| 601. | Recent Advance fo Mid-Infrared Semiconductor Lasers
Semiconductor Science and Technology ‘98
La Jolla, CA -- September 7, 1998
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| 602. | Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 603. | Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 604. | Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 µm) Laser Diodes
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
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| 605. | Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon
Wide Bandgap Nitride Semiconductor Workshop
St. Louis, MO -- August 4, 1998
|
| 606. | Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
|
| 607. | 21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
|
| 608. | InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions
CLEO Conference, “Semiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
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| 609. | Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
|
| 610. | Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 611. | High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 612. | Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
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| 613. | Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 614. | Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 615. | Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 616. | Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
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| 617. | Multiple quantum well structures for multicolor infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 618. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 619. | Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 620. | 8.5 µm room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Integrated Optic Devices II
San Jose, CA -- January 24, 1998
|
| 621. | Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition
SPIE Photonics West '98, In-Plane Semiconductor Laser
San Jose, CA -- January 24, 1998
|
| 622. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 623. | New Developments in III-Nitride Material and Device Applications
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 624. | InP-based Multi-Spectral Quantum Well Infrared Photodetectors
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 625. | Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 626. | Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
|
| 627. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
|
| 628. | Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
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| 629. | III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
|
| 630. | High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 µm
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
|
| 631. | Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films
Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium
Chicago, IL -- May 12, 1997
|
| 632. | Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
|
| 633. | Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
|
| 634. | Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
|
| 635. | MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 636. | Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 637. | InAsSb/InAsSbP high-power laser diodes emitting 3-5 µm range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 638. | Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
|
| 639. | InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 640. | InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 641. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 642. | AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 643. | Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 644. | Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
|
| 645. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 646. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 647. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 648. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 649. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 650. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu