| 626. | Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
|
| 627. | 21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
|
| 628. | InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions
CLEO Conference, “Semiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
|
| 629. | Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
|
| 630. | Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 631. | High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 632. | Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 633. | Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 634. | Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 635. | Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 636. | Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 637. | Multiple quantum well structures for multicolor infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 638. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 639. | Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 640. | 8.5 µm room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Integrated Optic Devices II
San Jose, CA -- January 24, 1998
|
| 641. | Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition
SPIE Photonics West '98, In-Plane Semiconductor Laser
San Jose, CA -- January 24, 1998
|
| 642. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 643. | New Developments in III-Nitride Material and Device Applications
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 644. | InP-based Multi-Spectral Quantum Well Infrared Photodetectors
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 645. | Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 646. | Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
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| 647. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
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| 648. | Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
|
| 649. | III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
|
| 650. | High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 µm
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu