| 676. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 677. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 678. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 679. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 680. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 681. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 682. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 683. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 684. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 685. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 686. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 687. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 688. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 689. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 690. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 691. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 692. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 693. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 694. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 695. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 696. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 697. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 698. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 699. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 700. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu