Conferences by    
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651.   InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
652.   Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
653.   AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
654.   Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
655.   Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
 
656.   High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
657.   GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
658.   Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
659.   High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
660.   Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
661.   Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
 
662.   Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
 
663.   Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
 
664.   III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
 
665.   GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
 
666.   Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
 
667.   Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
 
668.   MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
 
669.   Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
 
670.   MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
 
671.   Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
 
672.   The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
 
673.   Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
 
674.   Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 
675.   UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 

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