Conferences by    
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451.   Quantum Dots of GaN Based Materials for 280 nm Lasers
III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency
Arlington, VA -- April 9, 2001
 
452.   CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices
Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference
Montpellier, France -- April 1, 2001
 
453.   Infrared Quantum Well Laser Diodes: State of the Art and Future Trends
Advanced Research Workshop on Semiconductor Nanostructures
Queenstown, New Zealand -- February 5, 2001
 
454.   High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V
San Jose, CA -- January 22, 2001
 
455.   Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
456.   AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
457.   High Performance Type-II InAs/GaSb Superlattice Photodiodes
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
458.   Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
459.   Quantum Dot Infrared Photodetectors Compared with QWIPs
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
 
460.   Enabling Technology for the New Millenium: Toward Atomic Scale
Colloquium Seminar, Department of Physics, University of Illinois at Chicago
Chicago, IL -- January 17, 2001
 
461.   AlxGa1-xN for Solar Blind UV Detectors
International Specialist Meeting on Bulk Nitride Growth and Related Techniques
Parana, Brazil -- November 12, 2000
 
462.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000)
Cheju Island, Korea -- November 1, 2000
 
463.   Uncooled Integrated Sensors
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
464.   High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
465.   Advanced Lasers and Detector Integrated Systems
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
 
466.   Miniaturization: Enabling Technology for the New Millenium
Keynote Address, International Conference on Solid State Crystals - Materials Science and Application
Zakopane, Poland -- October 9, 2000
 
467.   Quantum Sensing
Office of Naval Research
Washington, DC -- September 15, 2000
 
468.   Past, Present and Future of Infrared Photodetectors
Air Force Office of Scientific Research
Arlington, VA -- September 14, 2000
 
469.   Advanced Lasers and Detector Integrated Systems (ALADINS)
DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting
Williamsburg, VA -- September 12, 2000
 
470.   Quantum Well Infrared Photodetectors (3-20 µm) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance
SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI
San Diego, CA -- July 30, 2000
 
471.   Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
QWIP Workshop
Dana Point, CA -- July 27, 2000
 
472.   Recent Advances and Future Trends of High Power IR Laser Diodes
Tenth International Conference on Laser Optics
St. Petersburg, Russia -- June 26, 2000
 
473.   Material Development and Applications for UV Detectors
Nagoya Institute of Technology
Nagoya, Japan -- June 12, 2000
 
474.   Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 µm Grown by Gas-MBE
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 5, 2000
 
475.   Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
Sapporo, Japan -- June 5, 2000
 
476.   UV Photodetectors
6th Annual Widegap III-Nitride Workshop 2000
Richmond, VA -- March 12, 2000
 
477.   Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors
Rockwell Science Center
Thousand Oaks, CA -- February 28, 2000
 
478.   LEO of III-Nitride on Al2O3and Si Substrates
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
479.   Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
480.   Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
481.   Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
482.   High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
483.   Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
484.   Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
485.   Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
 
486.   New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
 
487.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
488.   High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
489.   First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
490.   Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
 
491.   High Power 3-12 µm Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
 
492.   Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA ‘99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
 
493.   GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
 
494.   Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
 
495.   High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
 
496.   MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
 
497.   LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
 
498.   Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
 
499.   High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
 
500.   High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 µm
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 

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