Conferences by    
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201.   Invited Talk, "Overview of Activity at the Center for Quantum Devices (CQD) especially Toward Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and Telecommunication"
Samsung Telecommunications America Inc.
Richardson, TX -- May 27, 2011
 
202.   Invited Talk, High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice
SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII
Orlando, FL -- April 28, 2011
 
203.   Invited Talk, Recent advances in high-performance antimonide-based superlattice FPAs
SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII
Orlando, FL -- April 26, 2011
 
204.   Keynote Talk, Toward realizing high power semiconductor terahertz lasers sources at room temperature
SPIE Defense, Security and Sensing Syposium, conference on Terahertz Physics, Devices and Systems V
Orlando, FL -- April 25, 2011
 
205.   Invited Talk: Widely tunable, single mode, high power quantum cascade lasers
Integrated Photonics: Materials, Devices and Applications Conference at SPIE 5th International Symposium on Microtechnologies for the New Millennium
Prague, Czech Republic -- April 19, 2011
 
206.   Distinguished Speaker, "Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up"
Centenary Celebrations of the Electrical and Computer Engineering Department at the University of Dayton
Dayton, OH -- April 8, 2011
 
207.   III-nitride resonant tunneling devices from growth to fabrication
SPIE Photonics West Symposium
San Francisco, CA -- January 26, 2011
 
208.   High power 1D and 2D photonic crystal distributed feedback quantum casacde laser
SPIE Photonics West Symposium
San Francisco, CA -- January 26, 2011
 
209.   Use of PLD-grown ZnO thin films and Nanostructures ....
SPIE Photonics West Symposium
San Francisco, CA -- January 26, 2011
 
210.   Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer
Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium
San Francisco, CA -- January 25, 2011
 
211.   Development of a sacrificial ZnO/c-Al(2)O(3) template approach to enable...
SPIE Photonics West Symposium
San Francisco, CA -- January 25, 2011
 
212.   Advances in UV sensitive visible blind GaN-based APDs
SPIE Photonics West Symposium
San Francisco, CA -- January 25, 2011
 
213.   High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers
Conference on "Photonic and Phononic Properties of Engineered Nanostructures," SPIE Photonics West Symposium
San Francisco, CA -- January 24, 2011
 
214.   Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes
Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium
San Francisco, CA -- January 24, 2011
 
215.   III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices
IEEE Photonics Society Annual Meeting - Integrated Optics, Optoelectronics and Interconnect (IOOI) Conference
Denver, CO -- November 10, 2010
 
216.   Penary Talk, Mastering power and efficiency of mid-infrared semiconductor lasers
European Semiconductor Laser Workshop (ESLW)
Pavia, Italy -- September 24, 2010
 
217.   Plenary Talk, State-of-art mid-infrared quantum cascade lasers
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
 
218.   Plenary Talk, Revolutionary development of infrared optoelectronics
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
 
219.   Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future trends
International Union of Materials Research Society-International Conference on Electronic Materials (IUMRS-ICEM)
Kintex, Seoul, Korea -- August 22, 2010
 
220.   Comparison of APDs grown on c- and m-plane substrates
SPIE Optics and Photonics Symposium
San Diego, CA -- August 5, 2010
 
221.   III-nitride based avalanche photo detectors
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2010
 
222.   Plenary Talk, Revolutionary development of infrared optoelectronics
1st International DNTAC Symposium on Nano Technology
Seoul, Korea -- July 14, 2010
 
223.   Plenary Talk: State-of-art mid-infrared quantum cascade lasers
SPIE Defense and Security Symposium (DSS)
Orlando, FL -- April 5, 2010
 
224.   Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable Earth
4th International Conference on LED and Solid State Lighting (LED 2010)
COEX, Seoul, Korea -- February 3, 2010
 
225.   Current status and potential of high power mid-infrared intersubband lasers
SPIE International Photonics West Symposium
San Francisco, CA -- January 25, 2010
 
226.   High performance quantum dot and quantum well infrared focala plane arrays
SPIE International Photonics West Symposium
San Francisco, CA -- January 24, 2010
 
227.   Watt level performance of photonic crystal distributed feedback quantum cascade laser
SPIE International Photonics West Symposium
San Francisco, CA -- January 23, 2010
 
228.   Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology
DRS RSTA Inc. - Infrared Technologies Division
Dallas, TX -- December 14, 2009
 
229.   Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up
IEEE Boston Photonics Society
MIT LIncoln Labs, Lexington, MA -- December 10, 2009
 
230.   Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology
National Research Council Committee on the Developments in Detector Technoloiges, The National Academies
Washington, DC -- December 8, 2009
 
231.   Recent advances in quantum cascade lasers at the Center for Quantum Devices
International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications
Turunc-Marmaris, Turkey -- November 3, 2009
 
232.   Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 7, 2009
 
233.   High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 6, 2009
 
234.   State of the art Type II superlattices in infrared detection and imaging
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 4, 2009
 
235.   State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2009
 
236.   State of the art of Type II superlattices in infrared detection and imaging
International Conference on Narrow Gap Semiconductors and Systems (NGS-2)
Sendai, Japan -- July 13, 2009
 
237.   Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
International Symposium on Photoelectronic Detection and Imaging
Beijing, China -- June 17, 2009
 
238.   Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices
AFOSR Joint Electronics Program Review
Arlington, VA -- May 27, 2009
 
239.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 6, 2009
 
240.   Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 5, 2009
 
241.   Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
242.   High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
243.   Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
 
244.   III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
245.   Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
246.   Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
247.   GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
248.   The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
249.   Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
250.   Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 

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