Conferences by    
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201.   Penary Talk, Mastering power and efficiency of mid-infrared semiconductor lasers
European Semiconductor Laser Workshop (ESLW)
Pavia, Italy -- September 24, 2010
 
202.   Plenary Talk, State-of-art mid-infrared quantum cascade lasers
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
 
203.   Plenary Talk, Revolutionary development of infrared optoelectronics
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
 
204.   Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future trends
International Union of Materials Research Society-International Conference on Electronic Materials (IUMRS-ICEM)
Kintex, Seoul, Korea -- August 22, 2010
 
205.   Comparison of APDs grown on c- and m-plane substrates
SPIE Optics and Photonics Symposium
San Diego, CA -- August 5, 2010
 
206.   III-nitride based avalanche photo detectors
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2010
 
207.   Plenary Talk, Revolutionary development of infrared optoelectronics
1st International DNTAC Symposium on Nano Technology
Seoul, Korea -- July 14, 2010
 
208.   Plenary Talk: State-of-art mid-infrared quantum cascade lasers
SPIE Defense and Security Symposium (DSS)
Orlando, FL -- April 5, 2010
 
209.   Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable Earth
4th International Conference on LED and Solid State Lighting (LED 2010)
COEX, Seoul, Korea -- February 3, 2010
 
210.   Current status and potential of high power mid-infrared intersubband lasers
SPIE International Photonics West Symposium
San Francisco, CA -- January 25, 2010
 
211.   High performance quantum dot and quantum well infrared focala plane arrays
SPIE International Photonics West Symposium
San Francisco, CA -- January 24, 2010
 
212.   Watt level performance of photonic crystal distributed feedback quantum cascade laser
SPIE International Photonics West Symposium
San Francisco, CA -- January 23, 2010
 
213.   Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology
DRS RSTA Inc. - Infrared Technologies Division
Dallas, TX -- December 14, 2009
 
214.   Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up
IEEE Boston Photonics Society
MIT LIncoln Labs, Lexington, MA -- December 10, 2009
 
215.   Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology
National Research Council Committee on the Developments in Detector Technoloiges, The National Academies
Washington, DC -- December 8, 2009
 
216.   Recent advances in quantum cascade lasers at the Center for Quantum Devices
International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications
Turunc-Marmaris, Turkey -- November 3, 2009
 
217.   Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 7, 2009
 
218.   High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 6, 2009
 
219.   State of the art Type II superlattices in infrared detection and imaging
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 4, 2009
 
220.   State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2009
 
221.   State of the art of Type II superlattices in infrared detection and imaging
International Conference on Narrow Gap Semiconductors and Systems (NGS-2)
Sendai, Japan -- July 13, 2009
 
222.   Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
International Symposium on Photoelectronic Detection and Imaging
Beijing, China -- June 17, 2009
 
223.   Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices
AFOSR Joint Electronics Program Review
Arlington, VA -- May 27, 2009
 
224.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 6, 2009
 
225.   Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 5, 2009
 
226.   Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
227.   High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
228.   Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
 
229.   III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
230.   Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
231.   Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
232.   GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
233.   The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
234.   Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
235.   Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
236.   Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV
San Jose, CA -- January 25, 2009
 
237.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI
San Jose, CA -- January 25, 2009
 
238.   High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII
San Jose, CA -- January 25, 2009
 
239.   High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 20, 2009
 
240.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 19, 2009
 
241.   Modern Atomic Engineering: Inspiration from Nature
Distinguished Speaker, EECS Department, Northwestern University
Evanston, IL -- December 3, 2008
[Conference Link]
 
242.   High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays
26th Army Conference
Orlando, FL -- December 1, 2008
 
243.   High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
U.S. Workshop on the Physics and Chemistry of II-VI Materials
Las Vegas, NV -- November 11, 2008
 
244.   Building a Better Infrared Laser with Band Structure Engineering
Invited Seminar, Department of Physics and Optical Science
University of North Carolina at Charlotte -- October 17, 2008
 
245.   Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
NRO, Invited Seminar
Chantilly, VA -- October 7, 2008
 
246.   Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development
DARPA Common Platform Composite Wafer Technology: IR Materials Workshop
Chicago, IL -- October 6, 2008
 
247.   High Performance QC Lasers: Latest Achievements and Future Trends
International Quantum Cascade Lasers School and Workshop (IQCLSW)
Monte Verita, Switzerland -- September 14, 2008
 
248.   Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
 
249.   Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
 
250.   III-Nitride Based UV Single Photon Detection (APDs)
2nd International Symposium on Growth of III-Nitrides (ISGN-2)
Laforet Shuzenji Izu, Japan -- July 6, 2008
 

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