Conferences by    
Page 9 of 13:  Prev << 1 2 3 4 5 6 7 8 9  10 11 12 13  >> Next  (616 Items)

401.   Quantum Sensing Using Artificial Atoms: Inspiration from Nature
SPIE International Symposium on Photonics Fabrication Europe
Brugge, Belgium -- October 28, 2002
 
402.   Artificial Atoms: Next Generation of Infrared Multispectral FPAs
Electrochemical Society Symposium on Narrow Bandgap Optoelectronic Materials and Devices
Salt Lake City, UT -- October 20, 2002
 
403.   High Power Quantum Cascade Lasers Grown by GasMBE
International Conference on Solid State Crystals-Materials Science and Applications (ICSSC)
Zakopane, Poland -- October 14, 2002
 
404.   Recent advances in III-nitride-based UV optoelectronics
International Conference on Solid State Crystals-Materials Science and Applications (ICSSC)
Zakopane, Poland -- October 14, 2002
 
405.   Recent Advances in Quantum Cascade Lasers Grown by GasMBE
11th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA)
Cheju Island, Korea -- August 20, 2002
 
406.   OEIC for Next Generation WDM Communications
ITCOm 2002 + Opticom2002 SPIE Symposium, Active and Passive Optical Components for WDM Communication II
Boston, MA -- July 29, 2002
 
407.   Further Advances in Quantum Cascade Laser Performance
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 3, 2002
 
408.   High Performance Quantum Cascade Laser Results at the Center for Quantum Devices
EXMATEC 2002 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
Budapest, Hungary -- May 26, 2002
 
409.   Artificial Atoms: Solution for Infrared Multicolor Focal Plane Arrays
Quantum IR Structures Session, American Physical Society Meeting
Indianapolis, IN -- March 18, 2002
 
410.   AlInGaN/AlInGaN UV LED Grown by Low-Pressure MOCVD
7th Wide Bandgap III-Nitride Workshop
Richmond, VA -- March 10, 2002
 
411.   Type II InAs/GaSb Superlattice Photovoltaic Detector with 50% Cutoff at 18.8 µm
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD)
Austin, TX -- February 17, 2002
 
412.   9 µm High Power, Low Threshold Quantum Cascade Lasers Grown by Gas-Source MBE
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD)
Austin, TX -- February 17, 2002
 
413.   UV AlInGaN/AlInGaN LED Grown by LP-MOCVD
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD)
Austin, TX -- February 17, 2002
 
414.   High Performance VLWIR Photodetectors based on InAs/GaSb type-II Superlattices
SPIE International Symposium on Optoelectronics 2002, Photodetector Materials and Devices II
San Jose, CA -- January 21, 2002
 
415.   Optoelectronic Integrated Circuit (OEIC’s) Application in WDM
SPIE International Symposium on Optoelectronics 2002, Optoelectronic Integrated Circuits
San Jose, CA -- January 21, 2002
 
416.   Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2002, Photodetector Materials and Devices VII
San Jose, CA -- January 21, 2002
 
417.   Recent Advances and Future Trends in Mid-Infrared Semiconductor Lasers
Contemporary Photonics Technology (CPT) Symposium
Tokyo, Japan -- January 15, 2002
 
418.   Artificial Atoms and Molecules: Enabling Technology for the New Millenium
Advanced Workshop on Frontiers in Electronics (WOFE-02)
St. Croix, Virgin Islands -- January 6, 2002
 
419.   Quantization for High Performance Infrared Laser Diodes
International Workshop on the Physics of Semiconductor Devices (IWPSD)
Delhi, India -- December 11, 2001
 
420.   Recent Advances and Future Trends of InAs/GaSb Superlattice for Very Long Wavelength Infrared Focal Plane Arrays (FPAs)
International Semiconductor Device Research Symposium (ISDRS’01)
Washington, DC -- December 5, 2001
 
421.   Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current Density
International Semiconductor Device Research Symposium (ISDRS’01
Washington, DC -- December 5, 2001
 
422.   Very High Quality p-type AlxGa1-xN/GaN Superlattice
International Semiconductor Device Research Symposium (ISDRS’01
Washington, DC -- December 5, 2001
 
423.   Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing
Materials Research Society (MRS) Fall Meeting, Symposium on Progress on Semiconductor Materials for Optoelectronic Applications
Boston, MA -- November 26, 2001
 
424.   Low Resistivity AlxGa1-xN/GaN Superlattices for UV Emitters: Development of AlGaN Based UV LED and Lasers (l ~ 280 nm)
III-Nitride UV Emitter Coordination Meeting, DARPA Workshop
University of Texas at Austin, TX -- November 7, 2001
 
425.   Overview of CQD Research Activity on Nanotechnology: Toward Atomic Scale
Distinguished Lecture Series, Materials and Nuclear Engineering Department
University of Maryland, MD -- November 2, 2001
 
426.   Tuning of QWIPs: New Possibilities
Workshop on Reconfigurable Focal Plane Arrays, Defense Advanced Research Projects Agency
Arlington, VA -- October 22, 2001
 
427.   InAs-GaSb Type II Superlattice for VLWIR Detectors
Quantum Electronics Conference
Glasgow, Scotland -- September 3, 2001
 
428.   Gated Nano-pillars for Uncooled Tunable Infrared Detectors
3rd Workshop on the Fabrication, Characterization and Application of III-V Semiconductors
Snowbird, UT -- July 31, 2001
 
429.   Type II Superlattices (InAs/GaSb/AlAs): Alternative for MCT for Infrared FPA
SPIE International Symposium on Optical Science and Technology, Materials for Infrared Detectors
San Diego, CA -- July 29, 2001
 
430.   Gated Nano-pillars for Uncooled Tunable Infrared Detectors
Future Trends in Microelectronics (FTM): The Nano Millennium
Ile de Bendor, France -- June 25, 2001
 
431.   Type II Superlattices for VLWIR
Air Force Office of Scientific Research, Semiconductor Detector Program Review
Williamsburg, VA -- June 4, 2001
 
432.   AlxGa1-xN for Solar Blind Focal Plane Arrays
DARPA MTO IR/UV Imaging Technologies Review Meeting
Panama City, FL -- May 22, 2001
 
433.   Recent Advances in Mid-Infrared Semiconductor Laser Diodes
Solid State Diode Laser Review (SSDLTR) Conference
Albuquerque, NM -- May 21, 2001
 
434.   Quantization for High Performance Infrared Laser Diodes
1st Annual U.S.-Korea-Japan Workshop on Nanostructure Science/Technology (WNST)
Hanyang University, Seoul, Korea -- April 23, 2001
 
435.   Enabling Technologies for the 21st Century, Overview of CQD Research Activity
Review of Center for Optoelectronic Devices, Interconnects and Packaging (COEDIP)
University of Arizona, Tucson -- April 11, 2001
 
436.   Quantum Dots of GaN Based Materials for 280 nm Lasers
III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency
Arlington, VA -- April 9, 2001
 
437.   CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices
Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference
Montpellier, France -- April 1, 2001
 
438.   Infrared Quantum Well Laser Diodes: State of the Art and Future Trends
Advanced Research Workshop on Semiconductor Nanostructures
Queenstown, New Zealand -- February 5, 2001
 
439.   High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V
San Jose, CA -- January 22, 2001
 
440.   Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
441.   AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
442.   High Performance Type-II InAs/GaSb Superlattice Photodiodes
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
443.   Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
444.   Quantum Dot Infrared Photodetectors Compared with QWIPs
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
445.   Enabling Technology for the New Millenium: Toward Atomic Scale
Colloquium Seminar, Department of Physics, University of Illinois at Chicago
Chicago, IL -- January 17, 2001
 
446.   AlxGa1-xN for Solar Blind UV Detectors
International Specialist Meeting on Bulk Nitride Growth and Related Techniques
Parana, Brazil -- November 12, 2000
 
447.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000)
Cheju Island, Korea -- November 1, 2000
 
448.   Uncooled Integrated Sensors
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
449.   High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
450.   Advanced Lasers and Detector Integrated Systems
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 

Page 9 of 13:  Prev << 1 2 3 4 5 6 7 8 9  10 11 12 13  >> Next  (616 Items)