The Center for Quantum Devices in the News by    
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171.  
Researchers Demonstrate High-Power, Aluminum-free Mid-IR Laser
Researchers Demonstrate High-Power, Aluminum-free Mid-IR Laser
Photonics Spectra - October 1, 1997
Scientist at the Center for Quantum Devices have demonstrated and Al-free laser diode that emits up to 3 W at 3.2 μm. In comparison, similar Al-Free diode lasers have a maximum output of 100 mW, according to the center's director Dr. Manijeh Razeghi. ... [read more]
 
172.  
Northwestern Pushes Nitirde Research
Northwestern Pushes Nitirde Research
Electron Materials Technology News - September 1, 1997
Northwestern University's Center for Quantum Devices investigated ternary AlInN grown by MOCVD. They found the material to have a band-gap energy of 5.26 eV, (higher than previously reported) for a composition of Al0.92In0.08N ... [read more]
 
173.  
Single-Step QC Laser Emits at 8.5 μm
Single-Step QC Laser Emits at 8.5 μm
Photonics Spectra - August 1, 1997
In the latest development in quantum cascade laser (QCL) research a group of Northwestern University scientist reported an 8.5-μm emission from a QCL grown in a single step by gas-source MBE. ... [read more]
 
174.  
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
Laser Focus World - August 1, 1997
Scientist at Northwestern University have developed an antimonide-based laser bar that yields 3 W of peak power at 3.2 μm operating at 90 K. The device was tunable by injection current over a range of about 70 nm. ... [read more]
 
175.  
Semiconuctor Laser International
Semiconuctor Laser International
NASA Tech Briefs - July 10, 1997
Dr. Geoffrey T. Burnham, SLI's president and CEO announced that demand for laser build using Northwestern University's patented Al-Free technology was so great that work would begin on a second phase of its manufacturing facility that would double its size. ... [read more]
 
176.  
Aluminum-Free Diode Lasers
Aluminum-Free Diode Lasers
Lasers and Optronics - May 1, 1997
The Center for Quantum Devices at Northwestern University, has achieved operation at 60°C with 1 W of output power for a 100 μm-emitting aperture, over a device lifetime of 30,000 hours without any degradation in output power or change in wavelength, threshold current, or efficiency. ... [read more]
 
177.  
Pabricate Group III-Nitride Alloys on Saphire
Pabricate Group III-Nitride Alloys on Saphire
Microelectronics Technology Alert - April 21, 1997
The Norwestern group has already refined the deposition of epitaxial layers of III-Nitrides on sapphire substrates and extended the process. Using MOCVD, the alloys were fabricated on the sapphire substrates by varying the concentration of Al compounds to produce a variety of configurations of AlGaN ... [read more]
 
178.  
Race to Mid-IR Laser Emission Tightens
Race to Mid-IR Laser Emission Tightens
Electron Materials Technology News - March 10, 1997
In Illinois researchers at Northwestern University's Center for Quantum Device (CQD) are testing 3.6 μm laser emission from antimonide-based materials. ... [read more]
 
179.  
InSb QWIP Shows Promise
InSb QWIP Shows Promise
Electron Materials Technology News - March 10, 1997
Preliminary results at Northwestern University's Center for Quantum Devices (CQD) suggest a major breakthrough in carrier lifetimes has been achieved in infrared quantum well infrared photodetectors (QWIP) for logn wavelength focal plane arrays. ... [read more]
 
180.  
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Microelectronics Technology Alert - March 5, 1997
Northwester University has granted and exclusive license to SLI to manufacture and sell aluminum-free lasers. Applications are expected to cover telecommunications, medicine, the military, precision machining, and many other areas. ... [read more]
 

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