| 551. | Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 552. | Quantum Dot Infrared Photodetectors Compared with QWIPs
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 553. | Enabling Technology for the New Millenium: Toward Atomic Scale
Colloquium Seminar, Department of Physics, University of Illinois at Chicago
Chicago, IL -- January 17, 2001
|
| 554. | AlxGa1-xN for Solar Blind UV Detectors
International Specialist Meeting on Bulk Nitride Growth and Related Techniques
Parana, Brazil -- November 12, 2000
|
| 555. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000)
Cheju Island, Korea -- November 1, 2000
|
| 556. | Uncooled Integrated Sensors
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 557. | High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 558. | Advanced Lasers and Detector Integrated Systems
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 559. | Miniaturization: Enabling Technology for the New Millenium
Keynote Address, International Conference on Solid State Crystals - Materials Science and Application
Zakopane, Poland -- October 9, 2000
|
| 560. | Quantum Sensing
Office of Naval Research
Washington, DC -- September 15, 2000
|
| 561. | Past, Present and Future of Infrared Photodetectors
Air Force Office of Scientific Research
Arlington, VA -- September 14, 2000
|
| 562. | Advanced Lasers and Detector Integrated Systems (ALADINS)
DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting
Williamsburg, VA -- September 12, 2000
|
| 563. | Quantum Well Infrared Photodetectors (3-20 µm) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance
SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI
San Diego, CA -- July 30, 2000
|
| 564. | Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
QWIP Workshop
Dana Point, CA -- July 27, 2000
|
| 565. | Recent Advances and Future Trends of High Power IR Laser Diodes
Tenth International Conference on Laser Optics
St. Petersburg, Russia -- June 26, 2000
|
| 566. | Material Development and Applications for UV Detectors
Nagoya Institute of Technology
Nagoya, Japan -- June 12, 2000
|
| 567. | Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 µm Grown by Gas-MBE
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 5, 2000
|
| 568. | Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
Sapporo, Japan -- June 5, 2000
|
| 569. | UV Photodetectors
6th Annual Widegap III-Nitride Workshop 2000
Richmond, VA -- March 12, 2000
|
| 570. | Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors
Rockwell Science Center
Thousand Oaks, CA -- February 28, 2000
|
| 571. | LEO of III-Nitride on Al2O3and Si Substrates
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 572. | Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 573. | Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 574. | Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 575. | High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu