| 601. | Highlights of High Power Infrared Injection Laser Diodes (3-10 µm)
Naval Research Laboratory
Washington, DC -- May 5, 1999
|
| 602. | High Power 3-5 µm InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
|
| 603. | Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
|
| 604. | Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
|
| 605. | Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices
Compound Semiconductor Outlook ‘99 Conference
San Diego, CA -- March 1, 1999
|
| 606. | LEO of GaN on sapphire and Si substrates
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
|
| 607. | UV, MSM and p-i-n detectors, UV blue laser diodes
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
|
| 608. | Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 609. | Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 610. | Multi-color 4-20 µm InP-based Quantum Well Infrared Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 611. | Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 612. | Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 613. | Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 614. | Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 615. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 616. | AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 617. | Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 618. | Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 619. | Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
|
| 620. | Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
|
| 621. | Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
|
| 622. | Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
|
| 623. | Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
|
| 624. | Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
|
| 625. | Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu