The Center for Quantum Devices in the News by    
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171.  
Northwestern Pushes Nitirde Research
Northwestern Pushes Nitirde Research
Electron Materials Technology News - September 1, 1997
Northwestern University's Center for Quantum Devices investigated ternary AlInN grown by MOCVD. They found the material to have a band-gap energy of 5.26 eV, (higher than previously reported) for a composition of Al0.92In0.08N ... [read more]
 
172.  
Single-Step QC Laser Emits at 8.5 μm
Single-Step QC Laser Emits at 8.5 μm
Photonics Spectra - August 1, 1997
In the latest development in quantum cascade laser (QCL) research a group of Northwestern University scientist reported an 8.5-μm emission from a QCL grown in a single step by gas-source MBE. ... [read more]
 
173.  
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
Laser Focus World - August 1, 1997
Scientist at Northwestern University have developed an antimonide-based laser bar that yields 3 W of peak power at 3.2 μm operating at 90 K. The device was tunable by injection current over a range of about 70 nm. ... [read more]
 
174.  
Semiconuctor Laser International
Semiconuctor Laser International
NASA Tech Briefs - July 10, 1997
Dr. Geoffrey T. Burnham, SLI's president and CEO announced that demand for laser build using Northwestern University's patented Al-Free technology was so great that work would begin on a second phase of its manufacturing facility that would double its size. ... [read more]
 
175.  
Aluminum-Free Diode Lasers
Aluminum-Free Diode Lasers
Lasers and Optronics - May 1, 1997
The Center for Quantum Devices at Northwestern University, has achieved operation at 60°C with 1 W of output power for a 100 μm-emitting aperture, over a device lifetime of 30,000 hours without any degradation in output power or change in wavelength, threshold current, or efficiency. ... [read more]
 
176.  
Pabricate Group III-Nitride Alloys on Saphire
Pabricate Group III-Nitride Alloys on Saphire
Microelectronics Technology Alert - April 21, 1997
The Norwestern group has already refined the deposition of epitaxial layers of III-Nitrides on sapphire substrates and extended the process. Using MOCVD, the alloys were fabricated on the sapphire substrates by varying the concentration of Al compounds to produce a variety of configurations of AlGaN ... [read more]
 
177.  
Race to Mid-IR Laser Emission Tightens
Race to Mid-IR Laser Emission Tightens
Electron Materials Technology News - March 10, 1997
In Illinois researchers at Northwestern University's Center for Quantum Device (CQD) are testing 3.6 μm laser emission from antimonide-based materials. ... [read more]
 
178.  
InSb QWIP Shows Promise
InSb QWIP Shows Promise
Electron Materials Technology News - March 10, 1997
Preliminary results at Northwestern University's Center for Quantum Devices (CQD) suggest a major breakthrough in carrier lifetimes has been achieved in infrared quantum well infrared photodetectors (QWIP) for logn wavelength focal plane arrays. ... [read more]
 
179.  
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Microelectronics Technology Alert - March 5, 1997
Northwester University has granted and exclusive license to SLI to manufacture and sell aluminum-free lasers. Applications are expected to cover telecommunications, medicine, the military, precision machining, and many other areas. ... [read more]
 
180.  
SLI Liscenses Annother Innovation
SLI Liscenses Annother Innovation
Electron Materials Technology News - March 1, 1997
SLI said the license of Al-Free technology from Northwestern University will allow the company to produce better beam quality and stable output from semiconductor laser diodes. Dr. Burnham expects the data storage industry to benefit. ... [read more]
 

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