| 401. | U.S.-Japan Young Researchers Exchange Program for Nanotechnology and Nanomanufacturing
Host, Site Visit sponsored by the National Science Foundation
Evanston, IL -- March 10, 2006
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| 402. | High-Power, Continuous-Wave Quantum Cascade Lasers Operating at Room Temperature
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD)
Scottsdale, AZ -- February 19, 2006
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| 403. | Survival Skills for Female Graduate Students and Junior Faculty
Northwestern University Women’s Center
Evanston, IL -- February 15, 2006
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| 404. | InAs quantum dot infrared photodetectors on InP by MOCVD
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 405. | Quantum dot infrared photodetectors: Comparison of experiment and theory
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 406. | Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 407. | Optical coatings for improved performance of quantum cascade lasers by ion-beam sputtering deposition and comparison to other techniques
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 408. | InGaAs/InGaP/GaAs quantum dot infrared photodetector focal plane array development
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 409. | InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
|
| 410. | Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
|
| 411. | High Power, Continuous-Wave, Quantum Cascade Lasers for MWIR and LWIR Applications
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
|
| 412. | Solar-Blind Avalanche Photodiodes
SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III
San Jose, CA -- January 21, 2006
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| 413. | Dry Etching of ZnO Towards the Development of ZnO Homostructure LEDs
SPIE International Photonics West Symposium, Zinc Oxide Materials and Devices
San Jose, CA -- January 21, 2006
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| 414. | Mid-Infrared Quantum Cascade Lasers for High Temperature Applications
2nd Symposium on IR Materials and Technologies
State College, PA -- November 21, 2005
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| 415. | Infrared Sensing Technology with Nanostructures – Quantum Dot and Nanopillar
Nanostructured Materials: Environmental, Energy, and Sensing Applications Symposium
Barga, Italy -- September 18, 2005
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| 416. | High Power, CW, RT, DFB-CQD Lasers Emitting at 4.8 Microns
International Conference on Advanced Optoelectronics and Lasers (CAOL 2005)
Yalta, Crimea, Ukraine -- September 12, 2005
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| 417. | High power, CW, QCLs operating at high temperature
MIOMD-VII
Lancaster, United Kingdom -- September 12, 2005
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| 418. | Quantum Dot Infrared Photodetectors & Focal Plane Arrays
MIOMD-VII
Lancaster, United Kingdom -- September 12, 2005
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| 419. | High Temperature, High Power, CW Operation of Quantum Cascade Lasers
8th International Conference on Intersubband Transitions in Quantum Wells (ITQW’20005)
Cape Cod, MA -- September 11, 2005
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| 420. | Type II InAs/GaSb Superlattice as an Excellent Candidate for the Next Generation Infrared FPAs
SPIE International Congress on Optics and Optoelectronics
Warsaw, Poland -- August 28, 2005
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| 421. | AlGaN p-n Junctions for 280 nm APDs and UV Lasers
DARPA Workshop on Deep Ultraviolet Photodetectors
Arlington, VA -- August 26, 2005
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| 422. | Recent Improvements in Quantum Cascade Lasers at the Center for Quantum Devices
12th international Conference on Narrow Gap Semiconductors (NGS)
Toulouse, France -- July 3, 2005
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| 423. | QWIP, QDIP, and FPA at Center for Quantum Devices
12th international Conference on Narrow Gap Semiconductors (NGS)
Toulouse, France -- July 3, 2005
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| 424. | Recent Achievements of Type II InAs/GaSb Superlattices for LWIR Focal Plane Arrays
12th International Conference on Narrow Gap Semiconductors (NGS)
Toulouse, France -- July 3, 2005
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| 425. | Recent Advances in 3-5 mm InGaAs/InAlAs/InP Quantum Cascade Lasers
CLEO/EUROPE-EQEC Conference
CLEO/EUROPE-EQEC Conference -- June 12, 2005
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu