| 651. | Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
|
| 652. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
|
| 653. | Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
|
| 654. | III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
|
| 655. | High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 µm
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
|
| 656. | Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films
Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium
Chicago, IL -- May 12, 1997
|
| 657. | Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
|
| 658. | Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
|
| 659. | Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
|
| 660. | MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 661. | Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 662. | InAsSb/InAsSbP high-power laser diodes emitting 3-5 µm range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 663. | Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
|
| 664. | InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 665. | InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 666. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 667. | AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 668. | Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 669. | Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
|
| 670. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 671. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 672. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 673. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 674. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 675. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu