The Center for Quantum Devices in the News by    
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211.  
Some Like it Hot
Some Like it Hot
Chemistry and Industry - February 19, 1996
Big brother may soon have a new way of watching you, thanks to researchers at Northwestern University. They've used advanced film deposition techniques to make heat-sensitive detectors so sensitive that they can provide detailed images of the human body from several miles away. ... [read more]
 
212.  
Cameras That Go Infrared in the Night
Cameras That Go Infrared in the Night
New Scientist - February 17, 1996
Infrared detectors made from materials already used in lasers promise to provide the best infrared cameras and night-vision devices yet. These quantum well infrared photodetectors, or QWIPS are made from alternating layers of semiconductor materials, arranged atom by atom into layers just 10 molecules thick, says Manijeh Razeghi. ... [read more]
 
213.  
Growth of Ge-Dopes AlGaN
Growth of Ge-Dopes AlGaN
Compound Semiconductor - January 31, 1996
Photoluminescence data for Al[x]Ga[1-x]N samples with x < 0.2 displayed sharp band edge emission and a bread deep-level emission near 2.4 eV. Ge doping eliminated the deep level emission features observed in un-dopes AlGaN samples suggesting that this deep level emission may be related to Ga vacancies that could be filled by Ge donor impurities ... [read more]
 
214.  
Razeghi, Faber Reconized for Achievement
Razeghi, Faber Reconized for Achievement
Observer - November 6, 1995
Two faculty members at the Robert R. McCormick School of Engineering and Applied Science -- Manijeh Razeghi and Katherine Faber -- have been cited by the Society of Women Engineers for outstanding achievements. ... [read more]
 
215.  
Aluminum-Free Diode Lasers Last Longer
Aluminum-Free Diode Lasers Last Longer
Laser Focus World - November 1, 1995
Ongoing test suggest both rugged operation and long life for InGaAsP based aluminum-free diode lasers fabricated by researchers at Northwestern University. Elimination of aluminum removes an easily oxidized specie that spreads performance-degrading defects through the structure by forming light-absorbing dark lines. ... [read more]
 
216.  
Engineering Center and Korea Collaborate
Engineering Center and Korea Collaborate
Observer - October 2, 1995
The Center for Quantum Devices has been selected be the Korea Science and Engineering Foundation for a long-term collaboration to develop new lasers and semiconductor devices. The $1300,000 a year collaboration will enable research scientist and postdocs from the Joenbuk REsearch Center at Joenbuk National University to carry out joint research projects the Center for Quantum Devices of a five year period. ... [read more]
 
217.  
SWE Achievment Award Acceptance Adress: Dr. Razeghi
SWE Achievment Award Acceptance Adress: Dr. Razeghi
Society of Women Engineers - October 1, 1995
Good evening, ladies and gentlemen. It is a great pleasure and honor for me to have been selected at the 44th recipient of the Society of Women Engineers Achievement Award. ... [read more]
 
218.  
For Leadership and COntributions to Optoelectronic Devices and Education
For Leadership and COntributions to Optoelectronic Devices and Education
Society of Women Engineers - October 1, 1995
The Achievement Award is the highest award given annually by the Society of Women Engineers. It's presented annually to a woman who has made an outstanding contribution in a field of engineering, has academic training in either science or engineering, and meets the requirements for Senor Member in the Society. ... [read more]
 
219.  
Korean Center Inauguration
Korean Center Inauguration
McCormick Dimension - September 1, 1995
In ceremonies held July 28, Northwestern and Korea announced a five-year collaboration between KOSEF and the Center for Quantum Devices to develop new semiconductors and lasers. ... [read more]
 
220.  
InGaAsP Laser Diodes Outperform AlGaAs
InGaAsP Laser Diodes Outperform AlGaAs
Opto & Laser Europe - October 1, 1994
High-power semiconductor lasers based on InGaAsP alloys offer a superior alternative to conventional AlGaAs diodes. That's the view of Manijeh Razeghi at Northwestern Universtiy, who has fabricated devices with threshold current densities as low as 80 A/cm2, differential efficiencies as high as 1.2W/A, and projected lifetimes between 10^5 and 10^7 hours. ... [read more]
 

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