Conferences by    
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501.   High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
 
502.   MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
 
503.   LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
 
504.   Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
 
505.   High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
 
506.   High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 µm
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
507.   InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 µm grown by low pressure metal-organic chemical vapor deposition
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
508.   Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
509.   High Power Infrared Injection Laser Diodes (3-10 µm)
Diode Laser Technology Review (DLTR)
Ft. Walton Beach, FL -- May 11, 1999
 
510.   Highlights of High Power Infrared Injection Laser Diodes (3-10 µm)
Naval Research Laboratory
Washington, DC -- May 5, 1999
 
511.   High Power 3-5 µm InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
 
512.   Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
 
513.   Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
 
514.   Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices
Compound Semiconductor Outlook ‘99 Conference
San Diego, CA -- March 1, 1999
 
515.   LEO of GaN on sapphire and Si substrates
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
 
516.   UV, MSM and p-i-n detectors, UV blue laser diodes
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
 
517.   Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
518.   Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
519.   Multi-color 4-20 µm InP-based Quantum Well Infrared Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
520.   Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
521.   Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
522.   Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
523.   Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
524.   Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
525.   AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
526.   Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
527.   Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
528.   Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
 
529.   Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
 
530.   Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
531.   Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
532.   Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
 
533.   Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
 
534.   Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
 
535.   Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging
Physics at the Turn of the 21st Century Conference
St. Petersburg, Russia -- September 28, 1998
 
536.   Recent Advance fo Mid-Infrared Semiconductor Lasers
Semiconductor Science and Technology ‘98
La Jolla, CA -- September 7, 1998
 
537.   Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
538.   Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
539.   Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 µm) Laser Diodes
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
540.   Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon
Wide Bandgap Nitride Semiconductor Workshop
St. Louis, MO -- August 4, 1998
 
541.   Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
 
542.   21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
 
543.   InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions
CLEO Conference, “Semiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
 
544.   Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
 
545.   Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
546.   High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
547.   Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
548.   Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
549.   Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
550.   Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 

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