the order of 2 kT which is about four times smaller compared to the devices based on InAs/Ga1-xInxSb superlattices. Similar photovoltaic devices with cut-off wavelengths up to 25 μm have been measured at 80 K. Our experimental results shows excellent uniformity over a three inch wafer area, indicating the possibility of VLWIR focal plane arrays based on Type-II superlattices. [reprint (PDF)]
16.	Infrared Imaging Arrays Using Advanced III-V Materials and technology M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseni, J.J. Lee, J. Wojkowski, K.S. Kim, H.I. Jeon, and J. X IEEE Proceedings, Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain;-- January 6, 1997 ...[Visit Journal] Photodetectors operating in the 3-5 and 8-12 μm atmospheric windows are of great importance for applications in infrared (IR) thermal imaging. HgCdTe has been the dominant material system for these applications. However, it suffers from instability and non-uniformity problems over large areas due to high Hg vapor pressure during the material, growth. There has been a lot of interest in the use of heteroepitaxially grown Sb-based alloys, its strained layer superlattices, and GaAs based quantum wells as alternatives to MCT. This interest has been driven by the advanced material growth and processing technology available for the III-V material system [reprint (PDF)]
16.	Very high quality p-type Al_xGa_1-xN/GaN superlattice A. Yasan and M. Razeghi special ISDRS issue of Solid State Electronics Journal, 47-- January 1, 2003 ...[Visit Journal] Very high quality p-type Al_xGa_1−xN/GaN superlattice has been achieved through optimization of Mg flow and period of superlattice. Theoretical model was used to optimize the structure of superlattice by choosing suitable Al compositions and superlattice periods. The experiments show that for x=0.26, the resistivity is as low as 0.19 Ω cm and hole concentration is as high as 4.2×10¹⁸ cm⁻³, the highest values ever reported for p-type AlGaN/GaN superlattices. Hall effect measurement and admittance spectroscopy on the samples confirm the high quality of the superlattices. The activation energy calculated for p-type GaN and p-type A_0.1Ga_0.9N/GaN superlattice is estimated to be not, vert, similar 125 and 3 meV respectively. [reprint (PDF)]
16.	Recent advances in InAs/InAs1- xSbx/AlAs1-xSbx gap-engineered Type-II superlattice-based photodetectors Manijeh Razeghi, Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Thomas Yang Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017705 -- May 9, 2017 ...[Visit Journal] InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices (T2SLs) is a system of multi-interacting quantum wells. Since its introduction, this material system has drawn a lot of attention especially for infrared detection. In recent years, InAs/InAs1- xSbx/AlAs1-xSbx T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photodetectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of InAs/InAs1-xSbx/AlAs1-xSbx T2SL-based photodetectors for detection in different infrared regions, from short-wavelength (SWIR) to long-wavelength (LWIR) infrared, and the future outlook of this material system. [reprint (PDF)]
16.	AlGaN ultraviolet photoconductors grown on sapphire D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi Applied Physics Letters 68 (15)-- April 8, 1996 ...[Visit Journal] Al_xGa_1−xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage‐dependent responsivity is 0.13–0.36 ms. [reprint (PDF)]
16.	GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications J.P. Duchemin, J.P. Hirtz, M. Razeghi, M. Bonnet , S.D. Hersee J.P. Duchemin, J.P. Hirtz, M. Razeghi, M. Bonnet, S.D. Hersee, GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications, Journal of Crystal Growth, Volume 55, Issue 1, 1981, Pages 64-73-- October 1, 1981 ...[Visit Journal] The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-matched to InP, for the complete compositional range between InP (λ=0.91 μm) and the ternary compound Ga0.47In0.53As (λ=1.67 μm). By contrast to LPE growth it has been found that during the MOCVD growth of double heterostructures InP can be grown directly onto the ternary or quaternary with no disturbance of the active layer, i.e. there is no effect equivalent to “melt back”. The compositional grading on both sides of the active layer was measured by scanning Auger spectroscopy on bevelled samples. It was found that the graded regions were typically less than 100 Å wide for GaInAsP active layers and less than 50 Å wide for GaInAs active layers. Single layers of undoped GaInAs exhibited a typical mobility of 6700 cm2 V-1s-1 at 1.5×1017 cm-3. The compositional uniformity of the ternary layers was characterised by measurement of the photoluminescence wavelength at various points on a large sample. The wavelength varied by <3 nm over 95% of the area, which was approximately 8 cm2. Our early MOCVD grown GaInAsP/InP DH lasers exhibited high thresholds due to a poor interface between the p-InP and the active layer. However, recently fabricated broad area lasers emitting at 1.27 μm show an average threshold current density of 1.5 kA cm-2 with a T0 of between 70 to 80 K. Stripe geometry lasers have being fabricated from this material and CW operation has been obtained. [reprint (PDF)]
16.	Photoluminescence Study of AlGaN-based 280 nm Ultraviolet Light-Emitting Diodes A. Yasan, R. McClintock, K. Mayes, D.H. Kim, P. Kung, and M. Razeghi Applied Physics Letters, 83 (20)-- November 17, 2003 ...[Visit Journal] We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-emitting diodes using temperature-dependent photoluminescence (PL) measurement. We found an "S-shaped" temperature dependence of the peak energy. From the Arrhenius plot of integrated PL intensity, we speculate that dislocations as well as thermal emission of carriers out of the quantum well are responsible for the PL quenching behavior. Also a second nonradiative channel with much lower activation energy was found, the origin of which we believe to be quenching of the bound excitons [reprint (PDF)]
16.	Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates D. J. Rogers ; P. Bove ; F. Hosseini Teherani ; K. Pantzas ; T. Moudakir ; G. Orsal ; G. Patriarche ; S. Gautier ; A. Ougazzaden ; V. E. Sandana ; R. McClintock ; M. Razeghi Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862611 (March 18, 2013)-- March 18, 2013 ...[Visit Journal] InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer bonding. Both processes were found to function at RT and allow reclaim of the expensive single crystal substrate. Both approaches have also already been demonstrated to work for the wafer-scale transfer of III/V semiconductors. Compared with the industry-standard LLO, the CLO offers the added advantages of a lattice match to InGaN with higher indium contents, no need for an interfacial adhesive layer (which facilitates electrical, optical and thermal coupling), no damaged/contaminated GaN surface layer, simplified sapphire reclaim (GaN residue after LLO may complicate reclaim) and cost savings linked to elimination of the expensive LLO process. [reprint (PDF)]
16.	High speed type-II superlattice based photodetectors transferred on sapphire Arash Dehzangi, Ryan McClintock, Donghai Wu, Jiakai Li, Stephen Johnson, Emily Dial and Manijeh Razeghi Applied Physics Express, Volume 12, Number 11-- October 3, 2019 ...[Visit Journal] We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the −3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance. Direct Link [reprint (PDF)]
16.	Low frequency noise in 1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi SPIE Proceedings, Vol. 8268, p. 82680X-- January 22, 2012 ...[Visit Journal] Recently, the type-II InAs/GaSb superlattice (T2SL) material platform is considered as a potential alternative for HgCdTe technology in long wavelength infrared (LWIR) imaging. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. In this paper, we report electrical low frequency noise measurement on a high performance type-II InAs/GaSb superlattice 1024×1024 LWIR focal plane array. [reprint (PDF)]

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