651. | InTlSb and InAsSb for 8-12 µm near room temperature operation SPIE Photonics West '97, Photodetectors: Materials and Devices II San Jose, CA -- February 8, 1997 |
652. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors SPIE Photonics West '97, Photodetectors: Materials and Devices II San Jose, CA -- February 8, 1997 |
653. | AlGaN ultraviolet detectors SPIE Photonics West '97, Photodetectors: Materials and Devices II San Jose, CA -- February 8, 1997 |
654. | Intrinsic AlGaN photoconductors for the entire compositional range SPIE Photonics West '97, Photodetectors: Materials and Devices II San Jose, CA -- February 8, 1997 |
655. | Infrared Imaging Arrays Using Advanced III-V Materials Advanced Workshop on Frontiers in Electronics (WOFE) Canary Islands, Spain -- January 6, 1997 |
656. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range Materials Research Society Fall Meeting Boston, MA -- December 2, 1996 |
657. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging Materials Research Society Fall Meeting Boston, MA -- December 2, 1996 |
658. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures, Materials Research Society Fall Meeting Boston, MA -- December 2, 1996 |
659. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates Materials Research Society Fall Meeting Boston, MA -- December 2, 1996 |
660. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays Materials Research Society Fall Meeting Boston, MA -- December 2, 1996 |
661. | Recent Advances in III-Nitride Materials, Characterization and Device Applications 8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96) Seoul, Korea -- October 21, 1996 |
662. | Sb-based Infrared FPA on GaAs and Si DARPA/ETO Optoelectronics Program Review Orlando, FL -- October 7, 1996 |
663. | Recent Advances in III-Nitride Materials, Characterization and Device Applications XII Conference on Solid State Crystals, Materials Science and Applications Zakopane, Poland -- October 7, 1996 |
664. | III-V Interband and Intraband Far-Infrared Detectors 23rd International Symposium on Compound Semiconductors St. Petersburg, Russia -- September 23, 1996 |
665. | GaAs-GaInP(As) p-type and n-type QWIPs Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review Wright-Patterson AFB, OH -- August 22, 1996 |
666. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors Air Force Wright Laboratory Wright-Patterson AFB, OH -- June 17, 1996 |
667. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range CLEO/QELS '96 Anaheim, CA -- June 2, 1996 |
668. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2 International Symposium on Nitrides St. Malo, France -- May 29, 1996 |
669. | Development of III-Nitride Technology for Optoelectronic Devices DARPA/ETO GaN Workshop Reston, VA -- May 9, 1996 |
670. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers IEEE 9th International Conference on Semiconducting and Insulating Materials Toulouse, France -- April 29, 1996 |
671. | Wide Bandgap III-Nitride Semiconductors and Their Applications Electrical Engineering Department, University of Minnesota Minneapolis, MN -- March 28, 1996 |
672. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems SPIE Photonics West '96, "WDM Components" San Jose, CA -- January 27, 1996 |
673. | Semiconductor Ultraviolet Detectors SPIE Photonics West '96, "WDM Components" San Jose, CA -- January 27, 1996 |
674. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range SPIE Photonics West '96 San Jose, CA -- January 27, 1996 |
675. | UV Photodetectors Based on AlGaN Grown by MOCVD SPIE Photonics West '96 San Jose, CA -- January 27, 1996 |