| 501. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
|
| 502. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 503. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 504. | DARPA Uncooled Integrated Imaging Sensors Workshop
Alexandria, VA -- May 14, 1996
|
| 505. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 506. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 507. | Diode Laser Technology Review, Air Force Phillips Laboratory
Albuquerque, NM -- April 14, 1996
|
| 508. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 509. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 510. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 511. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 512. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 513. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 514. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 515. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 516. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 517. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 518. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 519. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 520. | Symposium Organizer, 3rd International Symposium on Quantum Confinement: Quantum Wires and Dots, 188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 521. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 522. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 523. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 524. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 525. | High Power Diode Lasers
Symposium Organizer, 1995 Annual Meeting of the Optical Society of America
Portland, OR -- September 10, 1995
|
| 526. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 527. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 528. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 529. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 530. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
|
| 531. | Optoelectronic Integrated Circuit Materials, Physics, and Devices
Conference Chair, SPIE Photonics West '95
San Jose, CA -- February 4, 1995
|
| 532. | Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 533. | Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 534. | Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
|
| 535. | Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
|
| 536. | Co-chair of Session at 1st International Conference on Materials for Microelectronics
Barcelona, Spain -- October 17, 1994
|
| 537. | Session Chair, The Electrochemical Society Meeting on 2-20µm Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 12, 1994
|
| 538. | Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD
The Electrochemical Society Meeting on 2-20µm Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 11, 1994
|
| 539. | Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 µm Laser Diodes
IEEE 14th International Semiconductor Laser Conference
Maui, Hawaii -- September 19, 1994
|
| 540. | Defense Advanced Research Projects Agency/Office of Naval Research Project Review Meetings
Arlington, VA -- September 7, 1994
|
| 541. | M2S-HTSC (IV) Conference
Grenoble, France -- July 5, 1994
|
| 542. | Member Proposal Review Panel for the Quantum Electronics, Waves, and Beams Program, National Science Foundation
Arlington, VA -- June 22, 1994
|
| 543. | Novel Devices
Advanced Research Projects Agency/Microelectronics Technology Office (DARPA/MTO) Program Reviews
Alexandria, VA -- June 9, 1994
|
| 544. | International Advisory Board on Semiconductors, Polish Committee of Science
Warsaw, Poland -- May 11, 1994
|
| 545. | InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping
Conference on Lasers and Electro-Optics (CLEO '94)
Anaheim, CA -- May 8, 1994
|
| 546. | Diode Laser Technology Conference (DLTC)
Ft. Walton Beach, FL -- April 19, 1994
|
| 547. | Program Committee, Conference on Receivers, Transmitters, and WDMs for Fiber Optic Networks
Amsterdam, Netherlands -- March 20, 1994
|
| 548. | Nanophase Materials Conference, Engineering Foundation
Davos, Switzerland -- March 12, 1994
|
| 549. | Kopin Corporation Phase II Presentation, U.S. Space and Strategic Defense Command
Huntsville, AL -- March 11, 1994
|
| 550. | Physics and Applications of Advanced Semiconductor Technology and Future Trends
Physics Department, University of Western Ontario
London, Canada -- March 9, 1994
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