| 676. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 677. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 678. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
|
| 679. | Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
|
| 680. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
|
| 681. | III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
|
| 682. | GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
|
| 683. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
|
| 684. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 685. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 686. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 687. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 688. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 689. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 690. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 691. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 692. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 693. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 694. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 695. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 696. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 697. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 698. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 699. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 700. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu