Conferences by    
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451.   Gated Nano-pillars for Uncooled Tunable Infrared Detectors
Future Trends in Microelectronics (FTM): The Nano Millennium
Ile de Bendor, France -- June 25, 2001
 
452.   Type II Superlattices for VLWIR
Air Force Office of Scientific Research, Semiconductor Detector Program Review
Williamsburg, VA -- June 4, 2001
 
453.   AlxGa1-xN for Solar Blind Focal Plane Arrays
DARPA MTO IR/UV Imaging Technologies Review Meeting
Panama City, FL -- May 22, 2001
 
454.   Recent Advances in Mid-Infrared Semiconductor Laser Diodes
Solid State Diode Laser Review (SSDLTR) Conference
Albuquerque, NM -- May 21, 2001
 
455.   Quantization for High Performance Infrared Laser Diodes
1st Annual U.S.-Korea-Japan Workshop on Nanostructure Science/Technology (WNST)
Hanyang University, Seoul, Korea -- April 23, 2001
 
456.   Enabling Technologies for the 21st Century, Overview of CQD Research Activity
Review of Center for Optoelectronic Devices, Interconnects and Packaging (COEDIP)
University of Arizona, Tucson -- April 11, 2001
 
457.   Quantum Dots of GaN Based Materials for 280 nm Lasers
III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency
Arlington, VA -- April 9, 2001
 
458.   CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices
Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference
Montpellier, France -- April 1, 2001
 
459.   Infrared Quantum Well Laser Diodes: State of the Art and Future Trends
Advanced Research Workshop on Semiconductor Nanostructures
Queenstown, New Zealand -- February 5, 2001
 
460.   High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V
San Jose, CA -- January 22, 2001
 
461.   Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
462.   AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
463.   High Performance Type-II InAs/GaSb Superlattice Photodiodes
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
464.   Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
465.   Quantum Dot Infrared Photodetectors Compared with QWIPs
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
466.   Enabling Technology for the New Millenium: Toward Atomic Scale
Colloquium Seminar, Department of Physics, University of Illinois at Chicago
Chicago, IL -- January 17, 2001
 
467.   AlxGa1-xN for Solar Blind UV Detectors
International Specialist Meeting on Bulk Nitride Growth and Related Techniques
Parana, Brazil -- November 12, 2000
 
468.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000)
Cheju Island, Korea -- November 1, 2000
 
469.   Uncooled Integrated Sensors
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
470.   High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
471.   Advanced Lasers and Detector Integrated Systems
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
472.   Miniaturization: Enabling Technology for the New Millenium
Keynote Address, International Conference on Solid State Crystals - Materials Science and Application
Zakopane, Poland -- October 9, 2000
 
473.   Quantum Sensing
Office of Naval Research
Washington, DC -- September 15, 2000
 
474.   Past, Present and Future of Infrared Photodetectors
Air Force Office of Scientific Research
Arlington, VA -- September 14, 2000
 
475.   Advanced Lasers and Detector Integrated Systems (ALADINS)
DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting
Williamsburg, VA -- September 12, 2000
 
476.   Quantum Well Infrared Photodetectors (3-20 µm) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance
SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI
San Diego, CA -- July 30, 2000
 
477.   Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
QWIP Workshop
Dana Point, CA -- July 27, 2000
 
478.   Recent Advances and Future Trends of High Power IR Laser Diodes
Tenth International Conference on Laser Optics
St. Petersburg, Russia -- June 26, 2000
 
479.   Material Development and Applications for UV Detectors
Nagoya Institute of Technology
Nagoya, Japan -- June 12, 2000
 
480.   Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 µm Grown by Gas-MBE
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 5, 2000
 
481.   Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
Sapporo, Japan -- June 5, 2000
 
482.   UV Photodetectors
6th Annual Widegap III-Nitride Workshop 2000
Richmond, VA -- March 12, 2000
 
483.   Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors
Rockwell Science Center
Thousand Oaks, CA -- February 28, 2000
 
484.   LEO of III-Nitride on Al2O3and Si Substrates
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
485.   Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
486.   Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
487.   Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
488.   High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
489.   Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
490.   Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
491.   Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
 
492.   New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
 
493.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
494.   High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
495.   First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
496.   Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
497.   High Power 3-12 µm Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
 
498.   Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA ‘99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
 
499.   GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
 
500.   Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
 

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