301. | Current status and potential of high power mid-infrared intersubband lasers SPIE International Photonics West Symposium San Francisco, CA -- January 25, 2010 |
302. | High performance quantum dot and quantum well infrared focala plane arrays SPIE International Photonics West Symposium San Francisco, CA -- January 24, 2010 |
303. | Watt level performance of photonic crystal distributed feedback quantum cascade laser SPIE International Photonics West Symposium San Francisco, CA -- January 23, 2010 |
304. | Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology DRS RSTA Inc. - Infrared Technologies Division Dallas, TX -- December 14, 2009 |
305. | Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up IEEE Boston Photonics Society MIT LIncoln Labs, Lexington, MA -- December 10, 2009 |
306. | Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology National Research Council Committee on the Developments in Detector Technoloiges, The National Academies Washington, DC -- December 8, 2009 |
307. | Recent advances in quantum cascade lasers at the Center for Quantum Devices International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications Turunc-Marmaris, Turkey -- November 3, 2009 |
308. | Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 7, 2009 |
309. | High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 6, 2009 |
310. | State of the art Type II superlattices in infrared detection and imaging IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 4, 2009 |
311. | State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging SPIE Optics and Photonics Symposium San Diego, CA -- August 4, 2009 |
312. | State of the art of Type II superlattices in infrared detection and imaging International Conference on Narrow Gap Semiconductors and Systems (NGS-2) Sendai, Japan -- July 13, 2009 |
313. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging International Symposium on Photoelectronic Detection and Imaging Beijing, China -- June 17, 2009 |
314. | Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices AFOSR Joint Electronics Program Review Arlington, VA -- May 27, 2009 |
315. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays SPIE International Symposium on Microtechnologies for the New Millennium Dresden, Germany -- May 6, 2009 |
316. | Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications SPIE International Symposium on Microtechnologies for the New Millennium Dresden, Germany -- May 5, 2009 |
317. | Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference Orlando, FL -- April 14, 2009 |
318. | High performance antimony base Type-II superlattice photodiodes on GaAs substrate SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference Orlando, FL -- April 14, 2009 |
319. | Modern Optoelectronics: Building Better Materials from the Atoms Up Invited Colloquium Speaker, Physics Department, Texas Tech University Lubbock, TX -- March 6, 2009 |
320. | III-Nitride avalanche photodiodes SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
321. | Mid-infrared quantum cascade lasers with high wall plug efficiency SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
322. | Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
323. | GaN-based nanostructured photodetectors SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
324. | The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
325. | Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |