501. | High Power Infrared Injection Laser Diodes (3-10 µm) Diode Laser Technology Review (DLTR) Ft. Walton Beach, FL -- May 11, 1999 |
502. | Highlights of High Power Infrared Injection Laser Diodes (3-10 µm) Naval Research Laboratory Washington, DC -- May 5, 1999 |
503. | High Power 3-5 µm InAsSb-based Lasers DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP) Arlington, VA -- May 3, 1999 |
504. | Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI) Naval Research Laboratory Washington, DC -- March 16, 1999 |
505. | Demonstration of Uncooled InAsSb Photodetectors for Military Sensors DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging Alexandria, VA -- March 16, 1999 |
506. | Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices Compound Semiconductor Outlook ‘99 Conference San Diego, CA -- March 1, 1999 |
507. | LEO of GaN on sapphire and Si substrates Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99) New Orleans, LA -- February 22, 1999 |
508. | UV, MSM and p-i-n detectors, UV blue laser diodes Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99) New Orleans, LA -- February 22, 1999 |
509. | Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
510. | Electrical Characterization of AlxGa1-xN for UV Photodetector Applications SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
511. | Multi-color 4-20 µm InP-based Quantum Well Infrared Detectors SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
512. | Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
513. | Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
514. | Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
515. | Internal Street Around Micropipes in 6H-SiC Substrates SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
516. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
517. | AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
518. | Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
519. | Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD SPIE Photonics West '99, Photodetectors: Materials and Devices IV San Jose, CA -- January 24, 1999 |
520. | Recent Advances in Semiconductor Infrared Lasers Chemistry Department, Texas A&M University College Station, TX -- December 10, 1998 |
521. | Development of high-performance III-Nitride-based semiconductor devices 9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98) Seoul, Korea -- November 6, 1998 |
522. | Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society Boston, MA -- November 5, 1998 |
523. | Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society Boston, MA -- November 5, 1998 |
524. | Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices International Conference on Solid State Crystals - Materials Science and Applications Zakopane, Poland -- October 12, 1998 |
525. | Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors International Symposium on Compound Semiconductors (ISCS) Nara, Japan -- October 12, 1998 |
526. | Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV Baltimore, MD -- October 4, 1998 |
527. | Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging Physics at the Turn of the 21st Century Conference St. Petersburg, Russia -- September 28, 1998 |
528. | Recent Advance fo Mid-Infrared Semiconductor Lasers Semiconductor Science and Technology ‘98 La Jolla, CA -- September 7, 1998 |
529. | Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD 4th International Conference on Electronic Materials (ICEM-98) Cheju Island, Korea -- August 24, 1998 |
530. | Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors 4th International Conference on Electronic Materials (ICEM-98) Cheju Island, Korea -- August 24, 1998 |
531. | Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 µm) Laser Diodes 4th International Conference on Electronic Materials (ICEM-98) Cheju Island, Korea -- August 24, 1998 |
532. | Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon Wide Bandgap Nitride Semiconductor Workshop St. Louis, MO -- August 4, 1998 |
533. | Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics 23rd International Summer College on Physics and Contemporary Needs Bhurban, Pakistan -- June 26, 1998 |
534. | 21st Century: The Final Frontier for III-Nitride Materials and Devices Future Trends in Microelectronics Ile des Embiez, France -- May 31, 1998 |
535. | InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions CLEO Conference, “Semiconductor Laser Workshop" San Francisco, CA -- May 8, 1998 |
536. | Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing Cornell University Ithaca, NY -- March 10, 1998 |
537. | Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy Diode Laser Technology Review (DLTR) Albuquerque, NM -- March 2, 1998 |
538. | High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers Diode Laser Technology Review (DLTR) Albuquerque, NM -- March 2, 1998 |
539. | Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers Diode Laser Technology Review (DLTR) Albuquerque, NM -- March 2, 1998 |
540. | Narrow gap semiconductor photodiodes SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
541. | Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
542. | Electrical transport properties of highly doped N-type GaN epilayers SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
543. | Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
544. | Multiple quantum well structures for multicolor infrared detectors SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
545. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
546. | Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications SPIE Photonics West '98, Photodetectors: Materials and Devices III San Jose, CA -- January 24, 1998 |
547. | 8.5 µm room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy SPIE Photonics West '98, Integrated Optic Devices II San Jose, CA -- January 24, 1998 |
548. | Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition SPIE Photonics West '98, In-Plane Semiconductor Laser San Jose, CA -- January 24, 1998 |
549. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials 9th International Workshop on Physics of Semiconductor Devices (IWPSD) New Delhi, India -- December 16, 1997 |
550. | New Developments in III-Nitride Material and Device Applications 9th International Workshop on Physics of Semiconductor Devices (IWPSD) New Delhi, India -- December 16, 1997 |