Conferences by    
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551.   InAsSb/InAsSbP high-power laser diodes emitting 3-5 m range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
 
552.   Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
 
553.   InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
554.   InTlSb and InAsSb for 8-12 m near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
555.   Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
556.   AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
557.   Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
558.   Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
 
559.   High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 m Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
560.   GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 m Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
561.   Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
562.   High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
563.   Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
 
564.   Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
 
565.   Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
 
566.   Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
 
567.   III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
 
568.   GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
 
569.   Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
 
570.   Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 m Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
 
571.   MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
 
572.   Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
 
573.   MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
 
574.   Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
 
575.   The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
 
576.   Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
 
577.   Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 m Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 
578.   UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 
579.   GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 
580.   Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
 
581.   Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
 
582.   Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
 
583.   Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
 
584.   Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
 
585.   MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
 
586.   Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
587.   Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
588.   Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
 
589.   High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
 
590.   Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
 
591.   (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
 
592.   III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
 
593.   High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
 
594.   Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
 
595.   Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
 
596.   Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
 
597.   Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
 
598.   Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
 
599.   Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD
The Electrochemical Society Meeting on 2-20m Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 11, 1994
 
600.   Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 m Laser Diodes
IEEE 14th International Semiconductor Laser Conference
Maui, Hawaii -- September 19, 1994
 

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