| 676. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 677. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 678. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 679. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 �m Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 680. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 681. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 682. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 683. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 684. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 685. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 686. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 687. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 688. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 689. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 690. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 691. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 692. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 693. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 694. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 695. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 696. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
|
| 697. | Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 698. | Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 699. | Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
|
| 700. | Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu