Conferences by    
Page 10 of 13:  Prev << 1 2 3 4 5 6 7 8 9 10  11 12 13  >> Next  (616 Items)

451.   Miniaturization: Enabling Technology for the New Millenium
Keynote Address, International Conference on Solid State Crystals - Materials Science and Application
Zakopane, Poland -- October 9, 2000
 
452.   Quantum Sensing
Office of Naval Research
Washington, DC -- September 15, 2000
 
453.   Past, Present and Future of Infrared Photodetectors
Air Force Office of Scientific Research
Arlington, VA -- September 14, 2000
 
454.   Advanced Lasers and Detector Integrated Systems (ALADINS)
DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting
Williamsburg, VA -- September 12, 2000
 
455.   Quantum Well Infrared Photodetectors (3-20 m) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance
SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI
San Diego, CA -- July 30, 2000
 
456.   Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
QWIP Workshop
Dana Point, CA -- July 27, 2000
 
457.   Recent Advances and Future Trends of High Power IR Laser Diodes
Tenth International Conference on Laser Optics
St. Petersburg, Russia -- June 26, 2000
 
458.   Material Development and Applications for UV Detectors
Nagoya Institute of Technology
Nagoya, Japan -- June 12, 2000
 
459.   Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 m Grown by Gas-MBE
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 5, 2000
 
460.   Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
Sapporo, Japan -- June 5, 2000
 
461.   UV Photodetectors
6th Annual Widegap III-Nitride Workshop 2000
Richmond, VA -- March 12, 2000
 
462.   Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors
Rockwell Science Center
Thousand Oaks, CA -- February 28, 2000
 
463.   LEO of III-Nitride on Al2O3and Si Substrates
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
464.   Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
465.   Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
466.   Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
467.   High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
468.   Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
469.   Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
470.   Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD 99)
New Delhi, India -- December 14, 1999
 
471.   New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD 99)
New Delhi, India -- December 14, 1999
 
472.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
473.   High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
474.   First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
475.   Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
476.   High Power 3-12 m Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
 
477.   Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA 99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
 
478.   GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
 
479.   Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD99)
Alanya, Turkey -- September 15, 1999
 
480.   High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD99)
Alanya, Turkey -- September 15, 1999
 
481.   MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
 
482.   LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
 
483.   Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
 
484.   High Power 3-12 m Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
 
485.   High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 m
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
486.   InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 m grown by low pressure metal-organic chemical vapor deposition
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
487.   Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
488.   High Power Infrared Injection Laser Diodes (3-10 m)
Diode Laser Technology Review (DLTR)
Ft. Walton Beach, FL -- May 11, 1999
 
489.   Highlights of High Power Infrared Injection Laser Diodes (3-10 m)
Naval Research Laboratory
Washington, DC -- May 5, 1999
 
490.   High Power 3-5 m InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
 
491.   Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
 
492.   Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
 
493.   Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices
Compound Semiconductor Outlook 99 Conference
San Diego, CA -- March 1, 1999
 
494.   LEO of GaN on sapphire and Si substrates
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99)
New Orleans, LA -- February 22, 1999
 
495.   UV, MSM and p-i-n detectors, UV blue laser diodes
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99)
New Orleans, LA -- February 22, 1999
 
496.   Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
497.   Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
498.   Multi-color 4-20 m InP-based Quantum Well Infrared Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
499.   Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
500.   Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 

Page 10 of 13:  Prev << 1 2 3 4 5 6 7 8 9 10  11 12 13  >> Next  (616 Items)