| 451. | Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 452. | High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 453. | Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 454. | Photodetectors: Materials and Devices III
Conference Co-Chair, SPIE Photonics West '98
San Jose, CA -- January 24, 1998
|
| 455. | Integrated Optic Devices II
Program Committee, SPIE Photonics West '98
San Jose, CA -- January 24, 1998
|
| 456. | Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 457. | Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 458. | Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 459. | Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 460. | Multiple quantum well structures for multicolor infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 461. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 462. | Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 463. | 8.5 µm room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Integrated Optic Devices II
San Jose, CA -- January 24, 1998
|
| 464. | Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition
SPIE Photonics West '98, In-Plane Semiconductor Laser
San Jose, CA -- January 24, 1998
|
| 465. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 466. | New Developments in III-Nitride Material and Device Applications
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 467. | InP-based Multi-Spectral Quantum Well Infrared Photodetectors
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 468. | Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 469. | Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
|
| 470. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
|
| 471. | Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
|
| 472. | III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
|
| 473. | High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 µm
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
|
| 474. | Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films
Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium
Chicago, IL -- May 12, 1997
|
| 475. | Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
|
| 476. | Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
|
| 477. | Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
|
| 478. | Photodetectors: Materials and Devices II
Conference Co-Chair, SPIE Photonics West '97
San Jose, CA -- February 8, 1997
|
| 479. | Integrated Optic Devices: Potential and Commercialization
Program Committee, SPIE Photonics West '97
San Jose, CA -- February 8, 1997
|
| 480. | Materials for Lasers and New Lasers Session
Session Chair, SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 481. | MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 482. | Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 483. | InAsSb/InAsSbP high-power laser diodes emitting 3-5 µm range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 484. | Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
|
| 485. | InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 486. | InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 487. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 488. | AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 489. | Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 490. | Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
|
| 491. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 492. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 493. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 494. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 495. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 496. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
|
| 497. | Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
|
| 498. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
|
| 499. | III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
|
| 500. | GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
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