| 576. | Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 577. | Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 578. | Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
|
| 579. | New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
|
| 580. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 581. | High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 582. | First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 583. | Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 584. | High Power 3-12 µm Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
|
| 585. | Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA ‘99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
|
| 586. | GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
|
| 587. | Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
|
| 588. | High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
|
| 589. | MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
|
| 590. | LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
|
| 591. | Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
|
| 592. | High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
|
| 593. | High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 µm
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 594. | InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 µm grown by low pressure metal-organic chemical vapor deposition
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 595. | Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 596. | High Power Infrared Injection Laser Diodes (3-10 µm)
Diode Laser Technology Review (DLTR)
Ft. Walton Beach, FL -- May 11, 1999
|
| 597. | Highlights of High Power Infrared Injection Laser Diodes (3-10 µm)
Naval Research Laboratory
Washington, DC -- May 5, 1999
|
| 598. | High Power 3-5 µm InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
|
| 599. | Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
|
| 600. | Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu