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Conferences by all title confrence location keywords date     Page 24 of 29:  Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24  25 26 27 28 29  >> Next  (718 Items) 576.   Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications Low Dimensional Structures and Devices (LDSD’99) Alanya, Turkey -- September 15, 1999   577.   High power mid-infrared III-V semiconductor injection laser diodes Low Dimensional Structures and Devices (LDSD’99) Alanya, Turkey -- September 15, 1999   578.   MOCVD Growth and Characterization of GaN on Si Substrates Gallium Nitride Electronic Device Workshop, Cornell University Ithaca, NY -- August 16, 1999   579.   LEO of III-Nitride on Al2 O3 and Si substrates Lateral Epitaxial Overgrowth (From Theory to Design) Workshop Juneau, Alaska -- August 2, 1999   580.   Solard Blind Detectors Arrays DARPA/MTO Optoelectronics Review Meeting San Diego, CA -- August 2, 1999   581.   High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century Workshop on Frontier in Electronics (WOFE-99) Grenoble, France -- May 30, 1999   582.   High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 µm Conference on Lasers and Electro-Optics (CLEO) Baltimore, MD -- May 23, 1999   583.   InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 µm grown by low pressure metal-organic chemical vapor deposition Conference on Lasers and Electro-Optics (CLEO) Baltimore, MD -- May 23, 1999   584.   Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses Conference on Lasers and Electro-Optics (CLEO) Baltimore, MD -- May 23, 1999   585.   High Power Infrared Injection Laser Diodes (3-10 µm) Diode Laser Technology Review (DLTR) Ft. Walton Beach, FL -- May 11, 1999   586.   Highlights of High Power Infrared Injection Laser Diodes (3-10 µm) Naval Research Laboratory Washington, DC -- May 5, 1999   587.   High Power 3-5 µm InAsSb-based Lasers DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP) Arlington, VA -- May 3, 1999   588.   Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI) Naval Research Laboratory Washington, DC -- March 16, 1999   589.   Demonstration of Uncooled InAsSb Photodetectors for Military Sensors DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging Alexandria, VA -- March 16, 1999   590.   Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices Compound Semiconductor Outlook ‘99 Conference San Diego, CA -- March 1, 1999   591.   LEO of GaN on sapphire and Si substrates Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99) New Orleans, LA -- February 22, 1999   592.   UV, MSM and p-i-n detectors, UV blue laser diodes Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99) New Orleans, LA -- February 22, 1999   593.   Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   594.   Electrical Characterization of AlxGa1-xN for UV Photodetector Applications SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   595.   Multi-color 4-20 µm InP-based Quantum Well Infrared Detectors SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   596.   Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   597.   Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   598.   Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   599.   Internal Street Around Micropipes in 6H-SiC Substrates SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   600.   Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999   Page 24 of 29:  Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24  25 26 27 28 29  >> Next  (718 Items)

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