| 301. | State of the art of Type II superlattices in infrared detection and imaging
International Conference on Narrow Gap Semiconductors and Systems (NGS-2)
Sendai, Japan -- July 13, 2009
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| 302. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
International Symposium on Photoelectronic Detection and Imaging
Beijing, China -- June 17, 2009
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| 303. | Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices
AFOSR Joint Electronics Program Review
Arlington, VA -- May 27, 2009
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| 304. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 6, 2009
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| 305. | Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 5, 2009
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| 306. | Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
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| 307. | High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
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| 308. | Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
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| 309. | III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 310. | Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 311. | Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 312. | GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 313. | The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 314. | Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 315. | Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 316. | Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV
San Jose, CA -- January 25, 2009
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| 317. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI
San Jose, CA -- January 25, 2009
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| 318. | High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII
San Jose, CA -- January 25, 2009
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| 319. | High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 20, 2009
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| 320. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 19, 2009
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| 321. | Modern Atomic Engineering: Inspiration from Nature
Distinguished Speaker, EECS Department, Northwestern University
Evanston, IL -- December 3, 2008
[Conference Link]
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| 322. | High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays
26th Army Conference
Orlando, FL -- December 1, 2008
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| 323. | High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
U.S. Workshop on the Physics and Chemistry of II-VI Materials
Las Vegas, NV -- November 11, 2008
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| 324. | Building a Better Infrared Laser with Band Structure Engineering
Invited Seminar, Department of Physics and Optical Science
University of North Carolina at Charlotte -- October 17, 2008
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| 325. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
NRO, Invited Seminar
Chantilly, VA -- October 7, 2008
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| 326. | Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development
DARPA Common Platform Composite Wafer Technology: IR Materials Workshop
Chicago, IL -- October 6, 2008
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| 327. | High Performance QC Lasers: Latest Achievements and Future Trends
International Quantum Cascade Lasers School and Workshop (IQCLSW)
Monte Verita, Switzerland -- September 14, 2008
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| 328. | Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
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| 329. | Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
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| 330. | III-Nitride Based UV Single Photon Detection (APDs)
2nd International Symposium on Growth of III-Nitrides (ISGN-2)
Laforet Shuzenji Izu, Japan -- July 6, 2008
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| 331. | Type II InAs/GaSb Superlattices: A Promising Material System for Infrared
2008 Euro American Workshop on Information Optics
Annecy, France -- June 1, 2008
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| 332. | Plenary Talk, New Frontiers in InP Based Quantum Devices
20th International Conference on Indium Phosphide and Related Materials (IPRM) 2008
Versailles, France -- May 25, 2008
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| 333. | Quantum Dots or Artificial Atoms: Solution for High Performance IR Thermal Imaging
Particles 2008 Conference
Orlando, FL -- May 10, 2008
|
| 334. | UV laser diodes based on AlGaN nanostructures
2008 AFRL-AFOSR Nanotechnology Initiative Review
Fairborn, OH -- May 6, 2008
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| 335. | Keynote Speaker, A Strong History of US-Korea Collaborations with the Center for Quantum Devices
US-AFOSR/South Korea-MOST Nanoscience Meeting
Arlington, VA -- April 25, 2008
|
| 336. | Modeling, Material Growth and Processing, Detector and FPA Fabrication and Characterization and Comparison of Type-II Superlattice and HgCdTe Performance and Cost
Type-II Strained Layer Superlattice (T2SL) IRFPA Workshop
Arlington, VA -- April 8, 2008
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| 337. | Atomic Control of Materials: Building Bloc for High Performance Quantum Devices
Workshop on Recent Advances of Low Dimensional Structures and Devices
Nottingham, England -- April 7, 2008
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| 338. | New optoelectronic components based on quantum structures
EOS Topical Meeting
Utrecht, Netherlands -- March 31, 2008
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| 339. | Electrically pumped photonic crystal distributed feedback quantum cascade lasers
MRS Symposium on Materials and Devices for Laser Remote Sensing & Optical Communication
San Francisco, CA -- March 24, 2008
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| 340. | Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXIV Conference
Orlando, FL -- March 17, 2008
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| 341. | Quest for Material Perfection: Atomic Engineering Shapes the Future
College of Optical Sciences Colloquium Lecture Series
University of Arizona, Tucson, AZ -- March 6, 2008
|
| 342. | Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes
Military Sensors Symposium (MSS)
Las Vegas, NV -- February 6, 2008
|
| 343. | High quantum efficiency QDIP and FPA based on self-assembled semiconductor quantum dots
Workshop on Nano Optoelectronics (WNO)
Seoul, Korea -- January 8, 2008
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| 344. | State-of-the-Art Type II Superlattices
Missile Defense Agency (MDA)-Lockheed Martin Industry Day
Sunnyvale, CA -- November 13, 2007
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| 345. | Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature
IEEE LEOS Conference
Orlando, FL -- October 22, 2007
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| 346. | High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
Advanced Infrared Technology and Applications 9 (AITA)
Leon, Guanajuato, Mexico -- October 9, 2007
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| 347. | Self-Assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room temperature and Focal Plane Array
Advanced Infrared Technology and Applications (AITA) International Workshop
Leon, Guanajuato, Mexico -- October 8, 2007
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| 348. | Research progress in type-II superlattice photodiodes for the long wavelength infrared at CQD
Air Force Research Laboratory
Kirtland AFB, NM -- September 27, 2007
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| 349. | Quantum Dot IR Detectors
Workshop on Nanoscale Epitaxial Semiconductor Structures (NESS)
Albuquerque, NM -- September 26, 2007
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| 350. | Current Status of Type II InAs/GaSb Superlattices MWIR-LWIR Photodiodes and FPA at the Center for Quantum Devices
Conference on Infrared Spaceborne Remote Sensing and Instrumentation XV, SPIE International Symposium on Optics and Photonics
San Diego, CA -- August 30, 2007
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu