| 326. | Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
|
| 327. | High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
|
| 328. | Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
|
| 329. | III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 330. | Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 331. | Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 332. | GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 333. | The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 334. | Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 335. | Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
|
| 336. | Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV
San Jose, CA -- January 25, 2009
|
| 337. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI
San Jose, CA -- January 25, 2009
|
| 338. | High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII
San Jose, CA -- January 25, 2009
|
| 339. | High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 20, 2009
|
| 340. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 19, 2009
|
| 341. | Modern Atomic Engineering: Inspiration from Nature
Distinguished Speaker, EECS Department, Northwestern University
Evanston, IL -- December 3, 2008
[Conference Link]
|
| 342. | High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays
26th Army Conference
Orlando, FL -- December 1, 2008
|
| 343. | High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
U.S. Workshop on the Physics and Chemistry of II-VI Materials
Las Vegas, NV -- November 11, 2008
|
| 344. | Building a Better Infrared Laser with Band Structure Engineering
Invited Seminar, Department of Physics and Optical Science
University of North Carolina at Charlotte -- October 17, 2008
|
| 345. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
NRO, Invited Seminar
Chantilly, VA -- October 7, 2008
|
| 346. | Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development
DARPA Common Platform Composite Wafer Technology: IR Materials Workshop
Chicago, IL -- October 6, 2008
|
| 347. | High Performance QC Lasers: Latest Achievements and Future Trends
International Quantum Cascade Lasers School and Workshop (IQCLSW)
Monte Verita, Switzerland -- September 14, 2008
|
| 348. | Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
|
| 349. | Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
|
| 350. | III-Nitride Based UV Single Photon Detection (APDs)
2nd International Symposium on Growth of III-Nitrides (ISGN-2)
Laforet Shuzenji Izu, Japan -- July 6, 2008
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu