The Center for Quantum Devices in the News by    
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181.  
Building a Better High-Power Laser Diode
Building a Better High-Power Laser Diode
Optics and Photonics News - February 10, 1997
While Northwestern University's Center for Quantum Devices holds patents for MOCVD growth of Aluminum-Free laser diode, researchers at SLI and Coherent are investigating a new MBE fabrication technique that offer higher yields in production and better processing technology than other diodes. ... [read more]
 
182.  
Aluminum-Free Lasers Boost Power Potential
Aluminum-Free Lasers Boost Power Potential
R&D bulletin - January 1, 1997
Semiconductor Laser Int., will commercialize miniature semiconductor laser designed by researchers at Northwestern University's Center for Quantum Devices. ... [read more]
 
183.  
IR Imaging Arrays Turn to Quantum Wells
IR Imaging Arrays Turn to Quantum Wells
Phontonics Spectra - January 1, 1997
A new semiconductor-based IR detector technology for mid- and long-wavelength instruments is ready for the marketplace. The quantum-well infrared photodetector (QWIP) is based on absorption by confined carriers in multiple quantum wells. ... [read more]
 
184.  
Laser Startup Scores Al-feee Power Lasers
Laser Startup Scores Al-feee Power Lasers
III-V's Review - December 1, 1996
Semiconductor Laser International Corp. Endicott, NY, USA has been granted an exclusive license from Northwestern University's Center for Quantum Devices, to develop, manufacture, market, and sell aluminum free high power semiconductor lasers. ... [read more]
 
185.  
Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes
Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes
Photonics Spectra - December 1, 1996
Northwestern University has granted an exclusive license to Semiconductor Laser International Corp. (SLI) to develop, and sell aluminum-free high power laser worldwide for applications ranging from medicine to telecommunications to precision machining in the automotive industry. ... [read more]
 
186.  
 
New Alloy Semiconductors Detect IR
Sensor Technology - December 1, 1996
A group at Northwestern University developed new thallium based semiconductor alloys with great promise in the long wavelength 1 to 12 μm regions of the spectrum. The goal: high-performance, room-temperature infrared sensing. ... [read more]
 
187.  
Seeing a New Light; New Laser Boast Power, Reliability
Seeing a New Light; New Laser Boast Power, Reliability
Chicago Tribune - October 29, 1996
A high-power, low-energy miniature laser developed by Northwestern University researchers will be commercialized by Semiconductor Laser International Corp., the firm said Monday. ... [read more]
 
188.  
GaN Film Nears Perfection
GaN Film Nears Perfection
BMDO Update - September 1, 1996
Northwestern University's Center for Quantum Devices has grown some of the world's highest-quality III-Nitride films, with defect densities less than 10 million per centimeter squared. ... [read more]
 
189.  
MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
Laser Focus World - July 1, 1996
At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more]
 
190.  
Ultraviolet Detectors
Ultraviolet Detectors
Compound Semiconductor - May 1, 1996
Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more]
 

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