| 601. | Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 602. | Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 603. | Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 604. | Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 605. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 606. | AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 607. | Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 608. | Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
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| 609. | Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
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| 610. | Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
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| 611. | Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
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| 612. | Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
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| 613. | Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
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| 614. | Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
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| 615. | Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
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| 616. | Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging
Physics at the Turn of the 21st Century Conference
St. Petersburg, Russia -- September 28, 1998
|
| 617. | Recent Advance fo Mid-Infrared Semiconductor Lasers
Semiconductor Science and Technology ‘98
La Jolla, CA -- September 7, 1998
|
| 618. | Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 619. | Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 620. | Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 µm) Laser Diodes
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 621. | Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon
Wide Bandgap Nitride Semiconductor Workshop
St. Louis, MO -- August 4, 1998
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| 622. | Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
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| 623. | 21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
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| 624. | InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions
CLEO Conference, “Semiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
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| 625. | Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu