Conferences by    
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601.   Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
602.   Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
603.   Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
604.   High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
 
605.   Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
 
606.   (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
 
607.   III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
 
608.   High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
 
609.   Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
 
610.   Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
 
611.   Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
 
612.   Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
 
613.   Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
 
614.   Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD
The Electrochemical Society Meeting on 2-20m Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 11, 1994
 
615.   Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 m Laser Diodes
IEEE 14th International Semiconductor Laser Conference
Maui, Hawaii -- September 19, 1994
 
616.   Novel Devices
Advanced Research Projects Agency/Microelectronics Technology Office (DARPA/MTO) Program Reviews
Alexandria, VA -- June 9, 1994
 
617.   InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping
Conference on Lasers and Electro-Optics (CLEO '94)
Anaheim, CA -- May 8, 1994
 
618.   Physics and Applications of Advanced Semiconductor Technology and Future Trends
Physics Department, University of Western Ontario
London, Canada -- March 9, 1994
 
619.   GaN Based Materials for Blue Lasers
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD '94)
San Francisco, CA -- February 20, 1994
 
620.   InGaAsP/GaAs diode lasers for Nd:YAG pumping
SPIE Conference OE/LASE '94
Los Angeles, CA -- January 24, 1994
 
621.   Growth of III-V Nitrides
National Research Council, Committee on Materials for High-Temperature Semiconductor Devices
Washington, DC -- December 14, 1993
 
622.   Optoelectronic Research at Northwestern and Industry Relations
Italian Trade Commission and Northwestern's International Business Development Program
Chicago, IL -- December 9, 1993
 
623.   Optoelectronic Materials and Devices
University of Arizona
Tucson, AZ -- November 18, 1993
 
624.   Materials for Bloch Oscillations Devices
Army Research Office, Bloch Oscillations Workshop
Research Triangle Park, NC -- September 13, 1993
 
625.   GaN via MOCVD
Office of Naval Research, Electronic/Optical Materials Program review
Arlington, VA -- June 14, 1993
 
626.   Thermal Stability of GaN Thin Films Grown by MOCVD on 6H-SiC and Sapphire Substrates
U.S. Naval Research Laboratory, Tri-Service SIC Workshop
Washington, DC -- May 13, 1993
 
627.   Next Generation Semiconductor Materials for High Performance Optoelectronic Devices
Institute of Electrical and Electronic Engineers (IEEE), Motorola, Inc., IEEE Electron Devices Society Chapter Meeting
Schaumburg, IL -- May 5, 1993
 
628.   Optoelectronic Material
Consultate General of France, University of Michigan-Ann Arbor, National Science Foundation, and U.S. Air Force Office of Scientific Research, French and American Midwestern Symposium
Ann Arbor, MI -- April 28, 1993
 
629.   InGaAsP Diodes
U.S. Air Force Phillips Laboratory, Diode Laser Technology Program Conference
Albuquerque, NM -- April 20, 1993
 
630.   Semiconductor Materials and Their Applications
School of Electrical Engineering, Cornell University
Ithaca, NY -- March 30, 1993
 
631.   Current and Future Objectives of the Center for Quantum Devices
Department of Physics and Astronomy, Northwestern University
Evanston, IL -- February 10, 1993
 
632.   World Wide Conference in Advances Material Science and Nanotechnology

Dubai, UAE -- November 30, 1999
[Conference Link]
 

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